公开(公告)号：US20150338336A1

公开(公告)日：2015-11-26

申请号：US14814537

申请日：2015-07-31

Applicant: Sensor Electronic Technology, Inc.

Inventor： Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: G01N21/05 ,  A61L2/10 ,  G02B5/06

CPC classification number: G01N21/05 ,  A61L2/10 ,  A61L9/20 ,  A61L2202/122 ,  C02F1/325 ,  G01N21/0303 ,  G01N21/031 ,  G01N21/33 ,  G01N21/3504 ,  G01N2021/052 ,  G01N2021/317 ,  G02B5/06

Abstract: A chamber configured to increase an intensity of target radiation emitted therein is provided. The chamber includes an enclosure at least partially formed by a set of transparent walls. Each transparent wall can comprise a first material transparent to the target radiation and having a refractive index greater than 1.1 for the target radiation. The outer surface of the set of transparent walls can include a set of cavities, each cavity comprising an approximately prismatic void. Additionally, a medium located adjacent to an outer surface of the set of transparent walls can have a refractive index within approximately one percent of a refractive index of a vacuum for the target radiation.

Abstract translation: 提供了一种被配置为增加其中发射的目标辐射的强度的室。 该室包括至少部分地由一组透明壁形成的外壳。 每个透明壁可以包括对靶辐射透明的第一材料，并且对于目标辐射具有大于1.1的折射率。 一组透明壁的外表面可以包括一组空腔，每个空腔包括近似棱柱形的空隙。 此外，位于该组透明壁的外表面附近的介质可以具有在靶辐射的真空的折射率的约百分之一内的折射率。

公开(公告)号：US20150337442A1

公开(公告)日：2015-11-26

申请号：US14804401

申请日：2015-07-21

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.

Inventor： Igor Agafonov ,  Jinwei Yang ,  Michael Shur ,  Remigijus Gaska ,  Alexander Dobrinsky

IPC: C23C16/455 ,  C23C16/458 ,  H01L21/02 ,  C23C16/52

CPC classification number: C23C16/45565 ,  C23C16/45563 ,  C23C16/4584 ,  C23C16/52 ,  H01L21/0254 ,  H01L21/0262 ,  H01L22/12 ,  H01L22/26

Abstract: A solution for manufacturing semiconductors is provided. An embodiment provides a chemical vapor deposition reactor, which includes a chemical vapor deposition chamber. A substrate holder located in the chemical vapor deposition chamber can be rotated about its own axis at a first angular speed, and a gas injection component located in the chemical vapor deposition chamber can be rotated about an axis of the gas injection component at a second angular speed. The angular speeds are independently selectable and can be configured to cause each point on a surface of a substrate wafer to travel in an epicyclical trajectory within a gas flow injected by the gas injection component. An angle between the substrate holder axis and the gas injection component axis and/or a distance between the substrate holder axis and the gas injection component axis can be controlled variables.

Abstract translation: 提供制造半导体的解决方案。 实施例提供了一种化学气相沉积反应器，其包括化学气相沉积室。 位于化学气相沉积室中的衬底保持器可以以其第一角速度围绕其自身的轴线旋转，并且位于化学气相沉积室中的气体注入组件可以围绕气体注入部件的轴线以第二角度 速度。 角速度是可独立选择的，并且可以被配置成使得衬底晶片的表面上的每个点在由气体注入部件注入的气流中的行星轨迹中行进。 衬底保持器轴线和气体注入部件轴线之间的角度和/或衬底保持器轴线和气体注入部件轴线之间的距离可以是受控变量。

公开(公告)号：US20150295155A1

公开(公告)日：2015-10-15

申请号：US14683184

申请日：2015-04-10

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Remigijus Gaska

IPC: H01L33/64 ,  H01L33/32 ,  H01L21/48 ,  H01L23/373 ,  H01L21/02 ,  H01L33/00 ,  H01L23/367

CPC classification number: H01L23/367 ,  H01L21/02428 ,  H01L21/0254 ,  H01L21/187 ,  H01L21/4871 ,  H01L21/76251 ,  H01L23/3732 ,  H01L23/3736 ,  H01L29/0676 ,  H01L29/2003 ,  H01L29/7786 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/641 ,  H01L33/642 ,  H01L2924/0002 ,  H01L2933/0075 ,  H01L2924/00

Abstract: A structured substrate configured for epitaxial growth of a semiconductor layer thereon is provided. Structures can be formed on a side of the structured substrate opposite that of the growth surface for the semiconductor layer. The structures can include cavities and/or pillars, which can be patterned, randomly distributed, and/or the like. The structures can be configured to modify one or more properties of the substrate material such that growth of a higher quality semiconductor layer can be obtained.

