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    화학적 기계적 평탄화 공정의 실시간 전기화학적 분석 장치
    81.
    发明授权
    화학적 기계적 평탄화 공정의 실시간 전기화학적 분석 장치 失效
    화학적기계적평탄화공정의실시간전기화학적분석장

    公开(公告)号：KR100456091B1

    公开(公告)日：2004-11-08

    申请号：KR1020020024523

    申请日：2002-05-03

    Applicant: 한국과학기술연구원

    Inventor： 이종호 ,  김주선 ,  이해원 ,  임건자 ,  김태은

    IPC: H01L21/304

    Abstract: PURPOSE: A system for in-situ electrochemical monitoring of chemical mechanical planarization is provided to be capable of observing polishing speed and the electrical chemical change of slurry and a semiconductor wafer in real time. CONSTITUTION: A system for in-situ electrochemical monitoring of chemical mechanical planarization is provided with an operation electrode(1) attached to a wafer chuck(2), a reference electrode(3) contacting the polishing slurry supplied to the center portion of a polishing pad(8), and a reverse electrode(4) contacting the slurry at the peripheral portion of the polishing pad. Preferably, the operation electrode is attached to the lateral portion of the wafer chuck. Preferably, the operation electrode has a curved contact part corresponding to the contact portion of the wafer chuck.

    Abstract translation: 目的：提供一种用于化学机械平面化的原位电化学监测的系统，能够实时观察抛光速度以及浆料和半导体晶片的电化学变化。 本发明提供了一种用于化学机械平坦化的原位电化学监测的系统，该系统具有附着于晶片卡盘（2）的操作电极（1），接触供应至抛光中心部分的抛光浆料的参考电极（3） 垫（8）和反向电极（4），其在抛光垫的周边部分与浆液接触。 优选地，操作电极附接到晶片卡盘的侧部。 优选地，操作电极具有对应于晶片吸盘的接触部分的弯曲接触部分。

    이소결성 초미립 티탄산바륨 분말 제조방법
    82.
    发明授权
    이소결성 초미립 티탄산바륨 분말 제조방법 失效
    이소결성초미립티탄산바륨분말제조방법

    公开(公告)号：KR100395512B1

    公开(公告)日：2003-08-25

    申请号：KR1020000053608

    申请日：2000-09-08

    Applicant: 한국과학기술연구원

    Inventor： 김병국 ,  이종호

    IPC: C01G23/04

    Abstract: PURPOSE: A method for fabricating easily sinterable ultrafine BaTiO3 particle having a mean particle size of less than 1μm is provided, which is characterized in that after pretreatment hydrothermal reaction of hydrated TiO2 gel and Ba(OH)2·8H2O at a temperature range of lower than hydrothermal reaction by 40 to 60deg.C, main hydrothermal reaction is performed. CONSTITUTION: The fabrication method of easily sinterable ultrafine BaTiO3 particle includes the steps of (i) reacting aqueous solution of TiCl4 with NH4OH to prepare TiO2·xH2O gel; (ii) preparation of mixed slurry of TiO2·xH2O gel and (Ba(OH)2· 8H2O)b wherein Ba/Ti of the mixed slurry is 1.2; (iii) pretreatment of the mixed slurry of TiO2·xH2O gel and (Ba(OH)2·8H2O) in a hydrothermal reactor at a temperature range of 140 to 160deg.C; (iv) performing hydrothermal reaction at a temperature range of 180 to 220deg.C; and (v) drying the resultant from the 4th step at 100deg.C for 24 hours to obtain ultrafine BaTiO3 particle.

