中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

581 records (took 0.044 seconds)

    광 집적 회로, 이를 포함하는 반도체 장치 및 그 제조 방법
    72.
    发明公开
    광 집적 회로, 이를 포함하는 반도체 장치 및 그 제조 방법 审中-实审
    光学集成电路，包括其的半导体器件及其制造方法

    公开(公告)号：KR1020140000856A

    公开(公告)日：2014-01-06

    申请号：KR1020120068377

    申请日：2012-06-26

    Applicant: 삼성전자주식회사

    Inventor： 김성구 ,  신동재 ,  신용확 ,  최영 ,  하경호

    IPC: H01L27/02 ,  H01L27/14

    CPC classification number: G02B6/12 ,  G02B6/12004 ,  G02F1/2257 ,  G02F2001/212 ,  G02F2201/063 ,  G02F2201/066 ,  G02F2202/105

    Abstract: An optical integrated circuit includes a substrate including a single crystalline semiconductor material, a passive device including a single crystalline semiconductor material and extended onto the substrate in the crystal direction of the substrate, and an active device including a single crystalline semiconductor material and extended onto the substrate in the crystal direction of the substrate. [Reference numerals] (AA,HH) First direction; (BB,GG) Second direction; (CC,FF) Third direction; (DD,EE) Fourth direction

    Abstract translation: 光学集成电路包括：包括单晶半导体材料的衬底，包括单晶半导体材料的无源器件，并且在衬底的<100>晶体方向上延伸到衬底上，以及包括单晶半导体材料的有源器件和 在衬底的<110>晶体方向延伸到衬底上。 （标号）（AA，HH）第一方向; （BB，GG）第二方向; （CC，FF）第三方向; （DD，EE）第四方向

    광전 소자 및 그를 구비한 마흐-젠더 광변조기
    73.
    发明公开
    광전 소자 및 그를 구비한 마흐-젠더 광변조기 有权
    电光设备和MACH-ZEHNDER光学调制器使用相同

    公开(公告)号：KR1020120026318A

    公开(公告)日：2012-03-19

    申请号：KR1020100088473

    申请日：2010-09-09

    Applicant: 한국전자통신연구원

    Inventor： 박정우 ,  김경옥

    IPC: H01L31/10

    CPC classification number: G02F1/025 ,  G02F1/2257 ,  G02F2201/063

    Abstract: PURPOSE: An electro-optic device and mach-zehnder optical modulator used the same are provided to improve the operation speed of an optical device by first to third impurity region of an NPN structure or a PNP structure. CONSTITUTION: A rib wave guide(10) comprises a mesa(14) and the slab(12) in the lower part of the mea. The rib wave guide is extended to the cross direction of first to third impurity regions(40,50,60). A first impurity region is formed in the slab in one side of the mesa. A third impurity region is formed in the slab in the other side of the mesa facing to the first impurity region. A lower clad(18) including a silicon oxide film is formed over the substrate(16).

    Abstract translation: 目的：提供一种使用其的电光器件和马赫 - 泽德光调制器，以通过NPN结构或PNP结构的第一至第三杂质区域提高光学器件的操作速度。 构成：肋波导（10）包括台面（14）和板的下部（12）。 肋波导延伸到第一至第三杂质区（40,50,60）的交叉方向。 第一杂质区域形成在台面一侧的板坯中。 在与第一杂质区相对的台面的另一侧的板坯中形成第三杂质区。 在衬底（16）上形成包括氧化硅膜的下包层（18）。

    도핑층을 이용하여 임피던스 정합용 저항 성분을 집적한반도체 광변조기 및 그 제작 방법
    74.
    发明授权
    도핑층을 이용하여 임피던스 정합용 저항 성분을 집적한반도체 광변조기 및 그 제작 방법 失效
    采用半导体掺杂层的阻抗匹配电阻 - 集成光调制器及其制造方法

