公开(公告)号：JPWO2008004513A1

公开(公告)日：2009-12-03

申请号：JP2008523670

申请日：2007-07-02

Applicant: 財団法人大阪産業振興機構 ,  国立大学法人大阪大学

Inventor： 泰久 佐野 ,  泰久 佐野

IPC: H01L21/02 ,  H01L21/31 ,  H01L21/316

CPC classification number: H01L21/3065 ,  B81C1/00626 ,  B81C2201/0142

Abstract: 加工形状の制御を容易に行うことができる精密加工法及び精密加工装置を提供する。本発明の精密加工法は、被酸化物(10)の表面(10a)に所望の厚み分布で酸化部位(12)を形成する酸化工程と、酸化部位(12)を除去する除去工程とを含む精密加工法である。本発明の精密加工法によれば、例えば酸化工程において酸化部位(12)の厚みを計測しながら所望の厚みまで酸化を行うことにより、加工量(除去量)を精密に制御できる。これにより、加工形状の制御を容易に行うことができる。

公开(公告)号：US20230399754A1

公开(公告)日：2023-12-14

申请号：US18207569

申请日：2023-06-08

Applicant: ENTEGRIS, INC.

Inventor： Daniela White ,  Michael L. White ,  YoungMin Kim ,  Akshay Rajopadhye ,  Atanu K. Das

IPC: C23G1/18 ,  B81C1/00

CPC classification number: C23G1/18 ,  B81C1/00857 ,  B81C2201/0142 ,  B81C2201/0133

Abstract: The present disclosure relates to removal compositions for at least partially removing post-chemical mechanical polishing (post-CMP) residues from the surface of a microelectronic device. The removal compositions comprise an aqueous base composition and various molybdenum etching inhibitors that reduce the amount of molybdenum removed from the surface of the microelectronic device compared to the aqueous base composition.

公开(公告)号：US10002801B2

公开(公告)日：2018-06-19

申请号：US15597285

申请日：2017-05-17

Applicant: HITACHI, LTD.

Inventor： Misuzu Sagawa ,  Tetsufumi Kawamura

IPC: H01L21/00 ,  B81C1/00 ,  H01L21/66 ,  H01L21/306 ,  H01L21/67 ,  B81C99/00

CPC classification number: H01L22/20 ,  B81C1/00547 ,  B81C99/0025 ,  B81C99/0065 ,  B81C2201/0142 ,  H01L21/30604 ,  H01L21/67069 ,  H01L21/67253 ,  H01L21/67259

Abstract: The device manufacturing method includes a length measuring step (S5) of, on the basis of an observation target image of an SEM image taken from a direction having a predetermined angle from a direction perpendicular to a plane of a substrate, measuring the thickness of a target object, or the depth of etching, formed on the substrate. In addition, in the length measuring step, an etching angle made by a cross section of the etching and the direction perpendicular to the plane of the substrate is calculated from processing data of the target object, and the thickness of the target object or the depth of the etching is measured on the basis of the calculated etching angle.

公开(公告)号：US20180005906A1

公开(公告)日：2018-01-04

申请号：US15597285

申请日：2017-05-17

Applicant: HITACHI, LTD.

Inventor： Misuzu SAGAWA ,  Tetsufumi KAWAMURA

IPC: H01L21/66 ,  B81C1/00 ,  H01L21/306 ,  H01L21/67

CPC classification number: H01L22/20 ,  B81C1/00547 ,  B81C99/0025 ,  B81C99/0065 ,  B81C2201/0142 ,  H01L21/30604 ,  H01L21/67069 ,  H01L21/67253 ,  H01L21/67259

Abstract: The device manufacturing method includes a length measuring step (S5) of, on the basis of an observation target image of an SEM image taken from a direction having a predetermined angle from a direction perpendicular to a plane of a substrate, measuring the thickness of a target object, or the depth of etching, formed on the substrate. In addition, in the length measuring step, an etching angle made by a cross section of the etching and the direction perpendicular to the plane of the substrate is calculated from processing data of the target object, and the thickness of the target object or the depth of the etching is measured on the basis of the calculated etching angle.

