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    SILICA GLASS WITH SATURATED INDUCED ABSORPTION AND METHOD OF MAKING
    1.
    发明申请
    SILICA GLASS WITH SATURATED INDUCED ABSORPTION AND METHOD OF MAKING 审中-公开
    具有饱和诱导吸收作用的硅玻璃及其制备方法

    公开(公告)号：WO2011011662A2

    公开(公告)日：2011-01-27

    申请号：PCT/US2010/043015

    申请日：2010-07-23

    Applicant: CORNING INCORPORATED ,  SMITH, Charlene M ,  SCHIEFELBEIN, Susan L

    Inventor： SMITH, Charlene M ,  SCHIEFELBEIN, Susan L

    IPC: C03C3/04 ,  C03C23/00

    CPC classification number: C03C3/06 ,  C03B32/00 ,  C03B2201/21 ,  C03C4/0071 ,  C03C4/0085 ,  C03C23/0025 ,  C03C2201/21 ,  C03C2201/23 ,  C03C2203/54

    Abstract: A silica glass article, such as a lens in a stepper/scanner system, having saturated induced absorption at wavelengths of less than about 250 nm. Saturated induced absorption is achieved by first removing Si-O defects in the silica glass by forming silicon hydride (SiH) at such defects, and loading the silica glass with hydrogen to react with E' centers formed by photolysis of SiH in the silica glass article. The silicon hydride is formed by loading the silica glass with molecular hydrogen at temperatures of at least 475°C. After formation of SiH, the silica glass is loaded with additional molecular hydrogen at temperatures of less than 475°C.

    Abstract translation: 一种二氧化硅玻璃制品，例如步进/扫描仪系统中的透镜，其在波长小于约250nm处具有饱和诱导吸收。 饱和诱导吸收通过首先通过在这种缺陷处形成氢化硅（SiH）来去除石英玻璃中的Si-O缺陷，并且用氢气填充石英玻璃以与在二氧化硅玻璃制品中通过光解SiH而形成的E'中心反应 。 氢化硅是通过在至少475℃的温度下用分子氢填充石英玻璃而形成的。 在形成SiH之后，二氧化硅玻璃在小于475℃的温度下负载额外的分子氢。

    GROUP IIA METAL FLUORIDE SINGLE CRYSTALS SUITABLE FOR BELOW 200 NM OPTICAL LITHOGRAPHY AND A METHOD FOR SELECTING SUCH CRYSTALS
    3.
    发明申请
    GROUP IIA METAL FLUORIDE SINGLE CRYSTALS SUITABLE FOR BELOW 200 NM OPTICAL LITHOGRAPHY AND A METHOD FOR SELECTING SUCH CRYSTALS 审中-公开
    第IIA族金属氟化物单晶可适用于下列200纳米光学平版印刷和选择此类晶体的方法

    公开(公告)号：WO2005017626A2

    公开(公告)日：2005-02-24

    申请号：PCT/US2004/024400

    申请日：2004-07-28

    Applicant: CORNING INCORPORATED ,  AN, Chong, Pyung ,  SMITH, Charlene, M.

    Inventor： AN, Chong, Pyung ,  SMITH, Charlene, M.

    IPC: G03F7/20

    CPC classification number: G03F7/70958 ,  G01N21/33

    Abstract: The invention is directed to a method for determining metal fluoride crystals that are suitable for use in below 200 nm optical lithography by correlation of thermally stimulated current (TSC) measurements to fluence dependent transmission (FDT) measurements; and to metal fluoride crystals suitable for below 200 nm optical lithography, such crystals having a fluent dependent transmission slope that is linearly dependent on the thermally stimulated peak maximum. Crystals suitable for below 200 nm lithography can be determined by using the standard linear relationship between the TSC peak strengths and the FDT slopes without further more FDT measurements.

    Abstract translation: 本发明涉及一种通过将受热刺激电流（TSC）测量与流量相关传输（FDT）测量相关联来确定适用于低于200nm光刻的金属氟化物晶体的方法; 以及适合于低于200nm光刻的金属氟化物晶体，这种晶体具有与热刺激的峰值最大值线性相关的流动依赖的透射斜率。 可以通过使用TSC峰强度和FDT斜率之间的标准线性关系来确定适合于低于200nm光刻的晶体，而不需要进一步的FDT测量。

    SILICA GLASS WITH SATURATED INDUCED ABSORPTION AND METHOD OF MAKING
    4.
    发明申请
    SILICA GLASS WITH SATURATED INDUCED ABSORPTION AND METHOD OF MAKING 审中-公开
    具有饱和诱导吸收的二氧化硅玻璃及其制备方法

