公开(公告)号：US20090200262A1

公开(公告)日：2009-08-13

申请号：US12227509

申请日：2007-04-27

Applicant: Dick Scholten ,  Julia Cassemeyer ,  Michael Stumber ,  Franz Laermer ,  Ando Feyh ,  Christian Maeurer

Inventor： Dick Scholten ,  Julia Cassemeyer ,  Michael Stumber ,  Franz Laermer ,  Ando Feyh ,  Christian Maeurer

IPC: C23F1/00

CPC classification number: B81C1/00119 ,  A61M37/0015 ,  A61M2037/003 ,  A61M2037/0038 ,  A61M2037/0046 ,  A61M2037/0053 ,  B81C2201/0112 ,  B81C2201/0115

Abstract: A method for producing porous microneedles (10) situated in an array on a silicon substrate includes: providing a silicon substrate, applying a first etching mask, patterning microneedles using a DRIE process (“deep reactive ion etching”), removing the first etching mask, at least partially porosifying the Si substrate, the porosification beginning on the front side of the Si substrate and a porous reservoir being formed.

Abstract translation: 一种位于硅衬底阵列上的多孔微针（10）的制造方法，包括：提供硅衬底，施加第一蚀刻掩模，使用DRIE工艺（“深反应离子蚀刻”）图案化微针，除去第一蚀刻掩模 至少部分地使Si衬底开孔，从Si衬底的正面开始的孔隙化和形成的多孔容器。

公开(公告)号：US20080218843A1

公开(公告)日：2008-09-11

申请号：US12119712

申请日：2008-05-13

Applicant: Teruo Sasagawa ,  Lior Kogut

Inventor： Teruo Sasagawa ,  Lior Kogut

IPC: G02B26/00

CPC classification number: B81B3/001 ,  B81B2201/047 ,  B81C2201/0115 ,  G02B26/001

Abstract: A microelectromechanical device (MEMS) utilizing a porous electrode surface for reducing stiction is disclosed. In one embodiment, a microelectromechanical device is an interferometric modulator that includes a transparent electrode having a first surface; and a movable reflective electrode with a second surface facing the first surface. The movable reflective electrode is movable between a relaxed and actuated (collapsed) position. An aluminum layer is provided on either the first or second surface. The aluminum layer is then anodized to provide an aluminum oxide layer which has a porous surface. The porous surface, in the actuated position, decreases contact area between the electrodes, thus reducing stiction.

公开(公告)号：US07419581B2

公开(公告)日：2008-09-02

申请号：US10474968

申请日：2002-03-05

Applicant: Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

Inventor： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

IPC: B81B1/00 ,  H01L31/028 ,  H01L31/18

CPC classification number: B81B3/0083 ,  B81B2203/0315 ,  B81C2201/0114 ,  B81C2201/0115 ,  B81C2201/0178 ,  C25F3/12 ,  C25F3/14 ,  H01L21/306 ,  H01L21/3081

Abstract: A simple and cost-effective possibility is proposed for producing optically transparent regions (5, 6) in a silicon substrate (1), by the use of which both optically transparent regions of any thickness and optically transparent regions over a cavity in a silicon substrate are able to be implemented.For this purpose, first at least a specified region (5, 6) of the silicon substrate (1) is etched porous. Thereafter, the specified porous region (5, 6) of the silicon substrate (1) is oxidized.

Abstract translation: 提出了在硅衬底（1）中制造光学透明区域（5,6）的简单和成本有效的可能性，其中通过在硅衬底的空腔上使用任何厚度和光学透明区域的两个光学透明区域 能够实施。 为此目的，首先对硅衬底（1）的至少一个特定区域（5,6）进行多孔蚀刻。 此后，硅衬底（1）的规定的多孔区域（5,6）被氧化。

公开(公告)号：US07417784B2

公开(公告)日：2008-08-26

申请号：US11407470

申请日：2006-04-19

Applicant: Teruo Sasagawa ,  Lior Kogut

Inventor： Teruo Sasagawa ,  Lior Kogut

IPC: G02B26/00

CPC classification number: B81B3/001 ,  B81B2201/047 ,  B81C2201/0115 ,  G02B26/001

Abstract: A microelectromechanical device (MEMS) utilizing a porous electrode surface for reducing stiction is disclosed. In one embodiment, a microelectromechanical device is an interferometric modulator that includes a transparent electrode having a first surface; and a movable reflective electrode with a second surface facing the first surface. The movable reflective electrode is movable between a relaxed and actuated (collapsed) position. An aluminum layer is provided on either the first or second surface. The aluminum layer is then anodized to provide an aluminum oxide layer which has a porous surface. The porous surface, in the actuated position, decreases contact area between the electrodes, thus reducing stiction.

