Abstract:
A system includes a sensor including a sensor pad and a well wall structure defining a well operatively coupled to the sensor pad. The well is further defined by a lower surface disposed over the sensor pad. The well wall structure defines an upper surface and defines a wall surface extending between the upper surface and the lower surface. The system further includes a conductive layer disposed over the lower surface and the wall surface.
Abstract:
A system includes a sensor including a sensor pad and a well wall structure defining a well operatively coupled to the sensor pad. The well is further defined by a lower surface disposed over the sensor pad. The well wall structure defines an upper surface and defines a wall surface extending between the upper surface and the lower surface. The system further includes a conductive layer disposed over the lower surface and the wall surface.
Abstract:
A chemical detection device and a method of its manufacture is described herein. The device includes a chemically-sensitive field effect transistor 214 including a floating gate conductor 218 having an upper surface 220. A dielectric material 210 defines a cavity 201 extending to the upper surface of the floating gate conductor. A conductive layer 250 is on a sidewall 260 of the cavity and electrically communicating with the floating gate conductor 220. An inner surface 251 of the conductive layer 250 defines a well 201 for the sensor.
Abstract:
Sequencing of nucleic acid strands, particularly DNA,has became increasingly important. The sequence of a nucleic acid sample can be determined by measuring ionic responses to nucleic acid sample can be determined by measuring fluorescent emissions resulting from nucleotide addition. The sequencing device includes a substrate having a refractive index of at least 1.45 and a surface layer disposed over a major surface of the substrate and defining a plurality of reaction volumes. The surface layer has a refractive index in a range of 1.32 to 1.38. The substrate may also comprise a pluralityof detectors.
Abstract:
In one implementation, a chemical detection device is described herein. The device includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A dielectric material defines a cavity extending to the upper surface of the floating gate conductor. A conductive layer is on a sidewall of the cavity and electrically communicating with the floating gate conductor. An inner surface of the conductive layer defines a well for the sensor.
Abstract:
The described embodiments may provide a method of fabricating a chemical detection device. The method may comprise forming a microwell above a CMOS device. The microwell may comprise a bottom surface and sidewalls, The method may further comprise applying a first chemical to be selectively attached to the bottom surface of the microwell, forming a metal oxide layer on the sidewalls of the microwell, and applying a second chemical to be selectively attached to the sidewalls of the microwell. The second chemical may lack an affinity to the first chemical.
Abstract:
A device includes a substrate having a refractive index of at least 1.45 and a surface layer disposed over a major surface of the substrate and defining a plurality of reaction volumes. The surface layer has a refractive index in a range of 1.32 to 1.38.