    公开(公告)号：WO2011011662A3

    公开(公告)日：2011-04-21

    申请号：PCT/US2010043015

    申请日：2010-07-23

    Applicant: CORNING INC ,  SMITH CHARLENE M ,  SCHIEFELBEIN SUSAN L

    Inventor： SMITH CHARLENE M ,  SCHIEFELBEIN SUSAN L

    IPC: C03B19/14 ,  C03C3/06 ,  C03C4/00 ,  C03C23/00

    CPC classification number: C03C3/06 ,  C03B32/00 ,  C03B2201/21 ,  C03C4/0071 ,  C03C4/0085 ,  C03C23/0025 ,  C03C2201/21 ,  C03C2201/23 ,  C03C2203/54

    Abstract: A silica glass article, such as a lens in a stepper/scanner system, having saturated induced absorption at wavelengths of less than about 250 nm. Saturated induced absorption is achieved by first removing Si-O defects in the silica glass by forming silicon hydride (SiH) at such defects, and loading the silica glass with hydrogen to react with E' centers formed by photolysis of SiH in the silica glass article. The silicon hydride is formed by loading the silica glass with molecular hydrogen at temperatures of at least 475°C. After formation of SiH, the silica glass is loaded with additional molecular hydrogen at temperatures of less than 475°C.

    Abstract translation: 石英玻璃制品，例如步进/扫描仪系统中的透镜，在小于约250nm的波长处具有饱和诱导吸收。 饱和诱导吸收是通过首先通过在硅石玻璃中形成硅氢化物（SiH）来除去二氧化硅玻璃中的Si-O缺陷，并将石英玻璃与氢气一起加载以与二氧化硅玻璃制品中的SiH光解产生的E'中心反应 。 通过在至少475℃的温度下将石英玻璃与分子氢加载而形成氢化硅。 在形成SiH之后，石英玻璃在小于475℃的温度下装载额外的分子氢。

    GROUP IIA METAL FLUORIDE SINGLE CRYSTALS FOR LITHOGRAPHY BELOW 200 NM AND METHOD FOR SELECTING SUCH CRYSTALS
    6.
    发明申请
    GROUP IIA METAL FLUORIDE SINGLE CRYSTALS FOR LITHOGRAPHY BELOW 200 NM AND METHOD FOR SELECTING SUCH CRYSTALS 审中-公开
    第IIA族金属氟化物单晶用于200nm以下的岩石和选择这种晶体的方法

    公开(公告)号：WO2005017626A3

    公开(公告)日：2005-04-14

    申请号：PCT/US2004024400

    申请日：2004-07-28

    Applicant: CORNING INC ,  AN CHONG PYUNG ,  SMITH CHARLENE M

    Inventor： AN CHONG PYUNG ,  SMITH CHARLENE M

    IPC: G01N21/33 ,  G03F7/20 ,  G01N17/00 ,  G01N21/23

    CPC classification number: G03F7/70958 ,  G01N21/33

    Abstract: The invention is directed to a method for determining metal fluoride crystals that are suitable for use in below 200 nm optical lithography by correlation of thermally stimulated current (TSC) measurements to fluence dependent transmission (FDT) measurements; and to metal fluoride crystals suitable for below 200 nm optical lithography, such crystals having a fluent dependent transmission slope that is linearly dependent on the thermally stimulated peak maximum. Crystals suitable for below 200 nm lithography can be determined by using the standard linear relationship between the TSC peak strengths and the FDT slopes without further more FDT measurements.

    Abstract translation: 本发明涉及一种通过将受热刺激电流（TSC）测量与流量相关传输（FDT）测量相关联来确定适用于低于200nm光刻的金属氟化物晶体的方法; 以及适合于低于200nm光刻的金属氟化物晶体，这种晶体具有与热刺激的峰值最大值线性相关的流动依赖的透射斜率。 可以通过使用TSC峰强度和FDT斜率之间的标准线性关系来确定适合于低于200nm光刻的晶体，而不需要进一步的FDT测量。

    MASK, MASK BLANK, PHOTOSENSITIVE MATERIAL THEREFOR AND FABRICATION THEREOF
    7.
    发明申请
    MASK, MASK BLANK, PHOTOSENSITIVE MATERIAL THEREFOR AND FABRICATION THEREOF 审中-公开
    遮罩，遮罩，其感光材料及其制造

    公开(公告)号：WO2004107044A2

    公开(公告)日：2004-12-09

    申请号：PCT/US2004/015243

    申请日：2004-05-13

    Applicant: CORNING INCORPORATED ,  BELLMAN, Robert, A. ,  BORRELLI, Nicholas, F. ,  HARES, George, B. ,  SMITH, Charlene, M. ,  WALTON, Robin, M.

