公开(公告)号：US20060271975A1

公开(公告)日：2006-11-30

申请号：US11135755

申请日：2005-05-23

Applicant: Edmund Sun ,  Stephen Purcell ,  Wai-Ting Chen

Inventor： Edmund Sun ,  Stephen Purcell ,  Wai-Ting Chen

IPC: H04N7/173 ,  G06F3/00 ,  H04N5/445

CPC classification number: H04N5/76 ,  H04N5/775 ,  H04N5/781 ,  H04N5/907 ,  H04N9/8042 ,  H04N21/2747 ,  H04N21/4184 ,  H04N21/4334 ,  H04N21/43622 ,  H04N21/6581

Abstract: Methods and apparatus, including computer program products, for recording and replaying audio and video programs. A device includes a video input controller, a video output controller, a command interface, a network adapter, and control circuitry. The video input controller receives an audiovisual program. The video output controller is operable to output a video signal representing the audiovisual program. The command interface is operable to receive input requesting that the audiovisual program be recorded. The network adapter is operable to connect the device to a data communication network, where the device is addressable over the data communication network through the network adapter. The control circuitry can receive the input requesting that the audiovisual program be recorded. The control circuitry can cause the requested audiovisual program to be transmitted to a remote storage device over the data communication network through the network adapter and to be recorded at the remote storage device.

Abstract translation: 用于记录和重放音频和视频节目的方法和装置，包括计算机程序产品。 一种设备包括视频输入控制器，视频输出控制器，命令接口，网络适配器和控制电路。 视频输入控制器接收视听节目。 视频输出控制器可操作以输出表示视听节目的视频信号。 命令接口可操作以接收请求记录视听节目的输入。 网络适​​配器可操作以将设备连接到数据通信网络，其中设备可通过网络适配器在数据通信网络上寻址。 控制电路可以接收请求记录视听节目的输入。 控制电路可以使请求的视听节目通过网络适配器通过数据通信网络发送到远程存储设备，并被记录在远程存储设备中。

公开(公告)号：US4230791A

公开(公告)日：1980-10-28

申请号：US25871

申请日：1979-04-02

Applicant: Hing C. Chu ,  Y. S. Edmund Sun

Inventor： Hing C. Chu ,  Y. S. Edmund Sun

IPC: H01L21/263 ,  H01L7/00

CPC classification number: H01L21/263 ,  Y10S438/904

Abstract: An improved unijunction transistor having increased valley current is characterized by a region of locally lower lifetime proximate the emitter-base junction. The lifetime is reduced either by overall irradiation of the device or, more preferably, by selective irradiation of the junction area alone.

Abstract translation: 具有增加的谷值电流的改进的单结晶体管的特征在于邻近发射极 - 基极结的局部较低寿命的区域。 通过器件的整体照射或更优选通过单独的接合区域的选择性照射来降低寿命。

公开(公告)号：US3994430A

公开(公告)日：1976-11-30

申请号：US600300

申请日：1975-07-30

Applicant: Dominic A. Cusano ,  James A. Loughran ,  Yen Sheng Edmund Sun

Inventor： Dominic A. Cusano ,  James A. Loughran ,  Yen Sheng Edmund Sun

IPC: B23K1/19 ,  B23K35/00 ,  B23K35/24 ,  C04B37/02 ,  H01L23/04 ,  H05K1/03 ,  H05K3/20 ,  H05K3/38 ,  B23K31/02

CPC classification number: B23K35/24 ,  B23K1/19 ,  B23K35/001 ,  C04B37/026 ,  H01L24/34 ,  H05K3/38 ,  C04B2237/06 ,  C04B2237/343 ,  C04B2237/407 ,  C04B2237/54 ,  C04B2237/567 ,  C04B2237/708 ,  C04B2237/76 ,  H01L2224/40091 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01322 ,  H01L2924/12044 ,  H01L2924/14 ,  H05K1/0306 ,  H05K2201/0355 ,  H05K3/202 ,  Y10S228/903

Abstract: Disclosed is a method of bonding metals to substrates such as ceramics or metals. A bonding agent forms a eutectic alloy with the metal to provide bonding. Several methods of supplying the bonding agent to the system are disclosed. However, regardless of which method of introducing the bonding agent into the system is employed, the quantity of the bonding agent is carefully controlled so that the compound in the region of the bond is hypoeutectic. To form the bond, the metal and the substrate are placed adjacent each other and the bonding agent is introduced into the system. The system is then heated to a temperature between the eutectic temperature and the melting point of the metal for a preselected time. The system is then cooled to form a bond. The heating is carried out in an inert atmosphere or a vacuum.

