公开(公告)号：US20130265730A1

公开(公告)日：2013-10-10

申请号：US13910340

申请日：2013-06-05

Applicant: THE AEROSPACE CORPORATION

Inventor： Henry Helvajian

IPC: H05K7/02

CPC classification number: H05K7/02 ,  B01J19/0093 ,  B01J2219/00824 ,  B01J2219/00835 ,  B01J2219/00853 ,  B01J2219/00941 ,  B01J2219/00948 ,  B01L3/502707 ,  B01L2300/0654 ,  B01L2300/0681 ,  B01L2300/0867 ,  B01L2300/0874 ,  B81B7/0077 ,  B81B2207/07 ,  B81B2207/092 ,  B81B2207/095 ,  B81B2207/096 ,  B81C99/0095 ,  B81C2201/0143 ,  B81C2201/0159 ,  G02B2006/12035 ,  G02B2006/12171 ,  H01P3/121 ,  H05K1/0306 ,  H05K1/16 ,  H05K1/162 ,  H05K1/165 ,  H05K3/0023 ,  H05K3/101 ,  Y10T29/42 ,  Y10T29/49002 ,  Y10T29/49005 ,  Y10T29/4908

Abstract: A photostructurable ceramic is processed using photostructuring process steps for embedding devices within a photostructurable ceramic volume, the devices may include one or more of chemical, mechanical, electronic, electromagnetic, optical, and acoustic devices, all made in part by creating device material within the ceramic or by disposing a device material through surface ports of the ceramic volume, with the devices being interconnected using internal connections and surface interfaces.

Abstract translation: 使用用于将器件嵌入可光可陶瓷陶瓷体积内的光学结构化工艺步骤来处理可光电陶瓷，该器件可以包括化学，机械，电子，电磁，光学和声学设备中的一种或多种，​​所有这些都部分地通过在 陶瓷或通过陶瓷体的表面端口设置器件材料，使用内部连接和表面接口互连这些器件。

公开(公告)号：US07655383B2

公开(公告)日：2010-02-02

申请号：US11510276

申请日：2006-08-24

Applicant: Petra Mela ,  Marcell Ott ,  Joachim Spatz ,  Blazej Gorzolnik ,  Martin Möller

Inventor： Petra Mela ,  Marcell Ott ,  Joachim Spatz ,  Blazej Gorzolnik ,  Martin Möller

IPC: G03F7/00

CPC classification number: B81C1/00206 ,  B81C2201/0159 ,  B82Y30/00 ,  G03F7/0047 ,  G03F7/033 ,  G03F7/038 ,  G03F7/0384 ,  G03F7/0751 ,  G03F7/165

Abstract: The present invention relates to a photochemical method for manufacturing nanometrically surface-decorated substrates, i.e. the creation of periodic and aperiodic patterns of highly ordered inorganic nanostructures on a substrate. This method is based on the selective photochemical modification of a self-assembled monolayer of metal compound loaded polymer core-shell systems on widely variable substrates. Light exposure through an appropriate mask causes selective chemical modification of the polymer core shell system. By subsequently placing the substrate in an appropriate chemical solution that eradicates the non-modified polymer, the pattern given by the used mask is reproduced on the surface. Finally, the remaining organic matrix is removed and metal salt is transformed to the single metal or metal oxide nanodots by means of gas plasma treatment.

Abstract translation: 本发明涉及一种用于制造纳米表面装饰的衬底的光化学方法，即在衬底上产生高度有序的无机纳米结构的周期性和非周期性图案。 该方法基于在广泛变化的基底上的金属化合物负载的聚合物核 - 壳体系的自组装单层的选择性光化学修饰。 通过适当的掩模的曝光导致聚合物核壳体系统的选择性化学改性。 通过随后将衬底放置在消除未改性聚合物的合适的化学溶液中，使用的掩模给出的图案在表面上再现。 最后，除去剩余的有机基质，通过气体等离子体处理将金属盐转变成单一金属或金属氧化物纳米点。

公开(公告)号：US20090324904A1

公开(公告)日：2009-12-31

申请号：US12524946

申请日：2008-02-04

Applicant: Thomas G. Mason

Inventor： Thomas G. Mason

IPC: B32B3/10 ,  G03F7/20

CPC classification number: B81C99/008 ,  B81C3/002 ,  B81C3/005 ,  B81C2201/0149 ,  B81C2201/0159 ,  B81C2203/057 ,  G03F7/40 ,  Y10T428/24802

