公开(公告)号：WO2008027305A3

公开(公告)日：2008-05-02

申请号：PCT/US2007018711

申请日：2007-08-24

Applicant: LAM RES CORP ,  STEGER ROBERT ,  COMENDANT KEITH

Inventor： STEGER ROBERT ,  COMENDANT KEITH

IPC: H01L21/683

CPC classification number: H01L21/67248 ,  H01L21/6831 ,  Y10T279/23

Abstract: A method of tuning the thermal conductivity of an electrostatic chuck (ESC) support assembly comprises measuring the temperature at a plurality of sites on a support assembly surface in which each site is associated with a given cell, determining from the measurements any fractional reduction in area suggested for each cell, and removing material from the support assembly surface within each cell in accordance with the suggested fractional reduction in order to decrease thermal conductivity in that cell. The material removal can result in an improvement to the equilibrium temperature uniformity of the electrostatic chuck support assembly at the chuck surface of an electrostatic chuck bonded to the support assembly surface, or can result in an equilibrium temperature profile of the ESC support assembly which approaches or achieves a target equilibrium temperature profile. Thermal conductivity tuning can thus take place by a method comprising defining a cell structure, determining the target areal density of each cell and removing a fractional area of material to achieve the target areal density for that cell. Material removal can be effected by drilling, routing, laser machining or grit blast machining on an X-Y table.

Abstract translation: 调节静电吸盘（ESC）支撑组件的热导率的方法包括测量支撑组件表面上的多个位置处的温度，其中每个位置与给定的电池相关联，根据测量结果确定区域中的任何分数减少 建议用于每个电池，并且根据建议的分数减少从每个电池内的支撑组件表面移除材料以降低该电池中的热导率。 材料去除可导致静电卡盘支撑组件在与支撑组件表面结合的静电卡盘的卡盘表面处的平衡温度均匀性的改善，或者可导致ESC支撑组件的平衡温度分布， 达到目标平衡温度曲线。 因此，热导率调整可以通过包括以下方法进行：限定单元结构;确定每个单元的目标面密度;以及去除材料的分数区域以实现该单元的目标面密度。 材料去除可以通过在X-Y台上进行钻孔，布线，激光加工或喷砂加工来实现。

公开(公告)号：WO2008027305A8

公开(公告)日：2008-03-06

申请号：PCT/US2007/018711

申请日：2007-08-24

Applicant: LAM RESEARCH CORPORATION ,  STEGER, Robert ,  COMENDANT, Keith

Inventor： STEGER, Robert ,  COMENDANT, Keith

IPC: H01L21/683

Abstract: A method of tuning the thermal conductivity of an electrostatic chuck (ESC) support assembly comprises measuring the temperature at a plurality of sites on a support assembly surface in which each site is associated with a given cell, determining from the measurements any fractional reduction in area suggested for each cell, and removing material from the support assembly surface within each cell in accordance with the suggested fractional reduction in order to decrease thermal conductivity in that cell. The material removal can result in an improvement to the equilibrium temperature uniformity of the electrostatic chuck support assembly at the chuck surface of an electrostatic chuck bonded to the support assembly surface, or can result in an equilibrium temperature profile of the ESC support assembly which approaches or achieves a target equilibrium temperature profile. Thermal conductivity tuning can thus take place by a method comprising defining a cell structure, determining the target areal density of each cell and removing a fractional area of material to achieve the target areal density for that cell. Material removal can be effected by drilling, routing, laser machining or grit blast machining on an X-Y table.

公开(公告)号：WO2005013310A3

公开(公告)日：2005-05-12

申请号：PCT/US2004022060

申请日：2004-07-07

Applicant: LAM RES CORP ,  STEGER ROBERT J

Inventor： STEGER ROBERT J

IPC: H01J37/32 ,  C23C16/44

CPC classification number: H01J37/32458 ,  H01J37/321 ,  H01J37/32174

Abstract: A plasma processing reactor (200) includes a chamber (202) and a substrate support (216). The chamber includes an opening extending through a sidewall of the chamber. The substrate support is removably mounted within the chamber. The opening of the chamber is large enough to allow the substrate support to be removed from the chamber through the opening. A portion of a surface of the inner sidewall and the substrate support within the chamber has a coating (228). The coating is made of an electrically resistive material. The coating creates an impedance a long the portion of the surface of the inner sidewall, which would otherwise carry a greater portion of the RF return current than the opposite side of the chamber. The coating also creates an impedance along the substrate support so that t he density of the RF return current along the surface of the inner walls of the chamber is substantially more uniform

Abstract translation: 等离子体处理反应器（200）包括腔室（202）和衬底支撑件（216）。 腔室包括延伸穿过腔室的侧壁的开口。 衬底支撑件可移除地安装在腔室内。 室的开口足够大以允许衬底支撑件通过开口从腔室移除。 内侧壁的表面的一部分和腔室内的基底支撑件具有涂层（228）。 涂层由电阻材料制成。 该涂层在内侧壁的表面部分产生较长的阻抗，否则其将承受比腔的相对侧更大部分的RF返回电流。 涂层还沿衬底支撑件产生阻抗，使得沿室的内壁表面的RF返回电流的密度基本上更均匀

公开(公告)号：WO2005028994A2

公开(公告)日：2005-03-31

申请号：PCT/US2004/025517

申请日：2004-08-05

Applicant: LAM RESEARCH CORPORATION ,  PERRY, Andrew ,  STEGER, Robert ,  BENJAMIN, Neil

