公开(公告)号：CA2023933A1

公开(公告)日：1991-06-21

申请号：CA2023933

申请日：1990-08-24

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： NAKAMURA TSUTOMU ,  TANAKA KATSUYUKI ,  NAKAI TETSUO ,  IMAI TAKAHIRO ,  IKEGAYA AKIHIKO ,  FUJIMORI NAOJI

IPC: C04B41/50 ,  C04B41/85 ,  H01L21/447 ,  H01L21/603 ,  C23C16/26

Abstract: A bonding tool for TAB, used in the production of semiconductor chips, which is provided with, at the end thereof, a substrate (3) consisting of a member selected from the group consisting of sintered compacts of Si or Si3N4 as a predominant component, sintered compacts of SiC as a predominant component, sintered compacts of AlN as a predominant component and composite compacts thereof, the substrate being coated with polycrystalline diamond (7) deposited by gaseous phase synthesis method.

公开(公告)号：CA2720866C

公开(公告)日：2012-10-16

申请号：CA2720866

申请日：2009-04-02

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： MAJIMA MASATOSHI ,  INAZAWA SHINJI ,  NITTA KOJI ,  YAMAKAWA MASAHIRO ,  SUGIHARA TAKAYASU ,  TAKEDA YASUHIRO ,  AKAHANE YOSHIHIRO ,  IMAI TAKAHIRO

IPC: A61L9/00 ,  C25B9/19

Abstract: [Object] To provide a gas decomposition apparatus and a gas decomposition method in which no safety problems occur in spite of the application of a relatively high voltage between an anode and a cathode for the purpose of decomposing odorous gases of many types. [Solution] A catalytic electrode layer 6 that contains a catalyst and is porous; a counter electrode layer 7 that forms a pair with the catalytic electrode; and an electrolyte layer 15 that is sandwiched between the catalytic electrode and the counter electrode and has ion conductivity are included. The catalyst is held by the catalytic electrode in the form of being carried by a carrier containing a conductive material or the catalyst is directly carried by the catalytic electrode. A conductive material in the catalytic electrode, the conductive material being in contact with the catalyst, is not a noncovalent carbon material.

公开(公告)号：DE60336238D1

公开(公告)日：2011-04-14

申请号：DE60336238

申请日：2003-06-18

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： NAMBA AKIHIKO ,  IMAI TAKAHIRO ,  NISHIBAYASHI YOSHIKI

IPC: C30B29/04 ,  C30B25/02 ,  H01L21/04 ,  H01L21/20 ,  H01L21/205 ,  H01L21/44

公开(公告)号：DE602006004100D1

公开(公告)日：2009-01-22

申请号：DE602006004100

申请日：2006-04-07

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： MEGURO KIICHI ,  YAMAMOTO YOSHIYUKI ,  IMAI TAKAHIRO

IPC: C30B25/20 ,  C30B29/04

Abstract: The object of the present invention is to obtain a high quality single crystalline diamond that has less distortion and large area suitable for semiconductor device substrates or an optical component material. The present invention is a single crystalline diamond produced by chemical vapor deposition, wherein, when a linear polarized light which is composed of two linear polarized lights perpendicular to each other is introduced into one main face of the single crystalline diamond, a maximum value of a retardation between the two linear polarized lights perpendicular to each other which come out from an opposite main face is not more than 50 µm at maximum per a thickness of 100 µm across an entire of the single crystalline diamond, and also a method for producing the diamond.

公开(公告)号：DE69936672D1

公开(公告)日：2007-09-13

申请号：DE69936672

申请日：1999-01-15

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： YAMAMOTO YOSHIYUKI ,  SAITO HIROHISA ,  IMAI TAKAHIRO ,  MEGURO KIICHI

IPC: H01L23/373 ,  H01L21/48 ,  H01L23/14 ,  H01L23/495

Abstract: A heatsink comprising: a substrate (26) of a sintered compact including Cu and W, and a thin diamond film layer (31) formed on a surface of said substrate (26), wherein the Cu content in said substrate is at least 5% by weight, and wherein the diffraction peak intensity of the (211) plane of W is at least 30 times the diffraction peak intensity of the (200) plane of Cu in an X-ray diffraction chart obtained by irradiating said thin diamond film (31) layer with an X-ray.

公开(公告)号：CA2594599A1

公开(公告)日：2007-04-05

申请号：CA2594599

申请日：2006-09-21

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： NISHIBAYASHI YOSHIKI ,  TATSUMI NATSUO ,  YAMAMOTO YOSHIYUKI ,  IMAI TAKAHIRO

IPC: H01J1/304 ,  H01J9/02

Abstract: An electron emitting device 2 comprises an electron emitting portion 6 made of diamond. At an electron emission current value of 10 µA or more, a deviation of the electron emission current value over one hour is within ±20% in the electron emitting device 2. The number of occurrence of step-like noise changing the electron emission current value stepwise is once or less per 10 minutes.

