公开(公告)号：IL312104A

公开(公告)日：2024-06-01

申请号：IL31210424

申请日：2024-04-11

Applicant: ASML NETHERLANDS BV ,  BAKKER TIES JAN WILLEM ,  DE VRIES GOSSE CHARLES ,  DONDERS SJOERD NICOLAAS LAMBERTUS ,  ENGEL MICHAEL ,  HILDENBRAND VOLKER DIRK ,  JANSSEN FRANCISCUS JOHANNES JOSEPH ,  KURGANOVA EVGENIA ,  LUTTIKHUIS BERNARDUS ANTONIUS JOHANNES ,  VAN DER HAM RONALD ,  VAN LIPZIG JEROEN PETERUS JOHANNES ,  VERMEULEN PAUL ALEXANDER ,  WOLF ABRAHAM JAN

Inventor： BAKKER TIES JAN WILLEM ,  DE VRIES GOSSE CHARLES ,  DONDERS SJOERD NICOLAAS LAMBERTUS ,  ENGEL MICHAEL ,  HILDENBRAND VOLKER DIRK ,  JANSSEN FRANCISCUS JOHANNES JOSEPH ,  KURGANOVA EVGENIA ,  LUTTIKHUIS BERNARDUS ANTONIUS JOHANNES ,  VAN DER HAM RONALD ,  VAN LIPZIG JEROEN PETERUS JOHANNES ,  VERMEULEN PAUL ALEXANDER ,  WOLF ABRAHAM JAN

Abstract: A lithographic apparatus comprises: an illumination system; a support structure; a substrate table; a projection system and a heating system. The illumination system is configured to condition a radiation beam. The support structure is constructed to support a reticle and pellicle assembly for receipt of the radiation beam conditioned by the illumination system. The substrate table is constructed to support a substrate. The projection system is configured to receive the radiation beam from the reticle - pellicle assembly and to project it onto the substrate. The heating system is operable to heat a pellicle of the reticle - pellicle assembly supported by the support structure. A method for using a reticle - pellicle assembly comprises: illuminating the reticle - pellicle assembly with a radiation beam so as to form a patterned image on a substrate; and heating the pellicle of the reticle - pellicle assembly using a separate heat source.

公开(公告)号：IL314698A

公开(公告)日：2024-10-01

申请号：IL31469824

申请日：2024-08-01

Applicant: ASML NETHERLANDS B V ,  REININK JOHAN ,  DONDERS SJOERD NICOLAAS LAMBERTUS ,  PORTER CHRISTINA LYNN ,  COENEN TEIS JOHAN ,  DEURLOO JOS HENDERS BASTIAAN

Inventor： REININK JOHAN ,  DONDERS SJOERD NICOLAAS LAMBERTUS ,  PORTER CHRISTINA LYNN ,  COENEN TEIS JOHAN ,  DEURLOO JOS HENDERS BASTIAAN

Abstract: An apparatus for measuring a parameter of a structure related to a semiconductor manufacturing process. The apparatus comprises a source assembly configured to provide measurement radiation having one or more first wavelengths for irradiating the structure on a substrate. The apparatus further comprises a filter arranged to receive scattered measurement radiation that has scattered from the structure, wherein the filter is configured to transmit the scattered measurement radiation at the one or more first wavelengths and filter out radiation at one or more second wavelengths. The filter comprises a film with a curvature in at least one direction. The apparatus further comprises a plurality of detectors, located downstream of the filter, configured to detect the filtered scattered radiation configured to measure the parameter of the structure.

公开(公告)号：WO2012024131A3

公开(公告)日：2012-02-23

申请号：PCT/US2011/047299

申请日：2011-08-10

Applicant: RASIRC, INC. ,  ASML NETHERLANDS B. V. ,  SPIEGELMAN, Jeffrey, J. ,  HOLMES, Russell, J. ,  ALVAREZ, Daniel ,  SCACCABAROZZI, Luigi ,  DONDERS, Sjoerd, Nicolaas Lambertus ,  CASTELIJNS, Henricus, Jozef

Inventor： SPIEGELMAN, Jeffrey, J. ,  HOLMES, Russell, J. ,  ALVAREZ, Daniel ,  SCACCABAROZZI, Luigi ,  DONDERS, Sjoerd, Nicolaas Lambertus ,  CASTELIJNS, Henricus, Jozef