Abstract translation: 公开了一种利用多孔电极表面降低静摩擦力的微机电装置（MEMS）。 在一个实施例中，微机电装置是干涉式调制器，其包括具有第一表面的透明电极; 以及具有面向第一表面的第二表面的可移动反射电极。 可移动反射电极可在松弛和致动（折叠）位置之间移动。 在第一或第二表面上提供铝层。 然后将铝层阳极氧化以提供具有多孔表面的氧化铝层。 处于致动位置的多孔表面减小了电极之间的接触面积，从而减小了静电。

公开(公告)号：US07404332B2

公开(公告)日：2008-07-29

申请号：US10529420

申请日：2003-03-06

Applicant: Gerhard Lammel ,  Simon Armbruster ,  Frank Schaefer ,  Hubert Benzel

Inventor： Gerhard Lammel ,  Simon Armbruster ,  Frank Schaefer ,  Hubert Benzel

IPC: G01L7/00

CPC classification number: B81B7/0038 ,  B81C2201/0115

Abstract: A micromechanical component and a method for producing a micromechanical component are proposed, a hollow space and a region of porous silicon being provided, the region of porous silicon being provided for lowering the pressure prevailing in the hollow space.

Abstract translation: 提出了一种微机械部件和微机械部件的制造方法，提供了中空空间和多孔硅的区域，提供了多孔硅的区域，用于降低中空空间中的压力。

公开(公告)号：US20080030825A1

公开(公告)日：2008-02-07

申请号：US11869467

申请日：2007-10-09

Applicant: Teruo Sasagawa ,  Lior Kogut

Inventor： Teruo Sasagawa ,  Lior Kogut

IPC: G02F1/21

CPC classification number: B81B3/001 ,  B81B2201/047 ,  B81C2201/0115 ,  G02B26/001

Abstract: A microelectromechanical device (MEMS) utilizing a porous electrode surface for reducing stiction is disclosed. In one embodiment, a microelectromechanical device is an interferometric modulator that includes a transparent electrode having a first surface; and a movable reflective electrode with a second surface facing the first surface. The movable reflective electrode is movable between a relaxed and actuated (collapsed) position. An aluminum layer is provided on either the first or second surface. The aluminum layer is then anodized to provide an aluminum oxide layer which has a porous surface. The porous surface, in the actuated position, decreases contact area between the electrodes, thus reducing stiction.

Abstract translation: 公开了一种利用多孔电极表面降低静摩擦力的微机电装置（MEMS）。 在一个实施例中，微机电装置是干涉式调制器，其包括具有第一表面的透明电极; 以及具有面向第一表面的第二表面的可移动反射电极。 可移动反射电极可在松弛和致动（折叠）位置之间移动。 在第一或第二表面上提供铝层。 然后将铝层阳极氧化以提供具有多孔表面的氧化铝层。 处于致动位置的多孔表面减小了电极之间的接触面积，从而减小了静电。

公开(公告)号：US20070007241A1

公开(公告)日：2007-01-11

申请号：US11407988

申请日：2006-04-20

Applicant: Lisa DeLouise

Inventor： Lisa DeLouise

IPC: B31D3/00 ,  C09K13/00 ,  B44C1/22 ,  H01L21/461

CPC classification number: G01N33/54373 ,  B81B2201/0214 ,  B81C1/00626 ,  B81C2201/0115 ,  Y10T428/24273

Abstract: Etchant solutions for making porous semiconductor materials. Also disclosed are methods of making porous semiconductor materials, post etch treatments, and porous semiconductor materials produced by these methods.

Abstract translation: 用于制造多孔半导体材料的蚀刻剂解决方案。 还公开了制造多孔半导体材料，后蚀刻处理和通过这些方法生产的多孔半导体材料的方法。

公开(公告)号：US07037438B2

公开(公告)日：2006-05-02

申请号：US10070286

申请日：2001-04-20

Applicant: Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

Inventor： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

IPC: H01L21/302

CPC classification number: G01L9/0042 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00047 ,  B81C1/00595 ,  B81C2201/0115 ,  G01L9/0045 ,  H01L21/3063

Abstract: A method is for producing a semiconductor component, e.g., a multilayer semiconductor element, e.g., a micromechanical component, e.g., a pressure sensor, having a semiconductor substrate, e.g., made of silicon, and a semiconductor component produced according to the method. To reduce the production cost of such a semiconductor component, in a first step a first porous layer is produced in the semiconductor component, and in a second step a hollow or cavity is produced under or from the first porous layer in the semiconductor component, with the hollow or cavity capable of being provided with an external access opening.