Abstract: Producing composite structures includes dispersing a first plurality of objects, a second plurality of objects, and a third plurality of objects in a fluid, the third and second plurality of objects having an average maximum dimension that is smaller than the first plurality of objects The first plurality of objects comprise a first, a second, a third and a forth object, each having mating surface regions The first and second objects' mating surfaces are complimentary and the third and forth objects' mating surfaces are complementary The first and second object aggregate together in response to the dispersing of the second plurality of objects in the fluid due to a depletion attraction between the first and the second object The third and forth object aggregate together in response to dispersing the third plurality of objects in the fluid due to a depletion attraction between the third and the fourth object

Abstract translation: 生产复合结构包括将第一多个物体，第二多个物体和第三多个物体分散在流体中，第三和第二多个物体具有小于第一多个物体的平均最大尺寸。第一 多个物体包括具有配合表面区域的第一，第二，第三和第四物体。第一和第二物体的配合表面是互补的，并且第三和第四物体的配合表面是互补的。第一和第二物体聚集在一起 响应于由于第一和第二物体之间的耗尽引力而使第二多个物体在流体中的分散。第三和第四个物体响应于由于耗尽吸力而将第三多个物体分散在流体中而聚集在一起 在第三和第四个物体之间

公开(公告)号：US07368228B2

公开(公告)日：2008-05-06

申请号：US10742276

申请日：2003-12-19

Applicant: Michael C. Weisberg

Inventor： Michael C. Weisberg

IPC: G03F7/00

CPC classification number: G03F7/00 ,  B33Y10/00 ,  B81C1/00492 ,  B81C2201/0159 ,  B81C2201/0197 ,  G03F7/0035

Abstract: A method of creating a microelectromechanical systems (MEMS) device includes applying a layer of photoresist to a lower layer to create a multilayer MEMS device. The method includes transferring the layer of photoresist to the lower layer. The method can also include spincoating the photoresist onto a release layer, softbaking the spincoated photoresist to at least partially dry it, transferring the photoresist to form a layer of the multilayer MEMS device, and exposing the photoresist to light to crosslink it. The multilayer MEMS device includes a plurality of layers of photoresist.

Abstract translation: 创建微机电系统（MEMS）装置的方法包括将光致抗蚀剂层施加到下层以产生多层MEMS器件。 该方法包括将光致抗蚀剂层转移到下层。 该方法还可以包括将光致抗蚀剂旋涂到剥离层上，将旋涂的光致抗蚀剂软化至少部分地干燥，转移光致抗蚀剂以形成多层MEMS器件的层，并将光致抗蚀剂曝光以使其交联。 多层MEMS器件包括多层光致抗蚀剂。

公开(公告)号：US20070003839A1

公开(公告)日：2007-01-04

申请号：US10567889

申请日：2004-08-05

Applicant: Marc Rabarot ,  Mathieu Kipp ,  Christophe Kopp

Inventor： Marc Rabarot ,  Mathieu Kipp ,  Christophe Kopp

IPC: G03F1/00

CPC classification number: B81C1/00103 ,  B81C2201/0159 ,  G03F7/70216

Abstract: The invention concerns a photolithography fabrication method enabling production of patterns in a photosensitive resin layer (601) placed on a substrate (600). The patterns (607) comprise flanks (608) inclined relative to a normal ({right arrow over (n)}) relative to the principal plane of the substrate and which have an angle of inclination (θ) far greater to that of the patterns obtained according to the prior art. The invention also concerns a device allowing said method to be executed.

