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    Detection device for detecting two different colors with improved operating conditions
    1.
    发明专利
    Detection device for detecting two different colors with improved operating conditions 审中-公开
    用于检测具有改进的操作条件的两种不同颜色的检测装置

    公开(公告)号：JP2013106049A

    公开(公告)日：2013-05-30

    申请号：JP2012249979

    申请日：2012-11-14

    Applicant: Societe Francaise De Detecteurs Infrarouges Sofradir ,  ソシエテ、フランソワーズ、ド、デテクトゥル、アンフラルージュ、ソフラディルSociete Francaise De Detecteurs Infrarouges Sofradir

    Inventor： FABIEN XABYUER ,  ROLLAND RUBALD

    IPC: H01L31/107 ,  H01L31/10

    CPC classification number: H01L27/14643 ,  H01L27/14647 ,  H01L27/14652 ,  H01L31/02005 ,  H01L31/0352 ,  H01L31/1013 ,  H01L31/103

    Abstract: PROBLEM TO BE SOLVED: To provide a detection device that is less sensitive to mixing of information containing two colors associated with two photodetectors.SOLUTION: A substrate 3 successively includes a first semiconductor layer 5 having first bandgap energy, a semiconductor buffer layer 6, and a second semiconductor layer 7 having second bandgap energy different from the first bandgap energy. Two photodetectors 1, 2 sensitive to two different colors are formed respectively on the first and second semiconductor layers 5, 7. A first biasing pad 9 electrically connects the first semiconductor layer 5 to a first biasing circuits 8b, 14. A second biasing pad 10 electrically connects the second semiconductor layer 7 to a second biasing circuits 8a, 15. The first biasing pad is devoid of electrical connection with the second semiconductor layer 7.

    Abstract translation: 要解决的问题：提供对于与两个光电检测器相关联的包含两种颜色的信息的混合较不敏感的检测装置。 解决方案：衬底3依次包括具有第一带隙能的第一半导体层5，半导体缓冲层6和具有与第一带隙能不同的第二带隙能的第二半导体层7。 分别在第一和第二半导体层5,7上形成对两种不同颜色敏感的两个光电探测器1,2。第一偏置焊盘9将第一半导体层5电连接到第一偏置电路8b，14。 将第二半导体层7电连接到第二偏置电路8a，15.第一偏置焊盘与第二半导体层7没有电连接。版权所有：（C）2013，JPO＆INPIT

    Detection matrix with improved biasing conditions and fabrication method
    3.
    发明专利
    Detection matrix with improved biasing conditions and fabrication method 有权
    具有改进偏心条件和制造方法的检测矩阵

    公开(公告)号：JP2012186476A

    公开(公告)日：2012-09-27

    申请号：JP2012048245

    申请日：2012-03-05

    Applicant: Societe Francaise De Detecteurs Infrarouges Sofradir ,  ソシエテ、フランソワーズ、ド、デテクトゥル、アンフラルージュ、ソフラディルSociete Francaise De Detecteurs Infrarouges Sofradir

    Inventor： PATRICK MAILLART ,  FABIEN XABYUER

    IPC: H01L27/146 ,  H01L31/107 ,  H04N5/374

    CPC classification number: H01L27/14649 ,  H01L27/14603 ,  H01L31/022408

    Abstract: PROBLEM TO BE SOLVED: To provide an electromagnetic radiation detection device comprising a detection matrix with improved biasing conditions of photodetectors disposed on a substrate, and a method of fabricating the same.SOLUTION: The detection device includes a semiconductor substrate (1) of a first conductivity type. A matrix of photodiodes organized along a first organization axis is formed on the substrate (1). Each of the photodiodes is at least partially formed in the substrate (1). A peripheral biasing ring is formed around the photodiode matrix (1). The biasing ring is connected to a bias voltage generator (3). An electrically conducting contact is connected to the substrate and arranged between two photodiodes on the first organization axis. The distance separating the contact from each of the two photodiodes is equal to the distance separating two adjacent photodiodes along the first organization axis. The contact is connected to the bias voltage generator.

    Abstract translation: 解决的问题：提供一种电磁辐射检测装置及其制造方法，该电磁辐射检测装置包括具有改善的设置在基板上的光电检测器的偏置条件的检测矩阵。 检测装置包括第一导电类型的半导体衬底（1）。 沿着第一组织轴组织的光电二极管矩阵形成在衬底（1）上。 每个光电二极管至少部分地形成在衬底（1）中。 围绕光电二极管矩阵（1）形成外围偏置环。 偏置环连接到偏置电压发生器（3）。 导电触点连接到基板并且布置在第一组织轴上的两个光电二极管之间。 将接触与两个光电二极管中的每一个分开的距离等于沿着第一组织轴线分离两个相邻光电二极管的距离。 触点连接到偏置电压发生器。 版权所有（C）2012，JPO＆INPIT

    Radiation detection device with improved illumination range
    4.
    发明专利
    Radiation detection device with improved illumination range 有权
    具有改进的照明范围的辐射检测装置

    公开(公告)号：JP2013138192A

    公开(公告)日：2013-07-11

    申请号：JP2012259828

    申请日：2012-11-28

    Applicant: Societe Francaise De Detecteurs Infrarouges Sofradir ,  ソシエテ、フランソワーズ、ド、デテクトゥル、アンフラルージュ、ソフラディルSociete Francaise De Detecteurs Infrarouges Sofradir