Abstract translation: 一种用于制造半导体部件的方法，例如多层半导体元件，例如具有例如由硅制成的半导体衬底的微机械部件，例如压力传感器，以及根据该方法制造的半导体部件。 为了降低这种半导体部件的制造成本，在第一步骤中，在半导体部件中制造第一多孔层，在第二工序中，在半导体部件的第一多孔层的下面或从半导体部件的第一多孔层制造中空或空腔， 所述中空或空腔能够设置有外部通路口。

公开(公告)号：US20050181529A1

公开(公告)日：2005-08-18

申请号：US11011888

申请日：2004-12-13

Applicant: Hubert Benzel ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

Inventor： Hubert Benzel ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

IPC: B81B3/00 ,  H01L21/00 ,  H01L29/24 ,  H01L33/00

CPC classification number: B81C1/00158 ,  B81B3/007 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/0115 ,  B81C2201/0116 ,  B81C2201/0136

Abstract: A manufacturing method for a micromechanical semiconductor element includes providing on a semiconductor substrate a patterned stabilizing element having at least one opening. The opening is arranged such that it allows access to a first region in the semiconductor substrate, the first region having a first doping. Furthermore, a selective removal of at least a portion of the semiconductor material having the first doping out of the first region of the semiconductor substrate is provided. In addition, a membrane is produced above the first region using a first epitaxy layer applied on the stabilizing element. In a further method step, at least a portion of the first region is used to produce a cavity underneath the stabilizing element. In this manner, the present invention provides for the production of the patterned stabilizing element by means of a second epitaxy layer, which is applied on the semiconductor substrate.

Abstract translation: 微机电半导体元件的制造方法包括在半导体衬底上提供具有至少一个开口的图案化稳定元件。 开口被布置成使得其允许接近半导体衬底中的第一区域，第一区域具有第一掺杂。 此外，提供了选择性地去除半导体衬底的第一区域中具有第一掺杂的半导体材料的至少一部分。 此外，使用施加在稳定元件上的第一外延层，在第一区域上方产生膜。 在另一方法步骤中，第一区域的至少一部分用于在稳定元件下方产生空腔。 以这种方式，本发明提供了通过施加在半导体衬底上的第二外延层来生产图案化的稳定元件。

公开(公告)号：US06930366B2

公开(公告)日：2005-08-16

申请号：US10491193

申请日：2002-09-27

Applicant: Jyrki Kiihamäki

Inventor： Jyrki Kiihamäki

IPC: B81C1/00 ,  H01L21/762 ,  H01L29/84

CPC classification number: B81C1/00047 ,  B81C1/00412 ,  B81C2201/0115 ,  B81C2203/0145 ,  H01L21/76286

Abstract: The present publication discloses a method for forming cavities in prefabricated silicon wafers comprising a first silicon layer (1), a second monocrystalline silicon layer, or a so-called structural layer (3), oriented substantially parallel with said first silicon layer (1) and an insulating layer (2) situated between said first and second layers (1, 3). According to the method, in at least one of the conducting silicon layers (1, 3) are fabricated windows (4) extending through the thickness of the layer, and cavities are etched in the insulating layer (2) by means of etchants passed to the layer via said fabricated windows (4). According to the invention, subsequent to the fabrication step of the windows (4) and prior to the etching step, a thin porous layer (5) is formed on the surface to be processed such that the etchants can be passed through said porous layer into said cavities (6) being etched and, after the cavities (6) are etched ready, at least one supplementary layer (7) is deposited in order to render to the material of said porous layer impermeable to gases.

Abstract translation: 本公开公开了一种用于在预制硅晶片中形成空腔的方法，其包括基本上平行于所述第一硅层（1）取向的第一硅层（1），第二单晶硅层或所谓的结构层（3） 和位于所述第一和第二层（1,3）之间的绝缘层（2）。 根据该方法，至少一个导电硅层（1,3）是延伸穿过该层的厚度的制造窗（4），并且通过传递给绝缘层（2）的蚀刻剂在绝缘层（2）中蚀刻空腔 所述层经由所述制造的窗口（4）。 根据本发明，在窗口（4）的制造步骤之后并且在蚀刻步骤之前，在待加工的表面上形成薄的多孔层（5），使得蚀刻剂可以通过所述多孔层进入 所述腔（6）被蚀刻，并且在空腔（6）被蚀刻就绪之后，沉积至少一个辅助层（7），以使所述多孔层的材料不能透过气体。