-
公开(公告)号：KR101783621B1
公开(公告)日：2017-10-11
申请号：KR1020110092203
申请日：2011-09-09
Applicant: 삼성전자주식회사
IPC: G02B6/293 , G02B6/12 , H04B10/2581 , H04Q11/00
CPC classification number: H04B10/25 , G02B6/107 , G02B6/12004 , G02B6/12007 , G02B6/14 , G02B6/29344 , G02B6/2938 , Y10T29/49
Abstract: 광연결장치가개시된다. 상기광 연결장치는메인광 도파로와, N개의서브광 도파로들과, 각각이상기메인광 도파로와상기 N개의서브광 도파로들각각의사이에서모드커플링동작을수행하기위한 N개의모드커플러들, 및상기메인광 도파로의출력단과상기 N개의서브광 도파로들각각의출력단에접속된광 파장필터를포함한다.
Abstract translation: 公开了一种光学连接装置。 该光耦合装置包括主光波导，N个副光波导，用于在每个移相器主光波导和N个副光波导之间执行模式耦合操作的N型耦合器， 以及连接到主光波导的输出端和N个子光波导中的每一个的输出端的光学波长滤波器。
-
公开(公告)号：KR1020170075439A
公开(公告)日：2017-07-03
申请号：KR1020150185091
申请日：2015-12-23
Applicant: 삼성전자주식회사
IPC: G02B6/12
CPC classification number: G02B6/1228 , G02B6/125 , G02B6/136 , G02B2006/12097
Abstract: 본발명의기술적사상에의한광 소자는, 기판; 상기기판의일부분에형성된트렌치; 상기트렌치내에형성된클래드층; 상기클래드층상에제1 두께로형성된제1 구조물; 상기클래드층상에상기제1 두께와는다른제2 두께로형성된제2 구조물;을포함할수 있다. 또한, 본발명의기술적사상에의한광 소자는, 기판; 상기기판의일부분에형성된트렌치내에형성된클래드층; 상기클래드층 상에형성된제1 층및 상기제1 층의일부영역상에적층된제2 층을포함하면서제1 방향으로연장되는광 전달구조체;를포함하고, 상기제1 층은, 상기제1 방향을따라연장되면서점차감소하는너비를가지는제1 영역과, 상기제1 영역중 최소너비를가지는단부와연결되어, 상기최소너비를가지면서연장되는제2 영역을포함하고, 상기제2 층은, 상기제1 방향을따라연장되면서점차감소하는너비를가지고, 상기제2 층의상면이삼각형상을가질수 있다.
Abstract translation: 根据本发明的技术思想，轻元件包括基板; 形成在衬底的一部分中的沟槽; 在沟槽中形成的包层; 形成在所述包覆层上以具有第一厚度的第一结构; 以及在包层上具有与第一厚度不同的第二厚度的第二结构。 根据本发明的技术方面，提供了一种轻元件，包括：基板; 形成在衬底的一部分中形成的沟槽中的包覆层; 并且第一层形成在包覆层上并且第二层堆叠在第一层的部分区域上并沿第一方向延伸， 并且第二区域连接到具有第一区域的最小宽度并且以最小宽度延伸的端部，其中第二区域具有宽度 ，沿第一方向逐渐减小的宽度，并且第二层的上表面具有三角形形状。
-
公开(公告)号：KR1020130040455A
公开(公告)日：2013-04-24
申请号：KR1020110105237
申请日：2011-10-14
Applicant: 삼성전자주식회사
IPC: H01L31/18 , G02B6/30 , G02B6/12 , H01L31/0232 , H01L31/103 , G02B6/132 , G02B6/136
CPC classification number: H01L31/02327 , G02B6/12004 , G02B6/132 , G02B6/136 , G02B6/30 , G02B6/305 , H01L31/103 , H01L31/1804 , H01L31/1808 , Y02E10/547 , Y02P70/521
Abstract: PURPOSE: A photodetector structure is provided to reduce manufacturing costs by forming a germanium single crystal in a bulk silicon substrate. CONSTITUTION: A first silicon layer(410) is made by filling a trench with a cladding material. The refractive index of the cladding material is smaller than that of silicon. A second silicon layer(430) is formed in the first silicon layer and the upper part of the cladding material. An oxide layer(420) is used as a lower cladding of an optical wave guide. A germanium layer(440) is grown by using the seed of a bulk silicon wafer to form a single crystal.
