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    Electronic Gadget Disinfection
    71.
    发明申请
    Electronic Gadget Disinfection 有权
    电子小工具消毒

    公开(公告)号：US20140183377A1

    公开(公告)日：2014-07-03

    申请号：US14144053

    申请日：2013-12-30

    Applicant: Sensor Electronic Technology, Inc.

    Inventor： Timothy James Bettles ,  Yuri Bilenko ,  Saulius Smetona ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

    IPC: A61L2/10

    CPC classification number: A61L2/10 ,  A61L2/00 ,  A61L2/24

    Abstract: A solution for disinfecting electronic devices is provided. An ultraviolet radiation source is embedded within an ultraviolet absorbent case. While the electronic device is within the ultraviolet absorbent case, ultraviolent radiation is directed at the electronic device. A monitoring and control system monitors a plurality of attributes for the electronic device, which can include: a frequency of usage for the device, a biological activity at a surface of the device, and a disinfection schedule history for the device. Furthermore, the monitoring and control system can detect whether the device is being used. Based on the monitoring, the monitoring and control system controls the ultraviolet radiation directed at the electronic device.

    Abstract translation: 提供了一种消毒电子设备的解决方案。 紫外线辐射源嵌入紫外线吸收剂盒内。 当电子设备在紫外线吸收剂盒内时，超低辐射被引导到电子设备。 监视和控制系统监视电子设备的多个属性，其可以包括：设备的使用频率，设备表面的生物活动以及设备的消毒调度历史。 此外，监控系统可以检测设备是否被使用。 基于监控，监控系统控制指向电子设备的紫外线辐射。

    Multi-Wafer Reactor
    72.
    发明申请
    Multi-Wafer Reactor 有权
    多晶硅反应堆

    公开(公告)号：US20140113389A1

    公开(公告)日：2014-04-24

    申请号：US14060173

    申请日：2013-10-22

    Applicant: Sensor Electronic Technology, Inc.

    Inventor： Igor Agafonov ,  Jinwei Yang ,  Michael Shur ,  Remigijus Gaska

    IPC: H01L21/02 ,  H01L21/66

    CPC classification number: H01L21/0262 ,  C23C16/455 ,  C23C16/4584 ,  C23C16/52 ,  H01L22/12 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A solution for manufacturing semiconductors is provided. An embodiment provides a chemical vapor deposition reactor, which includes a chemical vapor deposition chamber. A substrate holder located in the chemical vapor deposition chamber can be rotated about its own axis at a first angular speed, and a gas injection component located in the chemical vapor deposition chamber can be rotated about an axis of the gas injection component at a second angular speed. The angular speeds are independently selectable and can be configured to cause each point on a surface of a substrate wafer to travel in an epicyclical trajectory within a gas flow injected by the gas injection component. An angle between the substrate holder axis and the gas injection component axis and/or a distance between the substrate holder axis and the gas injection component axis can be controlled variables.

    Abstract translation: 提供制造半导体的解决方案。 实施例提供了一种化学气相沉积反应器，其包括化学气相沉积室。 位于化学气相沉积室中的衬底保持器可以以其第一角速度围绕其自身的轴线旋转，并且位于化学气相沉积室中的气体注入组件可以围绕气体注入部件的轴线以第二角度 速度。 角速度是可独立选择的，并且可以被配置成使得衬底晶片的表面上的每个点在由气体注入部件注入的气流中的行星轨迹中行进。 衬底保持器轴线和气体注入部件轴线之间的角度和/或衬底保持器轴线和气体注入部件轴线之间的距离可以是受控变量。

    Light Emitting Diodes for Simulation of Missile Signatures
    73.
    发明申请
    Light Emitting Diodes for Simulation of Missile Signatures 有权
    用于模拟导弹签名的发光二极管

    公开(公告)号：US20140096669A1

    公开(公告)日：2014-04-10

    申请号：US13625363

    申请日：2012-09-24

    Applicant: Sensor Electronic Technology, Inc.

    Inventor： Remigijus Gaska ,  Alexander Dobrinsky ,  Maxim Shatalov ,  Michael Shur

    IPC: F41J2/00 ,  F41J9/08

    CPC classification number: F41J2/02 ,  F41G7/002 ,  F41H11/02 ,  F41J2/00 ,  F41J9/00 ,  F41J9/08

    Abstract: An emitting structure for simulating an irradiance signature of a missile is provided. The emitting structure includes one or more radiation sources, each of which includes at least one ultraviolet radiation source and at least one infrared radiation source. The emitting structure also includes a spherical shell and a mechanism for positioning the radiation source(s) along a three dimensional boundary of the spherical shell. The emitting structure can locate and operate one of the radiation sources to simulate the irradiance signature of the missile.