Abstract translation: 本发明涉及能够在放置在基板（600）上的感光性树脂层（601）中制造图形的光刻制造方法。 图案（607）包括相对于法线倾斜的侧面（608）（相对于基底的主平面（{n）的向右箭头），并且具有比根据 本发明还涉及允许执行所述方法的装置。

公开(公告)号：US20060084012A1

公开(公告)日：2006-04-20

申请号：US10965279

申请日：2004-10-14

Applicant: Ralph Nuzzo ,  William Childs ,  Michael Motala ,  Keon Lee

Inventor： Ralph Nuzzo ,  William Childs ,  Michael Motala ,  Keon Lee

IPC: G03F7/00

CPC classification number: G03F7/0002 ,  B81C1/0038 ,  B81C2201/0159 ,  B81C2201/0191 ,  B81C2203/038 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/34 ,  G03F7/346

Abstract: A method of making a microstructure includes selectively activating a portion of a surface of a silicon-containing elastomer, contacting the activated portion with a substance, and bonding the activated portion and the substance, such that the activated portion of the surface and the substance in contact with the activated portion are irreversibly attached. The selective activation may be accomplished by positioning a mask on the surface of the silicon-containing elastomer, and irradiating the exposed portion with UV radiation.

Abstract translation: 制造微结构的方法包括选择性地激活含硅弹性体的表面的一部分，使活化部分与物质接触，并且将活化部分和物质接合，使得表面的活化部分和物质的活性部分 与活化部分的接触不可逆地附着。 选择性激活可以通过将掩模定位在含硅弹性体的表面上，并用UV辐射照射暴露部分来实现。

公开(公告)号：US06790698B2

公开(公告)日：2004-09-14

申请号：US09954861

申请日：2001-09-18

Applicant: Michael F. Miller ,  Minh Van Le ,  Christopher C. Cook ,  Dale C. Flanders ,  Steven F. Nagle

Inventor： Michael F. Miller ,  Minh Van Le ,  Christopher C. Cook ,  Dale C. Flanders ,  Steven F. Nagle

IPC: H01L2100

CPC classification number: B81B3/0083 ,  B81B2201/042 ,  B81B2201/047 ,  B81C1/0038 ,  B81C2201/0159 ,  B81C2201/053 ,  B81C2201/056 ,  G02B26/001

Abstract: A process for patterning dielectric layers of the type typically found in optical coatings in the context of MEMS manufacturing is disclosed. A dielectric coating is deposited over a device layer, which has or will be released, and patterned using a mask layer. In one example, the coating is etched using the mask layer as a protection layer. In another example, a lift-off process is shown. The primary advantage of photolithographic patterning of the dielectric layers in optical MEMS devices is that higher levels of consistency can be achieved in fabrication, such as size, location, and residual material stress. Competing techniques such as shadow masking yield lower quality features and are difficult to align. Further, the minimum feature size that can be obtained with shadow masks is limited to ˜100 &mgr;m, depending on the coating system geometry, and they require hard contact with the surface of the wafer, which can lead to damage and/or particulate contamination.

Abstract translation: 公开了一种用于在MEMS制造的上下文中通常在光学涂层中发现的类型的介电层图案的工艺。 电介质涂层沉积在器件层上，器件层已经或将被释放，并使用掩模层进行图案化。 在一个实例中，使用掩模层作为保护层来蚀刻涂层。 在另一示例中，示出了剥离过程。 光学MEMS器件中电介质层的光刻图案的主要优点是可以在诸如尺寸，位置和残余材料应力的制造中实现更高水平的稠度。 诸如阴影掩蔽的竞争技术产生较低的质量特征并且难以对准。 此外，根据涂层系统的几何形状，使用荫罩可获得的最小特征尺寸限制在〜100μm，并且它们需要与晶片的表面硬接触，这可能导致损坏和/或微粒污染。

公开(公告)号：US20040028327A1

公开(公告)日：2004-02-12

申请号：US10620348

申请日：2003-07-17

Applicant: BinOptics Corporation

Inventor： Alex Behfar ,  Alfred T. Schremer ,  Cristian B. Stagarescu

IPC: G02B006/26 ,  G02B006/42 ,  G02B006/10

CPC classification number: G02B6/12002 ,  B81B2201/047 ,  B81C99/008 ,  B81C2201/0159 ,  G02B6/13 ,  G02B6/4204 ,  G02B6/4249 ,  G03F7/0037 ,  Y10S438/948 ,  Y10S438/949 ,  Y10S438/95

Abstract: Three-dimensional structures of arbitrary shape are fabricated on the surface of a substrate through a series of processing steps wherein a monolithic structure is fabricated in successive layers. A first layer of photoresist material is spun onto a substrate surface and is exposed in a desired pattern corresponding to the shape of a final structure, at a corresponding cross-sectional level in the structure. The layer is not developed after exposure; instead, a second layer of photoresist material is deposited and is also exposed in a desired pattern. Subsequent layers are spun onto the top surface of prior layers and exposed, and upon completion of the succession of layers each defining corresponding levels of the desired structure, the layers are all developed at the same time leaving the three-dimensional structure.