Abstract translation: 目的：提供光电探测器结构，通过在体硅衬底中形成锗单晶来降低制造成本。 构成：通过用包层材料填充沟槽来制造第一硅层（410）。 包层材料的折射率小于硅的折射率。 在第一硅层和包层材料的上部形成第二硅层（430）。 氧化物层（420）用作光波导的下包层。 通过使用体硅晶片的种子来生长锗层（440）以形成单晶。
-
公开(公告)号：KR1020130028563A
公开(公告)日：2013-03-19
申请号：KR1020110092203
申请日：2011-09-09
Applicant: 삼성전자주식회사
IPC: G02B6/293 , G02B6/12 , H04B10/2581 , H04Q11/00
CPC classification number: H04B10/25 , G02B6/107 , G02B6/12004 , G02B6/12007 , G02B6/14 , G02B6/29344 , G02B6/2938 , Y10T29/49 , H04B10/2581 , H04Q11/0005
Abstract: PURPOSE: An optical connecting device, a manufacturing method thereof, and a memory system containing the same are provided to output optical signals with a uniform size and to improve efficiency in design and fabrication by reducing the occupying space of an optical waveguide. CONSTITUTION: An optical connecting device(10) includes a main optical waveguide(MWG), N numbers of sub-optical waveguides(SWG1-SWGN), N numbers of mode couplers(15), and an optical wavelength filter(17). The main optical waveguide includes an input terminal(1) inputting multiplexed optical signals(OPT1) and an output terminal(2) outputting output optical signals. The N numbers of sub-optical waveguides are alternately arranged at both sides of the main optical waveguide, and output each optical signal, branching off from the main optical waveguide, to an output terminal(5). The N numbers of mode couplers perform mode coupling operations between the main optical waveguide and the N numbers of sub-optical waveguides. The optical wavelength filter is connected to the output terminal of the main optical waveguide and each output terminal of the N numbers of sub-optical waveguides.
Abstract translation: 目的：提供一种光学连接装置及其制造方法和包含该光学连接装置的存储系统以输出具有均匀尺寸的光信号，并且通过减少光波导的占据空间来提高设计和制造的效率。 构成：光连接装置（10）包括主光波导（MWG），N数个子光波导（SWG1-SWGN），N个模耦合器（15）和光波长滤波器（17）。 主光波导包括输入多路复用光信号（OPT1）的输入端（1）和输出输出光信号的输出端（2）。 N个子光波导交替地布置在主光波导的两侧，并将从主光波导分支的每个光信号输出到输出端（5）。 N个模拟耦合器在主光波导和N个子光波导之间执行模式耦合操作。 光波长滤波器连接到主光波导的输出端和N个子光波导的每个输出端。
-
Patent Agency Ranking
公开(公告)号：KR1020130008299A
公开(公告)日：2013-01-22
申请号：KR1020110068966
申请日：2011-07-12
Applicant: 삼성전자주식회사
IPC: H01L31/12
CPC classification number: G02B6/124 , G02B6/12002 , G02B6/12004 , G02B6/122
Abstract: PURPOSE: A semiconductor device is provided to reduce the area of a chip by arranging an electronic device and small optical devices in a lower layer of a substrate. CONSTITUTION: A first element layer(1L) is arranged on a substrate. The first element layer includes a lower optical element(120a). A second element layer(2L) is arranged on the first element layer. The second element layer includes an upper optical element(160a). A first insulation layer is arranged between the substrate and the first element layer.
