公开(公告)号：EP1433198A2

公开(公告)日：2004-06-30

申请号：EP02748264.5

申请日：2002-07-30

Applicant: Micell Technologies

Inventor： DEYOUNG, James, P. ,  MCCLAIN, James, P. ,  COLE, Michael, E. ,  WORM, Steve, L. ,  BRAINARD, David, E.

IPC: H01L21/306 ,  B08B7/00 ,  H01L21/00

CPC classification number: C23G5/00 ,  B08B7/0021 ,  B81C1/00841 ,  B81C2201/117 ,  H01L21/02063 ,  H01L21/67051 ,  Y10S134/902

Abstract: According to method embodiments of the present invention, a method for cleaning a microelectronic substrate includes placing the substrate in a pressure chamber. A process fluid including dense phase CO2 is circulated through the chamber such that the process fluid contacts the substrate. The phase of the CO2 is cyclically modulated during at least a portion of the step of circulating the process fluid.

公开(公告)号：EP0746013A3

公开(公告)日：1999-10-27

申请号：EP96108733.5

申请日：1996-05-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Wallace, Robert M. ,  Douglas, Monte A.

IPC: H01L21/306 ,  G02B26/08

CPC classification number: B81C1/0096 ,  B08B7/00 ,  B08B7/0021 ,  B81B3/0005 ,  B81C1/00857 ,  B81C2201/112 ,  B81C2201/117 ,  G02B26/0841

Abstract: A method of cleaning and treating a device, including those of the micromechanical (10) and semiconductor type. The surface of a device, such as the landing electrode (22) of a digital micromirror device (10), is first cleaned with a supercritical fluid (SCF) in a chamber (50) to remove soluble chemical compounds, and then maintained in the SCF chamber until and during the subsequent passivation step. Passivants including PFDA and PFPE are suitable for the present invention. By maintaining the device in the SCF chamber, and without exposing the device to, for instance, the ambient of a clean room, organic and inorganic contaminants cannot be deposited upon the cleaned surface prior to the passivation step. The present invention derives technical advantages by providing an improved passivated surface that is suited to extend the useful operation life of devices, including those of the micromechanical type, reducing stiction forces between contacting elements such as a mirror and its landing electrode. The present invention is also suitable for cleaning and passivating other surfaces including a surface of semiconductor wafers, and the surface of a hard disk memory drive.

公开(公告)号：EP0689076A1

公开(公告)日：1995-12-27

申请号：EP95109614.8

申请日：1995-06-21

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Douglas, Monte A. ,  Wallace, Robert M.

IPC: G02B26/08 ,  H01H1/00

CPC classification number: B81C1/0096 ,  B81C1/00968 ,  B81C2201/117 ,  G02B26/0841 ,  H01H1/0036

Abstract: A method of unsticking contacting elements (11, 17) of a micro-mechanical device (30). The device is exposed to either a low surface tension liquid with a surfactant (32) or to a supercritical fluid (62) so as to avoid damage to fragile components of the device (30). The exposure conditions are controlled so as to provide optimum results without damage to the device.

Abstract translation: 一种解开微机械装置（30）的接触元件（11,17）的方法。 该装置暴露于具有表面活性剂（32）的低表面张力液体或超临界流体（62），以避免损坏装置（30）的易碎部件。 控制曝光条件以提供最佳结果而不损坏装置。

公开(公告)号：JP4753383B2

公开(公告)日：2011-08-24

申请号：JP2007524311

申请日：2005-06-21

Applicant: ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツングRobert Bosch Gmbh

Inventor： レルマー フランツ ,  ライヒェンバッハ ラルフ

IPC: B81C1/00 ,  B81B3/00 ,  C23C16/455

CPC classification number: B81C1/0096 ,  B81B3/0005 ,  B81C2201/112 ,  B81C2201/117