Abstract translation: 提供了构造成用于在其上外延生长半导体层的结构化衬底。 可以在结构化衬底的与半导体层的生长表面相反的一侧上形成结构。 该结构可以包括可被图案化，随机分布和/或类似的空腔和/或支柱。 该结构可以被配置为修改衬底材料的一个或多个特性，使得可以获得更高质量的半导体层的生长。

公开(公告)号：US20150295133A1

公开(公告)日：2015-10-15

申请号：US14686845

申请日：2015-04-15

Applicant: Sensor Electronic Technology, Inc.

Inventor： Daniel D. Billingsley ,  Robert M. Kennedy ,  Wenhong Sun ,  Rakesh Jain ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/32 ,  H01L33/06 ,  H01L21/02 ,  H01L29/205 ,  H01L29/778 ,  H01L29/66 ,  H01L33/00 ,  H01L29/20

CPC classification number: H01L33/12 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/155 ,  H01L29/2003 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32 ,  H01L2224/16225

Abstract: A heterostructure for use in fabricating an optoelectronic device is provided. The heterostructure includes a layer, such as an n-type contact or cladding layer, that includes thin sub-layers inserted therein. The thin sub-layers can be spaced throughout the layer and separated by intervening sub-layers fabricated of the material for the layer. The thin sub-layers can have a distinct composition from the intervening sub-layers, which alters stresses present during growth of the heterostructure.

Abstract translation: 提供了用于制造光电子器件的异质结构。 异质结构包括诸如n型接触或包覆层的层，其包括插入其中的薄子层。 薄的子层可以遍及整个层间隔开，并由用于该层的材料制成的中间子层隔开。 薄的子层可以具有与插入的子层不同的组成，其在异质结构的生长期间改变应力存在。

公开(公告)号：US20150295127A1

公开(公告)日：2015-10-15

申请号：US14683177

申请日：2015-04-10

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.

Inventor： Michael Shur ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Remigijus Gaska

IPC: H01L33/00 ,  H01L33/22 ,  H01L21/762 ,  H01L29/778 ,  H01L29/66 ,  H01L21/02 ,  H01L33/32 ,  H01L29/20

CPC classification number: H01L23/367 ,  H01L21/02428 ,  H01L21/0254 ,  H01L21/187 ,  H01L21/4871 ,  H01L21/76251 ,  H01L23/3732 ,  H01L23/3736 ,  H01L29/0676 ,  H01L29/2003 ,  H01L29/7786 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/641 ,  H01L33/642 ,  H01L2924/0002 ,  H01L2933/0075 ,  H01L2924/00

Abstract: A composite substrate configured for epitaxial growth of a semiconductor layer thereon is provided. The composite substrate includes multiple substrate layers formed of different materials having different thermal expansion coefficients. The thermal expansion coefficient of the material of the semiconductor layer can be between the thermal coefficients of the substrate layer materials. The composite substrate can have a composite thermal expansion coefficient configured to reduce an amount of tensile stress within the semiconductor layer at room temperature and/or an operating temperature for a device fabricated using the heterostructure.

Abstract translation: 提供了一种被配置用于在其上外延生长半导体层的复合衬底。 复合衬底包括由具有不同热膨胀系数的不同材料形成的多个衬底层。 半导体层的材料的热膨胀系数可以在衬底层材料的热系数之间。 复合衬底可以具有复合热膨胀系数，其被配置为在室温下和/或使用异质结构制造的器件的工作温度下减少半导体层内的拉伸应力的量。

公开(公告)号：US20150255672A1

公开(公告)日：2015-09-10

申请号：US14721082

申请日：2015-05-26

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Remigijus Gaska ,  Jinwei Yang

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/06 ,  B82Y10/00 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/15 ,  H01L29/2003 ,  H01L29/778 ,  H01L33/0025 ,  H01L33/32

Abstract: A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range.

公开(公告)号：US20150250907A1

公开(公告)日：2015-09-10

申请号：US14640051

申请日：2015-03-06

Applicant: Sensor Electronic Technology, Inc.

Inventor： Yuri Bilenko ,  Alexander Dobrinsky ,  Michael Shur

IPC: A61L2/10

CPC classification number: A61L2/10 ,  A61L2202/14

Abstract: A solution for disinfecting a screen of an item using ultraviolet radiation is provided. The solution can provide an electronic device including a screen utilized by a user of the electronic device. The screen can be an ultraviolet transparent screen that covers at least some of the internal portion of the electronic device and a set of ultraviolet radiation sources can be located adjacent to the transparent screen. The set of ultraviolet radiation sources can be configured to generate ultraviolet radiation directed towards an external surface of the ultraviolet transparent screen. The electronic device can further include a monitoring and control system, which can manage the ultraviolet radiation generation by monitoring a set of attributes relating to the external surface of the screen and controlling, based on the monitoring, ultraviolet radiation directed at the external surface of the screen.

