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公开(公告)号：US20160336483A1
公开(公告)日：2016-11-17
申请号：US15225403
申请日：2016-08-01
Applicant: Sensor Electronic Technology, Inc.
Inventor： Maxim S. Shatalov , Alexander Dobrinsky , Rakesh Jain , Michael Shur
CPC classification number: H01L33/10 , H01L33/007 , H01L33/0079 , H01L33/12 , H01L33/32 , H01L33/46 , H01S5/0224
Abstract: A semiconductor layer including a plurality of inhomogeneous regions is provided. Each inhomogeneous region has one or more attributes that differ from a material forming the semiconductor layer. The inhomogeneous regions can include one or more regions configured based on radiation having a target wavelength. These regions can include transparent and/or reflective regions. The inhomogeneous regions also can include one or more regions having a higher conductivity than a conductivity of the radiation-based regions, e.g., at least ten percent higher. In one embodiment, the semiconductor layer is used to form an optoelectronic device.
Abstract translation: 提供包括多个不均匀区域的半导体层。 每个不均匀区域具有与形成半导体层的材料不同的一个或多个属性。 不均匀区域可以包括基于具有目标波长的辐射配置的一个或多个区域。 这些区域可以包括透明和/或反射区域。 不均匀区域还可以包括具有比基于辐射的区域的电导率更高的导电率的一个或多个区域，例如至少高10％。 在一个实施例中，半导体层用于形成光电器件。
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公开(公告)号：US20160247885A1
公开(公告)日：2016-08-25
申请号：US15144064
申请日：2016-05-02
Applicant: Sensor Electronic Technology, Inc.
Inventor： Maxim S. Shatalov , Jinwei Yang , Wenhong Sun , Rakesh Jain , Michael Shur , Remigijus Gaska
IPC: H01L29/201 , H01L21/308 , H01L29/78 , H01L29/15 , H01L29/66
CPC classification number: H01L21/308 , H01L21/0237 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02639 , H01L21/0265 , H01L29/158 , H01L29/2003 , H01L29/66075 , H01L33/007 , H01L33/12
Abstract: A semiconductor structure, such as a group III nitride-based semiconductor structure is provided. The semiconductor structure includes a cavity containing semiconductor layer. The cavity containing semiconductor layer can have a thickness greater than two monolayers and a multiple cavities. The cavities can have a characteristic size of at least one nanometer and a characteristic separation of at least five nanometers.
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公开(公告)号：US20160197228A1
公开(公告)日：2016-07-07
申请号：US15069178
申请日：2016-03-14
Applicant: Sensor Electronic Technology, Inc.
Inventor： Maxim S. Shatalov , Alexander Dobrinsky , Alexander Lunev , Rakesh Jain , Jinwei Yang , Michael Shur , Remigijus Gaska
CPC classification number: H01L33/0025 , H01L33/0075 , H01L33/10 , H01L33/32 , H01L33/46 , H01S5/0224
Abstract: A semiconductor layer including a plurality of inhomogeneous regions is provided. Each inhomogeneous region has one or more attributes that differ from a material forming the semiconductor layer. The inhomogeneous regions can include one or more regions configured based on radiation having a target wavelength. These regions can include transparent and/or reflective regions. The inhomogeneous regions also can include one or more regions having a higher conductivity than a conductivity of the radiation-based regions, e.g., at least ten percent higher.
Abstract translation: 提供包括多个不均匀区域的半导体层。 每个不均匀区域具有与形成半导体层的材料不同的一个或多个属性。 不均匀区域可以包括基于具有目标波长的辐射配置的一个或多个区域。 这些区域可以包括透明和/或反射区域。 不均匀区域还可以包括具有比基于辐射的区域的电导率更高的导电率的一个或多个区域，例如至少高10％。
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公开(公告)号：US09331244B2
公开(公告)日：2016-05-03
申请号：US14189012
申请日：2014-02-25
Applicant: Sensor Electronic Technology, Inc.
Inventor： Maxim S Shatalov , Alexander Dobrinsky , Alexander Lunev , Rakesh Jain , Jinwei Yang , Michael Shur , Remigijus Gaska
CPC classification number: H01L33/0025 , H01L33/0075 , H01L33/10 , H01L33/32 , H01L33/46 , H01S5/0224
Abstract: A semiconductor layer including a plurality of inhomogeneous regions is provided. Each inhomogeneous region has one or more attributes that differ from a material forming the semiconductor layer. The inhomogeneous regions can include one or more regions configured based on radiation having a target wavelength. These regions can include transparent and/or reflective regions. The inhomogeneous regions also can include one or more regions having a higher conductivity than a conductivity of the radiation-based regions, e.g., at least ten percent higher.
Abstract translation: 提供包括多个不均匀区域的半导体层。 每个不均匀区域具有与形成半导体层的材料不同的一个或多个属性。 不均匀区域可以包括基于具有目标波长的辐射配置的一个或多个区域。 这些区域可以包括透明和/或反射区域。 不均匀区域还可以包括具有比基于辐射的区域的电导率更高的导电率的一个或多个区域，例如至少高10％。
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公开(公告)号：US20160118536A1
公开(公告)日：2016-04-28
申请号：US14984156
申请日：2015-12-30
Applicant: Sensor Electronic Technology, Inc.
