Abstract:
An analyte detection package includes a chamber, a surface-enhanced luminescence analyte stage within the chamber, and a tunable lens integrated with the package to focus radiation onto the analyte stage.
Abstract:
Disclosed is an illumination source apparatus comprising a high harmonic generation medium (910), a pump radiation source and a spatial filter (940). The pump radiation source emits a beam (900) of pump radiation having a profile comprising no pump radiation in a central region of the beam and excites the high harmonic generation medium so as to generate high harmonic radiation (920). The pump radiation (950) and the generated high harmonic radiation are spatially separated beyond the focal plane of the beam of pump radiation. The spatial filter is located beyond a focal plane of the beam of pump radiation, and blocks the pump radiation. Also disclosed is a method of generating high harmonic measurement radiation optimized for filtration of pump radiation therefrom.
Abstract:
A microscopy system includes a microscope apparatus (100,20;200,20:300,20) that has an objective (110) and a correction device (111) correcting for a spherical aberration, and a refractive index calculator (20d) that calculates a refractive index of a sample (S) at a target position in the sample (S) on the basis of a plurality of target set values each of which is a set value of the correction device (111) and each of which corresponds to an amount of spherical aberration that occurs in the microscope apparatus (100,20;200,20:300,20) when an observation target plane is situated at a different position in the sample (S) in an optical-axis direction of the objective (110).
Abstract:
In an objective optical system used for sample surface analysis by an attenuated total reflectance method by attaching to an infrared microscope, in the system including a convex secondary mirror (112) configured to reflect a measurement light irradiated from the infrared microscope, a concave primary mirror (111) configured to reflect the measurement light reflected by the secondary mirror, and a prism (138) to which the measurement light reflected by the primary mirror is irradiated, a light shielding means (140) configured to shield a part of the light beam of the measurement light is provided on an optical path of the measurement light between the primary mirror and the prism. According to such a configuration, even if there is no enough space on the front side of the secondary mirror, it becomes possible to adjust the incident angle of the measurement light incident on the prism and the sample, easily switch between the measurements which prioritizes the optical throughput and the measurement which prioritizes mitigation of the anomalous dispersion using a single objective optical system, and easily acquire a plurality of absorption spectra measured at different penetration depths.
Abstract:
The present invention provides a method and compact apparatus for laser induced breakdown atomic emission spectroscopy from a targeted sample having a laser generating a laser beam, the laser beam directed to the sample, optical means for manipulating the laser beam in order maximize laser fluency at the target surface of the sample, the laser beam generating ablation and plasma emission from the sample at the target surface, an emission spectrometer having a detector for detecting a plasma plume from the plasma emission.
Abstract:
A high sensitivity image sensor comprises an epitaxial layer of silicon that is intrinsic or lightly p doped (such as a doping level less than about 1013 cm-3). CMOS or CCD circuits are fabricated on the front-side of the epitaxial layer. Epitaxial p and n type layers are grown on the backside of the epitaxial layer. A pure boron layer is deposited on the n-type epitaxial layer. Some boron is driven a few nm into the n-type epitaxial layer from the backside during the boron deposition process. An anti-reflection coating may be applied to the pure boron layer. During operation of the sensor a negative bias voltage of several tens to a few hundred volts is applied to the boron layer to accelerate photo-electrons away from the backside surface and create additional electrons by an avalanche effect. Grounded p-wells protect active circuits as needed from the reversed biased epitaxial layer.