Abstract translation: 公开了将金属与陶瓷或金属等基材接合的方法。 粘合剂与金属形成共晶合金以提供粘合。 公开了向系统提供粘合剂的几种方法。 然而，无论使用将粘合剂引入到体系中的哪种方法，都认真地控制粘合剂的量，使得键的区域中的化合物是亚共晶的。 为了形成接合，金属和基板彼此相邻地放置，并且粘合剂被引入到系统中。 然后将系统在预选的时间内加热到共晶温度和金属的熔点之间的温度。 然后将系统冷却以形成结合。 加热在惰性气氛或真空中进行。

公开(公告)号：US4043836A

公开(公告)日：1977-08-23

申请号：US682581

申请日：1976-05-03

Applicant: Yen Sheng Edmund Sun

Inventor： Yen Sheng Edmund Sun

IPC: H01L29/74 ,  H01L21/263 ,  H01L21/322 ,  H01L29/744 ,  H01L29/747 ,  H01L29/861

CPC classification number: H01L21/263 ,  Y10S148/046

Abstract: Disclosed is a method of manufacturing semiconductor devices including a step of irradiating the devices to alter the turnoff and forward drop characteristics thereof. The irradiation is carried out at a temperature above 100.degree. C, and preferably in the range of 150.degree. to 375.degree. C. No post irradiation annealing step is required.

Abstract translation: 公开了一种制造半导体器件的方法，其包括照射该器件以改变其截止和向下落差特性的步骤。 照射在高于100℃，优选在150℃至375℃的温度下进行。不需要后照射退火步骤。

公开(公告)号：US4292644A

公开(公告)日：1981-09-29

申请号：US25870

申请日：1979-04-02

Applicant: Hing C. Chu ,  Y. S. Edmund Sun

Inventor： Hing C. Chu ,  Y. S. Edmund Sun

IPC: H01L21/263 ,  H01L29/70 ,  H01L29/74

CPC classification number: H01L29/705 ,  H01L21/263

Abstract: An improved unijunction transistor having increased valley current is characterized by a region of locally lower lifetime proximate the emitter-base junction. The lifetime is reduced either by overall irradiation of the device or, more preferably, by selective irradiation of the junction area alone.

Abstract translation: 具有增加的谷值电流的改进的单结晶体管的特征在于邻近发射极 - 基极结的局部较低寿命的区域。 通过器件的整体照射或更优选通过单独的接合区域的选择性照射来降低寿命。

公开(公告)号：US4134778A

公开(公告)日：1979-01-16

申请号：US830190

申请日：1977-09-02

Applicant: William W. Sheng ,  Y. S. Edmund Sun ,  Edward G. Tefft

Inventor： William W. Sheng ,  Y. S. Edmund Sun ,  Edward G. Tefft

IPC: H01L21/322 ,  H01L21/263 ,  H01L29/74 ,  H01L29/747 ,  H01L7/54 ,  H01L21/22

CPC classification number: H01L29/747 ,  H01L21/263 ,  Y10S148/024

Abstract: The dv/dt characteristics of a bidirectional thyristor are improved by irradiating selected portions of the device with high energy crystal lattice-damaging particles. In an exemplary embodiment, the commutating dv/dt of a triac is enhanced by the masked, selective irradiation of the boundaries between conducting portions and between the gate and the conducting portions.

