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    SEMICONDUCTOR DEVICE WITH HEAT REMOVAL STRUCTURE AND RELATED PRODUCTION METHOD
    82.
    发明申请
    SEMICONDUCTOR DEVICE WITH HEAT REMOVAL STRUCTURE AND RELATED PRODUCTION METHOD 有权
    具有热去除结构和相关生产方法的半导体器件

    公开(公告)号：US20130270578A1

    公开(公告)日：2013-10-17

    申请号：US13864353

    申请日：2013-04-17

    Applicant: FORSCHUNGSVERBUND BERLIN E.V.

    Inventor： Tomas KRÄMER

    IPC: H01L23/373 ,  H01L21/48

    CPC classification number: H01L23/3738 ,  H01L21/4871 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/373 ,  H01L23/3732 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: According to the invention, a semiconductor device composite structure is provided which comprises an initial substrate with discreet, integrated devices and a heat removal structure. The heat removal structure comprises: a bond layer which is attached to the initial substrate or the devices, a heat removal structure which is attached on the bond layer and which consists of a material with a specific thermal conductivity which is at least double the level of the average specific heat conductivity of the initial substrate or the devices, and one or more metallic thermal bridges which thermally connect the devices with the heat removal structure via the bond layer. The thermal bridges are designed as vertical through connections (vias) through the bond and heat removal structure. The invention furthermore relates to an associated production method.

    Abstract translation: 根据本发明，提供一种半导体器件复合结构，其包括具有谨慎的集成器件的初始衬底和散热结构。 除热结构包括：附接到初始衬底或器件的接合层，附着在接合层上的散热结构，其由比导热系数的至少两倍的材料组成 初始衬底或器件的平均比热导率以及通过接合层将器件与散热结构热连接的一个或多个金属热桥。 热桥通过焊接和散热结构设计为垂直通孔连接（通孔）。 本发明还涉及相关的生产方法。

    DEVICE AND METHOD FOR GENERATING A PLASMA
    83.
    发明申请
    DEVICE AND METHOD FOR GENERATING A PLASMA 有权
    用于产生等离子体的装置和方法

    公开(公告)号：US20130249398A1

    公开(公告)日：2013-09-26

    申请号：US13847523

    申请日：2013-03-20

    Applicant: FORSCHUNGSVERBUND BERLIN E.V.

    Inventor： Silvio Kühn

    IPC: H05H1/46

    CPC classification number: H05H1/46 ,  H05H2001/4682

    Abstract: A device (200) for generating a plasma that comprises a plasma source (241) designed as a hollow space and a resonator (201) that includes a waveguide (211, 212, 2131) and the plasma source (241), wherein the waveguide (212, 213) is operatively connected with the plasma source (241); the device further comprising a first coupling means (231) for energy introduction (251) and a second coupling means (232) for energy extraction (252), wherein each coupling means (231, 232) is in an energy- and signal-carrying (251, 252) operative connection with the waveguide; the device further comprising an active element (261) for energy supply to the resonator (201), operatively connected with the first (231) and the second (232) coupling means, wherein the plasma source (241) is at least partially integrated into a section of the waveguide (211, 212, 213) that extends between the first coupling means (231) and the second coupling means (232).

    Abstract translation: 一种用于产生包括设计为中空空间的等离子体源（241）和包括波导（211,212,2131）和等离子体源（241）的谐振器（201）的等离子体的装置（200），其中所述波导 （212,213）与等离子体源（241）可操作地连接; 所述装置还包括用于能量引入的第一耦合装置（231）和用于能量提取的第二耦合装置（232），其中每个耦合装置（231,232）处于能量和信号载体 （251,252）与所述波导的操作连接; 该装置还包括用于向谐振器（201）供能的有源元件（261），其与第一（231）和第二（232）耦合装置可操作地连接，其中等离子体源（241）至少部分地集成到 在第一耦合装置（231）和第二耦合装置（232）之间延伸的波导部分（211,212,213）。

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