2.
    发明专利
    未知

    公开(公告)号:DE69324325T2

    公开(公告)日:1999-09-30

    申请号:DE69324325

    申请日:1993-10-05

    Abstract: A cathode for photoelectric emission or a cathode for secondary electron emission comprises a thin film made of a material which emits photoelectrons (4) by an incident light (3) or emits secondary electrons by an electron input on a base substrate and of which an average particle size is 200 nm to 2000 nm. It is preferred that the average particle size is nearly equal to an average diffusion length of the particle of excited electron. Further, the average particle size is preferably larger than the mean value of penetration lengths of inputted electrons or incident lights in the particles. Moreover, preferably convexities and/or concavities formed of particles each having the average particle size are formed on all over the surface of a plane of input for the light or electron. Further, it is preferred that the thin film is activated by an alkali metal and is made of compounds of at least one kind of an alkali metals and an antimony metal. Moreover, it is preferred that a layer having high reflectance against lights is inserted between the base substrate and the thin film. Thus, according to the cathode for photoelectric emission or the cathode for secondary electron emission, photoelectrons or secondary electrons are generated effectively and emitted from the cathode for photoelectric emission or the cathode for secondary electron emission.

    3.
    发明专利
    未知

    公开(公告)号:DE69324325D1

    公开(公告)日:1999-05-12

    申请号:DE69324325

    申请日:1993-10-05

    Abstract: A cathode for photoelectric emission or a cathode for secondary electron emission comprises a thin film made of a material which emits photoelectrons (4) by an incident light (3) or emits secondary electrons by an electron input on a base substrate and of which an average particle size is 200 nm to 2000 nm. It is preferred that the average particle size is nearly equal to an average diffusion length of the particle of excited electron. Further, the average particle size is preferably larger than the mean value of penetration lengths of inputted electrons or incident lights in the particles. Moreover, preferably convexities and/or concavities formed of particles each having the average particle size are formed on all over the surface of a plane of input for the light or electron. Further, it is preferred that the thin film is activated by an alkali metal and is made of compounds of at least one kind of an alkali metals and an antimony metal. Moreover, it is preferred that a layer having high reflectance against lights is inserted between the base substrate and the thin film. Thus, according to the cathode for photoelectric emission or the cathode for secondary electron emission, photoelectrons or secondary electrons are generated effectively and emitted from the cathode for photoelectric emission or the cathode for secondary electron emission.

    PHOTOELECTRON OR SECONDARY ELECTRON EMISSION CATHODE

    公开(公告)号:JPS60180052A

    公开(公告)日:1985-09-13

    申请号:JP3400784

    申请日:1984-02-24

    Abstract: PURPOSE:To devise improvement of electron emission efficiency by forming the electron emission cathode with a conductive substrate, an amorphous semiconductor film layer, an insulating material film layer, and an alkali metal salt layer formed by adsorption of the alkali metal salt on the insulating material film layer. CONSTITUTION:A photoelectron emission cathode is formed by providing an amorphous semiconductor layer 2 such as of silicon on a surface of a metal substrate 1, and further providing an insulating film layer 3 having a composition like silicon nitride on the surface of the layer 2, and furthermore providing an alkali metal layer 4 formed by adsorption of such as cesium on the surface of the layer 3. A phototube is formed by containing a mesh-like draw-out electrode 5 and an anode 6 together with the layered body obtained as above into a vacuum enclosure 8. Therefore, a large built-in electric field, in which tunnel effect is easily taken place and electrons are efficiently emitted, can be produced by a means to adhere an alkali metal of low ionization voltage and contact the metal to the semiconductor 2, a medium having a large dielectric constant, through the insulating film 3.

    PHOTOELECTRIC TUBE DEVICE
    6.
    发明专利

    公开(公告)号:JPS60158540A

    公开(公告)日:1985-08-19

    申请号:JP1401784

    申请日:1984-01-27

    Abstract: PURPOSE:To obtain a high multiplication factor and obtain a device applicable to the other photo arithmetic unit, etc. by connecting the fluorescent screen and the photoelectric screen of a photoelectric tube with an optical passage. CONSTITUTION:The radiated light at the (q) point of a fluorescent screen 3 excited by photoelectrons discharged by the incident light at the (p) point of a photoelectric screen 2 is arrested by the lower-end surface of an optical fiber 7a. It is then returned to the photoelectric screen adjacent to the P point of the photoelectric screen 2 via the optical fiber 7a to generate photoelectrons again. Optical fibers 7b, 7c-7n likewise return the radiated light of the fluorescent screen, and photoelectrons from the photoelectric screen 2 generated by the light from the optical fiber 7n are arrested by an anode 11 and extracted via an extracting line 11a. If a glass tube wall forming the photoelectric screen 2 and fluorescent screen 3 is made of fiber plate, a specific position on the opposite photoelectric screen 2 and fluorescent screen 3 can be correctly specified optically.