Abstract translation: 双极晶闸管的dv / dt特性通过用高能晶格损伤颗粒照射器件的选定部分来改善。 在示例性实施例中，通过对导电部分之间以及栅极和导电部分之间的边界进行掩蔽选择性照射来增强三端双向可控硅开关元件的整流dv / dt。

公开(公告)号：US08934093B2

公开(公告)日：2015-01-13

申请号：US13401199

申请日：2012-02-21

Applicant: Pi Ling Huang ,  Kuang-Yu Hsu ,  Cheng-Kai Wang ,  Edmund Sun ,  Sheng-Lung Huang

Inventor： Pi Ling Huang ,  Kuang-Yu Hsu ,  Cheng-Kai Wang ,  Edmund Sun ,  Sheng-Lung Huang

IPC: G01J3/44 ,  G01J3/02 ,  G01J3/10 ,  H01S3/067 ,  H01S3/0941 ,  H01S3/16 ,  H01S5/323

CPC classification number: G01J3/0218 ,  G01J3/0245 ,  G01J3/10 ,  G01J3/44 ,  H01S3/06716 ,  H01S3/09415 ,  H01S3/1623 ,  H01S3/1625 ,  H01S3/1636 ,  H01S5/32341

Abstract: The invention relates to a crystal fiber, a Raman spectrometer using the same and a inspection method thereof. The crystal fiber comprises a sapphire crystal is doped with two transition metals having different concentrations. An excitation light beam at a specific wavelength can propagate along the crystal fiber to generate a narrow-band light beam and a wide-band light beam to project on a specimen. Raman scattered light is emitted from the specimen. The wavelength of the Raman scattered light falls within the wavelength range of the wide-band light beam so that the wide-band light beam is enhanced at some characteristic wavelengths to facilitate Raman spectroscopy.

Abstract translation: 本发明涉及一种晶体纤维，使用其的拉曼光谱仪及其检查方法。 晶体纤维包含蓝宝石晶体，其掺杂有两种不同浓度的过渡金属。 特定波长的激发光束可以沿着晶体光纤传播，以产生窄带光束和宽带光束投影在样本上。 拉曼散射光从样品中排出。 拉曼散射光的波长落在宽带光束的波长范围内，使得宽带光束在某些特征波长处被增强以促进拉曼光谱。

公开(公告)号：US20120212736A1

公开(公告)日：2012-08-23

申请号：US13401199

申请日：2012-02-21

Applicant: PI LING HUANG ,  KUANG-YU HSU ,  CHENG-KAI WANG ,  EDMUND SUN ,  SHENG-LUNG HUANG

Inventor： PI LING HUANG ,  KUANG-YU HSU ,  CHENG-KAI WANG ,  EDMUND SUN ,  SHENG-LUNG HUANG

IPC: G01J3/44 ,  G02B6/00

CPC classification number: G01J3/0218 ,  G01J3/0245 ,  G01J3/10 ,  G01J3/44 ,  H01S3/06716 ,  H01S3/09415 ,  H01S3/1623 ,  H01S3/1625 ,  H01S3/1636 ,  H01S5/32341

Abstract: The invention relates to a crystal fiber, a Raman spectrometer using the same and a inspection method thereof. The crystal fiber comprises a sapphire crystal is doped with two transition metals having different concentrations. An excitation light beam at a specific wavelength can propagate along the crystal fiber to generate a narrow-band light beam and a wide-band light beam to project on a specimen. Raman scattered light is emitted from the specimen. The wavelength of the Raman scattered light falls within the wavelength range of the wide-band light beam so that the wide-band light beam is enhanced at some characteristic wavelengths to facilitate Raman spectroscopy.

Abstract translation: 本发明涉及一种晶体纤维，使用其的拉曼光谱仪及其检查方法。 晶体纤维包括蓝宝石晶体，其掺杂有两种不同浓度的过渡金属。 特定波长的激发光束可以沿着晶体光纤传播，以产生窄带光束和宽带光束投影在样本上。 拉曼散射光从样品中排出。 拉曼散射光的波长落在宽带光束的波长范围内，使得宽带光束在某些特征波长处被增强以促进拉曼光谱。