    公开(公告)号：KR100634207B1

    公开(公告)日：2006-10-16

    申请号：KR1020040107027

    申请日：2004-12-16

    Applicant: 한국전자통신연구원

    Inventor： 권용환 ,  최중선

    IPC: H01L31/10

    CPC classification number: G02F1/025 ,  G02F1/0121 ,  G02F2201/063 ,  H01L2224/48091 ,  H01L2924/00014

    Abstract: 본 발명은 초고속 광변조기 모듈 제작시 성능향상 및 비용절감을 위해서 임피던스 정합을 위한 저항 성분을 소자 내에 집적한 반도체 광변조기 소자의 구조 및 그 제작 방법에 관한 것이다. 본 발명에서는 광변조기 소자의 에피층 내의 도핑층을 임피던스 정합을 위한 저항 성분으로 이용하는 방법을 제안한다. 이 방법을 이용하면 임피던스 정합을 위해 소자 내외부에서 별도의 저항 성분을 사용하는 기존의 광 소자 제작 공정보다 용이하게 광 소자를 구현할 수 있는 장점이 있다.
    광 소자, 반도체 광 변조기, 임피던스 정합, 저항 성분, 도핑층, 코플래너 전극

    OPTICAL MODULATOR
    75.
    发明公开
    OPTICAL MODULATOR 审中-公开

    公开(公告)号：EP3232255A4

    公开(公告)日：2018-07-25

    申请号：EP15866773

    申请日：2015-12-08

    Applicant: NIPPON TELEGRAPH & TELEPHONE

    Inventor： TSUZUKI KEN ,  KAMEI SHIN ,  JIZODO MAKOTO

    IPC: G02F1/025 ,  G02F1/21 ,  G02F1/225

    CPC classification number: G02F1/2257 ,  G02F1/025 ,  G02F2001/212 ,  G02F2201/063 ,  G02F2201/127

    Abstract: The present invention provides an optical modulator including a substrate and a phase modulation portion on the substrate. The phase modulation portion includes an optical waveguide comprised of a first clad layer, a semiconductor layer that is laminated on the first clad layer and has a refraction index higher than the first clad layer and a second clad layer that is laminated on the semiconductor layer and has a refraction index lower than the semiconductor layer, a first traveling wave electrode, and a second traveling wave electrode. The semiconductor layer includes a rib that is formed in the optical waveguide in an optical axis direction and is a core of the optical waveguide, a first slab that is formed in the optical axis direction in one side of the rib, a second slab that is formed in the optical axis direction in the other side of the rib, a third slab that is formed in the first slab in the optical axis direction at the opposite side to the rib, and a fourth slab that is formed in the second slab in the optical axis direction at the opposite side to the rib. The first slab is formed to be thinner than the rib and the third slab, and the second slab is formed to be thinner than the rib and the fourth slab.

    GERMANIUM-SILICON ELECTROABSORPTION MODULATOR
    76.
    发明公开
    GERMANIUM-SILICON ELECTROABSORPTION MODULATOR 审中-公开
    锗硅，ELEKTROABSORPTIONSMODULATOR

    公开(公告)号：EP3163359A4

    公开(公告)日：2017-06-28

    申请号：EP14898811

    申请日：2014-07-31

    Applicant: HUAWEI TECH CO LTD

    Inventor： LI YAMING ,  CHENG BUWEN

    IPC: G02F1/025 ,  H01L27/15

    CPC classification number: G02F1/025 ,  G02F2001/0157 ,  G02F2201/063 ,  H01L27/15

    Abstract: An electro-absorption modulator (100) is provided, including: a substrate layer (110), including a silicon substrate (112) and an oxide layer (114) disposed on the silicon substrate; top-layer silicon (120), formed on the oxide layer (114), where a waveguide layer (122) is formed on the top-layer silicon (120); a doping layer, including a first doping panel (132) and a second doping panel (133), where a first-type light doping area (134) is formed on the first doping panel (132), a second-type light doping area (135) is formed on the second doping panel (133), and the first-type light doping area (134), the waveguide layer (122), and the second-type light doping area (135) form a PIN junction; and a modulation layer (140), disposed on the waveguide layer (122) and connected in parallel to the PIN junction. For an incident beam with a specific wavelength, when a modulating electrical signal is reversely applied to the PIN junction, a light absorption coefficient of the modulation layer (140) for the beam changes with the modulating electrical signal, and after the beam passes through a modulation area, optical power of the beam also correspondingly changes, so that electro-optic modulation is implemented for the beam.

