公开(公告)号：JPH0267718A

公开(公告)日：1990-03-07

申请号：JP21852288

申请日：1988-09-02

Applicant: CANON KK

Inventor： KUROSAWA HIROSHI ,  AMAMIYA MITSUAKI ,  TERAJIMA SHIGERU ,  UDA KOJI ,  SHIMODA ISAMU ,  UZAWA SHUNICHI

IPC: H05H13/04 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To obtain data on a profile having a large S/N ratio by a method wherein the illuminance distribution of a synchrotron radiant light in the viscosity of a mask or a wafer is metered immediately after electrons are injected in a storage ring and after an exchange of a transmitting window. CONSTITUTION:If an aligner 9 is started, a controller 6 discriminates whether a transmitting window 5 is exchanged or not and if the window 5 is exchanged, electrons are injected in a storage ring 2 and after the injection is completed, an instrumentation of a profile is conducted by an X-ray detector 18. As the instrumentation method, a method of measuring by moving a stage 19 mounted with the detector 19 at several places decided in advance in an exposure region is applied. On the basis of this data, a control table for a shutter 11 is made. In case the window 5 is not exchanged, whether an electron injection is performed in the ring 2 or not is discriminated and in the case of being immediately after the electron injection, a measurement of an illuminance distribution, which is performed by the X-ray detector 18, is conducted. In case the electron injection is not performed, a normal exposure operation is conducted.

公开(公告)号：JPH01305518A

公开(公告)日：1989-12-08

申请号：JP13561688

申请日：1988-06-03

Applicant: CANON KK

Inventor： TERAJIMA SHIGERU ,  AMAMIYA MITSUAKI

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To perform optimum temperature control for a mask and wafer, by a structure wherein illuminance is measured through predetermined filters, and the control for exposure time and the temperature control for the mask and wafer are performed on the basis of the measured results. CONSTITUTION:A supporting plate 201 is moved to align a hole 202 with the position of a sensor 206 by which illuminance is measured. The measured result is then stored in a CPU 307. Next, the supporting plate 201 is again moved to measure the illuminance through a filter. The measured result is again stored in the CPU 307. On the basis of the measured values, the CPU 307 issues a command to both a shutter control section 304 and a temperature control section 305, thereby controlling both exposure time and temperature. In a similar manner, the controlled results on the basis of the illuminance measured through the other filter are compared with each other to perform an optimum control.

公开(公告)号：JPH01244462A

公开(公告)日：1989-09-28

申请号：JP6975988

申请日：1988-03-25

Applicant: CANON KK

Inventor： AMAMIYA MITSUAKI ,  UZAWA SHUNICHI

IPC: G03F1/00 ,  G03F1/72 ,  G03F1/74 ,  G03F1/84 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To use an electron beam for detecting faulty part at the time of correcting a faulty picture, as well and to simplify a mask correcting device and to shorten the correcting time by removing the photosensitive layer of a faulty mask part by projecting the electron beam and correcting the pattern of the part. CONSTITUTION:A mask 4 is constituted by successively laminating a plated under layer 2 and mask pattern 3 on a substrate 1 and a photosensitive layer 5 is formed on the pattern 3. A faulty pattern is detected in such a way that the mask 4 is scanned by using an electron beam 6 and produced secondary electrons are detected by means of a detector 7, and then, the electrons are compared with reference pattern data. At the time of scanning the mask 4 the electric current of the electron beam 6 is adjusted so that the layer 5 is not exposed to the beam 6. Then, after the electron beam 6 is projected on a faulty part A with a projecting quantity which is sufficient to expose the layer 5, the mask 4 is developed and the layer 5 having faulty part A is removed. After removing the faulty part A, a mask pattern 31 is formed at the faulty part A and the layers 5 and 2 are removed as necessary.

公开(公告)号：JPS63239755A

公开(公告)日：1988-10-05

申请号：JP7171087

申请日：1987-03-27

Applicant: CANON KK

Inventor： AMAMIYA MITSUAKI

IPC: H05G2/00 ,  H01J35/22 ,  H01L21/027 ,  H01L21/30 ,  H05G1/02

Abstract: PURPOSE:To make linear, high output pseudo-parallelized X-rays securable by opening a part of the side of a small tubular space and making X-ray emitted from there at the time of producing plasma in the small tubular space by creeping discharge along a wall to form the small tubular space, and generating these X-rays. CONSTITUTION:When a condenser Cd is charged and sufficiently large voltage is impressed on glass 8, a dielectric sheet 9 covering this glass 8 and material 10 are evaporated by creeping discharge of a capillary 2 whereby plasma 5 is produced. At this time, if an electrode beam is irradiated to the plasma 5 from a cathode 6, temperature in the plasma 5 goes up, and plasma density becomes high. And, X-rays 7 in the wavelength area conformed to the material 10 is produced and emitted linearly from a part which is not covered with a dielectric at the side of the capillary 2. In this manner linear, high output pseudo-parallelized X-rays are securable.