Inventor： Maxim S. Shatalov , Alexander Dobrinsky , Alexander Lunev , Rakesh Jain , Jinwei Yang , Michael Shur , Remigijus Gaska
CPC classification number: H01L33/10 , H01L33/007 , H01L33/12 , H01L33/32 , H01L33/46
Abstract: A semiconductor layer including a plurality of inhomogeneous regions is provided. Each inhomogeneous region has one or more attributes that differ from a material forming the semiconductor layer. The inhomogeneous regions can include one or more regions configured based on radiation having a target wavelength. These regions can include transparent and/or reflective regions. The inhomogeneous regions also can include one or more regions having a higher conductivity than a conductivity of the radiation-based regions, e.g., at least ten percent higher. In one embodiment, the semiconductor layer is used to form an optoelectronic device.
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Patent Agency Ranking
公开(公告)号：US09281441B2
公开(公告)日：2016-03-08
申请号：US14285738
申请日：2014-05-23
Applicant: Sensor Electronic Technology, Inc.
Inventor： Michael Shur , Rakesh Jain , Maxim S. Shatalov , Alexander Dobrinsky , Jinwei Yang , Remigijus Gaska
CPC classification number: H01L33/06 , H01L33/18 , H01L33/30 , H01L2224/14 , H01S5/3209 , H01S5/3413 , H01S5/34333
Abstract: A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.
Abstract translation: 提供了包括包含多个组成不均匀区域的半导体层的器件。 多个组成不均匀区域的平均带隙与半导体层的剩余部分的平均带隙之间的差可以是至少热能。 此外，多个组成不均匀区域的特征尺寸可以小于半导体层的位错密度的倒数。
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公开(公告)号：US20140326950A1
公开(公告)日：2014-11-06
申请号：US14266900
申请日：2014-05-01
Applicant: Sensor Electronic Technology, Inc.
Inventor： Maxim S. Shatalov , Jinwei Yang , Wenhong Sun , Rakesh Jain , Michael Shur , Remigijus Gaska
IPC: H01L29/06
CPC classification number: H01L29/158 , H01L21/0237 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/02513 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L29/0657 , H01L29/2003 , H01L29/205 , H01L33/007 , H01L33/12
Abstract: A semiconductor structure, such as a group III nitride-based semiconductor structure is provided. The semiconductor structure includes a cavity containing semiconductor layer. The cavity containing semiconductor layer can have a thickness greater than two monolayers and a multiple cavities. The cavities can have a characteristic size of at least one nanometer and a characteristic separation of at least five nanometers.
Abstract translation: 提供了诸如III族氮化物基半导体结构的半导体结构。 半导体结构包括含有半导体层的空腔。 含腔的半导体层可以具有大于两个单层和多个空腔的厚度。 空腔可以具有至少一纳米的特征尺寸和至少五纳米的特征分离。
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公开(公告)号：US20250169227A1
公开(公告)日：2025-05-22
申请号：US19028112
申请日：2025-01-17
Applicant: Sensor Electronic Technology, Inc.
Inventor： Rakesh Jain , Maxim S. Shatalov , Alexander Dobrinsky , Michael Shur
IPC: H10H20/811 , H10F30/222 , H10F30/223 , H10F77/124 , H10F77/14 , H10F77/20 , H10H20/01 , H10H20/81 , H10H20/812 , H10H20/816 , H10H20/824 , H10H20/825
Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The heterostructure can include a p-type interlayer located between the electron blocking layer and the p-type contact layer. In an embodiment, the electron blocking layer can have a region of graded transition. The p-type interlayer can also include a region of graded transition.
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公开(公告)号：US12300758B2
公开(公告)日：2025-05-13
申请号：US17667577
申请日：2022-02-09
Applicant: Sensor Electronic Technology, Inc.
Inventor： Rakesh Jain , Maxim S. Shatalov , Alexander Dobrinsky , Michael Shur
IPC: H01L33/00 , H01L31/0224 , H01L31/0304 , H01L31/0352 , H01L31/105 , H01L31/109 , H01L33/02 , H01L33/04 , H01L33/06 , H01L33/14 , H01L33/32
Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The heterostructure can include a p-type interlayer located between the electron blocking layer and the p-type contact layer. In an embodiment, the electron blocking layer can have a region of graded transition. The p-type interlayer can also include a region of graded transition.
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公开(公告)号：US11611011B2
公开(公告)日：2023-03-21
申请号：US17061091
申请日：2020-10-01
Applicant: Sensor Electronic Technology, Inc.
Inventor： Rakesh Jain , Maxim S. Shatalov , Alexander Dobrinsky , Michael Shur
IPC: H01L33/00 , H01L33/32 , H01L31/0352 , H01L33/14 , H01L31/105 , H01L31/0224 , H01L31/0304 , H01L33/02 , H01L31/109 , H01L33/04 , H01L33/06
Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The heterostructure can include a p-type interlayer located between the electron blocking layer and the p-type contact layer. In an embodiment, the electron blocking layer can have a region of graded transition. The p-type interlayer can also include a region of graded transition.
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