公开(公告)号：JPS5857747A

公开(公告)日：1983-04-06

申请号：JP15715281

申请日：1981-09-30

Applicant: SHARP KK

Inventor： YOSHIKAWA TOSHIBUMI ,  NAKAKURA YUKINORI

IPC: H01L31/12 ,  H01L29/74 ,  H01L31/111

Abstract: PURPOSE:To improve a critical OFF voltage increase rate of a vertical type photo silicon controlled rectifier (SCR) by making large hFE of pnp element and photo sensitivity by thermal treatment, while making small a gate resistance and by integrating elements in the same chip. CONSTITUTION:Response of pnp element of photo SCR delays when hFE is made large, while gate resistance RG and gate voltage VG are in the relation VG CRGXdv/dt, and when RG is made small, a critical off voltage increase rate becomes large. Meanwhile, a displacement current by dv/dt is a transient phenomenon and therefore (dv/dt)M can be improved fantastically by making large hFE and small RG by a mutual reinforcing effect by these two effects. When hFE is increased by making longer the life time of base layer, a photo sensitivity is generally enhanced, while the minimum trigger current reduces a little and the (dv/dt)M is as much improved. Such photo sensitivity is improved by about 30% through annealing under the N2 atmosphere at 900 deg.C. When the RG 9 (P layer) is provided in the substrate 1 and the one end is connected to the gate 4, while the other end to the cathode 8 through the electrode 10, the (dv/dt)M can be improved by 2-3 times as compared with that when a resistor is provided externally.

公开(公告)号：JPS5812744B2

公开(公告)日：1983-03-10

申请号：JP4091078

申请日：1978-04-06

Applicant: SHARP KK

Inventor： YOSHIKAWA TOSHIBUMI ,  EBINA KYOSHI

IPC: H01L27/14 ,  H01L31/10

公开(公告)号：JPS55150280A

公开(公告)日：1980-11-22

申请号：JP5841779

申请日：1979-05-11

Applicant: SHARP KK

Inventor： YOSHIKAWA TOSHIBUMI ,  TANI YOSHIHEI

IPC: H01L31/10 ,  G01J3/10 ,  H01L31/02 ,  H01L31/14

Abstract: PURPOSE:To correct the color of an object to be measured upon detection of the color by controlling the light output therefrom by employing the reflected light on a reflector by the same semiconductor device. CONSTITUTION:A semiconductor device PDo adsorbs short wavelength component on shallow pn-junction 3 to produce a photocurrent and long wavelength component on deep junction 2 to produce a photocurrent. The portion reaching the junction 2 to the surface of the substrate is coated with opaque film to improve the sensitivity ratio. The light irradiated from a light source O is reflected on a reflector Q having predetermined reflectivity with respect to an object P to be measured and incident to the device PDo. In this case the light is incident from the reflector Q in predetermined period, while the device PDo incident with the light from the object P in other period calculates the sensitivity ratio A of the photocurrent of the respective diodes, and applies the light source output control circuit C through converter B with the light to compare it with color temperature information of the light source preset to control the power supply condition to become desired color temperature. With such a configuration it can obtain highly accurate measured value.