公开(公告)号：JP2006508521A

公开(公告)日：2006-03-09

申请号：JP2003569749

申请日：2003-02-14

Applicant: 東京エレクトロン株式会社

Inventor： ウェンデル アウトレイ，アラン ,  ジェイ． アリーナ−フォスター，シャンタル ,  シリング，ポール ,  アラン ライザ，ニコラス

IPC: H01L21/027 ,  B81C1/00 ,  F26B3/00 ,  F26B5/06 ,  G03F7/30 ,  G03F7/40 ,  H01L21/304

CPC classification number: B81C1/00 ,  B81C2201/117 ,  G03F7/40

Abstract: ポリマーフィルムを有する対象物を乾燥するための方法（１０）であって、そこでは対象物がリンス液に浸されている。 その対象物がリンス浴から取り出され（２０）、そして充分な量のリンス液が対象物から蒸発し得る前に、その対象物が溶剤浴に据えられる（２０）。 溶剤浴中の溶剤の密度が、力に関してポリマーフィルムの向く方向に依存する。 対象物が溶剤浴から取り出される（３０）。 乾燥プロセスが実施される（４０）。

公开(公告)号：JP2005150332A

公开(公告)日：2005-06-09

申请号：JP2003384657

申请日：2003-11-14

Applicant: Sony Corp ,  ソニー株式会社

Inventor： AISAKA TSUTOMU

IPC: B81C1/00 ,  B81B3/00 ,  H01L21/302 ,  H01L21/304 ,  H01L21/311

CPC classification number: H01L21/31116 ,  B81C1/00047 ,  B81C1/00547 ,  B81C2201/117

Abstract: PROBLEM TO BE SOLVED: To provide an etching method capable of forming a large hollow or a space having a complicated configuration with high formal accuracy by etching a sacrificial layer through a very small etching opening.
SOLUTION: A work as an object of processing is exposed to a processing fluid containing an etching reactant so as to undergo an etching treatment (a third step S3, a fourth step S4), and thereafter a processing chamber is reduced in internal pressure so as to make the processing fluid near the work lower in density than that at the fourth step S4 (a first step S1). When these steps S1 to S4 are repeatedly carried out, the new processing fluid containing the etching reactant is supplied to a processing atmosphere where the work is arranged at the steps S3 and S4 which are carried out after the first step S1, so that the processing fluid near the work is increased in density than that at the first step S1.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种能够通过非常小的蚀刻开口蚀刻牺牲层来形成具有高形式精度的复杂构造的大型中空或空间的蚀刻方法。 解决方案：作为处理对象的工作暴露于含有蚀刻反应物的处理流体，以进行蚀刻处理（第三步骤S3，第四步骤S4），之后处理室内部减少 使得工件附近的加工流体的密度比第四步骤S4的密度低（第一步骤S1）。 当重复执行这些步骤S1至S4时，将含有蚀刻反应物的新的处理流体提供给在第一步骤S1之后执行的步骤S3和S4处的工作布置的处理气氛，使得处理 工件附近的流体密度比第一步骤S1的密度增加。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：US20120196445A1

公开(公告)日：2012-08-02

申请号：US13024782

申请日：2011-02-10

Applicant: Kwon-Taek LIM

Inventor： Kwon-Taek LIM

IPC: H01L21/306

CPC classification number: H01L21/31111 ,  B81C1/00928 ,  B81C2201/117

Abstract: An aspect of the invention is to provide a method and apparatus for etching the silicon oxide layer of a semiconductor substrate, whereby the processing time for cleaning or rinsing, as well as any undesired aftereffects by residual hydrofluoric acid, may be reduced, in using the dry etching method involving the use of dense carbon dioxide that contains hydrofluoric acid, during the manufacturing process of a micro-electronic device.

Abstract translation: 本发明的一个方面是提供一种用于蚀刻半导体衬底的氧化硅层的方法和装置，从而可以减少用于清洗或冲洗的处理时间以及由残留的氢氟酸引起的任何不期望的后果， 在微电子器件的制造过程中涉及使用含有氢氟酸的致密二氧化碳的干蚀刻方法。

公开(公告)号：US07432572B2

公开(公告)日：2008-10-07

申请号：US11229968

申请日：2005-09-19

Applicant: Joshua Malone

Inventor： Joshua Malone

IPC: H01L29/84

CPC classification number: B81C1/00833 ,  B81B2201/047 ,  B81C1/00317 ,  B81C2201/056 ,  B81C2201/117 ,  B81C2203/0145 ,  G02B26/0833

