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公开(公告)号：WO1998032145A2
公开(公告)日：1998-07-23
申请号：PCT/US1997023718
申请日：1997-12-30
Applicant: ADVANCED VISION TECHNOLOGIES, INC.
IPC: H01J00/00
Abstract: A device useful as a display element has an electron emitter and an anode disposed to receive electrons emitted from the emitter. The anode has surface portions differing in resistivity, providing an electron sink portion at the surface portion of lowest resistivity. A preferred embodiment has a lateral field-emission electron emitter and has an anode formed by processes specially adapted to provide anode portions of differing resistivity, including the electron sink portion. The electron sink portion is preferably disposed at a position laterally spaced apart from the emitting tip of the device's electron emitter. In a particularly preferred fabrication process, the anode is formed by depositing a base layer, depositing and patterning an etch-stop layer with an opening to define the electron-sink portion, forming an opening by etching overlying layers down to the etch-stop layer, and heating the base layer and etch-stop layer to form an anode surface that includes both an integral electron-sink portion and a cathodoluminescent phosphor for emitting light. The fabrication process provides for fabricating a plurality of display element devices to make a flat panel display.
Abstract translation: 用作显示元件的器件具有设置成接收从发射极发射的电子的电子发射器和阳极。 阳极具有电阻率不同的表面部分，在最低电阻率的表面部分提供电子吸收部分。 优选实施例具有横向场发射电子发射器，并且具有通过特别适于提供包括电子吸收部分的不同电阻率的阳极部分的工艺形成的阳极。 电子吸收部优选设置在与器件的电子发射体的发射端横向间隔开的位置。 在特别优选的制造工艺中，阳极通过沉积基底层，沉积和图案化具有开口的蚀刻停止层以形成电子吸收部分而形成，通过将覆盖层向下蚀刻到蚀刻停止层 并且加热基底层和蚀刻停止层以形成包括用于发光的整体电子吸收部分和阴极发光荧光体的阳极表面。 制造工艺提供制造多个显示元件装置以制作平板显示器。
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Patent Agency Ranking
公开(公告)号：EP1116256A1
公开(公告)日：2001-07-18
申请号：EP00948950.1
申请日：2000-07-25
Applicant: Advanced Vision Technologies, Inc.
Inventor： POTTER, Michael, D.
CPC classification number: B82Y30/00 , H01J9/025 , H01J21/105
Abstract: An ultra-high-frequency vacuum-channel field-effect microelectronic device (VFED or IGVFED) has a lateral field-emission source (60), a drain (150), and one or more insulated gates (40, 160). The insulated gate(s) are preferably disposed to extend in overlapping alignment with the emitting edge (85) of the lateral field-emission source and with a portion of the vacuum-channel region (120). If the gate(s) are omitted, the device performs as an ultra-high speed diode. A preferred fabrication process for the device uses a sacrificial material temporarily deposited in a trench for the vacuum-channel region which is covered with an insulating cover. An access hole in the cover allows removal of the sacrificial material. As part of a preferred fabrication process, the drain preferably acts also as a sealing plug, plugging the access hole and sealing the vacuum-channel region after the vacuum-channel region is evacuated.
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3.发明公开INSULATED-GATE ELECTRON FIELD EMISSION DEVICES AND THEIR FABRICATION PROCESSES 审中-公开与绝缘栅和方法电子场发射器具，用于产生
公开(公告)号：EP1116255A1
公开(公告)日：2001-07-18
申请号：EP00948927.9
申请日：2000-07-24
Applicant: Advanced Vision Technologies, Inc.
Inventor： POTTER, Michael, D.
CPC classification number: H01J21/105 , H01J9/025
Abstract: A lateral-emitter field emission device has a gate (30) that is separated by an insulating layer (40) from a vacuum- or gas-filled environment containing other elements of the device. For example, the gate may be disposed external to a microchamber (110). The insulating layer is disposed such that there is no vacuum- or gas-filled path to the gate for electrons that are emitted from a lateral emitter. The insulating layer disposed between the emitter and the gate preferably comprises a material having a dielectric constant greater than one. The insulating layer also preferably has a low secondary electron yield over the device's operative range of electron energies. For display applications, the insulating layer is preferably transparent. Emitted electrons are confined to the microchamber containing their emitter. Thus, the gate current component of the emitter current consists of displacement current only, and direct electron current from the emitter to the gate is prevented. An array of the devices comprises an array of microchamber, so that electron current from each emitter can reach only the anode in the same microchamber, even for diode devices lacking a gate electrode. A fabrication process is specially adapted for fabricating the device and arrays of such devices, including formation in situ of a vacuum microchamber.
