公开(公告)号：JPH0544178B2

公开(公告)日：1993-07-05

申请号：JP3135382

申请日：1982-02-26

Applicant: SONY CORP

Inventor： IKEDA MASAO ,  MORI YOSHIFUMI

IPC: C23C16/458 ,  H01L21/205

公开(公告)号：JPS6174385A

公开(公告)日：1986-04-16

申请号：JP19731884

申请日：1984-09-20

Applicant: Sony Corp

Inventor： IKEDA MASAO ,  MORI YOSHIFUMI

IPC: H01L21/203 ,  H01S5/00

Abstract: PURPOSE: To enlarge the energy band for the realization of a laser device capable of stabilized shortwave emission by a method wherein a lattice constant transition layer incorporating super lattice is provided on a GaAs substrate allowing the quantity to be reduced of Al to be added to an activation layer and clad layer.
CONSTITUTION: On a GaAs substrate 11 of a first conductivity type, a lattice constant transition layer 12 composed of super lattice is formed, which is followed by the formation of a clad layer 13, similar to the substrate 1 in the type of conductivity, activation layer 14, and a second clad layer 15 are epitaxially formed. The activation layer 14, and the clad layers 13, 15 are constituted of (Al
x Ga
1-x )
y In
1-y P, where the quantity (x) should be chosen to satisfy 0≤x1. The quantity (x) in the first and second clad layers 13, 15 should be larger than that in the activation layer 14. This allows the addition to be reduced of Al to an activation layer 3, increasing the energy band and realizing shortwave emission in the vicinity of 580nm. Furthermore, addition may be reduce of Al to the first and second clad layers 13, 15, which contributes to the enhancement of electrical and optical stability.
COPYRIGHT: (C)1986,JPO&Japio

Abstract translation: 目的：为了实现能够实现稳定的短波发射的激光装置的能带，通过在砷化镓衬底上提供掺入超晶格的晶格常数过渡层，使Al的量减少到 活化层和包层。 构成：在第一导电类型的GaAs衬底11上，形成由超晶格构成的晶格常数过渡层12，随后形成包覆层13，类似于导电类型的衬底1的激活 层14和第二覆层15外延形成。 激活层14和包覆层13,15由（Al x Ga 1-x）y In 1-y P构成，其中应选择量（x）以满足0 <= x1。 第一和第二包覆层13,15中的量（x）应当大于活化层14中的量（x）。这允许将Al减少到活化层3，增加能带并实现短波发射 580nm附近。 此外，添加可以减少Al到第一和第二覆盖层13,15，这有助于增强电和光学稳定性。

公开(公告)号：JP2013175790A

公开(公告)日：2013-09-05

申请号：JP2013119695

申请日：2013-06-06

Applicant: Sony Corp ,  ソニー株式会社

Inventor： GOTO OSAMU ,  ASANO TAKEHARU ,  TAKEYA MOTONOBU ,  SUZUKI YASUHIKO ,  SHIBUYA KATSUYOSHI ,  MIZUNO TAKASHI ,  TOJO TAKESHI ,  UCHIDA SHIRO ,  IKEDA MASAO

IPC: H01S5/343 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor light-emitting element which uses a nitride-based III-V compound semiconductor and which can achieve good crystallinity of an optical waveguide layer thereby to achieve a long service life.SOLUTION: In manufacturing of a semiconductor laser by sequentially growing an n-type AlGaN clad layer 5, an n-type GaN optical waveguide layer 6, an active layer 7, an undoped GaN optical waveguide layer 17, a p-type AlGaN cap layer 9, a p-type GaN optical waveguide layer 10, a p-type AlGaN/GaN superlattice clad layer 18 and a p-type GaN contact layer, the n-type GaN optical waveguide layer 6, the active layer 7, the undoped GaN optical waveguide layer 17, and the p-type AlGaN cap layer 9 are grown in an Natmosphere, and the p-type GaN optical waveguide layer 10, the p-type AlGaN/GaN superlattice clad layer 18 and the p-type GaN contact layer are grown in a mixed gas atmosphere of Nand H.

