公开(公告)号：GB1390425A

公开(公告)日：1975-04-09

申请号：GB2590872

申请日：1972-06-02

Applicant: PHILIPS ELECTRONIC ASSOCIATED

IPC: H01J37/24 ,  H04N5/63 ,  H01J3/08

Abstract: 1390425 Electron beam apparatus PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 2 June 1972 [5 June 1971] 25908/72 Heading H1D An electron beam apparatus, such as an electron microscope or an electron beam machining apparatus, has a screen 17 which intercepts part of the beam and which forms part of a filament current control unit 15 of a cathode 12 which has a control electrode 11. The screen 17 can be an apertured electrode in which case the signal path 16 is electrical, or the screen can be a phosphor in which case the signal path 16 will be optical and later converted to electrical. The voltage between the control electrode 11 and the cathode 12 is varied either by adjusting a bias resistor Fig. 2 (not shown) or superimposing an alternating voltage Fig. 3 (not shown) and the filament current is adjusted so that maximum in the curve of beam current density against control electrode-cathode potential difference coincides with the actual operating potential difference, the maximum being detected by, e.g. a phase sensitive detector. It is stated that the filament temperature will then be optimized.

公开(公告)号：NL7107749A

公开(公告)日：1972-12-07

申请号：NL7107749

申请日：1971-06-05

IPC: H01J37/24 ,  H04N5/63 ,  H01J3/08

公开(公告)号：CH485316A

公开(公告)日：1970-01-31

申请号：CH1802167

申请日：1967-12-20

Applicant: IBM

Inventor： ROBERT RUSSELL BARBER ,  KARL HEINZ LOEFFLER

IPC: G11B7/09 ,  G11C13/04 ,  H01J29/52 ,  H01J29/82 ,  H01J37/04 ,  H01J37/09 ,  H01J37/21 ,  H01J37/244 ,  H01J37/304 ,  H01J3/08 ,  H01J29/56

公开(公告)号：NL6903691A

公开(公告)日：1969-09-15

申请号：NL6903691

申请日：1969-03-10

IPC: H01J17/06 ,  H01J37/077 ,  H01J29/48 ,  H01J3/08 ,  H01J19/24

公开(公告)号：WO2015042360A1

公开(公告)日：2015-03-26

申请号：PCT/US2014/056494

申请日：2014-09-19

Applicant: PRONOVA SOLUTIONS, LLC

Inventor： ANFEROV, Vladimir

IPC: H01J3/08

CPC classification number: A61N5/1077 ,  A61N2005/1087 ,  H05H7/001 ,  H05H2007/002 ,  H05H2007/004 ,  H05H2007/048

Abstract: Systems and methods of controlling a proton beam in a proton therapy system, the system including a proton beam delivery system including at least one achromatic beamline having a first power setting to direct a proton beam having a first predetermined range of proton beam energies to a target treatment area, and a second power setting to direct a proton beam having a second predetermined range of proton beam energies to the target treatment area, and a power changing unit configured to control an energy level of the proton beam and a power setting of the at least one achromatic beamline such that the power changing unit changes the power setting of the at least one achromatic beamline between the first power setting and the second power setting based on changes in proton beam energy that occur within the first predetermined range of proton beam energies.

Abstract translation: 在质子治疗系统中控制质子束的系统和方法，该系统包括质子束传递系统，其包括至少一个具有第一功率设置的消色差束线，以将具有第一预定范围的质子束能量的质子束引导至靶 以及第二功率设定，以将具有第二预定范围的质子束能量的质子束引导到所述目标处理区域;以及功率改变单元，被配置为控制所述质子束的能级和所述质子束的功率设定 至少一个消色差束线，使得功率改变单元基于在质子束能量的第一预定范围内发生的质子束能量的变化，改变第一功率设定和第二功率设置之间的至少一个消色差束线的功率设置。

公开(公告)号：WO2013175517A1

公开(公告)日：2013-11-28

申请号：PCT/IT2013/000143

申请日：2013-05-22

Applicant: SORDINA S.P.A.

Inventor： FELICI, Giuseppe ,  IACOBONI, Vincenzo ,  CICCOTELLI, Alessia ,  DE ANGELIS, Fabio

IPC: A61N5/10 ,  H01J3/08

CPC classification number: A61N5/1071 ,  A61N5/1067 ,  A61N5/1077 ,  A61N2005/1089

Abstract: A radiation dose control device for controlling an electron beam pulse delivered during a therapy session of IORT (Intra-Operative Radiation Therapy), comprising a PWM system configured to provide an electron injection at a DC voltage at each pulse of an input electron beam (FE) sent to the input of an electronic gun (G) of a linear accelerator or linac (AL), so that the output electron beam (FU) exiting said linac (AL) is highly stable, and so that a variation of the radiation dose of said output electron beam (FU) results only from the variation of the delivery time of said input electron beam (FE); said dose variation of the output electron beam (FU) is thus directly proportional to said delivery time of the input electron beam (FE).