公开(公告)号：JPS5543744A

公开(公告)日：1980-03-27

申请号：JP11621178

申请日：1978-09-20

Applicant: SHARP KK

Inventor： TANI YOSHIHEI ,  YOSHIKAWA TOSHIBUMI ,  ASOU AKIRA ,  KAHANABE HITOSHI

IPC: H05B37/02 ,  H01L31/00 ,  H01L31/04 ,  H01L31/10

公开(公告)号：JPS5519833A

公开(公告)日：1980-02-12

申请号：JP9239078

申请日：1978-07-27

Applicant: SHARP KK

Inventor： YOSHIKAWA TOSHIBUMI ,  TANI YOSHIHEI ,  ASOU AKIRA ,  KAHANABE HITOSHI

IPC: H01L31/10

Abstract: PURPOSE:To improve spectrum sensitivity characteristics of a required wave region without using a filter, that is, to substantially reduce short-wave spectrum sensitivity characteristics, sensitivity of visible light in particular. CONSTITUTION:When a P layer 3 and an N connecting layer are prepared in an island formed by separating 4 an N epi-layer 2 on a P-type silicon base plate 1 by a P layer, photodiodes PD1, PD2 by joining 5 of the base plate 1 and the layer 2 and also joining 6 of the layer 2 and the layer 3. The deep layer element PD1 has its sensitivity on long-wave side and the shallow element PD2 has its sensitivity on short-wave side. By covering surface with a light-permeating insulation film and providing it with holes, electrodes 8 through 10 are prepared. The electrodes 9 and 10 are shortcircuited by an aluminum film 11 to prevent photo-energy from being radiated into the joint 5 near the surface and allow short-wave to be absorbed by the joint 6 to the maximum possible extent. In this mechanism, as the element PD2 in the shallow position is shortcircuited, the shortwave element is consumed as shortcircuit current, and it is not to become the sensitivity of the element PD1 in the deep position, the spectrum sensitivity characteristics are to come to show that sensitivity on the shortwave side is extremely reduced.

公开(公告)号：JPS5516494A

公开(公告)日：1980-02-05

申请号：JP9066778

申请日：1978-07-24

Applicant: SHARP KK

Inventor： YOSHIKAWA TOSHIBUMI ,  TANI YOSHIHEI ,  ASOU AKIRA ,  KAHANABE HITOSHI

IPC: G01J1/02 ,  H01L31/10

Abstract: PURPOSE:To obtain an optical semiconductor device keeping a correlation between the conducted output and the wavelength of a radiating light linear extensively through a structure of PN injections of more than one which are formed to have the depth differentiated in the thickness direction of a semiconductor layer. CONSTITUTION:The first PN junction 5 is formed between a semi-conductor substrate 1 and an N type epitaxial area 2 and at the same time, the second PN junction 6 is also formed between N type epitaxial area 2 and P type area 4. A long wevelength component out of the optical energy radiated through forming the first PN junction 5 at a relatively deep position of the semiconductor layer is absorbed to bring forth an electron/positive hole couple, and further a short wavelength component out of the optical energy radiated through forming the second PN junction 6 in an area near the surface of the semiconductor layer is absorbed to bring forth an electron/positive hole couple.

公开(公告)号：JPS54132183A

公开(公告)日：1979-10-13

申请号：JP4091078

申请日：1978-04-06

Applicant: SHARP KK

Inventor： YOSHIKAWA TOSHIBUMI ,  EBINA KIYOSHI

IPC: H01L27/14 ,  H01L31/10

Abstract: PURPOSE:To enhance the operation characteristics of the device by setting the depth of the buried layer where the conversion element is to be provided larger than the depth of the buried layer where the IC element is to be provided when both the IC element and the photoelectric conversion element are provided on each buried layer within the same chip. CONSTITUTION:N-type buried layer 11 and 12 are formed by diffusion on the surface of P-type Si substrate 10 in opposition to the IC element and the photoelectric conversion element to be provided later. In this case, the depth of layer 11 corresponding to the IC element such as the diode, transistor, etc. is set to several mum - several tens of mum; while the depth of layer 12 corresponding to the photoelectric conversion element such as the photo diode, photo transistor, etc. is set to about 50mum (deeper than layer 12). After this, N-type layer 13 is epitaxial-grown on the entire surface to form P -type isolation region 14 by diffusion. Then N-type impurity is diffused within island region 15 on layer 11 enclosed by region 14 with the diode, transistor, etc. provided. At the same time, P- or N-type impurity is diffused to island 15' on layer 12 to form the photo diode or photo transistor. Thus, the illumination light can be utilized effectively.

公开(公告)号：JPS5449087A

公开(公告)日：1979-04-18

申请号：JP11621077

申请日：1977-09-26

Applicant: SHARP KK

Inventor： YOSHIKAWA TOSHIBUMI ,  KAHANABE HITOSHI

IPC: H01L31/10

Abstract: PURPOSE:To manufacture a device with infrared sensitivity improved by making a collector layer thick while keeping small the saturation voltage of a transistor by using impurities large in diffusion coefficient. CONSTITUTION:To the selected area of N- layer 5, N-type impurities large in diffusion coefficient are diffused to form N layer 7 against N layer 6. On layer 5, N- layer 8 is epitaxy-formed, and P-type base 9 and N -type emitter 10 are formed. The diffusion of layers 9 and 10 is made from layers 7 to 8, and the collector series resistance is small because of layer 7. In this way, base layer 9 is made thin and thickness of low-conductive layers 5 and 8 of the collector part is made large, so that the infrared side can also be given photo sensitivity.