Abstract translation: 要解决的问题：提供一种使用氮化物III-V族化合物半导体的半导体发光元件的制造方法，其能够实现光波导层的良好的结晶性，从而达到较长的使用寿命。 通过依次生长n型AlGaN包覆层5，n型GaN光波导层6，有源层7，未掺杂的GaN光波导层17，p型AlGaN覆盖层9， p型GaN光波导层10，p型AlGaN / GaN超晶格覆盖层18和p型GaN接触层，n型GaN光波导层6，有源层7，未掺杂的GaN光波导层 17，并且p型AlGaN覆盖层9在大气中生长，并且p型GaN光波导层10，p型AlGaN / GaN超晶格覆盖层18和p型GaN接触层生长在 Nand H的混合气体气氛

公开(公告)号：JP2010251712A

公开(公告)日：2010-11-04

申请号：JP2010031299

申请日：2010-02-16

Applicant: Sony Corp ,  Tohoku Univ ,  ソニー株式会社 ,  国立大学法人東北大学

Inventor： WATANABE HIDEKI ,  MIYAJIMA TAKAO ,  IKEDA MASAO ,  OKI TOMOYUKI ,  KURAMOTO MASARU ,  YOKOYAMA HIROYUKI

IPC: H01S5/0625 ,  H01S5/026 ,  H01S5/065 ,  H01S5/22 ,  H01S5/343

CPC classification number: H01S5/0625 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/0602 ,  H01S5/0658 ,  H01S5/14 ,  H01S5/22 ,  H01S5/3216 ,  H01S5/34333

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor laser device accurately, surely and easily forming a second electrode and a ridge structure separated by a separating groove. SOLUTION: This method for manufacturing a bi-section GaN-based semiconductor laser device includes respective processes of: (A) forming a first compound semiconductor layer 30, a compound semiconductor layer 40 that constitutes a light-emitting region 41 and a saturable absorption region 42, and a second compound semiconductor layer 50; thereafter (B) forming a strip-shaped second electrode 62 on the second compound semiconductor layer 50; then (C) forming a ridge structure by etching at least a part of the second compound semiconductor layer 50 using the second electrode 62 as an etching mask; and thereafter (D) forming a separating groove 62C in the second electrode 62 by a wet etching method, and thereby separating the second electrode into a first portion 62A and a second portion 62B by the separating groove. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：为了准确地提供半导体激光装置的制造方法，可靠地容易地形成由分离槽分离的第二电极和脊状结构。 解决方案：用于制造双相GaN基半导体激光器件的方法包括以下各处理：（A）形成第一化合物半导体层30，构成发光区域41的化合物半导体层40和 饱和吸收区域42和第二化合物半导体层50; 此后（B）在第二化合物半导体层50上形成带状的第二电极62; 然后（C）通过使用第二电极62作为蚀刻掩模蚀刻第二化合物半导体层50的至少一部分来形成脊结构; 然后（D）通过湿式蚀刻法在第二电极62中形成分离槽62C，从而通过分离槽将第二电极分离成第一部分62A和第二部分62B。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010153429A