Abstract translation: 一种用于控制在IORT（操作内辐射治疗）的治疗期间期间传送的电子束脉冲的辐射剂量控制装置，包括被配置为在输入电子束（FE）的每个脉冲处以DC电压提供电子注入的PWM系统 ）发送到线性加速器或直线加速器（AL）的电子枪（G）的输入，使得离开所述直线加速器（AL）的输出电子束（FU）是高度稳定的，并且使得辐射剂量的变化 的所述输出电子束（FU）的结果仅来自所述输入电子束（FE）的传送时间的变化; 所述输出电子束（FU）的所述剂量变化因此与输入电子束（FE）的所述传送时间成正比。

公开(公告)号：WO2013046107A1

公开(公告)日：2013-04-04

申请号：PCT/IB2012/055055

申请日：2012-09-23

Applicant: ELBIT SYSTEMS LTD. ,  SCHNEIDER, Ron ,  ZOHAR, Eyal

Inventor： SCHNEIDER, Ron ,  ZOHAR, Eyal

IPC: H01J3/08

CPC classification number: G02B26/08 ,  G01S7/4816 ,  G01S17/107 ,  G01S17/89 ,  G02B26/0833

Abstract: A device for image gating using an array of reflective elements is provided herein. The device includes an array of reflective elements, wherein each one of the reflective elements is movable within a range of a plurality of tilt positions, wherein the array is located at an image plane of the device, wherein the array is perpendicular to an optical axis of the device. The device further includes a control unit configured to control the reflective elements such that in at least some of the tilt positions, the reflective elements reflect the radiant flux at said image plane, to one or more projection planes. A gradual rotation of the reflective elements along the plurality of tilt positions result in a gradual increase or decrease in the intensity of the image reflected from the array of reflective elements while maintaining the image integrity.

Abstract translation: 本文提供了一种使用反射元件阵列进行图像门控的装置。 该装置包括反射元件阵列，其中每个反射元件可在多个倾斜位置的范围内移动，其中阵列位于该装置的像平面处，其中该阵列垂直于光轴 的设备。 该装置还包括控制单元，该控制单元被配置为控制反射元件，使得在至少一些倾斜位置中，反射元件将所述图像平面处的辐射通量反射到一个或多个投影平面。 反射元件沿着多个倾斜位置的逐渐旋转导致从反射元件阵列反射的图像的强度逐渐增加或降低，同时保持图像完整性。

公开(公告)号：WO2006026462A1

公开(公告)日：2006-03-09

申请号：PCT/US2005/030469

申请日：2005-08-26

Applicant: RAIN BIRD CORPORATION ,  NEITZEL, Roger, S. ,  VENEGAS, Ken, R.

Inventor： NEITZEL, Roger, S. ,  VENEGAS, Ken, R.

IPC: H01J3/08 ,  H02G3/08

CPC classification number: H02G3/085

Abstract: Molded enclosures including integrally formed knockouts are described herein. In one implementation, a molded enclosure comprising a wall (200) having a wall thickness (210) and a first knockout (302) integrally formed in the wall. At least a portion of a periphery of the first knockout is defined by at least one attachment tab (304) formed at a portion of the periphery of the first knockout and at least one space (306) is formed at the periphery of the first knockout separating a portion of the wall from a portion of the first knockout, the at least one attachment tab joining the first knockout to the wall. Upon removal of the first knockout from the wall, a first opening is defined in the wall.

Abstract translation: 本文描述了包括整体形成的敲除的模制外壳。 在一个实施方式中，一种模制外壳包括一个具有壁厚（210）的壁（200）和一体地形成在壁上的第一敲除（302）。 第一敲除器的周边的至少一部分由形成在第一敲除部的周边的一部分处的至少一个附接突片（304）限定，并且至少一个空间（306）形成在第一敲除器的周边 将所述壁的一部分与所述第一敲除部分的一部分分离，所述至少一个附接突片将所述第一敲除物连接到所述壁。 在从壁上移除第一敲除部分时，壁中限定有第一开口。

公开(公告)号：JP2002163998A

公开(公告)日：2002-06-07

申请号：JP2001237471

申请日：2001-08-06

Applicant: SEIKO EPSON CORP

Inventor： KOMATSU HIROSHI

IPC: H01J9/02 ,  H01J1/304 ,  H01J1/46 ,  H01J1/52 ,  H01J3/08 ,  H01J3/40 ,  H01J19/24 ,  H01J19/38 ,  H01J19/40 ,  H01J21/10 ,  H01J29/04 ,  H03F3/02

Abstract: PROBLEM TO BE SOLVED: To provide a driving method of a multipole electric field electron emitting device whose input resistance is large, transfer characteristic is linear, and which is suited for application of a power amplifier or the like of having a large mutual conductance, and having a less gate invalid current. SOLUTION: This has at least a cathode electrode to discharge electrons by an electric field effect, a gate electrode to apply an electric field to the cathode electrode, an anode electrode to which discharged electrons are made to be collected, and a control electrode installed between the cathode electrode and the anode electrode and controlled of the discharged electrons, and the gate electrode is grounded, a cathode voltage of a negative electric potential is applied to the cathode electrode, an anode voltage of a positive electric potential is applied to the anode electrode, and an input signal voltage is applied to the control electrode to control an anode current.

公开(公告)号：JP2002134000A

公开(公告)日：2002-05-10

申请号：JP2001268212

申请日：2001-09-05

Applicant: SEIKO EPSON CORP

Inventor： KOMATSU HIROSHI

IPC: H01J3/08 ,  H01J1/304 ,  H01J9/02 ,  H01J19/24 ,  H01J21/10 ,  H01J29/04

Abstract: PROBLEM TO BE SOLVED: To provide an electron emitting device having a low gate reactive current which can be preferably used for a power amplifier having a high input resistance, a linear transfer characteristic and a high mutual conductance. SOLUTION: The electron emitting device has a first substrate and a second substrate positioned face to face, an electron emitting part formed on the first substrate, a first electrode positioned higher than the first substrate so that the first electrode and the first substrate face each other sandwiching the electron emitting part in a cross sectional view, and a second electrode positioned higher than the first electrode so that the second electrode and the first electrode face each other sandwiching the electron emitting part in a horizontal view. The electron emitting device is characterized in that when a voltage is applied to the first electrode, the electron emitting part emits electron vertically to the first substrate and the electron reaches the second substrate. It is another character of the electron emitter that the amount of electron reaching the second substrate is controlled by the second electrode. The electron emitting device is further characterized in that the second substrate has a third electrode facing the electron emitting part.