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    TARGET, ADAPTED TO AN INDIRECT COOLING DEVICE, HAVING A COOLING PLATE
    81.
    发明申请
    TARGET, ADAPTED TO AN INDIRECT COOLING DEVICE, HAVING A COOLING PLATE 审中-公开
    适用于具有冷却板的间接冷却装置的目标

    公开(公告)号：US20160172166A1

    公开(公告)日：2016-06-16

    申请号：US14902577

    申请日：2014-06-30

    Applicant: OERLIKON SURFACE SOLUTIONS AG, TRÜBBACH

    Inventor： Denis Kurapov ,  Siegfried Krassnitzer

    IPC: H01J37/34

    CPC classification number: H01J37/3417 ,  C23C14/3407 ,  H01J37/3423 ,  H01J37/3435 ,  H01J37/3497 ,  H01J2237/002 ,  H01J2237/081 ,  H01J2237/3322

    Abstract: A device for cooling a target, having a component that includes a cooling duct and having an additional thermally conductive plate that is detachably fastened to the cooling side of the component, the cooling side being the side on which the cooling duct exerts its cooling action, characterized in that between the additional thermally conductive plate and the cooling side of the component, a first self-adhesive carbon film is provided, which is extensively and self-adhesively glued to the one side of the additional thermally conductive plate that faces the cooling side.

    Abstract translation: 一种用于冷却目标的装置，具有包括冷却管道的部件，并且具有可拆卸地紧固到部件的冷却侧的附加导热板，冷却侧是冷却管道施加其冷却作用的一侧， 其特征在于，在所述附加导热板和所述部件的冷却侧之间，设置有第一自粘性碳膜，所述第一自粘性碳膜被广泛且自粘合地粘附到所述附加导热板的面向冷却侧的一侧 。

    PARTIAL SPRAY REFURBISHMENT OF SPUTTERING TARGETS
    83.
    发明申请
    PARTIAL SPRAY REFURBISHMENT OF SPUTTERING TARGETS 有权
    溅射目标的部分喷雾再造

    公开(公告)号：US20160160341A1

    公开(公告)日：2016-06-09

    申请号：US14908396

    申请日：2014-07-31

    Applicant: H.C. Stark Inc.

    Inventor： Steven A. MILLER

    IPC: C23C14/34 ,  C23C24/04 ,  H01J37/34

    CPC classification number: C23C14/3414 ,  C23C24/04 ,  H01J37/3417 ,  H01J37/3426 ,  H01J2237/081 ,  H01J2237/332

    Abstract: In various embodiments, eroded sputtering targets are partially refurbished by spray-depositing particles of target material to at least partially fill certain regions (e.g., regions of deepest erosion) without spray-deposition within other eroded regions (e.g., regions of less erosion). The partially refurbished sputtering targets may be sputtered after the partial refurbishment without substantive changes in sputtering properties (e.g., sputtering rate) and/or properties of the sputtered films.

    Abstract translation: 在各种实施例中，侵蚀的溅射靶通过喷射沉积目标材料的颗粒而部分地翻新，以至少部分地填充某些区域（例如，最深蚀刻的区域），而不会在其它侵蚀区域（例如较少侵蚀的区域）内进行喷雾沉积。 部分翻新的溅射靶可以在部分翻新之后溅射，而溅射性能（例如，溅射速率）和/或溅射膜的性质没有实质性的变化。

    CLOSED DRIFT MAGNETIC FIELD ION SOURCE APPARATUS CONTAINING SELF-CLEANING ANODE AND A PROCESS FOR SUBSTRATE MODIFICATION THEREWITH
    85.
    发明申请
    CLOSED DRIFT MAGNETIC FIELD ION SOURCE APPARATUS CONTAINING SELF-CLEANING ANODE AND A PROCESS FOR SUBSTRATE MODIFICATION THEREWITH 审中-公开
    包含自清洁阳极的封闭式磁场离子源装置及其基板改性方法

    公开(公告)号：US20160027608A1

    公开(公告)日：2016-01-28

    申请号：US14754381

    申请日：2015-06-29

    Applicant: General Plasma, Inc.

