Abstract:
The invention concerns a manufacturing process of a photocathode for an image intensifier tube.According to this process, the photocathode is made within the tube by depositing a photoelectric material on a conductive substrate by vacuum evaporation. During this operation, the optical transparency of the deposit is checked by illumination of this deposit by a light source. According to the invention, this light source is located within the tube and is protected from the vapors of the photoelectric material. In the prior art, this light source was located outside the tube and the illumination of the deposit was not sufficient.The invention has applications in the field of image intensifier tubes.
Abstract:
In a photocathode comprising a substrate of tin oxide having thereon a photoemissive coating including antimony, a layer of antimony oxide is interposed between the tin oxide substrate and the photoemissive coating.
Abstract:
The present invention improves sensitivity of the ultraviolet band of a photoelectric surface. A photoelectric surface 1 includes a window material 2 that transmits ultraviolet rays, a conductive film 3 that is formed on the window material 2 and has conductivity, an intermediate film 4 that is formed on the conductive film 3 and is formed of MgF 2 , and a photoelectric conversion film 6 that is formed on the intermediate film 4 and is formed of CsTe. Since the photoelectric surface 1 includes the intermediate film 4 formed of MgF 2 , the sensitivity of the ultraviolet band is improved.
Abstract:
A cathode (5) for emitting photoelectrons or secondary electrons comprises a nickel electrode substrate (5c) with an aluminum layer (5b) deposited on it; an intermediate layer (5a) consisting of carbon nanotubes formed on the aluminum layer; and an alkaline metal layer (5d) formed on the intermediate layer (5a) and composed, for example, of particles of an alkali antimony compound that either emits photoelectrons in response to incident light or emits secondary electrons in response to incident electrons. The decrease in defect density of the particles reduces the probability of recombination of electron and hole remarkably, thus increasing quantum efficiency.