公开(公告)号：WO1997016843A1

公开(公告)日：1997-05-09

申请号：PCT/US1996017289

申请日：1996-10-28

Applicant: ADVANCED VISION TECHNOLOGIES, INC. ,  POTTER, Michael, D.

Inventor： ADVANCED VISION TECHNOLOGIES, INC.

IPC: H01J01/62

CPC classification number: H05B33/12 ,  H01J61/00

Abstract: Microelectronic light-emitting device (10) made with dual lateral thin-film emitters (35, 40) parallel to substrate (20). Each emitter has an emitting blade edge (110, 115). Opposed emitters for two opposite sign carriers are provided. Phosphor region (50) extends between the two emitters and contacts them. When a bias voltage is applied, electrons are injected into the phosphor from one emitter and holes are injected from the other. In the fabrication process these steps are performed: an insulating substrate is provided (S1, S2); an ultra-thin conductive emitter film is deposited and patterned (S3); an insulating layer is deposited over the emitter film (S4); conductive contacts are made through the insulating layer to the emitter film (S5, S6); a trench opening is etched through the insulating layer and emitter film, thus forming two emitting edges of two emitters (S7); phosphor is deposited into the trench opening and planarized (S8, S9); means are provided for applying an electrical bias to the two emitter contacts (S10).

Abstract translation: 微电子发光器件（10）由平行于衬底（20）的双重横向薄膜发射器（35,40）制成。 每个发射器具有发射叶片边缘（110,115）。 提供了两个相对的标志载体的反射发射器。 磷光体区域（50）在两个发射器之间延伸并与它们接触。 当施加偏置电压时，电子从一个发射器注入到荧光体中，并且从另一个发射器注入空穴。 在制造过程中，进行这些步骤：提供绝缘基板（S1，S2）; 沉积超薄的导电发射体膜并构图（S3）; 绝缘层沉积在发射极膜上（S4）; 通过绝缘层向发射极膜制造导电触点（S5，S6）; 通过绝缘层和发射极膜蚀刻沟槽开口，从而形成两个发射极的两个发射边缘（S7）; 磷光体沉积到沟槽开口并平坦化（S8，S9）; 提供了用于向两个发射极触点施加电偏压的装置（S10）。

公开(公告)号：WO1996038854A1

公开(公告)日：1996-12-05

申请号：PCT/US1996008254

申请日：1996-05-31

Applicant: ADVANCED VISION TECHNOLOGIES, INC. ,  POTTER, Michael, D.

Inventor： ADVANCED VISION TECHNOLOGIES, INC.

IPC: H01J01/62

CPC classification number: H01J3/022 ,  H01J2201/30423 ,  H01J2209/385

Abstract: A lateral field-emission device (10) has a lateral emitter (100) substantially parallel to a substrate (20) and has a simplified anode structure (70). The anode's top surface is precisely spaced apart from the plane of the lateral emitter and receives electrons emitted by field emission from the edge of the lateral emitter cathode, when a suitable bias voltage is applied. The device may be configured as a diode, or as a triode, tetrode, etc. having control electrodes (140) positioned to allow control of current from the emitter to the anode by an electrical signal applied to the control electrode.

Abstract translation: 横向场发射器件（10）具有基本上平行于衬底（20）的侧向发射器（100）并且具有简化的阳极结构（70）。 当施加合适的偏置电压时，阳极的顶表面与横向发射器的平面精确地间隔开并且接收从侧向发射极阴极的边缘发射的电场。 该器件可以被配置为具有控制电极（140）的二极管或三极管四极管等，该控制电极定位成允许通过施加到控制电极的电信号来控制从发射极到阳极的电流。

公开(公告)号：WO1998010459A1

公开(公告)日：1998-03-12

申请号：PCT/US1997015374

申请日：1997-08-30

Applicant: ADVANCED VISION TECHNOLOGIES, INC. ,  POTTER, Michael, D.

Inventor： ADVANCED VISION TECHNOLOGIES, INC.

