公开(公告)号：JP3939632B2

公开(公告)日：2007-07-04

申请号：JP2002339262

申请日：2002-11-22

Applicant: 三星電子株式会社Samsung Electronics Co.,Ltd.

Inventor： 炯 宰 愼 ,  壯 鎬 趙 ,  雲 培 金

IPC: B81B3/00 ,  B81C1/00 ,  G02B26/08

CPC classification number: G02B26/0841 ,  B81B3/0005 ,  B81B2201/042 ,  B81C1/0096 ,  B81C2201/112

公开(公告)号：EP1599736B1

公开(公告)日：2018-04-04

申请号：EP04710048.2

申请日：2004-02-11

Applicant: Murata Electronics Oy

Inventor： KUISMA, Heikki ,  LAHDENPERÄ, Juha ,  MUTIKAINEN, Risto

IPC: G01P15/08 ,  G01P15/125 ,  B81B7/00

CPC classification number: G01P15/125 ,  B81B3/0013 ,  B81B2201/0235 ,  B81C1/0096 ,  B81C2201/112 ,  G01P15/08 ,  G01P15/0802

Abstract: The invention relates to measuring devices used for the measuring of acceleration, and specifically to capacitive acceleration sensors. The capacitive acceleration sensor according to the present invention comprises a pair of electrodes composed of a movable electrode ( 4 ) and a stationary electrode ( 5 ), and, related to the pair of electrodes, an isolator protrusion having a special coating. The invention provides an improved, more durable sensor structure, which withstands wear caused by overload situations better than earlier structures.

公开(公告)号：EP2236455B1

公开(公告)日：2015-10-21

申请号：EP09004887.7

申请日：2009-04-02

Applicant: GFD Gesellschaft für Diamantprodukte mbH ,  Manufacture et fabrique de montres et chronomètres Ulysse Nardin Le Locle S.A. ,  Diamaze Microtechnology S.A.

Inventor： Dr. Flöter, André ,  Gretzschel, Ralph ,  von Gunten, Stéphane ,  Dr.- Ing. Gluche, Peter

IPC: B81B3/00

CPC classification number: B81B3/0075 ,  B81B2201/035 ,  B81C2201/112

公开(公告)号：EP2746217A1

公开(公告)日：2014-06-25

申请号：EP13196313.4

申请日：2013-12-09

Applicant: Freescale Semiconductor, Inc.

Inventor： Montez, Ruben B. ,  Steimle, Robert F.

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0005 ,  B81B2201/0221 ,  B81B2201/0235 ,  B81B2203/0181 ,  B81B2203/06 ,  B81C1/0038 ,  B81C1/00952 ,  B81C2201/0169 ,  B81C2201/112 ,  G01P15/0802 ,  G01P2015/0871 ,  G01P2015/0874

Abstract: A mechanism for reducing stiction in a MEMS device by decreasing an amount of carbon from TEOS-based silicon oxide films that can accumulate on polysilicon surfaces during fabrication is provided. A carbon barrier material film (510, 520) is deposited between one or more polysilicon layer (210, 230) in a MEMS device and the TEOS-based silicon oxide layer (220). This barrier material blocks diffusion of carbon into the polysilicon, thereby reducing accumulation of carbon on the polysilicon surfaces. By reducing the accumulation of carbon, the opportunity for stiction due to the presence of the carbon is similarly reduced.

Abstract translation: 提供了一种用于通过减少在制造期间可以积聚在多晶硅表面上的来自TEOS的氧化硅膜的碳的量来降低MEMS器件中的静电的机制。 在MEMS器件中的一个或多个多晶硅层（210,230）和基于TEOS的氧化硅层（220）之间沉积碳阻挡材料膜（510,520）。 该阻挡材料阻止碳扩散到多晶硅中，从而减少碳在多晶硅表面上的积累。 通过减少碳的积累，由于碳的存在而导致的静电机会同样地减少。

公开(公告)号：EP2088120A2

公开(公告)日：2009-08-12

申请号：EP09151895.1

申请日：2009-02-02

Applicant: Honeywell International Inc.

Inventor： Ridley, Jeff A.

IPC: B81C1/00

CPC classification number: B81C1/0096 ,  B81B3/001 ,  B81B2203/0361 ,  B81C2201/112 ,  Y10S438/951

Abstract: Systems and methods for MEMS device fabrication. A layer of photoresist is formed on a substrate. A first region of the substrate is exposed to a radiation source through a photomask. The first region of exposed photoresist is developed with a developer solution in order to etch the exposed regions to a first depth. A second region is exposed to radiation through a second photomask. The second photomask defines areas in which a bump feature is intended on the substrate. The second region is developed with the developer solution, preparing the first and second exposed regions for a layer of metal. A layer of metal is deposited on the substrate, such that the metal attaches to both the substrate and any remaining photoresist on the substrate. The remaining photoresist and its attached metal is dissolved away leaving an interconnect pattern and at least one bump feature.