    Abstract translation: 目的：提供一种制备平均粒度小于1微米的易烧结超细BaTiO 3颗粒的方法，其特征在于水合TiO 2凝胶和Ba（OH）2·8H 2 O的预处理水热反应 在低于水热反应的温度范围40〜60℃，进行主要的水热反应。 组成：易烧结的超细BaTiO 3颗粒的制造方法包括以下步骤：（i）使TiCl 4水溶液与NH 4 OH反应以制备TiO 2＆amp; xH 2 O凝胶; （ii）制备TiO 2和xH 2 O凝胶和（Ba（OH）2·8H 2 O）b的混合浆料，其中混合浆料的Ba / Ti为1.2; （iii）在140-160℃的温度范围内，在水热反应器中预处理TiO 2和XH 2 O凝胶和（Ba（OH）2·8H 2 O）的混合浆料; （iv）在180-220℃的温度范围内进行水热反应; （v）将第四步得到的产物在100℃干燥24小时，得到超细BaTiO 3颗粒。

    초미립 유전체 세라믹 조성물
    83.
    发明公开
    초미립 유전체 세라믹 조성물 失效
    超声波电介质陶瓷组合物

    公开(公告)号：KR1020020024849A

    公开(公告)日：2002-04-03

    申请号：KR1020000056623

    申请日：2000-09-27

    Applicant: 한국과학기술연구원

    Inventor： 김병국 ,  이종호

    IPC: C04B35/26 ,  H01B3/12 ,  H01G4/12

    CPC classification number: C04B35/2641 ,  H01B3/12 ,  H01G4/12

    Abstract: PURPOSE: Provided is a dielectric ceramics composition comprising Pb(Fe1/2Nb1/2)O3(PFN) including rare earth metal oxide(RE2O3) as a main raw material, and CuO as an additive. The composition has ultrafine particles(

    Abstract translation: 目的：提供包含作为主要原料的包含稀土金属氧化物（RE2O3）的Pb（Fe1 / 2Nb1 / 2）O3（PFN）和作为添加剂的CuO的电介质陶瓷组合物。 该组合物具有超细颗粒（<= 0.8微米），并在低温（1100℃）下烧结。 构成：通过以下步骤制备电介质陶瓷组合物：湿球磨PbO，Fe2O3，Nb2O5，RE2O3作为晶粒生长抑制剂，CuO作为由式表示的组成的烧结助剂，Pb（Fe1 / 2Nb1 / 2）O3 + xRE2O3 + yCuO，其中0.00

    실형상 반응결합 탄화규소 제조방법
    84.
    发明公开
    실형상 반응결합 탄화규소 제조방법 有权
    制造图案反应粘结碳化硅的方法

    公开(公告)号：KR1020010081258A

    公开(公告)日：2001-08-29

    申请号：KR1020000006460

    申请日：2000-02-11

    Applicant: 한국과학기술연구원

    Inventor： 송휴섭 ,  이해원 ,  전형우 ,  이종호 ,  하조웅 ,  최윤호

    IPC: C04B35/565

    CPC classification number: C04B35/573 ,  B28B1/14 ,  C04B35/634 ,  C04B41/91 ,  C04B2103/14 ,  C04B2103/40 ,  C04B2235/658

    Abstract: PURPOSE: A reaction bonding silicon carbide with a complete pattern is provided to improve handling strength of molding and to manufacture a complex pattern with easiness at a low cost. CONSTITUTION: A method for manufacturing a reaction bonding silicon carbide with a complete pattern is comprised of the steps of: preparing a slurry by uniformly mixing silicon carbide powder, a thermohardening resin, and a thermoplastic resin; forming a molding by injecting the slurry to an intended mold and heating to harden the slurry; removing the thermoplastic resin by heating the molding; carbonizing the thermohardening resin by heating the molding; and spreading a melting metal silicon into the carbonized molding.

    Abstract translation: 目的：提供具有完整图案的碳化硅的反应接合，以提高成型的处理强度并以低成本制造复杂的图案。 构成：用于制造具有完整图案的反应接合碳化硅的方法包括以下步骤：通过均匀混合碳化硅粉末，热硬化树脂和热塑性树脂来制备浆料; 通过将浆料注射到预期的模具并加热以使浆料硬化来形成模制品; 通过加热模制品去除热塑性树脂; 通过加热成型碳化热硬化树脂; 并将熔融金属硅铺展到碳化模制品中。

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