    Inventor： John Madocks

    IPC: H01J37/08 ,  H01J37/34

    CPC classification number: H01J37/08 ,  H01J27/143 ,  H01J37/3053 ,  H01J37/317 ,  H01J37/32862 ,  H01J37/3405 ,  H01J2237/081

    Abstract: A process for modifying a surface of a substrate is provided that includes supplying electrons to an electrically isolated anode electrode of a closed drift ion source. The anode electrode has an anode electrode charge bias that is positive while other components of the closed drift ion source are electrically grounded or support an electrical float voltage. The electrons encounter a closed drift magnetic field that induces ion formation. Anode contamination is prevented by switching the electrode charge bias to negative in the presence of a gas, a plasma is generated proximal to the anode electrode to clean deposited contaminants from the anode electrode. The electrode charge bias is then returned to positive in the presence of a repeat electron source to induce repeat ion formation to again modify the surface of the substrate. An apparatus for modification of a surface of a substrate by this process is provided.

    Abstract translation: 提供了一种用于修改衬底表面的方法，其包括向闭合漂移离子源的电隔离的阳极提供电子。 阳极电极具有正极的阳极电极偏压，而闭合漂移离子源的其它部件电接地或支持电浮动电压。 电子遇到诱发离子形成的闭合漂移磁场。 通过在存在气体的情况下将电极充电偏压切换为负来防止阳极污染，在阳极电极附近产生等离子体以清除来自阳极电极的沉积的污染物。 然后在存在重复电子源的情况下将电极充电偏压返回到正值，以引起重复的离子形成，以再次改变衬底的表面。 提供了一种通过该方法修改基板的表面的装置。

    Ion Source
    87.
    发明申请
    Ion Source 失效
    离子源

    公开(公告)号：US20080067411A1

    公开(公告)日：2008-03-20

    申请号：US11780651

    申请日：2007-07-20

    Applicant: Shigehiro Nishino ,  Ryoichi Ono

    Inventor： Shigehiro Nishino ,  Ryoichi Ono

    IPC: H01J27/00

    CPC classification number: H01J27/14 ,  H01J27/02 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/032 ,  H01J2237/038 ,  H01J2237/061 ,  H01J2237/081

    Abstract: It is a technical challenge to provide a small-sized ion source excellent in operability. An ion source of the present invention includes: a cylindrical insulation tube (2) opened upward and opened at part of its lower surface; a plurality of hollow cylindrical permanent magnets (3), provided on the outer peripheral surface of the insulation tube to be arranged in a row in the axial direction of the insulation tube; a gas supplying means (34, 35, 20) for supplying gas into the insulation tube; a cathode electrode, at the tip end of which a fitting unit (19) for fitting of a solid material (18) there to is formed; an annular anode electrode (5), which is fitted to an opening in the lower surface of the insulation tube; an upper frame (6), which blocks the upper portion of the insulation tube and suspends the cathode electrode so as to allow the fitting unit to approach the anode electrode; and a lower frame (7), in which an extraction port (37) is formed for extracting ions emitted from the anode electrode, and on which the insulation tube is mounted.

    Abstract translation: 提供极佳的可操作性的小型离子源是技术挑战。 本发明的离子源包括：向上敞开并在其下表面的一部分开口的圆柱形绝缘管（2） 多个中空圆柱形永磁体（3），设置在所述绝缘管的外周面上，以在所述绝缘管的轴向上排成一列; 用于将气体供应到所述绝缘管中的气体供给装置（34,35,20） 阴极，其顶端形成有用于将固体材料（18）配合到其上的嵌合单元（19）; 环形阳极电极（5），其安装在绝缘管的下表面的开口处; 上部框架（6），其阻挡绝缘管的上部并悬挂阴极电极，以使装配单元接近阳极电极; 和下框架（7），其中形成用于提取从阳极发射的离子的提取口（37），并且安装有绝缘管。

    Sputter ion source for boron and other targets
    88.
    发明授权
    Sputter ion source for boron and other targets 失效
    硼和其他靶材的溅射离子源