IPC: H01J09/227

CPC classification number: H01J9/227 ,  C09K11/672 ,  C09K11/682 ,  C09K11/693 ,  C09K11/7702 ,  C09K11/7708

Abstract: Phosphor compositions are prepared by treating metal oxides or mixed-metal oxides with refractory metals to form cathodoluminescent phosphors stimulatable by electrons of very low energy. The phosphors comprise 90 % to 100 % of a mixed metal oxide MxTyOz (where M is a metal selected from Zn, Sn, In, Cu, and combinations thereof; T is a refractory metal selected from Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, and combinations thereof; and O is Oxygen, x, y, and z being chosen such that z is at most stoichiometric for MxTyOz) and 0 % to 10 % of a dopant comprising a substance selected from a rare earth element of the lanthanide series, Mn, Cr, and combinations thereof, or stoichiometrically excess Zn, Cu, Sn, or In. A blue-light-emitting phosphor based on ZnO treated with Ta2O5 or Ta to form Ta2Zn3O8 is characterized by CIE 1931 chromaticity values x and y, where x is between about 0.14 and 0.20 and y is between about 0.05 and 0.15. In preferred embodiments, a process is specially adapted for forming the phosphor in an electrically-conductive thin-film or surface-layer form in situ during fabrication of displays. A preferred in situ process has an integrated etch stop, which precisely defines the depth of an opening in a field-emission display structure utilizing the low-energy-electron excited phosphor. A field-emission display comprises cells, each having a field-emission cathode and an anode comprising at least one cathodoluminescent phosphor. Arrangements of various color phosphors may be made by selective deposition of suitable dopants. The display cell structures may also have gate elements for controlling electron current flowing to the anode and its phosphor when suitable voltages are applied.

Abstract translation: 通过用难熔金属处理金属氧化物或混合金属氧化物以形成可由非常低能量的电子刺激的阴极发光荧光体来制备荧光体组合物。 荧光体包含90％至100％的混合金属氧化物MxTyOz（其中M是选自Zn，Sn，In，Cu及其组合的金属; T是选自Ti，Zr，Hf，V，Nb ，Ta，Cr，Mo，W及其组合; O是选择氧，x，y和z，使得z对于M x T y O z为至多化学计量），并且0％至10％的掺杂剂包含选自 镧系稀土元素，Mn，Cr及其组合，或化学计量过量的Zn，Cu，Sn或In。 基于用Ta 2 O 5或Ta处理以形成Ta 2 Zn 3 O 8的ZnO的蓝色发光荧光体的特征在于CIE 1931色度值x和y，其中x在约0.14和0.20之间，y在约0.05和0.15之间。 在优选实施例中，一种工艺特别适用于在制造显示器期间在原位形成导电薄膜或表面层形式的荧光体。 优选的原位工艺具有集成的蚀刻停止件，其利用低能电子激发的荧光体在场发射显示结构中精确地限定开口的深度。 场致发射显示器包括每个具有场致发射阴极和包括至少一个阴极发光荧光体的阳极的单元。 可以通过选择性沉积合适的掺杂剂来制备各种颜色的磷光体的布置。 当施加合适的电压时，显示单元结构还可以具有用于控制流向阳极的电子电流的栅极元件及其荧光体。

公开(公告)号：WO1997009733A1

公开(公告)日：1997-03-13

申请号：PCT/US1996013398

申请日：1996-08-16

Applicant: ADVANCED VISION TECHNOLOGIES, INC. ,  POTTER, Michael, D.

Inventor： ADVANCED VISION TECHNOLOGIES, INC.

IPC: H01J09/02

CPC classification number: H01J3/022 ,  H01J9/025

Abstract: Microelectronic field emission device (10) has an ultra-thin emitter electrode (30) extending parallel to substrate (20) and an anode (40). A control electrode (70) having a lateral dimension a small fraction of the emitter-to-anode gap width and a height dimension a small fraction of the anode height is spaced from the emitter by insulator (60). The control electrode may substantially surround the anode. A small capacitance between the electrodes allows high switching speeds. Plural control electrodes may be formed. A fabrication process (S1-S18) uses two sacrificial materials (150 and 160), one of which forms a temporary mandrel, and uses a conformal conductive layer to form each control electrode with small, precise dimensions and alignment.

Abstract translation: 微电子场发射器件（10）具有平行于衬底（20）延伸的超薄发射电极（30）和阳极（40）。 具有发射极间距宽度的一小部分的横向尺寸和阳极高度的一小部分的高度尺寸的控制电极（70）通过绝缘体（60）与发射极间隔开。 控制电极可以基本上围绕阳极。 电极之间的小电容允许高切换速度。 可以形成多个控制电极。 制造工艺（S1-S18）使用两个牺牲材料（150和160），其中之一形成临时心轴，并且使用共形导电层以小的精确的尺寸和对准形成每个控制电极。

公开(公告)号：WO1998032145A2

公开(公告)日：1998-07-23

申请号：PCT/US1997023718

申请日：1997-12-30

Applicant: ADVANCED VISION TECHNOLOGIES, INC.