公开(公告)号：CA2608982A1

公开(公告)日：2006-12-21

申请号：CA2608982

申请日：2006-06-19

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： YAMAMOTO YOSHIYUKI ,  NISHIBAYASHI YOSHIKI ,  IMAI TAKAHIRO ,  UEDA AKIHIKO

IPC: H01J1/15 ,  H01J37/06 ,  H01J37/305

Abstract: An object of the present invention is to provide an electron emission cathode and an electron emission source using diamond and having a high brightness and a small energy width that are suitable for electron ray and electron beam devices and vacuum tubes, in particular, electron microscopes and electron beam exposure devices, and also electronic devices using such cathode and source. The diamond electron emission cathode according to the present invention has single crystal diamond in at least part thereof. The diamond electron emission cathode has a columnar shape having a sharpened acute section and a heating section. One electron emitting portion is provided in the sharpened acute section. The electron emitting portion and heating section comprise a diamond semiconductor. The diamond semiconductor is a p-type semiconductor having p-type impurities at 2 × 10 15 cm -3 or higher. The semiconductor is present in the electron emitting portion. A metal layer is formed on the surface of the electron emission cathode. The metal layer is present in at least part of the heating section. The shortest distance from the electron emitting portion to an end portion of the metal layer is 500 µm or less. An electric current for heating is supplied to the heating section with a pair of current introducing terminals, and some of the introduced electrons can be emitted from the electron emitting portion.

公开(公告)号：CA2608548A1

公开(公告)日：2006-12-21

申请号：CA2608548

申请日：2006-06-19

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： YAMAMOTO YOSHIYUKI ,  UEDA AKIHIKO ,  NISHIBAYASHI YOSHIKI ,  IMAI TAKAHIRO

IPC: H01J1/15 ,  H01J37/06 ,  H01J37/305

Abstract: An object of the present invention is to provide an electron emission cathode and an electron emission source using diamond and having a high brightness and a small energy width that are suitable for electron ray and electron beam devices and vacuum tubes, in particular, electron microscopes and electron beam exposure devices, and also electronic devices using such cathode and source. The diamond electron emission cathode according to the present invention has single crystal diamond in at least part thereof. The diamond electron emission cathode has a columnar shape having a sharpened acute section and a heating section. One electron emitting portion is provided in the sharpened acute section. The electron emitting portion and heating section comprise a diamond semiconductor. The diamond semiconductor is a p-type semiconductor having p-type impurities at 2 × 10 15 cm -3 or higher. The semiconductor is present in the electron emitting portion. A metal layer is formed on the surface of the electron emission cathode. The metal layer is present in at least part of the heating section. The shortest distance from the electron emitting portion to an end portion of the metal layer is 500 µm or less. An electric current for heating is supplied to the heating section with a pair of current introducing terminals, and some of the introduced electrons can be emitted from the electron emitting portion.

公开(公告)号：CA2549283A1

公开(公告)日：2006-05-11

申请号：CA2549283

申请日：2005-05-26

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： YAMAMOTO YOSHIYUKI ,  MEGURO KIICHI ,  IMAI TAKAHIRO

IPC: C30B29/04

Abstract: A single-crystal diamond grown according to a vapor-phase synthesizing metho d characterized in that a phase difference between two linearly polarized ligh ts orthogonal to each other which as a result of irradiating of one main plane of crystal with a linearly polarized radiation regarded as being synthesized fr om two linearly polarized lights orthogonal to each other, have been emitted fr om the opposite main plane is a maximum of 50 nm or less per 100 .mu.m of cryst al thickness throughout the crystal. This single-crystal diamond is an unprecedented single-crystal diamond of large size and high quality that has properties extremely desired in semiconductor device substrates and optical part applications requiring low strain.

公开(公告)号：AU2003280758A1

公开(公告)日：2005-02-15

申请号：AU2003280758

申请日：2003-11-12

Applicant: ALMT CORP ,  SUMITOMO ELECTRIC INDUSTRIES

Inventor： KAWAI SHIGETAKA ,  MATSUMOTO YASUSHI ,  ISHIBASHI KEIJI ,  IMAI TAKAHIRO ,  KAZAHAYA KATSUO

IPC: B23G5/06 ,  C23C16/02 ,  C23C16/27 ,  B23B27/14 ,  B23B27/20 ,  B23C5/16 ,  B23P15/28

Abstract: The invention provides a diamond coated tool having an excellent cutting performance, wear resistance, adhesion resistance and work surface roughness in combination and a method of producing such a tool. A diamond coated tool comprising a substrate and a diamond coating formed on the surface of the substrate, wherein said substrate is made of a cemented carbide or a cermet, diamond grains constituting a growth surface of said diamond coating has an average grain size of about 1.5 micrometers or below, said diamond coating has a thickness ranging from about 0.1 micrometer to 20 micrometers, and said diamond coating has an average surface roughness Ra ranging from about 0.01 micrometer to 0.2 micrometer. Such a diamond coated tool can be obtained by carburizing the substrate consisting of a cemented carbide or a cermet, and growing up a diamond coating thereon.