    CATHODE FOR EMISSION OF PHOTOELECTRONS OR SECONDARY ELECTRONS

    公开(公告)号:JPS62232831A

    公开(公告)日:1987-10-13

    申请号:JP7517186

    申请日:1986-04-01

    Abstract: PURPOSE:To effectively reduce the reflectance of a surface so as to improve the efficiency of emission of electrons therefrom by providing small projections and recesses on the surface to which light or primary electrons are projected, and making the width of each of the projections nearly equal to the length of diffusion. CONSTITUTION:The light incidence surface of a semiconductor crystal wafer (GaAs) is provided with numerous grooves whose width and depth are about 3mum each. The width of the top of the wafer portion between the grooves is 1mum. Rays, which obliquely proceed to photoelectron emission cathode, are classified into 1a which proceed to the top 6a and those 1b which proceed to the side surface 6b or the bottom 6c. The rays 1b which proceed to the side surface 6b are divided into those 3 which enter into the cathode 5, and those 2 which are reflected from the side surface. The rays 3 having entered into the cathode 5 stimulate electrons 4a and 4b in the cathode. The reflected rays 2 proceed to the bottom 6c of the groove so that some of the rays 2 act to emit photoelectrons, and the others reflected from the bottom 6c proceed again to another side surface 6e. A portion, which would cause the quantum efficiency to fall, is coused to contribute to emission of electrons to enhance the quantum efficiency.

    SAMPLE HOLDING DEVICE
    8.
    发明专利

    公开(公告)号:JPS60165031A

    公开(公告)日:1985-08-28

    申请号:JP2044984

    申请日:1984-02-07

    Abstract: PURPOSE:To make to accord the sample surface with an analytical point at a right angle by so constituting the captioned device as to bind the sample surface with the reference surface while pressing the sample back side with a sample back pressing member. CONSTITUTION:The reference surface plate 10 is connected to the stand 6 through the columnar tubes 11 and 12 for being fixed with the screws 13 and 14 so that the reference surface may have a fixed distance from the stand 6. The back pressing plate 15 is pushed down opposing to the compression springs 16 and 17 for forming a considerable space between the reference surface of the reference surface plate 10 and the surface of the back pressing plate 15 while relieving the back pressing plate 15 by inserting a sample 1. The back pressing plate 15 pushes the back of the sample 1 for pushing the surface of the sample 1 against the reference surface. By rotating a rotary stand 6, the center of the exposed sample surface can be made to be an analytical point.

    PHOTOCATHODE
    9.
    发明专利

    公开(公告)号:JP2001319565A

    公开(公告)日:2001-11-16

    申请号:JP2000138775

    申请日:2000-05-11

    Abstract: PROBLEM TO BE SOLVED: To provide a photocathode capable of easily and effectively improving quantum efficiency on a photoelectric face. SOLUTION: The photocathode comprises a ferroelectric substrate 12 and a photoelectric face 11 formed on the ferroelectric substrate 12. This also specifies that the vicinity of the interface between the ferroelectric substrate 12 and the photoelectric face 11 becomes a negative potential by polarizing the ferroelectric substrate 12 so that the photoelectric face side of the ferroelectric substrate 12 be a negative pole. As the result, potential inclination can be easily and effectively formed inside the photoelectric face. Also, the photoelectron excited inside the photoelectric face is at a position to easily go in the direction of the emitting face to improved the quantum efficiency.

    CATHODE FOR PHOTOELECTRON OR SECONDARY ELECTRON EMISSION, PHOTOMULTIPLIER TUBE AND ELECTRONMULTIPLIER TUBE

    公开(公告)号:JP2001202873A

    公开(公告)日:2001-07-27

    申请号:JP2000007972

    申请日:2000-01-17

    Abstract: PROBLEM TO BE SOLVED: To provide a cathode for photoelectron or secondary electron emission in which quantum efficiency, more particularly red color sensitivity can be improved and the spectrophoto sensitivity or secondary electron emission property can be improved. SOLUTION: In cathode 5 for photoelectron emission, a photoelectron surface 5d formed from materials such as alkali antimony compound which discharges photoelectrons by incident of light or secondary electrons by incident of electrons is provided on Ni electrode substrate 5c in which Al layer 5b is vapor deposited. An intermediate layer 5a formed from carbon nano tube is disposed between the photoelectron surface 5d and the Ni electrode substrate 5c. Therefore, defect density inside of particles is lowered and recombination ration of electron and positive hole is remarkably lowered to improve quantum efficiency.

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