Abstract translation: 用于MEMS器件制造的系统和方法。 在基板上形成一层光致抗蚀剂。 衬底的第一区域通过光掩模暴露于辐射源。 暴露的光致抗蚀剂的第一区域用显影剂溶液显影，以便将暴露的区域蚀刻到第一深度。 第二区域通过第二光掩模暴露于辐射。 第二个光掩模定义了在基板上有凸起特征的区域。 第二区域用显影剂溶液显影，制备用于一层金属的第一和第二暴露区域。 金属层沉积在基板上，使得金属附着到基板和基板上的任何剩余的光致抗蚀剂。 剩余的光致抗蚀剂及其附着的金属被溶解掉，留下互连图案和至少一个凹凸特征。

公开(公告)号：EP1416064B1

公开(公告)日：2008-05-07

申请号：EP03077499.6

申请日：2003-08-11

Applicant: Eastman Kodak Company

Inventor： Yang, Zhihao, c/o Eastman Kodak Company

IPC: C23C16/40 ,  B05D7/24 ,  C09D4/00 ,  C08G77/04 ,  C08G77/24 ,  B41J2/16

CPC classification number: B81C1/0096 ,  B05D1/60 ,  B81B3/0005 ,  B81C2201/0176 ,  B81C2201/112 ,  B82Y30/00 ,  C09D4/00 ,  C08G77/24 ,  C08G77/04

公开(公告)号：EP1781566A1

公开(公告)日：2007-05-09

申请号：EP05726508.4

申请日：2005-06-21

Applicant: ROBERT BOSCH GMBH

Inventor： LÄRMER, Franz ,  REICHENBACH, Ralf

IPC: B81B3/00

CPC classification number: B81C1/0096 ,  B81B3/0005 ,  B81C2201/112 ,  B81C2201/117

Abstract: The invention relates to a method for depositing a nonstick coating onto the surface of micromechanical structures (5a; 7a) on a substrate (Sub), whereby the material or precursor material to be deposited is supplied to the structures (5a; 7a) in a solvent and transport medium. The solvent and transport medium used is a supercritical CO2 fluid. Deposition of the material or precursor material is brought about by a physical change of state of the CO2 fluid or by a surface reaction between the surface and the precursor material. The inventive method allows to coat the micromechanical structures (5a; 7a) in a cavern (14) or in a cavity after their encapsulation, whereby the material to be deposited is supplied via access channels (15) or perforation holes.

公开(公告)号：EP1416064A3

公开(公告)日：2005-06-15

申请号：EP03077499.6

申请日：2003-08-11

Applicant: EASTMAN KODAK COMPANY

Inventor： Yang, Zhihao, c/o Eastman Kodak Company

IPC: C23C16/40 ,  B05D7/24 ,  C09D4/00 ,  C08G77/04 ,  C08G77/24 ,  B41J2/16

CPC classification number: B81C1/0096 ,  B05D1/60 ,  B81B3/0005 ,  B81C2201/0176 ,  B81C2201/112 ,  B82Y30/00 ,  C09D4/00 ,  C08G77/24 ,  C08G77/04

Abstract: A method for coating a micro-electromechanical systems device with a silane coupling agent by a) mixing the silane coupling agent with a low volatile matrix material in a coating source material container; b) placing the micro-electromechanical systems device in a vacuum deposition chamber which in connection with the coating source material container; c) pumping the vacuum deposition chamber to a predetermined pressure; and maintaining the pressure of the vacuum deposition chamber for a period of time in order to chemically vapor deposit the silane coupling agent on the surface of the micro-electromechanical systems device.

公开(公告)号：EP1232996A3

公开(公告)日：2005-01-19

申请号：EP01127972.6

申请日：2001-11-24

Applicant: ROBERT BOSCH GMBH

Inventor： Fischer, Frank ,  Frey, Wilhelm, Dr.

IPC: B81B3/00

CPC classification number: B81B3/0008 ,  B81B3/0086 ,  B81B2201/0235 ,  B81C2201/112

Abstract: Bei der Herstellung eines mikromechanischen Bauelements mit gegeneinander beweglichen Komponenten (7, 8) aus einem Substrat wird eine leitfähige Beschichtung (10) wenigstens auf einander zugewandten Oberflächen (9) der gegeneinander beweglichen Komponenten (7, 8) aufgebracht.

公开(公告)号：EP1258035A1

公开(公告)日：2002-11-20

申请号：EP01905118.4

申请日：2001-01-29

Applicant: ANALOG DEVICES, INCORPORATED

Inventor： MARTIN, John, R.

IPC: H01L21/31 ,  H01L21/469 ,  H01L21/00

CPC classification number: H01L21/3122 ,  B81B3/0005 ,  B81C1/0096 ,  B81C2201/0176 ,  B81C2201/112 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02263 ,  H01L24/05 ,  H01L24/45 ,  H01L2224/05624 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48624 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/16152 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014

Abstract: This invention disclosed a process for forming durable anti-stiction surfaces on micromachined structures while they are still in wafer form (i.e., before they are separated into discrete devices for assembly into packages). This process involves the vapor deposition of a material to create a low stiction surface. It also discloses chemicals which are effective in imparting an anti-stiction property to the chip. These include polyphenylsiloxanes, silanol terminated phenylsiloxanes and similar materials.

Abstract translation: 本发明盘松一过程用于形成上微加工结构耐用的防粘连表面，而它们在晶片形式沉默的（即，之前它们被分离成分立器件组装成包）。 这一过程涉及材料的气相沉积，以产生低的静摩擦的表面。 它因此无盘化学品，其有效的防粘连性能芯片的传授。 这些包括聚苯基，硅烷醇封端苯基硅氧烷以及类似材料。