Abstract translation: 提供了一种使用紫外线辐射消毒物品屏幕的解决方案。 该解决方案可以提供包括由电子设备的用户使用的屏幕的电子设备。 屏幕可以是覆盖电子设备内部的至少一部分的紫外线透明屏幕，并且一组紫外线辐射源可以位于透明屏幕附近。 紫外线辐射源组可被配置成产生指向紫外线透明屏的外表面的紫外线。 电子设备还可以包括监视和控制系统，其可以通过监视与屏幕的外表面相关的一组属性来管理紫外线辐射生成，并且基于监视来控制针对屏幕的外表面的紫外线辐射 屏幕。

公开(公告)号：US20150238645A1

公开(公告)日：2015-08-27

申请号：US14630692

申请日：2015-02-25

Applicant: Sensor Electronic Technology, Inc.

Inventor： Igor Agafonov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska ,  Saulius Smetona

IPC: A61L2/10 ,  A61L2/26 ,  A61L2/24

CPC classification number: A61L2/10 ,  A23L3/28

Abstract: A solution for disinfecting an area using ultraviolet radiation is provided. The solution can include an enclosure including at least one ultraviolet transparent window and a set of ultraviolet radiation sources located adjacent to the at least one ultraviolet transparent window. The set of ultraviolet radiation sources can be configured to generate ultraviolet radiation directed through the at least one ultraviolet transparent window. An input unit can be located on the enclosure and configured to generate an electrical signal in response to pressure applied to the enclosure. A control unit can be configured to manage the ultraviolet radiation by monitoring the electrical signal generated by the input unit and controlling, based on the monitoring, the ultraviolet radiation generated by the set of ultraviolet radiation sources.

Abstract translation: 提供了一种使用紫外线辐射消毒区域的方案。 该解决方案可以包括包括至少一个紫外线透明窗口和位于该至少一个紫外线透明窗口附近的一组紫外线辐射源的外壳。 紫外线辐射源组可被配置成产生穿过至少一个紫外线透明窗口的紫外线辐射。 输入单元可以位于机箱上并被配置为响应于施加到外壳的压力而产生电信号。 控制单元可以被配置为通过监视由输入单元产生的电信号来控制紫外线辐射，并且基于该监视来控制由该组紫外线辐射源产生的紫外线辐射。

公开(公告)号：US20150228855A1

公开(公告)日：2015-08-13

申请号：US14297656

申请日：2014-06-06

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/22 ,  H01L33/58 ,  G06F17/50 ,  H01L33/20

CPC classification number: H01L33/22 ,  F21V5/002 ,  G06F17/5009 ,  G06F17/5045 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20 ,  H01L2933/0058 ,  H01L2933/0083 ,  Y10T29/49

Abstract: A profiled surface for improving the propagation of radiation through an interface is provided. The profiled surface includes a set of large roughness components providing a first variation of the profiled surface having a characteristic scale approximately an order of magnitude larger than a target wavelength of the radiation. The set of large roughness components can include a series of truncated shapes. The profiled surface also includes a set of small roughness components superimposed on the set of large roughness components and providing a second variation of the profiled surface having a characteristic scale on the order of the target wavelength of the radiation.

Abstract translation: 提供了用于改善辐射通过界面的传播的异型表面。 成形表面包括一组大的粗糙度部件，其提供成型表面的第一变化，其特征标度比辐射的目标波长大大大大约一个数量级。 该组粗糙度较大的部件可包括一系列截头形状。 成形表面还包括一​​组小的粗糙度部件，叠加在该组粗糙度较大的部件上，并提供具有辐射目标波长级的特征刻度的成型表面的第二变型。

公开(公告)号：US09061082B2

公开(公告)日：2015-06-23

申请号：US13863547

申请日：2013-04-16

Applicant: Sensor Electronic Technology, Inc.

Inventor： Remigijus Gaska ,  Michael Shur ,  Alexander Dobrinsky ,  Timothy James Bettles ,  Maxim S Shatalov

IPC: G01J1/42 ,  A61L2/10 ,  A61N5/06 ,  A61L2/00

CPC classification number: A61L2/10 ,  A61L2/0047 ,  A61N5/0601 ,  A61N5/0624 ,  A61N2005/0609 ,  A61N2005/0651 ,  A61N2005/0661

Abstract: A system for sterilizing at least one surface of an object is provided. The system includes a set of ultraviolet radiation sources and a set of wave guiding structures configured to direct ultraviolet radiation having a set of target attributes to a desired location on at least one surface of the object. The set of wave guiding structures can include at least one ultraviolet reflective surface having an ultraviolet reflection coefficient of at least thirty percent. Furthermore, the system can include a computer system for operating the ultraviolet radiation sources to deliver a target dose of ultraviolet radiation to the at least one target surface of the object.

Abstract translation: 提供了一种用于对物体的至少一个表面进行灭菌的系统。 该系统包括一组紫外线辐射源和一组波导结构，其被配置为将具有一组目标属性的紫外线辐射引导到物体的至少一个表面上的期望位置。 该波导构造可包括至少一个具有至少百分之三十的紫外反射系数的紫外线反射表面。 此外，该系统可以包括用于操作紫外线辐射源以将目标剂量的紫外线辐射传送到物体的至少一个目标表面的计算机系统。