Abstract translation: 通过一系列处理步骤在基板的表面上制造任意形状的三维结构，其中单片结构以连续的层制造。 将第一层光致抗蚀剂材料旋转到基底表面上，并以对应于最终结构的形状的所需图案以结构中相应的横截面水平曝光。 暴露后层不发达; 相反，沉积第二层光致抗蚀剂材料并且也以期望的图案曝光。 随后的层被旋转到现有层的顶部表面上并暴露，并且在完成相继层级的各层限定所需结构的相应水平时，所有层都同时显现出离开三维结构。

公开(公告)号：US06454987B1

公开(公告)日：2002-09-24

申请号：US09602273

申请日：2000-06-23

Applicant: Takanori Katoh ,  Yanping Zhang

Inventor： Takanori Katoh ,  Yanping Zhang

IPC: B29C5916

CPC classification number: B81C1/00126 ,  B32B3/02 ,  B32B27/06 ,  B81C2201/0159 ,  G03F7/00 ,  G03F7/075 ,  G03F7/09 ,  G03F7/2039 ,  Y10S430/167 ,  Y10S430/168

Abstract: A laminated substrate is prepared, the laminated substrate having two layers including a first film and a second film in tight contact with the first film, the second film being made of a material capable of being etched with synchrotron radiation light. A mask member with a pattern is disposed in tight contact with the surface of the second film of the laminated structure or at a distance from the surface of the second film, the pattern of the mask member being made of a material not transmitting the synchrotron radiation light. The synchrotron radiation light is applied on a partial surface area of the second film via the mask member to etch the second film where the synchrotron radiation light is applied and to expose a partial surface area of the first film on the bottom of an etched area.

公开(公告)号：US20020048839A1

公开(公告)日：2002-04-25

申请号：US09954861

申请日：2001-09-18

Applicant: AXSUN Technologies, Inc.

Inventor： Michael F. Miller ,  Minh Van Le ,  Christopher C. Cook ,  Dale C. Flanders ,  Steven F. Nagle

IPC: H01L021/00

CPC classification number: B81B3/0083 ,  B81B2201/042 ,  B81B2201/047 ,  B81C1/0038 ,  B81C2201/0159 ,  B81C2201/053 ,  B81C2201/056 ,  G02B26/001

Abstract: A process for patterning dielectric layers of the type typically found in optical coatings in the context of MEMS manufacturing is disclosed. A dielectric coating is deposited over a device layer, which has or will be released, and patterned using a mask layer. In one example, the coating is etched using the mask layer as a protection layer. In another example, a lift-off process is shown. The primary advantage of photolithographic patterning of the dielectric layers in optical MEMS devices is that higher levels of consistency can be achieved in fabrication, such as size, location, and residual material stress. Competing techniques such as shadow masking yield lower quality features and are difficult to align. Further, the minimum feature size that can be obtained with shadow masks is limited to null100 nullm, depending on the coating system geometry, and they require hard contact with the surface of the wafer, which can lead to damage and/or particulate contamination.

Abstract translation: 公开了一种用于在MEMS制造的上下文中通常在光学涂层中发现的类型的介电层图案的工艺。 电介质涂层沉积在器件层上，器件层已经或将被释放，并使用掩模层进行图案化。 在一个实例中，使用掩模层作为保护层来蚀刻涂层。 在另一示例中，示出了剥离过程。 光学MEMS器件中电介质层的光刻图案的主要优点是可以在诸如尺寸，位置和残余材料应力的制造中实现更高水平的稠度。 诸如阴影掩蔽的竞争技术产生较低的质量特征并且难以对准。 此外，根据涂层系统的几何形状，使用荫罩可获得的最小特征尺寸限制在〜100μm，并且它们需要与晶片的表面硬接触，这可能导致损坏和/或微粒污染。