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    SEMICONDUCTOR LASER
    81.
    发明专利
    SEMICONDUCTOR LASER 失效

    公开(公告)号：JPH02260683A

    公开(公告)日：1990-10-23

    申请号：JP8320689

    申请日：1989-03-31

    Applicant: CANON KK

    Inventor： IKEDA SOTOMITSU

    IPC: H01S5/00 ,  H01S5/042

    Abstract: PURPOSE:To enable an oscillating wave to be easily controlled in wavelength by a method wherein an end face loss is so set as to enable a semiconductor laser of this design to oscillate light correspondent to a large quantum energy when a current is uniformly injected and to oscillate light correspondent to a small quantum energy when a current is not uniformly injected. CONSTITUTION:A resonator is formed of a semiconductor which includes an active layer of quantum structure and laminated on a board 1, P electrodes 7 and 7 are provided to regions. I and. II of the resonator in a resonating direction, and lights correspondent to different quantum energies are made to oscillates by separately controlling currents injected through the electrodes 7 and 7 in density. The end face loss of the resonator is so set as to obtain a short wave light through the sum of resonator lights L1 and L2 at the uniform injection of a current, so that a long wave light can be oscillated through a length difference between the resonator lengths L1 and L2 at the nonuniform injection of a current. The end face loss can be controlled by coating one of the end faces with a dielectric film.

    DISTRIBUTED BRAGG REFLECTION TYPE SEMICONDUCTOR LASER AND MANUFACTURE THEREOF
    82.
    发明专利
    DISTRIBUTED BRAGG REFLECTION TYPE SEMICONDUCTOR LASER AND MANUFACTURE THEREOF 失效

    公开(公告)号：JPH0256985A

    公开(公告)日：1990-02-26

    申请号：JP20722888

    申请日：1988-08-23

    Applicant: CANON KK

    Inventor： IKEDA SOTOMITSU ,  MIYAZAWA SEIICHI

    IPC: H01S5/00 ,  H01S5/125 ,  H01S5/223

    Abstract: PURPOSE:To prepare a DBR laser by a small number of growth by a method wherein an optical guide is formed, a diffraction grating is cut while the current constriction layer of an active region is shaped, an active layer is laminated and the active layer and the optical guide are optically coupled on the same straight line. CONSTITUTION:A clad layer 2 and an optical guide layer 3 are epitaxial-grown on a substrate 1. The pitches of a diffraction grating are brought to l.lambda/2 ((l)represents an integer and lambda an oscillation wavelength in an active layer). When a I section is masked previously at that time, the diffraction grating is shaped only in a III section. the active region section I is left as current constriction sections on both sides of a resonator, and the DBR section III section is manufactured while leaving a central section in order to be changed into the optical guide. A clad layer 4, the active layer 5, a clad layer 6 and a cap layer 7 are formed onto the substrate 1, and lastly an insulating film 8 such as SiO2 is shaped for forming a current injection window, and P side electrode Au 9 and N side electrode Au 10 are evaporated. Accordingly, a DBR laser oscillated at a stable single wavelength by a small number of growth can be acquired.