公开(公告)号：JPS63168943A

公开(公告)日：1988-07-12

申请号：JP22687

申请日：1987-01-06

Applicant: CANON KK

Inventor： AMAMIYA MITSUAKI

IPC: H05G2/00 ,  H01J35/22 ,  H01L21/027 ,  H01L21/30 ,  H05G1/02

Abstract: PURPOSE:To extend the life and easily generate X-rays having the desired wavelength by forming the wall faces of a capillary with a dielectric sheet and renewing the wall faces in response to the consumption of the wall faces. CONSTITUTION:A capillary 2 is constituted of six triangle pole-shaped insulators 8 and a dielectric sheet 9 covering the insulators so that the dielectric sheet 9 can be renewed. When a capacitor Cd is charged and the sufficiently large voltage is applied to the insulators 8, the dielectric sheet 9 covering the insulators 8 and a material 10 are evaporated by the creeping discharge of the capillary 2 to generate plasma 8. In this case, when an electron beam is radiated from a cathode 6 to the plasma 5, x-rays 7 in the wavelength area corresponding to the material 10 are generated. However, part of the surface of the dielectric sheet 9 facing the capillary 2 generates plasma by the creeping discharge, thus the sheet is made thin after X-rays are generated. Therefore, the dielectric sheet 9 is moved so that new faces not generating plasma encircle the capillary 2.

公开(公告)号：JPS62282432A

公开(公告)日：1987-12-08

申请号：JP12470086

申请日：1986-05-31

Applicant: CANON KK

Inventor： AMAMIYA MITSUAKI

IPC: G03F1/00 ,  G03F1/22 ,  G03F1/40 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To improve both resolving power and throughput in an X-ray lithography and to reduce the amount of positional deviation of the mask pattern and the wafer which are being exposed by a method wherein a conductive layer is provided substantially all over the part of exposure pattern. CONSTITUTION:A conductive layer 9 is provided on the whole surface of an exposed pattern part. When the first switch S1 is turned ON after the positioning of a wafer and a mask 1 has been finished, voltage V is applied between the conductive layer 9 and the wafer 6. When a potential difference is provided, sucking force works between the conductive layer 9 and the wafer 6. If the first switch S1 is turned ON, the sucking force F corresponding to the potential difference V works, the distance between the mask substrate 3 and the wafer 6 is reduced to the position in line with the tension working on a mask substrate 3. Then, if the potential difference V is in excess of the predetermined value, a protective layer 8 and the wafer 6 are closely contacted. When the protective layer 8 and the wafer 6 are closely contacted, the size of the penumbra generated while X-rays are being projected can be made small substantially, the degree of resolution is enhanced, the time of exposure is reduced sharply, and a throughput is increased.

公开(公告)号：JPS62246238A

公开(公告)日：1987-10-27

申请号：JP8721286

申请日：1986-04-17

Applicant: CANON KK

Inventor： AMAMIYA MITSUAKI

IPC: H01J35/22 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To maintain a high output X-ray generating capability for a long time, by forming a capillary wall surface with a dielectric sheet, and renewing the wall surface as it is consumed. CONSTITUTION:When a condenser Cd is charged and a sufficient voltage is applied to an insulator 8, a dielectric sheet 9 covering the insulator is evaporated by the surface discharge of capillaries 2 to generate a plasma 5. In this case, by radiating electron beams from a cathode 6 to the plasma 5, the temperature of the plasma 5 rises, the density of the plasm also rises, and X-rays 7 are generated. Since a part of the surface of the dielectric sheet 9 facing the capillaries 2 is made into plasma by the surface discharge, the sheet is made thinner. Therefore, the dielectric sheet 9 is moved so as to cover the capillaries 2 by the new surface which is not made into plasma yet.

公开(公告)号：JPS60239019A

公开(公告)日：1985-11-27

申请号：JP9289484

申请日：1984-05-11

Applicant: CANON KK

Inventor： AMAMIYA MITSUAKI

IPC: G03F1/00 ,  G03F1/22 ,  G03F1/68 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To reduce a half-shade part, and to contrive to enhance resolution of a mask for X-ray exposure by a method wherein an X-ray absorbing pattern is made to have an inclined surface in relation to a mask base plate, and the section thereof in the beam width direction is made to a trapezoid or made to have a shape close to a trapezoid. CONSTITUTION:A mask for X-ray exposure is constructed of a mask base plate 9 and an X-ray absorbing pattern 8, the pattern 8 has the inclined side in relation to the base plate 9, and the section in the line width direction is a trapezoid or has a shape close to a trapezoid. The broken lines in the figure indicate an X-ray absorbing pattern 5 having the vertical side wall in relation to the base plate 9. A half-shade part generated according to the pattern 5 thereof is the part formed by incident X-rays B, C, and size thereof is delta1. While, a half-shade part generated according to the pattern 8 is the part formed by the incident X- rays A, C, and size thereof is delta2. Size delta2 of the half-shade part formed by the pattern 8 is smaller distinctly as compared with size delta1 of the half-shade part formed by the pattern 5 like this.