公开(公告)日：2010-07-08

申请号：JP2008327172

申请日：2008-12-24

Applicant: Sony Corp ,  Tohoku Univ ,  ソニー株式会社 ,  国立大学法人東北大学

Inventor： OTA MAKOTO ,  YOKOYAMA HIROYUKI ,  KURAMOTO MASARU ,  IKEDA MASAO

IPC: H01S5/22 ,  G11B7/125 ,  G11B7/22 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser which can perform sufficiently powerful self-pulsation operation without making the shape of a far-field image worse and stably obtain low-noise laser light, and is easy to manufacture. SOLUTION: The semiconductor laser having a ridge stripe 11 in a clad layer is provided with an insulating film 14 for current constriction on both side surfaces of the ridge stripe 11 and extendedly on bottom surfaces on both sides of the ridge stripe 11. The insulating film 14 for current constriction contains a high-refractive-index insulator, having a refractive index higher than an equivalent refractive index of a laser structure at the part of the ridge stripe 11, at a part other than parts nearby both resonator end surfaces. For example, a high-refractive-index insulating film 14a is formed on the bottom surfaces on both the sides of the ridge stripe 11. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种可以执行足够强大的自脉动操作而不使远场图像的形状更差并且稳定地获得低噪声激光的半导体激光器，并且易于制造。 解决方案：在包覆层中具有脊条11的半导体激光器在脊条11的两个侧表面上设置有用于电流收缩的绝缘膜14，并且在脊条11的两侧的底表面上延伸。 用于电流收缩的绝缘膜14包含折射率高于脊条11的一部分处的激光结构的折射率的折射率的高折射率绝缘体，除了两个谐振器端表面附近的部分之外的部分 。 例如，在脊条11的两侧的底面上形成高折射率绝缘膜14a。（C）2010，JPO＆INPIT

公开(公告)号：JP2010034252A

公开(公告)日：2010-02-12

申请号：JP2008194373

申请日：2008-07-29

Applicant: Sony Corp ,  Tohoku Univ ,  ソニー株式会社 ,  国立大学法人東北大学

Inventor： YOKOYAMA HIROYUKI ,  KONO SHUNSUKE ,  OKI TOMOYUKI ,  IKEDA MASAO ,  MIYAJIMA TAKAO ,  WATANABE HIDEKI

IPC: H01S5/068

CPC classification number: H01S5/06216 ,  H01S5/0428

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser with an ultrashort pulse and an ultrahigh output by a simple construction and structure.
SOLUTION: The semiconductor laser is driven by a pulse current with a value that is ten times or more as large as that of a threshold current or a pulse voltage that is twice or more as large as that of a threshold voltage, or the semiconductor laser emits a first light peak with a light intensity larger than three wats and with a half width of 20 picoseconds or less, and a second light peak, subsequent to the first light peak, that has an energy of 1 nano-joule or larger and a duration of 1 nanosecond or more.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：通过简单的结构和结构为半导体激光器提供超短脉冲和超高输出。 解决方案：半导体激光器由脉冲电流驱动，其值是阈值电流的十倍或更大的值，或者是阈值电压的两倍或更多的脉冲电压，或 所述半导体激光器发射具有大于3瓦特的光强度并且具有20皮秒或更小的半宽度的第一光峰，以及在所述第一光峰之后的具有1纳焦耳的能量的第二光峰或 较大且持续时间为1纳秒或更长。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2006229241A

公开(公告)日：2006-08-31

申请号：JP2006063811

申请日：2006-03-09

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KAWAI HIROHARU ,  IKEDA MASAO ,  NAKAMURA FUMIHIKO ,  HASHIMOTO SHIGEKI ,  ASAZUMA YASUNORI ,  YANASHIMA KATSUNORI

IPC: H01L33/32 ,  C23C16/34 ,  H01L21/205 ,  H01L33/00 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To prevent deterioration of a nitride-based group III-V compound semiconductor layer, containing In and to improve the quality of the nitride-based group III-V compound semiconductor layer that does not contain In, when the nitride-based group III-V compound semiconductor layer that does not contain In is grown on the nitride-based group III-V compound semiconductor layer containing In, such as GaInN layer at a higher growth temperature than that of the latter layer. SOLUTION: A protective film composed of AlGaN is grown on the nitride-based group III-V compound semiconductor layer, containing In at a growth temperature almost equal to or lower than that of the semiconductor layer thereof, and the nitride-based III-V compound semiconductor layer that does not contain In is grown thereon. Here, N 2 is used as the carrier gas, when the nitride-based group III-V compound semiconductor layer containing In and the protecting film are grown, and a mixed gas of H 2 and N 2 is used for the carrier gas, when the nitride-based group III-V compound semiconductor layer that does not contain In is grown. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题为了防止含有In的氮化物基III-V族化合物半导体层的劣化，并且为了提高不含In的氮化物系III-V族化合物半导体层的质量，当 不含In的基于氮化物的III-V族化合物半导体层生长在含In的氮化物基III-V族化合物半导体层上，例如GaInN层，其生长温度高于后一层。 解决方案：在氮化物基III-V族化合物半导体层上生长由AlGaN组成的保护膜，其中In生长温度几乎等于或低于其半导体层的生长温度，并且氮化物基 在其上生长不含In的III-V族化合物半导体层。 这里，使用N 2 作为载气，当含有In和保护膜的氮化物基III-V族化合物半导体层生长时，H 2 < 当不含有In的氮化物基III-V族化合物半导体层生长时，使用SB / N和SBB和N 作为载气。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005175050A