    Abstract translation: 提供了用于模拟导弹的辐照度特征的发射结构。 发射结构包括一个或多个辐射源，每个辐射源包括至少一个紫外辐射源和至少一个红外辐射源。 发射结构还包括球壳和用于沿着球壳的三维边界定位辐射源的机构。 发射结构可以定位和操作其中一个辐射源，以模拟导弹的辐照度特征。

    Epitaxy Technique for Reducing Threading Dislocations in Stressed Semiconductor Compounds
    76.
    发明申请
    Epitaxy Technique for Reducing Threading Dislocations in Stressed Semiconductor Compounds 审中-公开
    降低半导体化合物中螺旋位错的外延技术

    公开(公告)号：US20130193480A1

    公开(公告)日：2013-08-01

    申请号：US13756806

    申请日：2013-02-01

    Applicant: Sensor Electronic Technology, Inc.

    Inventor： Wenhong Sun ,  Rakesh Jain ,  Jinwei Yang ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Remigijus Gaska ,  Michael Shur

    IPC: H01L21/02 ,  H01L29/06

    CPC classification number: H01L21/02587 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/0684 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/16

    Abstract: A solution for fabricating a semiconductor structure is provided. The semiconductor structure includes a plurality of semiconductor layers grown over a substrate using a set of epitaxial growth periods. During each epitaxial growth period, a first semiconductor layer having one of: a tensile stress or a compressive stress is grown followed by growth of a second semiconductor layer having the other of: the tensile stress or the compressive stress directly on the first semiconductor layer. One or more of a set of growth conditions, a thickness of one or both of the layers, and/or a lattice mismatch between the layers can be configured to create a target level of compressive and/or shear stress within a minimum percentage of the interface between the layers.

    Abstract translation: 提供了一种用于制造半导体结构的解决方案。 半导体结构包括使用一组外延生长周期在衬底上生长的多个半导体层。 在每个外延生长周期期间，生长具有拉伸应力或压缩应力之一的第一半导体层，然后直接在第一半导体层上生长具有另一个的拉伸应力或压缩应力的第二半导体层。 一组生长条件中的一个或多个层中的一个或两个的厚度和/或层之间的晶格失配可以被配置为在最小百分比的范围内产生压缩和/或剪切应力的目标水平 层之间的界面。

    Ultraviolet Reflective Contact
    77.
    发明申请
    Ultraviolet Reflective Contact 有权
    紫外反射接触

    公开(公告)号：US20130146907A1

    公开(公告)日：2013-06-13

    申请号：US13711675

    申请日：2012-12-12

    Applicant: Sensor Electronic Technology, Inc.

    Inventor： Alexander Lunev ,  Alexander Dobrinsky ,  Maxim S. Shatalov ,  Remigijus Gaska ,  Michael Shur

    IPC: H01L33/32 ,  H01L29/20 ,  H01L29/45

    CPC classification number: H01L33/32 ,  H01L29/2003 ,  H01L29/45 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42

    Abstract: A contact including an ohmic layer and a reflective layer located on the ohmic layer is provided. The ohmic layer is transparent to radiation having a target wavelength, while the reflective layer is at least approximately eighty percent reflective of radiation having the target wavelength. The target wavelength can be ultraviolet light, e.g., having a wavelength within a range of wavelengths between approximately 260 and approximately 360 nanometers.

    Abstract translation: 提供了包括欧姆层和位于欧姆层上的反射层的触点。 欧姆层对具有目标波长的辐射是透明的，而反射层对于具有目标波长的辐射具有至少约百分之八十。 目标波长可以是紫外光，例如波长在约260和约360纳米之间的波长范围内。

    High-Voltage Normally-Off Field Effect Transistor
    78.
    发明申请
    High-Voltage Normally-Off Field Effect Transistor 有权
    高电压常关场效应晶体管

    公开(公告)号：US20130069114A1

    公开(公告)日：2013-03-21

    申请号：US13622379

    申请日：2012-09-19

    Applicant: Sensor Electronic Technology, Inc.

    Inventor： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

    IPC: H01L29/78 ,  H01L21/336

    CPC classification number: H01L29/4175 ,  H01L29/2003 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/7787

    Abstract: A device having a channel with multiple voltage thresholds is provided. The channel can include a first section located adjacent to a source electrode, which is a normally-off channel and a second section located between the first section and a drain electrode, which is a normally-on channel. The device can include a charge-controlling electrode connected to the source electrode, which extends from the source electrode over at least a portion of the second section of the channel. During operation of the device, a potential difference between the charge-controlling electrode and the channel can control the on/off state of the normally-on section of the channel.

    Abstract translation: 提供具有多个电压阈值的通道的装置。 通道可以包括位于与作为常开通道的源电极相邻的第一部分和位于第一部分和作为常开通道的漏电极之间的第二部分。 该装置可以包括连接到源电极的电荷控制电极，其从源电极延伸到通道的第二部分的至少一部分上。 在器件工作期间，充电控制电极和通道之间的电位差可以控制通道的常开部分的开/关状态。

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