Abstract:
PURPOSE: A memory system and a programming method thereof are provided to reduce a coupling effect by modulating data to be programmed. CONSTITUTION: A nonvolatile memory device(120) stores modulation data inputted from a memory controller(140) in a writing operation. A page(123) includes a user data area(1231) and a spare area(1232). The user data area stores modulation data. The spare area stores information related to the modulation of the data. An input and output circuit(124) temporarily stores the modulation data inputted in the writing operation in a corresponding page for programming.
Abstract:
PURPOSE: A storing apparatus and a reading method of the same are provided to optimize a reading operation by setting a reading level based on a filtered distribution of the reading operation. CONSTITUTION: A storing unit(12) stores data. An error controlling unit(14) corrects the errors of data read from the strong unit based on at least one reading level. The error controlling unit outputs a error correcting failure signal(ECF). A reading level controlling unit(16) responds to the error correcting failure signal and sets a new reading level. The reading level controlling unit includes a filter(17) in order to filter the measured distribution of memory cells from the storing unit.
Abstract:
PURPOSE: A method for setting a read voltage is provided to minimize the number of a bit in which an error is generated by compensating an offset. CONSTITUTION: A first voltage distribution corresponds to a first voltage-state. A second voltage distribution corresponds to a second voltage state. A read error probability value use a read voltage as a variable. The read error probability value is calculated based on the first and second voltage distribution and control the read voltage to be minimum.
Abstract:
PURPOSE: A data processing system having concatenated coding and decoding structure is provided to improve the reliability characteristic of the data processing system through an effective concatenation way of inner encoders and outer encoders. CONSTITUTION: A memory channel(200) stores data. A concatenated encoder(100) encodes the data, data that will be transmitted to the memory channel. The encoder comprises an outer encoder(120) and an inner encoder(140). The outer encoder generates outer codewords by encoding the data that will be transmitted to the memory channel. The inner encoder generates a plurality of inner codewords by encoding the outer codewords.
Abstract:
PURPOSE: A data storage device and a data storage system with the same are provided to increasing randomness by selectively randomizing input data. CONSTITUTION: A controller(20) decides characteristics of first input data. The controller outputs a first control signal based on the decided input data of the first input data. A randomizer(10) selectively randomizes the first input data in response to the first control signal outputted from the controller. An error correction encoder(50) generates the first input data by encoding second input data to error correction codes. A de-randomizer(30) performs reverse randomization of read data which is read in response to a read command from a host.
Abstract:
PURPOSE: A memory device and a memory data error detection method for managing the error of data stored in the memory device are provided to achieve SSD(Solid State Drive/Disk) using non-volatile memory. CONSTITUTION: A memory device(900) includes a memory cell array, a reading unit, an error correction unit and a programming unit. The memory cell array includes memory cells. The reading unit reads data from memory cells. The forward error correction unit detects the erroneous bit of data. The forward error correction unit distinguishes the memory cell in which the bit detected among memory cells is stored.
Abstract:
PURPOSE: An encoding and decoding method of multi bit level data is provided to reduce a bit error in decoding failure by using a bit - symbol mapping table having a gray code or a bit - symbol mapping table. CONSTITUTION: In an encoding and decoding method of multi bit level data, a controller receives a transmission symbol from a transmitting end(S10). A controller detects a range of the error pattern based on a table including an error pattern of a transmission symbol and transmission symbol(S12). A controller encodes at least one of a plurality of multi-bit levels corresponding to the transmission symbol based on the range of the error pattern(S14). The controller detects at least one transmission candidate symbol corresponding to the receiving symbol. The controller detects at least one transmission candidate symbol corresponding to the receiving symbol based on a table including the transmission candidate symbol.
Abstract:
A multi-path accessible semiconductor memory device having mail box regions and a method of controlling mail box access are provided to share a data input/output path, transmit a message through an additional message input/output line and minimize an increase in the number of message input/output lines to reduce a chip size. A multi-path accessible semiconductor memory device(100) includes at least one shared memory region(112) and mail box regions(260,270). The shared memory region is operatively connected to a plurality of independent ports(120,130), selectively accessed through a data access path formed between one of the ports, which is authorized, and the shared memory, and allocated to a memory cell array. The mail box regions are respectively provided for the ports for message communication among the ports and share a data input/output line which forms the data access path to be accessed corresponding to a specific address of the shared memory region.
Abstract:
A semiconductor memory device and a method for testing the same are provided to secure contacting states of pads by increasing a pad size and a pad pitch in a wafer test process. A plurality of internal circuits are formed in a die. A plurality of first and second channel pads(20-1 to 20-(N+1),30-1 to 30-(N+1)) having a first pad size and a first pad pitch are alternately arranged in parallel to each other on a straight line of the die. The first and second channel pads alternately and selectively come in contact with test probes(150-1 to 150(N+1)) in order to receive a wafer test signal from the outside and to output signals of the internal circuits to the outside. A probe card is formed at an interval of the first or the second channel pads in order to test the first or the second channel pads.
Abstract:
공유 뱅크를 가지는 멀티 포트 반도체 메모리 장치와 그 리프레시 방법이 개시된다. 상기 반도체 메모리 장치는 적어도 하나의 공유 뱅크를 구비하는 메모리 코어; 제1 포트 및 제2 포트; 및 상기 적어도 하나의 공유 뱅크를 선택적으로 상기 제1 또는 제2 포트를 통하여 대응되는 외부장치와 접속하도록 제어하는 권한 제어부를 구비하며, 상기 적어도 하나의 공유 뱅크는, 대응되는 외부장치로부터 출력된 제1명령에 기초하여 리프레시 동작을 수행하고, 상기 권한 제어부에 의하여 권한이 전환될 때마다 상기 리프레시 동작을 더 수행하여 리프레시 부족 현상을 방지할 수 있다. 공유 뱅크, 리프레시