Inventor： ADVANCED VISION TECHNOLOGIES, INC. ,  POTTER, Michael, D.

IPC: H01J00/00

CPC classification number: H01J3/022 ,  H01J9/025

Abstract: A device useful as a display element has an electron emitter and an anode disposed to receive electrons emitted from the emitter. The anode has surface portions differing in resistivity, providing an electron sink portion at the surface portion of lowest resistivity. A preferred embodiment has a lateral field-emission electron emitter and has an anode formed by processes specially adapted to provide anode portions of differing resistivity, including the electron sink portion. The electron sink portion is preferably disposed at a position laterally spaced apart from the emitting tip of the device's electron emitter. In a particularly preferred fabrication process, the anode is formed by depositing a base layer, depositing and patterning an etch-stop layer with an opening to define the electron-sink portion, forming an opening by etching overlying layers down to the etch-stop layer, and heating the base layer and etch-stop layer to form an anode surface that includes both an integral electron-sink portion and a cathodoluminescent phosphor for emitting light. The fabrication process provides for fabricating a plurality of display element devices to make a flat panel display.

Abstract translation: 用作显示元件的器件具有设置成接收从发射极发射的电子的电子发射器和阳极。 阳极具有电阻率不同的表面部分，在最低电阻率的表面部分提供电子吸收部分。 优选实施例具有横向场发射电子发射器，并且具有通过特别适于提供包括电子吸收部分的不同电阻率的阳极部分的工艺形成的阳极。 电子吸收部优选设置在与器件的电子发射体的发射端横向间隔开的位置。 在特别优选的制造工艺中，阳极通过沉积基底层，沉积和图案化具有开口的蚀刻停止层以形成电子吸收部分而形成，通过将覆盖层向下蚀刻到蚀刻停止层 并且加热基底层和蚀刻停止层以形成包括用于发光的整体电子吸收部分和阴极发光荧光体的阳极表面。 制造工艺提供制造多个显示元件装置以制作平板显示器。

公开(公告)号：WO1997002586A1

公开(公告)日：1997-01-23

申请号：PCT/US1996011332

申请日：1996-07-03

Applicant: ADVANCED VISION TECHNOLOGIES, INC. ,  POTTER, Michael, D.

Inventor： ADVANCED VISION TECHNOLOGIES, INC.

IPC: H01J09/02

CPC classification number: H01J9/025 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2329/00

Abstract: A lateral-emitter electron field-emission display device structure (10) incorporates a thin-film emitter (100) having an emitting edge (110) in direct contact with a non-conducting or very high resistivity phosphor (75), thereby eliminating a gap between the emitter and the phosphor. Such a gap has been a part of all field-emission display devices in the prior art. The ultra-thin-film lateral emitter (100) of the structure is deposited in a plane parallel to the device's substrate (20) and has an inherently small radius of curvature at its emitting edge, which may extend into phosphor (75). A fabrication process specially adapted to make the structure includes a directional trench etch (S15), which both defines the emitting edge and provides an opening (160) to receive a non-conducting phosphor (75). This phosphor covers an anode (70) and is automatically aligned in contact with the emitter edge (110). When an electrical bias voltage is applied between the emitter and anode, electrons are injected directly into the phosphor material from the emitter edge, exciting cathodoluminescence in the phosphor to emit light which is visible in a wide range of viewing angles. With minor variations in the fabrication process, a lateral-emitter electron field emission display device may be made with an extremely small emitter-phosphor gap, having a width less than 100 times the thickness of the ultra-thin emitter (100) or preferably zero gap width. Triode or tetrode embodiments include control electrodes (140).