公开(公告)日：2005-06-30

申请号：JP2003410088

申请日：2003-12-09

Applicant: Sony Corp ,  ソニー株式会社

Inventor： TANAKA FUJI ,  TAKAHASHI KAZUO ,  TAKEYA MOTONOBU ,  IKEDA MASAO ,  ASANO TAKEHARU

IPC: H01S5/022

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser unit arranged not to cause unnecessary external resonance by suppressing the occurrence of multiple reflection between window glass and the emission surface of a laser diode.
SOLUTION: The semiconductor laser unit 1 comprises a collimate lens 2, a semiconductor laser 3, a lens supporting part 4, an LD supporting part 5, and a joint 6 wherein the semiconductor laser 3 comprises a laser diode 10, a stem 11, and an opening 12. A space surrounded by the collimate lens 2, the lens supporting part 4, the joint 6, the LD supporting part 5 and the semiconductor laser 10 is an enclosed space. An LD can 8 and the stem 11 are arranged to surround the laser diode 10, and the opening 12 is provided at a position where a laser beam emitted from the emission surface of the laser diode 10 passes. The laser beam 9 emitted from the emission surface of the laser diode 10 passes the enclosed space 7 directly to reach the collimate lens 2.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种半导体激光器单元，其通过抑制窗玻璃与激光二极管的发射表面之间的多次反射的发生而布置成不会引起不必要的外部谐振。 解决方案：半导体激光器单元1包括准直透镜2，半导体激光器3，透镜支撑部分4，LD支撑部分5和接头6，其中半导体激光器3包括激光二极管10， 由准直透镜2，透镜支撑部4，接头6，LD支撑部5和半导体激光器10围成的空间是封闭空间。 LD罐8和杆11布置成围绕激光二极管10，并且开口12设置在从激光二极管10的发射表面发射的激光束通过的位置。 从激光二极管10的发射表面发射的激光束9直接通过封闭空间7到达准直透镜2.版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2001313254A

公开(公告)日：2001-11-09

申请号：JP2001113914

申请日：2001-04-12

Applicant: SONY CORP

Inventor： YANASHIMA KATSUNORI ,  IKEDA MASAO ,  TOMIOKA SATOSHI

IPC: H01L21/205

Abstract: PROBLEM TO BE SOLVED: To provide a method for growing a nitride based III-V compound semiconductor layer which can produce a nitride based III-V compound semiconductor substrate having good crystallinity and no surface roughness nor crack with high productivity. SOLUTION: A thin GaN layer 2 is grown rate of 4 μm/h or less on a c-face sapphire substrate 1 by MOCVD or MBE, and then a sufficiently thick GaN layer 3 is grown on the GaN layer 2 at a rate higher than 4 μm/h but not higher than 200 μm/h by hydride VPE. Subsequently, the c-face sapphire substrate 1 is removed by etching or lapping to obtain a GaN substrate comprising the GaN layers 2, 3. Finally, the surface of the GaN layer 2 or 3 being used as a growth surface is etched or polished to bring about a high quality surface state.

公开(公告)号：JPH09116234A

公开(公告)日：1997-05-02

申请号：JP29358095

申请日：1995-10-17

Applicant: SONY CORP

Inventor： TOMITANI SHIGETAKA ,  IKEDA MASAO

IPC: H01L33/06 ,  H01L33/28 ,  H01L33/32 ,  H01L33/40 ,  H01S5/00 ,  H01S5/323 ,  H01S5/343 ,  H01S3/18 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device, such as the semiconductor light emitting device, etc., having excellent characteristics, high reliability, and a long service life. SOLUTION: In a semiconductor light emitting device using a II-VI group compound semiconductor, a p-type Znx Cd1-x Sey Te1-y (0