公开(公告)号：JPH1154504A

公开(公告)日：1999-02-26

申请号：JP20925897

申请日：1997-08-04

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI ,  AOYAMA JUNICHI

IPC: H01L21/3205 ,  C23C16/40 ,  H01L21/3105 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To prevent generation of ammonia by forming a cap insulator film on a planarization insulator film by using material gas containing inorganic silane compound gas, oxidizing agent and hydrocarbon, and heat-treating the film thus preventing production of particles and cracking. SOLUTION: A treated substrate on which a lower layer protective film 13 is formed is carried in a liquid phase CVD equipment, and set on a substrate stage, and a lower layer planarization insulator film 14 is formed under specific CVD conditions. The treated substrate on which the film 14 is formed is carried in plasma CVD equipment, and set on a substrate mounting electrode, and a lower layer cap isulator film 15 is formed on the surface of the film 14. The plasma CVD conditions are as follows; SiH4 is 100 sccm, O2 is 500 sccm, C2 H4 is 10 sccm, is 1,000 sccm, gas pressure is 1,330 Pa, RF power is 1,000 W, and substrate temperature is 350 deg.C. The film 14 having OH groups formed by the liquid phase CVD method is heat-treated.

公开(公告)号：JPH09283513A

公开(公告)日：1997-10-31

申请号：JP8666396

申请日：1996-04-09

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: H01L21/768 ,  H01L21/312 ,  H01L21/316 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To form an insulating film which is low in dielectric constant, excellent in heat resistance, and has good uniformity and flattening characteristics even on a large-diameter substrate. SOLUTION: A liquid composition containing a polymer compound dissolved into a solvent is fed from a reservoir tank 12 to an ultrasonic misting device 13. The misting device 13 mists the fed composition liquid, carries it on an N2 gas received from a gas cylinder 11, and then supplied to a shower head 2. From the shower head 2 the gas including misted particles is uniformly discharged. The operation until this stage is carried out in a first temperature range lower than the glass transition temperature of the polymer compound. Meanwhile, a wafer W is kept in a second temperature range that is higher than the glass transition temperature of the polymer compound and that is not larger than the pyrolysis temperature, so that the solvent is evaporated simultaneously with formation of a polymer coating on the wafer. In this method, a fluorine resin film having a ring structure contributing to a heat resistive property can by formed as an interlayer insulating film of a semiconductor device based on fine design rules.

公开(公告)号：JPH0964172A

公开(公告)日：1997-03-07

申请号：JP20983195

申请日：1995-08-18

Applicant: SONY CORP

Inventor： HAYAFUJI TAKANORI ,  MORIYAMA ICHIRO ,  HAYASHIDA SEIJI ,  HASEGAWA TOSHIAKI

IPC: H01L23/522 ,  H01L21/316 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To eliminate insulator capacity formed at a portion exceeding upper and lower ends of each conductor between the conductors and hence reduce capacity between the conductors by providing a cavity exceeding the upper and lower ends of each conductor between the conductors. SOLUTION: A plurality of conductors 12, 13 becoming a second layer are formed on a first interlayer insulating film 11 becoming a first insulating film. A second interlayer insulating film 14 becoming a second insulating film is formed to cover the conductors 12, 13. A cavity 15 having its height exceeding the upper and lower ends of each conductor 12, 13 is provided between the conductors 12, 13. For this, the cavity 15 is formed also on an upper layer part of the first interlayer insulating film 11 and also on a lower layer part of the second interlayer insulating film 14 formed at a location higher than the upper surface of each conductor 12, 13. Thus, a specific inductive capacity between the conductors is reduced and hence capacity between the conductors is reduced.

公开(公告)号：JPH0950995A

公开(公告)日：1997-02-18

申请号：JP20068095

申请日：1995-08-07

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: H01L21/31 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To reduce the dielectric constant of a silicon-based oxide film without sacrificing the reliability of the film by adding fluorine atoms to a silicon-based oxide doped with boron. SOLUTION: A silicon oxide film 12 is formed on the surface of a silicon substrate 11 and wiring 13 composed of an aluminum-based metal is formed on the film 12. In addition, an interlayer insulating film 21 is formed in a state where the film 21 covers the wiring 13. The film 21 is composed of an silicon oxide film formed by containing fluorine atoms in an silicon oxide doped with boron. The boron atoms are contained in at least the film 21 at a concentration of 10wt.%. Since a silicon oxide film 31 is formed on the insulating film 21, the dielectric constant of the film 21 can be reduced.

公开(公告)号：JPH08115976A

公开(公告)日：1996-05-07

申请号：JP24738894

申请日：1994-10-13

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: C23C16/40 ,  C23C16/50 ,  H01L21/31 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522

Abstract: PURPOSE: To deposit an SiOF film having low permittivity where both the concentration of fluorine and the controllability of coverage are satisfied, while reducing contamination due to particles generated at the time of film deposition, by changing the material gas in chemical vapor phase growth. CONSTITUTION: In the method for depositing an interlayer insulating film 13 of SiOF on the surface of a substrate 11 by chemical vapor phase growth, the material gas for chemical vapor phase growth comprises a gas (SiHF gas) composed of silicon, hydrogen and fluorine molecules and a gas (oxidizing agent) composed of hydrogen and oxygen molecules, for example. Polysilane gas is employed together with the SiHF gas and oxidizing agent in order to control the content of fluorine. Chemical vapor phase growth is carried out in a chemical vapor phase growth system through thermal decomposition reaction or in a remote plasma CVD system.

