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81.发明公开
公开(公告)号：EP0785998A1
公开(公告)日：1997-07-30
申请号：EP94930172.0
申请日：1994-10-14
Applicant: FOUNDATION FOR RESEARCH AND TECHNOLOGY HELLAS (FO.R.T.H.) INSTITUTE OF MOLECULAR BIOLOGY & BIOTECHNOLOGY , DKFZ DEUTSCHES KREBSFORSCHUNGSZENTRUM STIFTUNG DES ÖFFENTLICHEN RECHTS
Inventor： TABLER, Martin , SCZAKIEL, Georg , HOMANN, Matthias
CPC classification number: C12N15/113 , A61K38/00 , C12N2310/111 , C12N2310/121
Abstract: Nucleotide sequences are described which can be used for target RNA-specific construction of asymmetric hammerhead ribozymes having high catalytic activity. Further, methods for the production of these asymmetric ribozymes and DNA sequences encoding them as well as compositions containing such ribozymes or DNA sequences are described.
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公开(公告)号：EP0698886A3
公开(公告)日：1996-07-10
申请号：EP95410074.9
申请日：1995-07-27
IPC: G11C7/00
CPC classification number: G11C7/1039
Abstract: The invention relates to a pipeline buffer for simultaneously transferring N words at each of a succession of clock cycles (CK), comprising N one-word wide memories (M0-M3) successively connected such that each memory is accessed like the preceding memory with one clock cycle delay, whereby the N memories are consecutively subjected to a same read or write access and each memory is subjected to consecutive different read or write accesses.
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83.发明公开
公开(公告)号：EP4531786A1
公开(公告)日：2025-04-09
申请号：EP22743463.6
申请日：2022-06-30
Inventor： SAKKALIS, Vangelis , KRANA, Myrto , FARMAKI, Cristina , PEDIADITIS, Matthaios
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84.发明公开
公开(公告)号：EP3759529A1
公开(公告)日：2021-01-06
申请号：EP18716330.8
申请日：2018-02-28
Inventor： STRATAKIS, Emmanouil , SKOULAS, Evangelos , PAPADOPOULOS, Antonios
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公开(公告)号：EP3198810B1
公开(公告)日：2019-01-30
申请号：EP15781304.9
申请日：2015-09-24
Inventor： KATEVENIS, Manolis G H
IPC: H04L12/801 , H04L12/825 , H04L12/867
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Patent Agency Ranking
公开(公告)号：EP3317656A1
公开(公告)日：2018-05-09
申请号：EP16734648.5
申请日：2016-07-01
Inventor： PAPADAKIS, George , GIZELI, Electra
IPC: G01N29/02 , G01N29/032 , C12Q1/68 , G01N29/036 , G01N33/543
CPC classification number: G01N29/022 , C12Q1/6825 , C12Q2565/634 , G01N29/032 , G01N29/036 , G01N33/54373 , G01N33/586 , G01N2291/0255 , G01N2291/0256 , G01N2291/0257 , G01N2291/0426 , C12Q2525/197
Abstract: A sensitive assay for an analyte employing an acoustic wave sensor. A label which has a higher dissipative capacity than the analyte is adhered to the sensing surface of an acoustic wave sensor through the analyte such that the body of the label is spaced apart from and anchored to the surface of the acoustic wave sensor by a distance of 15 to 250 nm. The change in the energy losses of the acoustic wave when the label binds to the sensing surface is used to measure the presence or amount of the label. A substantial improvement in the detection limit of the label is obtained. The analyte may for example be a nucleic acid and the label may for example comprise liposomes.
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87.发明公开
公开(公告)号：EP1461146A2
公开(公告)日：2004-09-29
申请号：EP02791868.9
申请日：2002-12-24
Inventor： FOTAKIS, Costas , THIREOS, George , ZERGIOTI, Ioanna , KAFETZOPOULOS, Dimitris;
IPC: B01J19/00
CPC classification number: B82Y30/00 , B01J19/0046 , B01J2219/00441 , B01J2219/00527 , B01J2219/00529 , B01J2219/0059 , B01J2219/00596 , B01J2219/00605 , B01J2219/00608 , B01J2219/0061 , B01J2219/00612 , B01J2219/00637 , B01J2219/00641 , B01J2219/00644 , B01J2219/00659 , B01J2219/00711 , B01J2219/0072 , B01J2219/00722 , B01J2219/00725 , B01J2219/00727 , B01J2219/0074 , B41J2/04515 , B41J2/04573 , B41J2/04581 , B41J2/04588 , C40B40/06 , C40B40/10 , C40B60/14
Abstract: A method and an apparatus for microfabricating precision patterns of biopolymers onto solid substrates by means of laser transfer are disclosed. The method involves the use of ultrafast laser pulses for transferring target biopolymer material, dimensioned according to the focal spot of the laser, from one surface of a transparent support onto the opposite positioned surface of receiving substrate. Repeating the transfer process at different target and substrate positions results in the production of extended patterns such as arrays of features or localized coatings. The apparatus is designed to produce the patters of biopolymers on solid substrates in an automated fashion. The method and the apparatus are of particular utility in producing devices for biological and biochemical assay systems such as biosensors and microarrays.
