Abstract:
광특성측정시스템은빛을발하는장치로부터의광량을측정하는측정부를포함하되, 상기측정부는복수의센서를포함할수 있다. 또한, 일실시예에따른광특성측정시스템은상기복수의센서의측정값을보정하는보정부를더 포함할수 있다. 이로써광량측정시간을단축시킬수 있고, 신뢰성이향상된측정결과를얻을수 있다.
Abstract:
본 발명은 수광 광량을 더욱 정확하게 반영한 값을 취득하는 것을 과제로 한다. 본 발명에 따른 광센서 회로는 프레임 개구부로의 수광 광량에 따른 펄스 폭의 신호(Q)를 출력하는 제 1 광센서(10)와, 제 1 광센서(10)의 근방에 설치되고, 제 1 광센서(10)와 동일 타이밍으로 검출 동작을 행하는 동시에 프레임에 의해 차광된 수광면으로의 수광 광량에 따른 펄스 폭의 신호(Qref)를 출력하는 제 2 광센서(20)와, 신호(Q)와 신호(Qref)의 배타적 논리합 신호(Diff)를 출력하는 EX-OR 회로(32)를 갖는다. 액정 표시 패널, 광센서, 차분 산출 회로, 수광 소자, 외광
Abstract:
PURPOSE: A layout structure of a readout IC for detecting thermal image is provided to measure the motion characteristic of unit cells over 78,000, and array the digital blocks to minimize the influence to infrared analog signals, thereby obtaining high resolution of thermal image. CONSTITUTION: A layout structure of a readout IC for detecting thermal image includes a cell array(100) in which infrared readout cells are arrayed as matrix shape, row selecting switches(130) installed in output terminals of the readout cells and serially outputting thermal image sensing signals of the cells according to the row selecting signal, a row shift register(200) decoding row address according to the external controlling signal and thereafter generating the signal for selecting a specific switch in the row selecting switches, a low pass filter part(300) eliminating the signal of high frequency band by receiving thermal image signal output through the row selecting switch, a column buffer part(400) amplifying the signal output from the low pass filter part, a column shift register(500) decoding column address according to the external controlling signal and selecting a specific switch in predetermined column selecting switches, thereafter shifting and outputting the thermal image signals output from the column buffer part through the selected column switch, and an output buffer(700) amplifying the thermal image signals and thereafter serially outputting the amplified thermal image signals to the outside of a chip.
Abstract:
광검출기는제1 금속산화물의정공수송전자차단층 및제2 금속산화물의전자수송정공차단층 사이에위치한반전도성무기나노입자의광활성층을갖는다. 나노입자는스펙트럼의적어도적외선영역의전자기방사선에반응한다. 제1 금속산화물은 NiO일수 있고, 제2 금속산화물은 ZnO 또는 TiO일수 있다. 금속산화물층은심지어는광검출기주위의캡슐화코팅의부재하에도광검출기가공기중에서안정하게한다. 광검출기는 P-I-N 구조를갖는다.
Abstract:
A differential pyroelectric infrared detector circuit formed by connecting a pyroelectric crystal to two separate impedance conversion circuits. The separate circuits derive two low impedance outputs which are connected to a differential or instrumentation amplifier. The circuit will eliminate electronic perturbations from outside sources such as line frequency interference or notice from an external but nearby oscillator which may be used to operate a microprocessor circuit, and other sources of electronic noise. The two outputs when connected differentially also have an output which is a factor of two greater than a normal standard single ended device, but also only produce noise which is only the square root of 2 or greater. The circuit additionally increased the signal to noise of the detector by a factor of the square root of the increase in signal or by about 1.41 times the standard single ended device.