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公开(公告)号：EP1055248A1
公开(公告)日：2000-11-29
申请号：EP99906784.6
申请日：1999-02-06
Applicant: Advanced Vision Technologies, Inc.
Inventor： POTTER, Michael, D.
CPC classification number: H01J9/025 , H01J3/022 , H01J2201/30423
Abstract: A lateral-emitter field emission device (10) has a gate (60) that is separated by an insulating layer (80) from a vaccum- or gas-filled microchamber environment (20) containing other elements of the device (10). For example, the gate (60) may be disposed external to the microchamber (20). The insulating layer (80) is disposed such that there is no vaccum- or gas-filled path to the gate for electrons that are emitted from a lateral emitter (40, 100). The insulating layer (70, 80) disposed between the emitter and the gate preferably comprises a material having a dielectric constant greater than one. The insulating layer also preferably has a low secondary electron yield over the device's operative range of electron energies. For display applications, the insulating layer is preferably transparent. Emitted electrons are confined to the microchamber (20) containing their emitter (100). Thus, the gate current component of the emitter current consists of displacement current only. This displacement current is a result of any change in potential of the gate relative to other elements such as, for example, relative to the emitter. Direct electron current from the emitter to the gate is prevented. An array of the devices comprises an array of microchambers, so that electron current from each emitter (100) can reach only the anode (50, 55) in the same microchamber, even for diode devices lacking a gate electrode (60). A fabrication process (S1-S28) is specially adapted for fabricating the device and arrays of such devices.
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公开(公告)号：EP1055245A1
公开(公告)日：2000-11-29
申请号：EP98963084.3
申请日：1998-12-11
Applicant: Advanced Vision Technologies, Inc.
Inventor： POTTER, Michael, D.
CPC classification number: H01J29/94 , H01J2201/30423 , H01J2329/00
Abstract: A self-gettering electron field emitter (30) has a first portion (40) formed of a low-work-function material for emitting electrons, and it has an integral second portion (50) that acts both as a low-resistance electrical conductor and as a gettering surface. The self-geterring emitter (30) is formed by disposing a thin film of the low-work-function material parallel to a substrate and by disposing a thin film of the low-resistance geterring material parallel to the substrate and in contact with the thin film of the low-work-function material. The self-geterring emitter (30) is particularly suitable for use in lateral field emission devices (10). The preferred emitter structure has a tapered edge (60), with a salient portion (45) of the low-work-function material extending a small distance beyond an edge (55) of the gettering and low resistance material. A fabrication process (S1-S6) is specially adapted for in situ formation of the self-gettering electron field emitters while fabricating microelectronic field emission devices.
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公开(公告)号：EP0948800A2
公开(公告)日：1999-10-13
申请号：EP97954214.0
申请日：1997-12-30
Applicant: Advanced Vision Technologies, Inc.
Inventor： POTTER, Michael, D.
Abstract: A device useful as a display element has an electron emitter (40) and an anode (30) disposed to receive electrons emitted from the emitter. The anode has surface portions differing in resistivity, providing an electron sink portion (80) at the surface portion of lowest resistivity. A preferred embodiment has a lateral field-emission electron emitter (10) and has an anode formed by processes specially adapted to provide anode portions of differing resistivity, including the electron sink portion (80). The electron sink portion is preferably disposed at a position laterally spaced apart from the emitting tip of the device's electron emitter. In a particularly preferred fabrication process, the anode is formed by depositing a base layer, depositing and patterning an etch-stop layer (75) with an opening to define the electron-sink portion, forming an opening by etching overlying layers down to the etch-stop layer, and heating the base layer and etch-stop layer to form an anode surface that includes both an integral electron-sink portion and a cathodeluminescent phosphor (35) for emitting light. The fabrication process provides for fabricating a plurality of display element devices to make a flat panel display.
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