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88.发明公开A method and device for cleaning surfaces using temporarily coincidental laser pulses of two different wavelengths 审中-公开由两种不同波长的暂时同时激光脉冲的方法和装置用于清洁表面
公开(公告)号：EP1340556A2
公开(公告)日：2003-09-03
申请号：EP03386004.0
申请日：2003-03-03
Applicant: Foundation for Research and Technology-Hellas (FO.R.T.H.), Institute of Electronic Structure and Laser , Zafiropulos, Vassilis
Inventor： Zafiropulos, Vassilis , Pouli, Paraskevi , Eglezis, Apostolis , Petrakis, Aristides
CPC classification number: G21F9/005 , A61B18/20 , B08B7/0042 , B23K26/0604 , B23K26/0613 , B23K26/0622 , B23K26/067 , C04B41/0036 , C04B41/009 , C04B41/80 , E04G23/002 , C04B41/53 , C04B33/00 , C04B14/28 , C04B14/285
Abstract: The present invention relates to a method and a device for removal of any kind of superficial encrustation from surfaces, by the synchronous use of the fundamental and one of the harmonic frequencies of a short-pulse laser system (in the order of 1- 40 ns). This is embodied by temporal and spatial overlapping of the two beams in various ratios of energy density values between them. The present invention relates to a problem of major concern, related to the cleaning of stone-sculpted surfaces of historic and/or artistic value without any alteration to the underlying authentic surfaces. The invention can be employed in other materials such as façades, metallic surfaces, glass, paper, wood etc. as well as in other applications of industrial or medical interest, such as the removal of radioactive residues from any type of surfaces or the removal of deposits from any kind of animal tissues. The success of this method is based on the combined action of two discrete mechanisms for the removal of surface deposits, embodied by the use of laser pulses of two different wavelengths simultaneously. The suggested device is based on the spatial and temporal overlapping of the fundamental frequency with one of its harmonics, as well as the possibility to adjust the energy of each one of the two radiations individually.
Abstract translation: 本发明涉及一种方法和用于去除任何种类的从表面浅表结壳的装置，通过所述同步使用的基本的和短脉冲激光系统的谐波频率中的一个（在1- 40纳秒量级 ）。 这是通过在它们之间的能量密度值的各种比例的两个光束的时间和空间重叠的构造。 本发明涉及重大关切的问题，涉及到的历史和/或艺术价值的石头雕刻的表面清洁，没有任何改动底层的真实面。 如幕墙，金属表面，玻璃，纸，木材等，以及在工业或医疗感兴趣的其他应用程序，：如从任何类型的表面的除去放射性残基或去除：本发明可在其他材料中使用 从任何一种动物组织存款。 这种方法的成功是基于两个分立机制用于移除表面沉积物的，通过使用同时两种不同波长的激光脉冲的具体的组合作用。 所建议的装置是基于所述基本频率的空间和时间重叠与其谐波中的一个，以及调整独立两个辐射中的每一个的能量的可能性。
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89.发明公开Procedure for the wafer scale integration of gallium arsenide based optoelectronic devices with silicon based integrated circuits 审中-公开GaAs基的集成电路，一种用于盘大小上集成光电子器件的方法与基于硅
公开(公告)号：EP1130647A2
公开(公告)日：2001-09-05
申请号：EP01600004.4
申请日：2001-02-28
Applicant: Halkias, George , Tsoukalas, Dimitrios , Georgakilas, Alexandros , Foundation for Research and Technology-Hellas (FO.R.T.H.), Institute of Electronic Structure and Laser , National Center for Scientific Research "Demokritos"/Institute of Microelectronics (NCSR "Demokritos"/Inst. of Microelec.)
Inventor： Georgakilas, Alexandros , Halkias, George , Tsoukalas, Dimitris
IPC: H01L25/16
CPC classification number: H01L31/0304 , H01L21/8258 , H01L31/0368 , H01L31/1852 , Y02E10/544
Abstract: An integrated fabrication procedure of optoelectronic (OE) system, comprising light-emitting diodes (Lasers or LEDs) as well as photodetectors fabricated with III-V compound semiconductor epitaxial layers deposited on a crystalline wafer bonded on a Silicon wafer on which the CMOS/BiCMOS integrated circuits have been fabricated, characterized in that the bonding of the wafer containing the III-V epitaxial layers with the Silicon wafer is achieved either with an adhesive epoxy or with a Wafer Bonding procedure through the employment of an intermediate layer of SOG, SiO 2 or Si 3 N 4 (or a combination of them); the intermediate layers are deposited at low temperature (below 450°C) and the bonding is accomplished at even lower temperature (below 250°C). The invention is characterized in that the integration of the microelectronic with the optoelectronic components is achieved in a three-dimensional arrangement using a wafer scale fabrication procedure.
Abstract translation: 光电（OE）系统的集成制造程序，其包括发光二极管（激光或LED），以及与沉积键合的硅晶片上的结晶晶片上的III-V族化合物半导体外延层制造的光电检测器在其上CMOS / BiCMOS工艺 集成电路已经被制造，dadurch gekennzeichnet，DASS死晶片包含在III-V外延层与所述硅晶片的接合，实现无论是用在粘合剂环氧树脂或通过就业SOG，SiO 2构成的中间层的晶片键合过程 或Si 3 N 4（或它们的组合）; 所述中间层在低温下沉积（低于450℃）和接合在甚至更低的温度下完成（低于250℃）。 在没有与所述光电元件的微电子的积分使用晶片级制造过程中的三维布置实现本发明的特征。
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90.发明公开
公开(公告)号：EP4555272A1
公开(公告)日：2025-05-21
申请号：EP23800947.6
申请日：2023-10-02
Inventor： ZAMPOULIS, Xenofon , STAVROULAKIS, Petros Ioannis
IPC: G01B11/24
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