    Inventor： BELLMAN, Robert, A. ,  BORRELLI, Nicholas, F. ,  HARES, George, B. ,  SMITH, Charlene, M. ,  WALTON, Robin, M.

    IPC: G03F

    CPC classification number: G03F1/30 ,  C03C3/064 ,  C03C3/091 ,  C03C15/00 ,  G03F1/32 ,  G03F1/34

    Abstract: Disclosed are masks and mask blanks for photolithographic processes, photosensitive materials and fabrication method therefor. Photosensitive materials are used in the masks for recording permanent pattern features via UV exposure. The masks are advantageously phase-shifting, but can be gray-scale masks having index patterns with arbitrary distribution of refractive index and pattern dimension. The masks may have features above the surface formed from opaque or attenuating materials. Alumino-boro-germano-silicate glasses having a composition comprising, in terms of mole percentage, 1-6% of Al 2 O 3 , 10-36% of B 2 O 3 , 2-20% of GeO 2 , 40-80% of SiO 2 , 2-10% of R 2 O, where R is selected from Li, Na and K, and expressed in terms of weight percentage of the glass, 0-5% of F, can be used for the mask substrate.

    Abstract translation: 公开了用于光刻工艺的掩模和掩模坯料，感光材料及其制造方法。 光敏材料用于通过紫外线曝光记录永久图案特征的掩模。 掩模有利地是相移，但是可以是具有折射率和图案尺寸的任意分布的索引图案的灰度掩模。 掩模可以具有由不透明或衰减材料形成的表面上方的特征。 氧化铝 - 硼 - 锗酸 - 硅酸盐玻璃，其组成包括以摩尔百分比计为1〜6％的Al 2 O 3，10-36％的B 2 O 3，2〜20％的GeO 2，40〜80％的SiO 2，2-10 R 2选自Li，Na和K的R 2 O％，并且以玻璃重量百分比表示，0-5％的F可以用于掩模基板。

    MASK, MASK BLANK, PHOTOSENSITIVE MATERIAL THEREFOR AND FABRICATION THEREOF
    8.
    发明申请
    MASK, MASK BLANK, PHOTOSENSITIVE MATERIAL THEREFOR AND FABRICATION THEREOF 审中-公开
    遮罩，遮罩，其感光材料及其制造

    公开(公告)号：WO2004107044A3

    公开(公告)日：2005-04-14

    申请号：PCT/US2004015243

    申请日：2004-05-13

    Applicant: BELLMAN ROBERT A ,  BORRELLI NICHOLAS F ,  HARES GEORGE B ,  SMITH CHARLENE M ,  WALTON ROBIN M ,  CORNING INC

    Inventor： BELLMAN ROBERT A ,  BORRELLI NICHOLAS F ,  HARES GEORGE B ,  SMITH CHARLENE M ,  WALTON ROBIN M

    IPC: C03C3/064 ,  C03C3/091 ,  C03C15/00 ,  G03F1/30 ,  G03F1/32 ,  G03F1/34 ,  G03F1/14 ,  G02B6/16 ,  G03F1/00

    CPC classification number: G03F1/30 ,  C03C3/064 ,  C03C3/091 ,  C03C15/00 ,  G03F1/32 ,  G03F1/34

    Abstract: Disclosed are masks and mask blanks for photolithographic processes, photosensitive materials and fabrication method therefor. Photosensitive materials are used in the masks for recording permanent pattern features via UV exposure. The masks are advantageously phase-shifting, but can be gray-scale masks having index patterns with arbitrary distribution of refractive index and pattern dimension. The masks may have features above the surface formed from opaque or attenuating materials. Alumino-boro-germano-silicate glasses having a composition comprising, in terms of mole percentage, 1-6% of Al2O3, 10-36% of B2O3, 2-20% of GeO2, 40-80% of SiO2, 2-10% of R2O, where R is selected from Li, Na and K, and expressed in terms of weight percentage of the glass, 0-5% of F, can be used for the mask substrate.

    Abstract translation: 公开了用于光刻工艺的掩模和掩模坯料，感光材料及其制造方法。 光敏材料用于通过紫外线曝光记录永久图案特征的掩模。 掩模有利地是相移，但是可以是具有折射率和图案尺寸的任意分布的索引图案的灰度掩模。 掩模可以具有由不透明或衰减材料形成的表面上方的特征。 氧化铝 - 硼 - 锗酸 - 硅酸盐玻璃，其组成包括以摩尔百分比计为1〜6％的Al 2 O 3，10-36％的B 2 O 3，2〜20％的GeO 2，40〜80％的SiO 2，2-10 R 2选自Li，Na和K的R 2 O％，并且以玻璃重量百分比表示，0-5％的F可以用于掩模基板。

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