INTEGRATED CIRCUIT PACKAGE WITH WARPAGE CONTROL USING CAVITY FORMED IN LAMINATED SUBSTRATE BELOW THE INTEGRATED CIRCUIT DIE

    公开(公告)号:EP4135022A3

    公开(公告)日:2023-02-22

    申请号:EP22188832.4

    申请日:2022-08-04

    Inventor: DUCA, Roseanne

    Abstract: A support substrate includes an insulating core layer, an electrically conductive layer over the insulating core layer and a solder mask layer over the electrically conductive layer. A back side of an integrated circuit chip is mounted to an upper surface of the support substrate at a die attach location. The upper surface of the support substrate includes a cavity located within the die attach location, where the cavity extends under the back side of the integrated circuit chip. The cavity is defined by an area where the solder mask layer and at least a portion of the electrically conductive layer have been removed. Bonding wires connect connection pads on a front side of the integrated circuit chip to connection pad on the upper surface of the support substrate.

    INTEGRATED CIRCUIT PACKAGE WITH WARPAGE CONTROL USING CAVITY FORMED IN LAMINATED SUBSTRATE BELOW THE INTEGRATED CIRCUIT DIE

    公开(公告)号:EP4135022A2

    公开(公告)日:2023-02-15

    申请号:EP22188832.4

    申请日:2022-08-04

    Inventor: DUCA, Roseanne

    Abstract: A support substrate includes an insulating core layer, an electrically conductive layer over the insulating core layer and a solder mask layer over the electrically conductive layer. A back side of an integrated circuit chip is mounted to an upper surface of the support substrate at a die attach location. The upper surface of the support substrate includes a cavity located within the die attach location, where the cavity extends under the back side of the integrated circuit chip. The cavity is defined by an area where the solder mask layer and at least a portion of the electrically conductive layer have been removed. Bonding wires connect connection pads on a front side of the integrated circuit chip to connection pad on the upper surface of the support substrate.

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