公开(公告)号：US20170256416A1

公开(公告)日：2017-09-07

申请号：US15435838

申请日：2017-02-17

Applicant: Lam Research Corporation

Inventor： Andreas Fischer ,  Thorsten Lill ,  Richard Janek ,  John Boniface

IPC: H01L21/311 ,  C23F1/00 ,  H01J37/32

CPC classification number: H01L21/31122 ,  B81C2201/0135 ,  B81C2201/0142 ,  C23C16/0245 ,  C23F1/00 ,  C23F1/12 ,  C23F4/00 ,  H01J37/32009 ,  H01J37/32082 ,  H01J2237/334 ,  H01L21/30655 ,  H01L21/32136

Abstract: A method for performing atomic layer etching (ALE) on a substrate, including the following method operations: performing a surface modification operation on a surface of the substrate, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer; performing a removal operation on the substrate surface, the removal operation configured to remove the modified layer from the substrate surface, wherein removing the modified layer occurs via a ligand exchange reaction that is configured to volatilize the modified layer; performing, following the removal operation, a plasma treatment on the substrate surface, the plasma treatment configured to remove residues generated by the removal operation from the substrate surface, wherein the residues are volatilized by the plasma treatment; repeating the foregoing operations until a predefined thickness has been etched from the substrate surface.

公开(公告)号：US20170073224A1

公开(公告)日：2017-03-16

申请号：US15312146

申请日：2015-05-05

Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

Inventor： Yonggang HU ,  Guoping ZHOU

IPC: B81C1/00

CPC classification number: B81C1/00619 ,  B81C1/00 ,  B81C2201/0133 ,  B81C2201/0142

Abstract: An MEMS-based method for manufacturing a sensor comprises the steps of: forming a shallow channel (120) and a support beam (140) on a front surface of a substrate (100); forming a first epitaxial layer (200) on the front surface of the substrate (100) to seal the shallow channel (120); forming a suspended mesh structure (160) below the first epitaxial layer (200); and forming a deep channel (180) at a position on a back surface of the substrate (100) corresponding to the shallow channel (120), so that the shallow channel (120) is in communication with the deep channel (180). In the Method of manufacturing a MEMS-based sensor, when a shallow channel is formed on a front surface, a support beam of a mass block is formed, so the etching of a channel is easier to control, the process is snore precise. and the uniformity and the homogeneity of the formed support beam are better.

Abstract translation: 用于制造传感器的基于MEMS的方法包括以下步骤：在衬底（100）的前表面上形成浅沟道（120）和支撑梁（140）; 在所述衬底（100）的前表面上形成第一外延层（200）以密封所述浅沟道（120）; 在所述第一外延层（200）下方形成悬浮网状结构（160）; 以及在与所述浅通道（120）相对应的所述基板（100）的背表面上的位置处形成深通道（180），使得所述浅通道（120）与所述深通道（180）连通。 在制造基于MEMS的传感器的方法中，当在前表面上形成浅沟道时，形成质量块的支撑梁，因此通道的蚀刻更易于控制，工艺打鼾精确。 形成的支撑梁的均匀性和均匀性更好。

公开(公告)号：US08585916B2

公开(公告)日：2013-11-19

申请号：US12812986

申请日：2009-01-21

Applicant: Thomas D. Perroud ,  Kamlesh D. Patel ,  Robert J. Meagher

Inventor： Thomas D. Perroud ,  Kamlesh D. Patel ,  Robert J. Meagher

IPC: B31D3/00

CPC classification number: G01N33/5005 ,  B01F3/0807 ,  B01F5/0471 ,  B01F13/0059 ,  B01L3/502707 ,  B01L3/502753 ,  B01L3/502761 ,  B01L3/502776 ,  B01L3/502784 ,  B01L2200/0668 ,  B01L2300/0816 ,  B01L2300/0864 ,  B01L2400/0688 ,  B81B2201/058 ,  B81C1/00047 ,  B81C1/00087 ,  B81C1/00119 ,  B81C1/00404 ,  B81C2201/0133 ,  B81C2201/0142 ,  Y10T137/9464 ,  Y10T428/24479

Abstract: Disclosed herein are methods of making micropores of a desired height and/or width between two isotropic wet etched features in a substrate which comprises single-level isotropic wet etching the two features using an etchant and a mask distance that is less than 2× a set etch depth. Also disclosed herein are methods using the micropores and microfluidic devices comprising the micropores.

