公开(公告)号：US20170176870A1

公开(公告)日：2017-06-22

申请号：US15384084

申请日：2016-12-19

Applicant: ASML Netherlands B.V.

Inventor： Paul Christiaan HINNEN ,  Simon Gijsbert Josephus MATHIJSSEN ,  Maikel Robert GOOSEN ,  Maurits VAN DER SCHAAR ,  Arie Jeffrey DEN BOEF

IPC: G03F7/20

CPC classification number: G03F7/70525 ,  G03F7/702 ,  G03F7/70641 ,  G03F7/70683 ,  G03F7/7085

Abstract: A lithographic apparatus (LA) prints product features and at least one focus metrology pattern (T) on a substrate. The focus metrology pattern is defined by a reflective reticle and printing is performed using EUV radiation (404) incident at an oblique angle (θ). The focus metrology pattern comprises a periodic array of groups of first features (422). A spacing (S1) between adjacent groups of first features is much greater than a dimension (CD) of the first features within each group. Due to the oblique illumination, the printed first features become distorted and/or displaced as a function of focus error. Second features 424 may be provided as a reference against which displacement of the first features may be seen. Measurement of this distortion and/or displacement may be by measuring asymmetry as a property of the printed pattern. Measurement can be done at longer wavelengths, for example in the range 350-800 nm.

公开(公告)号：US20160349627A1

公开(公告)日：2016-12-01

申请号：US15117409

申请日：2015-01-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Maurits VAN DER SCHAAR ,  Arie Jeffrey DEN BOEF ,  Omer Abubaker Omer ADAM ,  Te-Chih HUANG ,  Youping ZHANG

IPC: G03F7/20 ,  G01N21/88 ,  G01N21/47

CPC classification number: G03F7/70633 ,  G01N21/47 ,  G01N21/8806 ,  G01N2201/12 ,  G03F7/70683

Abstract: There is disclosed a method of measuring a process parameter for a manufacturing process involving lithography. In a disclosed arrangement the method comprises performing first and second measurements of overlay error in a region on a substrate, and obtaining a measure of the process parameter based on the first and second measurements of overlay error. The first measurement of overlay error is designed to be more sensitive to a perturbation in the process parameter than the second measurement of overlay error by a known amount.

Abstract translation: 公开了一种测量涉及光刻的制造工艺的工艺参数的方法。 在公开的布置中，该方法包括对基板上的区域中的覆盖误差执行第一和第二测量，并且基于重叠误差的第一和第二测量值获得处理参数的度量。 重叠误差的第一次测量被设计为对过程参数中的扰动比已知量的覆盖误差的第二次测量更敏感。

公开(公告)号：US20250138436A1

公开(公告)日：2025-05-01

申请号：US18690961

申请日：2022-08-16

Applicant: ASML Netherlands B.V.

Inventor： Armand Eugene Albert KOOLEN ,  Willem Marie Julia Marcel COENE ,  Alexander Prasetya KONIJNENBERG ,  Teunis Willem TUKKER ,  Arie Jeffrey DEN BOEF

IPC: G03F7/00 ,  G06T5/10

Abstract: Disclosed is a metrology method and associated devices. The method comprises obtaining a first image, said first image being subject to one or more non-isoplanatic aberrations of an optical system used to capture said image; and non-iteratively correcting said first image for the effect of said one or more non-isoplanatic aberrations by performing one or both of: a field non-isoplanatic correction operation in field space for said first image, said field space corresponding to a field plane of the optical system; and a pupil non-isoplanatic correction operation in pupil space for said first image, said pupil space corresponding to a pupil plane of the optical system. Said one or more non-isoplanatic aberrations comprise a class of non-isoplanatic aberrations describable as a convolution combined with an object distortion and/or a pupil distortion.

公开(公告)号：US20240361703A1

公开(公告)日：2024-10-31

申请号：US18769032

申请日：2024-07-10

Applicant: ASML Holding N.V. ,  ASML Netherlands B.V.

Inventor： Mohamed SWILLAM ,  Stephen ROUX ,  Tamer Mohamed Tawfik Ahmed Mohamed ELAZHARY ,  Arie Jeffrey DEN BOEF

IPC: G03F7/00 ,  G02B6/122 ,  G02B26/08

CPC classification number: G03F7/70633 ,  G02B6/1225 ,  G02B26/0833

Abstract: A sensor apparatus includes a sensor chip, an illumination system, a first optical system, a second optical system, and a detector system. The illumination system is coupled to the sensor chip and transmits an illumination beam along an illumination path. The first optical system is coupled to the sensor chip and includes a first integrated optic to configure and transmit the illumination beam toward a diffraction target on a substrate, disposed adjacent to the sensor chip, and generate a signal beam including diffraction order sub-beams generated from the diffraction target. The second optical system is coupled to the sensor chip and includes a second integrated optic to collect and transmit the signal beam from a first side to a second side of the sensor chip. The detector system is configured to measure a characteristic of the diffraction target based on the signal beam transmitted by the second optical system.

公开(公告)号：US20240027918A1

公开(公告)日：2024-01-25

申请号：US18004555

申请日：2021-05-27

Applicant: ASML Netherlands B.V.