    Inventor： ALEXANDRE MALTERE ,  ROLLAND RUBALD

    IPC: H01L31/10

    CPC classification number: G01J1/18 ,  G01J1/44 ,  G01J1/46

    Abstract: PROBLEM TO BE SOLVED: To provide a detection device for detecting electromagnetic radiation that does not saturate an electric circuit of the detection device when the received electromagnetic radiation is larger than expected.SOLUTION: A detection device comprises at least one pixel. The pixel comprises a photodetector 1 and a control circuit 3, and is provided with an output terminal 8 designed to connect an analysis circuit 4. The photodetector 1 is configured to have two different operating modes associated with different biasing conditions. A switch 9 connecting the photodetector 1 to the output terminal 8 of the pixel and a circuit for a connecting/disconnecting the control circuit 3 with the output terminal 8 of the pixel and with the photodetector 1 allow switching between the two operating modes. A comparator 10 compares a voltage across a capacitive load 5 with a threshold value and outputs first and second signals according to the comparison. The comparator 10 is connected to the circuit for connecting/disconnecting the control circuit 3 and to the switch 9.

    Abstract translation: 要解决的问题：提供一种用于检测当所接收的电磁辐射大于预期时不会使检测装置的电路饱和的电磁辐射的检测装置。解决方案：检测装置包括至少一个像素。 像素包括光电检测器1和控制电路3，并且设置有用于连接分析电路4的输出端子8.光电检测器1被配置为具有与不同偏置条件相关联的两种不同的操作模式。 将光电检测器1连接到像素的输出端子8的开关9和用于将控制电路3与像素的输出端子8和光电检测器1连接/断开的电路允许在两种操作模式之间切换。 比较器10将电容性负载5两端的电压与阈值进行比较，并根据比较输出第一和第二信号。 比较器10连接到用于连接/断开控制电路3和开关9的电路。

    Low-flux and low-noise detection circuit
    5.
    发明专利
    Low-flux and low-noise detection circuit 有权
    低通滤波和低噪声检测电路

    公开(公告)号：JP2013008952A

    公开(公告)日：2013-01-10

    申请号：JP2012114265

    申请日：2012-05-18

    Applicant: Societe Francaise De Detecteurs Infrarouges Sofradir ,  ソシエテ、フランソワーズ、ド、デテクトゥル、アンフラルージュ、ソフラディルSociete Francaise De Detecteurs Infrarouges Sofradir

    Inventor： ERIC SANSON

    IPC: H01L27/146 ,  H01L21/822 ,  H01L27/04 ,  H01L31/02 ,  H01L31/10

    CPC classification number: H01L27/14603 ,  H01L27/14623 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14818 ,  H01L2224/16

    Abstract: PROBLEM TO BE SOLVED: To provide a detection circuit which makes it possible to reduce the noise level during a low-flux use.SOLUTION: A detection circuit of the source follower per detector type comprises a photodiode 1 connected to an integration node N. A biasing circuit 3 makes it possible to bias the photodiode 1 between a first reverse-bias state and a second floating state. A readout circuit 4 is connected to the integration node N for generating a signal representative of the scene observed by the photodiode 1. A metal shielding 5 is arranged around the integration node N. The metal shielding 5 is connected to an output of the readout circuit 4 and configured to have a potential varying in the same direction as the potential of the integration node N.

    Abstract translation: 要解决的问题：提供一种能够在低通量使用期间降低噪声水平的检测电路。 解决方案：每个检测器类型的源极跟随器的检测电路包括连接到积分节点N的光电二极管1.偏置电路3使得可以在第一反向偏置状态和第二浮置状态之间偏置光电二极管1 。 读出电路4连接到积分节点N，用于产生表示由光电二极管1观察到的场景的信号。金属屏蔽5布置在集成节点N周围。金属屏蔽5连接到读出电路的输出端 并且被配置为具有与集成节点N的电位相同方向的电位变化。版权所有：（C）2013，JPO＆INPIT

    DETECTOR OF ELECTROMAGNETIC WAVE SUCH AS INFRARED RAY
    7.
    发明专利
    DETECTOR OF ELECTROMAGNETIC WAVE SUCH AS INFRARED RAY 失效

    公开(公告)号：JPH08240480A

    公开(公告)日：1996-09-17

    申请号：JP33901995

    申请日：1995-12-26

    Applicant: SOFRADIR

    Inventor： MONTANARI JEAN-LOUIS

    IPC: G01J1/02 ,  F25D19/00 ,  G01J1/42 ,  G01J5/02 ,  G01J5/06 ,  H01L31/024

    Abstract: PROBLEM TO BE SOLVED: To facilitate electrical connection through a standardized connector even for a large apparatus by providing the low temperature finger of a cryostat with a mechanically secured cooling plate. SOLUTION: A cryostat is provided with cylindrical casings coaxially wherein the outer casing is utilized as a window support and the inner casing is constituted of low temperature fingers. A connecting circuit 7 is secured mechanically to a cooling plate 2 and exchanges heat with the cooling plate 2. The cooling plate 2 is provided with two recesses 16 symmetrically wherein each recess 16 extends toward the center of cooling plate 2 and terminates at a through slot. Each through slot opens to the outside of low temperature finger. The recess 16 contains a relay connecting member 13 through an epoxy based adhesive. The cooling plate 2 itself can be regulated by inserting and bonding a relay connecting member 13 matching on the detector depending on the dimensions or type of the detector to be used.

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