    公开(公告)号：US06352626B1

    公开(公告)日：2002-03-05

    申请号：US09550360

    申请日：2000-04-19

    Applicant: Heimart von Zweck

    Inventor： Heimart von Zweck

    IPC: C23C1434

    CPC classification number: H01J37/08 ,  H01J27/20 ,  H01J2237/081

    Abstract: The present invention relates to an improved ion source comprising a magnetron and cathode in a first housing and a cold cathode in a second housing. The second housing generally comprises a Penning cell to collimate an ion beam arising from the first housing. This arrangement provides an ion source capable of ejecting sputtered ions of the cold cathode magnetron discharge into a highly collimated, positive ion beam having low emittance angles. The invention also provides a cold cathode target for use in an ion source, and in particular, to an ion source having single or multiple targets of desired materials and/or dimensions to provide a rich source of boron ions in a manner allowing operation of the ion source free of producing significant toxic effects or corrosion. The invention also relates to a cold cathode target comprising a boron-containing material selected from the group consisting of a boron alloy, a boride, and mixtures thereof. The invention also relates to ion sources which comprise a single solid cathode disc or a multiple or array of solid cathode discs, or having a bore through on axis, in which the cathode is made of conductive materials such as metals, alloys and metal compounds. Example materials include indium, aluminum and indium phosphide. The ion source can be a source of positive gas ions.

    Abstract translation: 本发明涉及一种改进的离子源，其包括第一壳体中的磁控管和阴极以及第二壳体中的冷阴极。 第二壳体通常包括用于准直由第一壳体产生的离子束的Penning单元。 这种布置提供了能够将冷阴极磁控管放电的溅射离子喷射到具有低发射角的高准直正离子束的离子源。 本发明还提供了一种用于离子源的冷阴极靶，特别是涉及具有所需材料和/或尺寸的单个或多个靶的离子源，以提供丰富的硼离子源，使得 离子源不产生显着的毒性作用或腐蚀。 本发明还涉及包含选自硼合金，硼化物及其混合物的含硼材料的冷阴极靶。 本发明还涉及离子源，其包括单个固体阴极盘或多个或阵列的固体阴极盘，或具有穿过轴的孔，其中阴极由诸如金属，合金和金属化合物的导电材料制成。 示例材料包括铟，铝和磷化铟。 离子源可以是正气体离子的来源。

    METHODS AND APPARATUS FOR DETERMINING, USING, AND INDICATING ION BEAM WORKING PROPERTIES
    89.
    发明申请
    METHODS AND APPARATUS FOR DETERMINING, USING, AND INDICATING ION BEAM WORKING PROPERTIES 审中-公开
    用于确定，使用和指示离子束工作特性的方法和装置

    公开(公告)号：WO2016061175A1

    公开(公告)日：2016-04-21

    申请号：PCT/US2015/055444

    申请日：2015-10-14

    Applicant: HUNT, John Andrew ,  COYLE, Steven Thomas ,  HASSEL-SHEARER, Michael Patrick ,  HOSMAN, Thijs C.

    Inventor： HUNT, John Andrew ,  COYLE, Steven Thomas ,  HASSEL-SHEARER, Michael Patrick ,  HOSMAN, Thijs C.

    IPC: H01J37/20

    CPC classification number: H01J37/243 ,  G01N1/44 ,  H01J37/08 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305 ,  H01J37/3056 ,  H01J37/3178 ,  H01J2237/081 ,  H01J2237/24514 ,  H01J2237/24535 ,  H01J2237/30483 ,  H01J2237/31 ,  H01J2237/3151 ,  H01J2237/316

    Abstract: Disclosed are methods and apparatus for determining, using, and indicating ion beam working properties in an apparatus that performs ion beam sample preparation and coating. A beam probe may be used to measure one or more working properties of a portion of the ion beam, generating a probe signal in a known relationship to the one or more working properties. The beam probe may generate a signal in a known relationship to one or more properties of a sputtered coating reaching a sample. The ion beam apparatus may modulate one or more characteristics of the ion beam in response to receiving a signal from the beam probe. The probe signal may be used in the ion beam apparatus to indicate one or more ion beam working properties. Related apparatus and methods also permit the measurement of the known relationship between probe signal and ion beam working properties.

    Abstract translation: 公开了用于在执行离子束样品制备和涂覆的装置中确定，使用和指示离子束工作特性的方法和装置。 光束探测器可用于测量离子束的一部分的一个或多个工作特性，产生与一个或多个工作特性已知关系的探测信号。 光束探测器可以产生与已达到样品的溅射涂层的一个或多个特性有已知关系的信号。 离子束装置可以响应于接收来自束探针的信号而调制离子束的一个或多个特性。 探针信号可以用于离子束装置中以指示一个或多个离子束工作特性。 相关的装置和方法还允许测量探测信号和离子束工作特性之间的已知关系。

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