IPC: B08B3/04

Abstract: A method (500) for cleaning an article such as a EUV (extreme ultraviolet) lithography reticle is provided. The method includes evacuating a cleaning chamber and loading the article to be cleaned into the cleaning chamber (510); preparing the environment of the chamber (520) by connecting the cleaning chamber to a vapor source while controlling pressure in the cleaning chamber to a predetermined pressure; controlling a temperature of the article relative to a temperature of the vapor source so as to form a liquid film (530) over the article and over particles present on the article; isolating the cleaning chamber from the vapor source; evaporating the liquid film (540) by exposing the cleaning chamber to one or more condensing surfaces whose temperature is lower than that of the article, the evaporating liquid transporting at least a portion of the particles away from the article, which is then unloaded from the chamber (560). The cleaning steps (520 to 540) can be repeated (550) as desired.

公开(公告)号：WO2012024131A2

公开(公告)日：2012-02-23

申请号：PCT/US2011047299

申请日：2011-08-10

Applicant: RASIRC INC ,  ASML NETHERLANDS BV ,  SPIEGELMAN JEFFREY J ,  HOLMES RUSSELL J ,  ALVAREZ DANIEL ,  SCACCABAROZZI LUIGI ,  DONDERS SJOERD NICOLAAS LAMBERTUS ,  CASTELIJNS HENRICUS JOZEF

Inventor： SPIEGELMAN JEFFREY J ,  HOLMES RUSSELL J ,  ALVAREZ DANIEL ,  SCACCABAROZZI LUIGI ,  DONDERS SJOERD NICOLAAS LAMBERTUS ,  CASTELIJNS HENRICUS JOZEF

IPC: B08B3/04

CPC classification number: B08B7/0014 ,  B08B3/00 ,  B08B3/04 ,  B08B3/10 ,  B08B2230/01 ,  G03F1/24 ,  G03F1/82 ,  G03F7/16 ,  G03F7/427 ,  G03F7/70925 ,  H01L21/02052 ,  H01L21/67028

Abstract: A method (500) for cleaning an article such as a EUV (extreme ultraviolet) lithography reticle is provided. The method includes evacuating a cleaning chamber and loading the article to be cleaned into the cleaning chamber (510); preparing the environment of the chamber (520) by connecting the cleaning chamber to a vapor source while controlling pressure in the cleaning chamber to a predetermined pressure; controlling a temperature of the article relative to a temperature of the vapor source so as to form a liquid film (530) over the article and over particles present on the article; isolating the cleaning chamber from the vapor source; evaporating the liquid film (540) by exposing the cleaning chamber to one or more condensing surfaces whose temperature is lower than that of the article, the evaporating liquid transporting at least a portion of the particles away from the article, which is then unloaded from the chamber (560). The cleaning steps (520) to (540) can be repeated (550) as desired. An electrostatic trap may be provided to capture particles released by the evaporation. The cleaning technique can be used in a lithographic apparatus and in manufacturing a device having critical surfaces, such as a wafer, a semiconductor film, or surface of an apparatus employed in the manufacture of a semiconductor device.

Abstract translation: 提供了用于清洁诸如EUV（极紫外）光刻掩模版的物品的方法（500）。 该方法包括抽空清洁室并将待清洁的物品装载到清洁室（510）中; 通过在将清洁室中的压力控制到预定压力的同时将清洁室连接到蒸气源来准备室（520）的环境; 控制所述物品相对于所述蒸气源的温度的温度，以便在所述物品上形成液体膜（530）并且在所述物品上存在上述颗粒; 将清洁室与蒸气源隔离; 通过将清洁室暴露于温度低于物品的一个或多个冷凝表面来蒸发液体膜（540），蒸发液体将至少一部分颗粒运送到物品上，然后将其从 室（560）。 清洗步骤（520）至（540）可根据需要重复（550）。 可以提供静电捕获器来捕获通过蒸发释放的颗粒。 清洁技术可以用于光刻设备中，并且可用于制造具有临界表面的器件，例如晶片，半导体膜或用于制造半导体器件的器件的表面。