Abstract translation: 横向发射极电子场发射显示器件结构（10）包括具有与非导电或非常高电阻率的磷光体（75）直接接触的发射边缘（110）的薄膜发射器（100），从而消除 发射极和磷光体之间的间隙。 这样的间隙已经是现有技术中的所有场致发射显示装置的一部分。 该结构的超薄膜横向发射器（100）沉积在平行于器件的衬底（20）的平面中，并且在其发射边缘处具有固有的小的曲率半径，其可以延伸到磷光体（75）中。 特别适于使该结构包括定向沟槽蚀刻（S15）的制造工艺，其均限定了发射边缘并且提供用于接收非导电磷光体（75）的开口（160）。 该荧光体覆盖阳极（70）并且自动对准与发射极边缘（110）接触。 当在发射极和阳极之间施加电偏压时，电子从发射极边缘直接注入到荧光体材料中，激发荧光体中的阴极发光，发射在宽视角范围内可见的光。 在制造工艺中有微小变化的情况下，横向发射极电子场发射显示装置可以制造成具有极小的发射 - 磷光体间隙，其宽度小于超薄发射极（100）的厚度的100倍，或者优选为零 间隙宽度。 三极管或四极管实施例包括控制电极（140）。

公开(公告)号：WO1996036061A1

公开(公告)日：1996-11-14

申请号：PCT/US1996006336

申请日：1996-05-06

Applicant: ADVANCED VISION TECHNOLOGIES, INC. ,  POTTER, Michael, D.

Inventor： ADVANCED VISION TECHNOLOGIES, INC.

IPC: H01J01/16

CPC classification number: H01J21/105 ,  H01J3/022 ,  H01J9/025 ,  H01J31/127

Abstract: A lateral-emitter field-emission device includes a thin-film emitter cathode (50) of thickness less than several hundred angstrom and has an edge or tip (110) with small radius of curvature. In the display cell structure, a cathodoluminescent phosphor anode (60), allowing a large portion of the phosphor anode's top surface to emit light in a desired direction. An anode contact layer contacts the phosphor anode (60) from below to form a buried anode contact (90) which does not interfere with light emission. The anode phosphor is precisely spaced apart form the cathode edge or tip and receives electrons emitted by the field emission from the edge or tip of the lateral-emitter cathode, when a small bias voltage is applied. The device may be configured as diode, triode, or tetrode, etc. having one or more control electrodes (140) and/or (170) positioned to allow control of current from the emitter to the phosphor anode by an electrical signal applied to the control electrode.

Abstract translation: 横向射极场致发射器件包括厚度小于几百埃的薄膜发射极阴极（50），并且具有小的曲率半径的边缘（110）。 在显示单元结构中，阴极发光磷光体阳极（60）允许荧光体阳极的顶表面的大部分在期望的方向上发光。 阳极接触层从下方接触磷光体阳极（60）以形成不干扰光发射的掩埋阳极接触（90）。 当施加小的偏置电压时，阳极磷光体从阴极边缘或尖端精确地间隔开，并且接收由侧向发射极阴极的边缘或尖端的场发射发射的电子。 该器件可以被配置为具有一个或多个控制电极（140）和/或（170）的二极管，三极管或四极管等，以允许通过施加到发光体的电信号来控制从发射极到磷光体阳极的电流 控制电极。

公开(公告)号：WO1996042113A1

公开(公告)日：1996-12-27

申请号：PCT/US1996010066

申请日：1996-06-11

Applicant: ADVANCED VISION TECHNOLOGIES, INC. ,  POTTER, Michael, D.

Inventor： ADVANCED VISION TECHNOLOGIES, INC.

IPC: H01L31/0312

CPC classification number: H01J9/025

Abstract: A lateral-emitter electron field emission device (10) includes a thin-film laminar composite emitter structure (50) including two or more films (70, 80, 90) composed of materials having different etch rates. The simplest emitter consists of two ultra-thin layers (70 and 80 or 90) etched differentially so that a salient remaining portion of the more etch-resistant layer (70) protrudes beyond the less etch-resistant layer (80 or 90) to form a small-radius tip (100). Preferably, the most etch-resistant layer (70) is N-doped diamond which has a nearly zero work function. The emitter structure may be a three-layer structure with upper and/or lower layers (80, 90) acting as a physical supporting and integral electrical conducting medium. In a preferred process for fabricating the device, the laminar composite emitter (50) is first patterned by a directional trench etch. During or after fabrication of the trench (140), the laminar composite emitter (50) is differentially etched as described above by chemical or electro-chemical etch, differential electropolishing, or differential ablation, leaving a protruding ultra-thin emitter tip (100).