Abstract: The present invention provides methods of manufacturing a MEMS assembly. In one embodiment, the method includes mounting a MEMS device, such as a MEMS mirror array, on an assembly substrate, where the MEMS device has a sacrificial layer over components formed therein. The method also includes coupling an assembly lid to the assembly substrate and over the MEMS device to create an interior of the MEMS assembly housing the MEMS device, whereby the coupling maintains an opening to the interior of the MEMS assembly. Furthermore, the method includes removing the sacrificial layer through the opening. A MEMS assembly constructed according to a process of the present invention is also disclosed.

Abstract translation: 本发明提供了制造MEMS组件的方法。 在一个实施例中，该方法包括将MEMS器件（例如MEMS反射镜阵列）安装在组装衬底上，其中MEMS器件在其中形成的部件上具有牺牲层。 该方法还包括将组装盖耦合到组装衬底和MEMS器件上以形成容纳MEMS器件的MEMS组件的内部，由此耦合保持到MEMS组件的内部的开口。 此外，该方法包括通过开口去除牺牲层。 还公开了根据本发明的方法构造的MEMS组件。

公开(公告)号：US07279431B2

公开(公告)日：2007-10-09

申请号：US10464597

申请日：2003-06-18

Applicant: Eric J. Bergman

Inventor： Eric J. Bergman

IPC: H01L21/302

CPC classification number: B81C1/0092 ,  B81C1/00928 ,  B81C2201/117 ,  H01L21/6708

Abstract: An etch release for a MEMS device on a substrate includes etching the substrate with an etchant vapor and a wetting vapor. A thermal bake of the MEMS device, after the etch release may be used to volatilize residues. A supercritical fluid may also be used to remove residual contaminants. The combination of the etchant vapor, such as HF, and the wetting vapor, such as an alcohol vapor, improves the uniformity of the etch undercut on the substrate.

Abstract translation: 衬底上的MEMS器件的蚀刻释放包括用蚀刻剂蒸气和润湿蒸气蚀刻衬底。 在蚀刻释放之后，MEMS器件的热烘烤可用于挥发残留物。 也可以使用超临界流体来除去残留的污染物。 蚀刻剂蒸气（例如HF）和润湿蒸气（例如醇蒸汽）的组合改善了基板上蚀刻底切的均匀性。

公开(公告)号：US07160815B2

公开(公告)日：2007-01-09

申请号：US10782355

申请日：2004-02-19

Applicant: Michael B. Korzenski ,  Thomas H. Baum ,  Chongying Xu ,  Eliodor G. Ghenciu

Inventor： Michael B. Korzenski ,  Thomas H. Baum ,  Chongying Xu ,  Eliodor G. Ghenciu

IPC: H01L21/461

CPC classification number: B81C1/00936 ,  B08B7/0021 ,  B81C2201/0108 ,  B81C2201/117 ,  H01L21/02063

Abstract: A method and composition for removing silicon-containing sacrificial layers from Micro Electro Mechanical System (MEMS) and other semiconductor substrates having such sacrificial layers is described. The etching compositions include a supercritical fluid (SCF), an etchant species, a co-solvent, and optionally a surfactant. Such etching compositions overcome the intrinsic deficiency of SCFs as cleaning reagents, viz., the non-polar character of SCFs and their associated inability to solubilize polar species that must be removed from the semiconductor substrate. The resultant etched substrates experience lower incidents of stiction relative to substrates etched using conventional wet etching techniques.

Abstract translation: 描述了用于从微机电系统（MEMS）和其它具有这种牺牲层的半导体衬底去除含硅牺牲层的方法和组合物。 蚀刻组合物包括超临界流体（SCF），蚀刻剂物质，共溶剂和任选的表面活性剂。 这样的蚀刻组合物克服了作为清洗剂的SCF的固有缺陷，即SCF的非极性特征以及它们不溶于必须从半导体衬底去除的极性物质。 所得到的蚀刻的衬底相对于使用常规湿蚀刻技术蚀刻的衬底的沉降事件较少。