Abstract translation: 本文公开的方法是在衬底中的两个各向同性湿蚀刻特征之间制造所需高度和/或宽度的微孔的方法，其包括使用蚀刻剂和小于2×一组的掩模距离的单层各向同性湿蚀刻两个特征 蚀刻深度。 本文还公开了使用包括微孔的微孔和微流体装置的方法。

公开(公告)号：US20120074598A1

公开(公告)日：2012-03-29

申请号：US13248087

申请日：2011-09-29

Applicant: Franz-Peter Kalz

Inventor： Franz-Peter Kalz

IPC: H01L23/28 ,  B23K26/00

CPC classification number: B81C1/00801 ,  B23K2103/50 ,  B81C2201/0142 ,  B81C2201/0143

Abstract: In various embodiments, a chip may include a substrate; a coating, the coating covering the substrate at least partially and the coating being designed for being stripped at least partially by means of laser ablation; wherein between the substrate and the coating, a laser detector layer is arranged at least partially, the laser detector layer being designed for generating a detector signal for ending the laser ablation.

Abstract translation: 在各种实施例中，芯片可以包括衬底; 涂层，所述涂层至少部分地覆盖所述基底，并且所述涂层被设计为至少部分地通过激光烧蚀剥离; 其中在所述基底和所述涂层之间，至少部分地布置有激光检测器层，所述激光检测器层被设计为产生用于结束所述激光烧蚀的检测器信号。

公开(公告)号：US07900350B2

公开(公告)日：2011-03-08

申请号：US11373521

申请日：2006-03-10

Applicant: Taku Masai ,  Koji Sano

Inventor： Taku Masai ,  Koji Sano

IPC: H05K3/02

CPC classification number: H05K7/06 ,  B81B2207/097 ,  B81C1/00301 ,  B81C1/00571 ,  B81C2201/0133 ,  B81C2201/0142 ,  B81C2203/0109 ,  B81C2203/036 ,  H01L2924/16235 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49156

Abstract: A circuit element comprises a wiring board; the wiring board comprises a substrate and a wiring formed on the substrate, and a lid joined on the substrate containing a part of the wiring with a binder and making a sealed space above the substrate, wherein if a spot of the wiring joined with the lid by a binder is a spot of junction, a flank of both flanks of the wiring comprise bends in the spot of junction.

Abstract translation: 电路元件包括布线板; 布线板包括基板和形成在基板上的布线，以及盖子，其接合在基板上，该基板包含布线的一部分，并具有粘合剂并且在基板上方形成密封空间，其中如果布线与盖子接合的点 通过粘合剂是接合点，布线两侧的侧面包括在接合部位的弯曲部。

公开(公告)号：US20090218312A1

公开(公告)日：2009-09-03

申请号：US12467942

申请日：2009-05-18

Applicant: Philip D. Floyd ,  William J. Cummings

Inventor： Philip D. Floyd ,  William J. Cummings

IPC: B44C1/22

CPC classification number: H01L21/3065 ,  B81B2201/047 ,  B81C1/00531 ,  B81C2201/0142 ,  B81C2201/056 ,  G02B26/001 ,  H01L21/32135 ,  H01L21/67069

Abstract: Provided herein is an apparatus and a method useful for manufacturing MEMS devices. An aspect of the disclosed apparatus provides a substrate comprising an etchable material exposed to a solid-state etchant, wherein the substrate and the solid-state etchant are disposed in an etching chamber. In some embodiments, the solid state etchant is moved into close proximity to the substrate. In other embodiments, a configurable partition is between the substrate and the solid-state etchant is opened. The solid-state etchant forms a gas-phase etchant suitable for etching the etchable material. In some preferred embodiments, the solid-state etchant is solid xenon difluoride. The apparatus and method are advantageously used in performing a release etch in the fabrication of optical modulators.

Abstract translation: 本文提供了一种用于制造MEMS装置的装置和方法。 所公开的装置的一个方面提供了一种包括暴露于固态蚀刻剂的可蚀刻材料的衬底，其中衬底和固态蚀刻剂设置在蚀刻室中。 在一些实施例中，固态蚀刻剂移动到靠近基板的位置。 在其它实施例中，可配置的分隔件在基板之间并且打开固态蚀刻剂。 固态蚀刻剂形成适于蚀刻可蚀刻材料的气相蚀刻剂。 在一些优选的实施方案中，固态蚀刻剂是固体氙二氟化物。 该装置和方法有利地用于在光学调制器的制造中执行释放蚀刻。