Abstract translation: 横向发射极电子场发射器件（10）包括薄膜层状复合发射器结构（50），其包括由具有不同蚀刻速率的材料组成的两个或更多个膜（70,80,90）。 最简单的发射器由差分蚀刻的两个超薄层（70和80或90）组成，使得更耐蚀刻层（70）的显着的剩余部分突出超过较少耐蚀刻层（80或90）以形成 一个小半径的尖端（100）。 优选地，最耐蚀刻层（70）是具有接近零功函数的N掺杂金刚石。 发射极结构可以是三层结构，其中上层和/或下层（80,90）用作物理支撑和整体导电介质。 在用于制造该器件的优选方法中，层状复合发射器（50）首先通过定向沟槽蚀刻图案化。 在制造沟槽（140）期间或之后，层状复合发射器（50）如上所述通过化学或电化学蚀刻，差分电解抛光或差分消融进行差异蚀刻，留下突出的超薄发射极尖端（100） 。

公开(公告)号：WO1996038855A1

公开(公告)日：1996-12-05

申请号：PCT/US1996008237

申请日：1996-05-31

Applicant: ADVANCED VISION TECHNOLOGIES, INC. ,  POTTER, Michael, D.

Inventor： ADVANCED VISION TECHNOLOGIES, INC.

IPC: H01J09/40

CPC classification number: H01J9/025 ,  H01J3/022 ,  H01J2201/30423 ,  H01J2209/385

Abstract: A process for fabricating, in a planar substrate, a hermetically sealed chamber for a field-emission cell or the like, allows operating the device in a vacuum or a low pressure inert gas. The process includes methods of covering an opening (160), enclosing the vacuum or gas, and methods of including an optional quantity of gettering material. An example of a device using such a hermetically sealed chamber is a lateral-emitter field-emission device (10) having a lateral emitter (100) parallel to a substrate (20) and having a simplified anode structure (70). In one simple embodiment, a control electrode (140) is positioned in a plane above the emitter edge (110) and automatically aligned to that edge. The simplified devices are specially adapted for field emission display arrays. An overall fabrication process uses steps (S1-S18) to produce the devices and arrays. Various embodiments of the fabrication process allow the use of conductive or insulating substrates (20), allow fabrication of devices having various functions and complexity, and allow covering a trench opening (160) etched through the emitter and insulator, thus enclosing the hermetically sealed chamber.

Abstract translation: 在平面基板中制造用于场致发射电池等的气密密封室的方法允许在真空或低压惰性气体中操作该装置。 该方法包括覆盖封闭真空或气体的开口（160）的方法以及包括任选数量的吸气材料的方法。 使用这种密封室的装置的实例是具有平行于基板（20）并且具有简化的阳极结构（70）的横向发射器（100）的横向发射极场发射装置（10）。 在一个简单的实施例中，控制电极（140）被定位在发射器边缘（110）上方的平面中并且自动对准该边缘。 简化的设备专门用于场发射显示阵列。 整个制造过程使用步骤（S1-S18）来产生器件和阵列。 制造工艺的各种实施例允许使用导电或绝缘衬底（20），允许制造具有各种功能和复杂性的器件，并且允许覆盖通过发射器和绝缘体蚀刻的沟槽开口（160），从而封闭密封的腔室 。

公开(公告)号：EP1116256A1

公开(公告)日：2001-07-18

申请号：EP00948950.1

申请日：2000-07-25

Applicant: Advanced Vision Technologies, Inc.

Inventor： POTTER, Michael, D.

IPC: H01J21/10 ,  H01J9/02

CPC classification number: B82Y30/00 ,  H01J9/025 ,  H01J21/105

Abstract: An ultra-high-frequency vacuum-channel field-effect microelectronic device (VFED or IGVFED) has a lateral field-emission source (60), a drain (150), and one or more insulated gates (40, 160). The insulated gate(s) are preferably disposed to extend in overlapping alignment with the emitting edge (85) of the lateral field-emission source and with a portion of the vacuum-channel region (120). If the gate(s) are omitted, the device performs as an ultra-high speed diode. A preferred fabrication process for the device uses a sacrificial material temporarily deposited in a trench for the vacuum-channel region which is covered with an insulating cover. An access hole in the cover allows removal of the sacrificial material. As part of a preferred fabrication process, the drain preferably acts also as a sealing plug, plugging the access hole and sealing the vacuum-channel region after the vacuum-channel region is evacuated.