    Abstract translation: 提供一种电吸收调制器（100），包括：衬底层（110），其包括硅衬底（112）和设置在硅衬底上的氧化物层（114） 形成在所述氧化物层上的顶层硅层，其中在所述顶层硅层上形成有波导层; 包括第一掺杂面板132和第二掺杂面板133的掺杂层，其中在所述第一掺杂面板132上形成第一类型的轻掺杂区域134， （135）形成在所述第二掺杂面板（133）上，所述第一类型轻掺杂区（134），所述波导层（122）和所述第二类型轻掺杂区（135）形成PIN结; 和设置在波导层（122）上并与PIN结并联连接的调制层（140）。 对于具有特定波长的入射光束，当调制电信号反向施加到PIN结时，用于该光束的调制层（140）的光吸收系数随着调制电信号而改变，并且在光束穿过 调制区域，光束的光功率也相应地发生变化，从而对光束进行电光调制。

    WAVELENGTH SELECTION SWITCH AND WAVELENGTH SELECTION METHOD
    77.
    发明公开
    WAVELENGTH SELECTION SWITCH AND WAVELENGTH SELECTION METHOD 审中-公开
    WENENLÄNGENWAHLSCHALTERUNDWELLENLÄNGENAUSWAHLVERFAHREN

    公开(公告)号：EP3156832A1

    公开(公告)日：2017-04-19

    申请号：EP14897551.9

    申请日：2014-07-18

    Applicant: Huawei Technologies Co. Ltd.

    Inventor： MA, Xiao ,  ZHANG, Xuecang ,  YANG, Jianyi

    IPC: G02B6/35

    CPC classification number: G02F1/3133 ,  G02B6/29343 ,  G02B6/29382 ,  G02B6/29395 ,  G02B6/35 ,  G02F1/0147 ,  G02F2201/063 ,  G02F2203/15

    Abstract: A wavelength selective switch and a wavelength selection method are provided, where the wavelength selective switch includes: a dual-microring resonator, including a first microring (111) and a second microring (112) that are connected in series, where the first microring (111) and the second microring (112) are silicon-based microrings and respectively include one annular PN junction, and a direction of the annular PN junction of the first microring is the same as that of the annular PN junction of the second microring; an electric tuning module (120), where a first electric port of the electric tuning module (120) is connected to a P zone of the first microring (111) and an N zone of the second microring (112), a second electric port of the electric tuning module (120) is connected to an N zone of the first microring (111) and a P zone of the second microring (112), and the electric tuning module (120) is configured to apply bias voltages with reverse directions to the annular PN junction of the first microring 111 and the annular PN junction of the second microring (112); and a thermal tuning module (130), configured to adjust an operating temperature of the dual-microring resonator. The switch is suitable for a high-density integrated optical interconnection.

    Abstract translation: 提供一种波长选择开关和波长选择方法，其中波长选择开关包括：双微环谐振器，包括串联连接的第一微环（111）和第二微环（112），其中第一微环 111）和第二微环（112）是硅基微环，并且分别包括一个环形PN结，并且第一微环的环形PN结的方向与第二微环的环形PN结的方向相同; 电调谐模块（120），其中电调谐模块（120）的第一电气端口连接到第一微环（111）的P区和第二微环（112）的N区，第二电端口 所述电调谐模块（120）连接到所述第一微环（111）的N区和所述第二微环（112）的P区，并且所述电调谐模块（120）被配置为施加相反方向的偏置电压 到第一微环111的环形PN结和第二微环（112）的环形PN结; 以及热调谐模块（130），其被配置为调节所述双微环谐振器的工作温度。 该开关适用于高密度集成光互连。

Patent Agency Ranking