公开(公告)号：JPH07288236A

公开(公告)日：1995-10-31

申请号：JP10202194

申请日：1994-04-15

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: H01L21/205 ,  H01L21/318

Abstract: PURPOSE:To grow a vapor-growth film having the excellent film quality by eliminating the abnormal growth at the surface of a sample at the time of low-pressure vapor growth. CONSTITUTION:In a low-pressure vapor growth apparatus 1, an inner process tube 11 having an inner space 21 for causing the vapor growth is provided. An outer process tube 12 is provided outside the inner process tube 11 through a communicating space 31 from the side of one end 11A to an outer space 21. A nozzle 41, which supplies raw material gas 81 into the inner space 21, is provided in the communicating space 31. A heater 51 is provided outside the outer process tube 12.

公开(公告)号：JPH07230990A

公开(公告)日：1995-08-29

申请号：JP4524394

申请日：1994-02-18

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: H01L21/31 ,  H01L21/318

Abstract: PURPOSE:To form a thin silicon nitride film whose initial layer is improved without carrying out a thermal treatment. CONSTITUTION:After the surface of a substrate 10 is etched with etching gas G to remove a natural oxide film 11 from it, a chemical vapor growth process is performed to form a silicon nitride film 12 on the surface of the substrate 10 without exposing the surface of the substrate 10 to an oxidizing atmosphere following immediately after the removal of the oxide film 11. By the removal of the natural oxide film 11, the surface of the substrate 10 becomes active to nitrogen atom, so that the than silicon nitride film 12 whose initial layer is excellent. can be formed without, a heat treatment.

公开(公告)号：JPH06168893A

公开(公告)日：1994-06-14

申请号：JP34106292

申请日：1992-11-30

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI ,  WATANABE TETSUO

IPC: H01L21/205 ,  H01L21/31

Abstract: PURPOSE:To provide a low pressure filming system in which fluctuation of thickness and quality of thin film formed on the surface of a wafer can be suppressed between wafers. CONSTITUTION:The batch type low pressure filming system forms a thin film on the surface of a wafer by feeding reaction gas onto the surfaces of a plurality of wafers under low pressure. A gas discharge section 50 is provided for each wafer 30. Alternatively, the filming system comprises a cylindrical reaction tube, gas discharge sections 50 disposed at the opposite ends of the reaction tube, and a plurality of reaction gas introducing sections 40.

公开(公告)号：JPH06120145A

公开(公告)日：1994-04-28

申请号：JP28504092

申请日：1992-09-30

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: H01L21/205

Abstract: PURPOSE:To obtain a film forming equipment wherein film formation on the rear of a semiconductor substrate can be prevented, generation of particles can be restrained, purge gas flow rate can be reduced by making the purge gas effectively act, film thickness distribution can be improved, a large amount of purge gas can be made to flow, and correspondence with a process of high gas concentration is possible. CONSTITUTION:The title equipment is provided with a retaining stand 2 for mounting a semiconductor substrate, a heating equipment, and a gaseous raw material gas supplying means for supplying the gaseous raw material. Purge gas Ia-Ic flows out in the outer peripheral direction of the retaining stand. Further the title equipment is provided with mechanism which makes the purge gas flow from the rear, and an exhaust vent of purge gas is installed in the vicinity of the purge gas discharging outlet.

公开(公告)号：JPH053156A

公开(公告)日：1993-01-08

申请号：JP2966091

申请日：1991-01-30

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/10

Abstract: PURPOSE:To obtain a plasma processing device which is small in size, simple in structure and carries out a plasma processing over a wide range uniformly at a high speed by a method wherein a magnetic substance is provided inside a magnetic field forming coil deviating from the central axis of the coil, and the magnetic substance is made to revolve relatively to the coil concerned. CONSTITUTION:In a plasma processing device, where plasma 8 is generated inside a plasma reaction chamber 1, and a workpiece 4 is subjected to plasma processing in the plasma reaction chamber 1, a magnetic field forming means 31 which gives a divergent magnetic field to make the plasma 8 diverge and a magnetic field forming coil 3 installed near to the workpiece 4 are provided. Furthermore, a magnetic substance 2 is installed inside the magnetic field forming coil 3 deviating from the center axis of the coil 3, and the magnetic substance 2 is made to revolve around the rotating shaft 51, which deviates from the center axis of the magnetic substance 2, relatively to the magnetic field forming coil 3. For instance, a disc-shaped magnetic substance 2 of Permalloy is installed inside the coil 3 and revolved by a motor drive source 6.