Inventor： Simon Gijsbert Josephus MATHIJSSEN ,  Patricius Aloysius Jacobus TINNEMANS ,  Arie Jeffrey DEN BOEF ,  Kaustuve BHATTACHARYYA ,  Samee Ur REHMAN

IPC: G03F7/00 ,  G03F9/00

CPC classification number: G03F7/70633 ,  G03F9/7046 ,  G03F9/7042

Abstract: Disclosed is a method of improving a measurement of a parameter of interest. The method comprises obtaining metrology data comprising a plurality of measured values of the parameter of interest, relating to one or more targets on a substrate, each measured value relating to a different measurement combination of a target of said one or more targets and a measurement condition used to measure that target and asymmetry metric data relating to asymmetry for said one or more targets. A respective relationship is determined for each of said measurement combinations relating a true value for the parameter of interest to the asymmetry metric data, based on an assumption that there is a common true value for the parameter of interest over said measurement combinations. These relationships are used to improve a measurement of the parameter of interest.

公开(公告)号：US20230229094A1

公开(公告)日：2023-07-20

申请号：US18151334

申请日：2023-01-06

Applicant: ASML Netherlands B.V.

Inventor： Simon Reinald HUISMAN ,  Arjan Johannes Anton BEUKMAN ,  Arie Jeffrey DEN BOEF ,  Sebastianus Adrianus GOORDEN ,  Nitish KUMAR ,  Jin LIAN ,  Zili ZHOU

IPC: G03F9/00 ,  G02B27/28 ,  G02B26/08 ,  G03F7/20

CPC classification number: G03F9/7065 ,  G02B26/0833 ,  G02B27/283 ,  G03F7/70575 ,  G03F7/70616

Abstract: Disclosed is an illumination arrangement for spectrally shaping a broadband illumination beam to obtain a spectrally shaped illumination beam. The illumination arrangement comprises a beam dispersing element for dispersing the broadband illumination beam and a spatial light modulator for spatially modulating the broadband illumination beam subsequent to being dispersed. The illumination arrangement further comprises at least one of a beam expanding element for expanding said broadband illumination beam in at least one direction, located between an input of the illumination arrangement and the spatial light modulator; and a lens array, each lens of which for directing a respective wavelength band of the broadband illumination beam subsequent to being dispersed onto a respective region of the spatial light modulator.

公开(公告)号：US20230062585A1

公开(公告)日：2023-03-02

申请号：US17856213

申请日：2022-07-01

Applicant: ASML Netherlands B.V.

Inventor： Patricius Aloysius Jacobus TINNEMANS ,  Arie Jeffrey DEN BOEF ,  Armand Eugene Albert KOOLEN ,  Nitesh PANDEY ,  Vasco Tomas TENNER ,  Willem Marie Julia Marcel COENE ,  Patrick WARNAAR

IPC: G03F7/20 ,  G01B11/06 ,  G01B11/02 ,  G01N21/47 ,  G01N21/95 ,  G03F9/00

Abstract: Described is a metrology system for determining a characteristic of interest relating to at least one structure on a substrate, and associated method. The metrology system comprises a processor being configured to computationally determine phase and amplitude information from a detected characteristic of scattered radiation having been reflected or scattered by the at least one structure as a result of illumination of said at least one structure with illumination radiation in a measurement acquisition, and use the determined phase and amplitude to determine the characteristic of interest.

公开(公告)号：US20220057192A1

公开(公告)日：2022-02-24

申请号：US17519641

申请日：2021-11-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Kaustuve BHATTACHARYYA ,  Henricus Wilhelmus Maria VAN BUEL ,  Christophe David FOUQUET ,  Hendrik Jan Hidde SMILDE ,  Maurits VAN DER SCHAAR ,  Arie Jeffrey DEN BOEF ,  Richard Johannes Franciscus VAN HAREN ,  Xing Lan LIU ,  Johannes Marcus Maria BELTMAN ,  Andreas FUCHS ,  Omer Abubaker Omer ADAM ,  Michael KUBIS ,  Martin Jacobus Johan JAK

IPC: G01B11/14 ,  G03F7/20

Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.

公开(公告)号：US20200249584A1

公开(公告)日：2020-08-06

申请号：US16856128

申请日：2020-04-23

Applicant: ASML NETHERLANDS B.V.

Inventor： Robert John SOCHA ,  Arie Jeffrey DEN BOEF ,  Nitesh PANDEY

IPC: G03F7/20 ,  G01N21/88 ,  G01B11/27 ,  G01N21/956

Abstract: A method of adjusting a metrology apparatus, the method including: spatially dividing an intensity distribution of a pupil plane of the metrology apparatus into a plurality of pixels; and reducing an effect of a structural asymmetry in a target on a measurement by the metrology apparatus on the target, by adjusting intensities of the plurality of pixels.

公开(公告)号：US20200218167A1

公开(公告)日：2020-07-09

申请号：US16826479

申请日：2020-03-23

Applicant: ASML Netherlands B.V.

Inventor： Arie Jeffrey DEN BOEF ,  Ronald Joseph Antonius VAN DEN OETELAAR

IPC: G03F7/20 ,  G01N21/21 ,  G03F9/00 ,  G01N21/47

Abstract: A metrology apparatus for and a method of determining a characteristic of interest relating to at least one structure on a substrate. The metrology apparatus comprises a sensor and an optical system. The sensor is for detecting characteristics of radiation impinging on the sensor. The optical system comprises an illumination path and a detection path. The optical system is configured to illuminate the at least one structure with radiation received from a source via the illumination path. The optical system is configured to receive radiation scattered by the at least one structure and to transmit the received radiation to the sensor via the detection path.