Abstract translation: 目的：提供半导体器件以通过将电子器件和小型光学器件布置在衬底的下层中来减小芯片的面积。 构成：第一元件层（1L）布置在基板上。 第一元件层包括下部光学元件（120a）。 第二元件层（2L）布置在第一元件层上。 第二元件层包括上部光学元件（160a）。 第一绝缘层布置在基板和第一元件层之间。
-
-
公开(公告)号：KR101750742B1
公开(公告)日：2017-06-28
申请号：KR1020110105237
申请日：2011-10-14
Applicant: 삼성전자주식회사
IPC: H01L31/18 , G02B6/30 , G02B6/12 , H01L31/0232 , H01L31/103 , G02B6/132 , G02B6/136
CPC classification number: H01L31/02327 , G02B6/12004 , G02B6/132 , G02B6/136 , G02B6/30 , G02B6/305 , H01L31/103 , H01L31/1804 , H01L31/1808 , Y02E10/547 , Y02P70/521
Abstract: 본발명에따른광검출기구조체는내부에트렌치가형성되고상기트렌치내부에클래딩물질을채운제1 실리콘층; 상기제1 실리콘층및 상기클래딩물질의상부에형성된제2 실리콘층; 및상기제2 실리콘층의일측면이식각되어상기제2 실리콘층의측면에접속되고상기제1 실리콘층의상부에직접적으로접속하여단결정성장된게르마늄층을포함한다.
Abstract translation: 形成在其中填充有沟槽的内部包层材料的沟槽根据本发明的第一硅层的光学检测器结构; 在第一硅层和包层材料上形成的第二硅层; 并且具有单晶的锗层生长在第二硅层的一侧上并连接到第二硅层的一侧并直接连接到第一硅层的顶部。
-
公开(公告)号：KR1020140095678A
公开(公告)日：2014-08-04
申请号：KR1020130008328
申请日：2013-01-25
Applicant: 삼성전자주식회사
CPC classification number: G02B6/136 , G02B6/43 , H01L27/0617 , H01L27/10894 , H01L27/10897
Abstract: In a method for manufacturing a semiconductor apparatus, a gate structure is formed on a first region of a substrate including first and second areas and an etch barrier film structure is formed on a second region of the substrate. A first interlayer insulating film for covering the gate structure and the etch barrier film structure is formed on the substrate. The etch barrier film structure is exposed by removing a portion of the first interlayer insulating film. The substrate is exposed by removing the etch barrier film structure exposed. An optical device is formed on the exposed substrate.
Abstract translation: 在制造半导体装置的方法中，栅极结构形成在包括第一和第二区域的衬底的第一区域上，并且在衬底的第二区域上形成蚀刻阻挡膜结构。 在衬底上形成用于覆盖栅极结构和蚀刻阻挡膜结构的第一层间绝缘膜。 通过去除第一层间绝缘膜的一部分来暴露蚀刻阻挡膜结构。 通过去除暴露的蚀刻阻挡膜结构来暴露衬底。 在曝光的基板上形成光学器件。
-
公开(公告)号：KR1020140000856A
公开(公告)日：2014-01-06
申请号：KR1020120068377
申请日：2012-06-26
Applicant: 삼성전자주식회사
CPC classification number: G02B6/12 , G02B6/12004 , G02F1/2257 , G02F2001/212 , G02F2201/063 , G02F2201/066 , G02F2202/105
Abstract: An optical integrated circuit includes a substrate including a single crystalline semiconductor material, a passive device including a single crystalline semiconductor material and extended onto the substrate in the crystal direction of the substrate, and an active device including a single crystalline semiconductor material and extended onto the substrate in the crystal direction of the substrate. [Reference numerals] (AA,HH) First direction; (BB,GG) Second direction; (CC,FF) Third direction; (DD,EE) Fourth direction
Abstract translation: 光学集成电路包括：包括单晶半导体材料的衬底，包括单晶半导体材料的无源器件，并且在衬底的<100>晶体方向上延伸到衬底上，以及包括单晶半导体材料的有源器件和 在衬底的<110>晶体方向延伸到衬底上。 （标号）（AA，HH）第一方向; （BB，GG）第二方向; （CC，FF）第三方向; （DD，EE）第四方向
-
-
-
-
-
-
-
-
Search Results
9
records
(took 0.02 seconds)