    MULTIPLE WAVELENGTH LIGHT DETECTOR
    83.
    发明专利
    MULTIPLE WAVELENGTH LIGHT DETECTOR 失效

    公开(公告)号：JPH0256508A

    公开(公告)日：1990-02-26

    申请号：JP20722988

    申请日：1988-08-23

    Applicant: CANON KK

    Inventor： IKEDA SOTOMITSU

    IPC: G02B6/122 ,  G02B6/12 ,  H01L31/10

    Abstract: PURPOSE:To easily separate and detect multiplex light rays by detecting the light diffracted by the diffraction grating provided to a light guide layer by selective absorption layers of a quantum well structure having wavelength selectivity. CONSTITUTION:The light guide layer 5 is provided in the photodetector and the diffraction grating is formed on the light guide layer 5 to diffract part of the transmitted light and to detect the light by the selective absorption layer 3. Namely, the incident signal light on the detector transmits the light guide layer 4, is emitted to the outside and enters a fiber 200. The signal light is diffracted in the direction of the selective absorption layer by the diffraction grating formed on the light guide layer at the time of the passage through the light guide layer 4 and the light diffracted by the diffraction grating on the light guide layer 4 is selectively absorbed by the selective absorption layers 31, 32, 33 having energy gaps corresponding to the energy of the respective wavelengths lambda1, lambda2, lambda3. The detection current is determined by subtraction computation in this way.

    SURFACE CONDUCTIVE ELECTRON EMISSION ELEMENT, ELECTRON SOURCE, IMAGE FORMING DEVICE AND MANUFACTURE
    87.
    发明专利
    SURFACE CONDUCTIVE ELECTRON EMISSION ELEMENT, ELECTRON SOURCE, IMAGE FORMING DEVICE AND MANUFACTURE 失效

    公开(公告)号：JPH08162015A

    公开(公告)日：1996-06-21

    申请号：JP33037394

    申请日：1994-12-07

    Applicant: CANON KK

    Inventor： MIYAZAKI KAZUYA ,  IKEDA SOTOMITSU

    IPC: H01J9/02 ,  H01J1/30 ,  H01J1/316 ,  H01J31/12 ,  H01J31/15

    Abstract: PURPOSE: To provide a surface conductive electron emission element having high efficiency by forming a coating film composed mainly of carbon as a main component on a conductive thin film after a forming process, and fixing the coating film through a process of applying voltage between the element electrodes. CONSTITUTION: Electron electrodes 4, 5 are formed on a substrate 1 surface by the photolithographic technology after element electrode materials are deposited on the substrate 1, organic metallic solution is applied and left, and an organic metallic thin film is formed by communicating the electrodes 4, 5 with each other. After that, the organic metallic thin film is heated and burnt, and a conductive thin film 3 is formed. When electric power is supplied between the electrodes 4, 5, an electron emitting part 2 whose structure is changed is formed on the part of the conductive thin film 3. A coating film composed mainly of carbon is formed by applying heat treatment to the element which has completed the forming process in an atmosphere containing organic compounds, and the coating is fixed by applying of voltage. Pulse wherein the pulse height value is the rated voltage is repeatedly applied between the element electrodes of the electron emission element, and the coating film composed mainly of carbon is fixed and stabilized.

    PRODUCTION OF DIFFRACTION GRATING
    89.
    发明专利
    PRODUCTION OF DIFFRACTION GRATING 失效

    公开(公告)号：JPH06201909A

    公开(公告)日：1994-07-22

    申请号：JP36094292

    申请日：1992-12-28

    Applicant: CANON KK

    Inventor： IKEDA SOTOMITSU

    IPC: G02B5/18 ,  G02B6/12 ,  G02B6/13 ,  H01S5/00 ,  H01S3/18

    Abstract: PURPOSE:To provide a process for production of a diffraction grating capable of easily producing the diffraction grating having an arbitrary phase shift. CONSTITUTION:The diffraction grating is formed on a substrate 10 by using a two beam interference exposing method and etching. A diffraction grating periodic structure 12 of a mask layer formed on a layer 10 to be etched by the two beam interference exposing method is formed by etching on the layer 10 to be etched, in such a case. The layer to be etched is subjected to etching with high directivity from an etching angle direction having a certain angle thetafrom the normal vector of the layer to be etched within the plane inclusive of the normal vector of the layer to be etched and the diffraction grating vector at this time. The diffraction grating arbitrarily shifted in phase from the diffraction grating periodic structure 12 of the mask layer is, thereby, formed on the layer 10 to be etched. Arbitrary phase shift parts are formed within the diffraction grating of the layer 10 to be etched if the above-mentioned stages are repeated by varying the etching angle.

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