Inventor： PERRY, Andrew ,  STEGER, Robert ,  BENJAMIN, Neil

IPC: G01B9/00

CPC classification number: G01C1/00 ,  H01J2237/30438 ,  H01L21/681

Abstract: An optical alignment system for use in a semiconductor processing system is provided. The optical alignment system includes a wafer chuck that has an alignment feature integrated into the top surface of the wafer chuck. In addition, a beam-forming system, which is capable of emitting an optical signal onto the alignment feature, is disposed above the wafer chuck. Also, a detector in included that can detect an amplitude of the optical signal emitted onto the alignment feature. In one aspect, the alignment feature can be a reflective alignment feature that reflects a portion of the optical signal back to the beam detector. In additional aspect, the alignment feature can be a transmittance alignment feature capable of allowing a portion of the optical signal to pass through the wafer chuck to the detector. In this aspect, the detector can be disposed below the wafer chuck.

Abstract translation: 提供一种用于半导体处理系统的光学对准系统。 光学对准系统包括具有集成到晶片卡盘的顶表面中的对准特征的晶片卡盘。 此外，能够将光信号发射到对准特征上的波束形成系统设置在晶片卡盘上方。 此外，包括的检测器可以检测发射到对准特征上的光信号的幅度。 在一个方面，对准特征可以是将光信号的一部分反射回光束检测器的反射对准特征。 在另外的方面，对准特征可以是能够允许光信号的一部分通过晶片卡盘到达检测器的透射率对准特征。 在这方面，检测器可以设置在晶片卡盘的下方。

公开(公告)号：WO2004077505A2

公开(公告)日：2004-09-10

申请号：PCT/US2004004134

申请日：2004-02-12

Applicant: LAM RES CORP ,  STEGER ROBERT J

Inventor： STEGER ROBERT J

IPC: F27B5/14 ,  F27B17/00 ,  F27D19/00 ,  F27D21/00 ,  F27D99/00 ,  H01J37/32 ,  H01L20060101 ,  H01L21/00 ,  H01L21/306 ,  H01L

CPC classification number: F27D99/0006 ,  F27B5/14 ,  F27B17/0025 ,  F27D19/00 ,  F27D21/0014 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67248

Abstract: An etching system for etching a wafer of a material has a measuring device, an etching chamber, and a controller. The measuring device measures the critical dimension test feature (CD) along the profile of the wafer at a plurality of preset locations. The etching chamber receives the wafer from the measuring device. The etching chamber includes a chuck supporting the wafer and a plurality of heating elements disposed within the chuck. Each heating element is positioned adjacent to each preset location on the wafer. The etching system controller is coupled to the measuring device to receive the actual measured CD's for a particular wafer. The etching system controller is also connected to the plurality of heating elements. The controller adjusts the temperature of each heating element during a process to reduce the variation of critical dimensions among the plurality of preset locations by using temperature dependent etching characteristics of the etch process to compensate for CD variation introduced by the lithography process preceding the etch process.

Abstract translation: 用于蚀刻材料的晶片的蚀刻系统具有测量装置，蚀刻室和控制器。 测量装置在多个预设位置测量沿着晶片轮廓的临界尺寸测试特征（CD）。 蚀刻室从测量装置接收晶片。 蚀刻室包括支撑晶片的卡盘和设置在卡盘内的多个加热元件。 每个加热元件邻近晶片上的每个预设位置定位。 蚀刻系统控制器耦合到测量装置以接收特定晶片的实际测量的CD。 蚀刻系统控制器也连接到多个加热元件。 控制器通过使用蚀刻工艺的温度依赖蚀刻特性来补偿由蚀刻工艺之前的光刻工艺引入的CD变化，来调节在加工过程中每个加热元件的温度以减小多个预设位置之间的临界尺寸的变化。

公开(公告)号：WO2007064435A3

公开(公告)日：2009-04-30

申请号：PCT/US2006042577

申请日：2006-11-01

Applicant: LAM RES CORP ,  STEGER ROBERT

Inventor： STEGER ROBERT

IPC: G01R31/26 ,  H01L21/66

CPC classification number: H01L21/6875 ,  H01L21/6831 ,  Y10T29/49002

Abstract: A method of modifying the heat transfer coefficient profile of an electrostatic chuck by configuring the areal density of a mesa configuration of an insulating layer of the chuck is provided. A method of modifying the capacitance profile of an electrostatic chuck by adjustment or initial fabrication of the height of a mesa configuration of an insulating layer of the chuck is further provided. The heat transfer coefficient at a given site can be measured by use of a heat flux probe, whereas the capacitance at a given site can be measured by use of a capacitance probe. The probes are placed on the insulating surface of the chuck and may include a plurality of mesas in a single measurement. A plurality of measurements made across the chuck provide a heat transfer coefficient profile or a capacitance profile, from which a target mesa areal density and a target mesa height are determined. The target density and height are achieved mechanically; the target density by mechanically adjusting the areal density of existing mesas; and the target height by creating or deepening low areas surrounding planned or existing mesas, respectively. This can be accomplished using any of known techniques for controlled material removal such as laser machining or grit blast machining on an X-Y table.

Abstract translation: 提供了通过配置卡盘的绝缘层的台面构造的面密度来改变静电卡盘的传热系数分布的方法。 还提供了通过调整或初始制造卡盘绝缘层的台面构造的高度来改变静电卡盘的电容分布的方法。 可以通过使用热通量探针来测量给定部位的传热系数，而可以通过使用电容探针来测量给定部位的电容。 探针被放置在卡盘的绝缘表面上，并且可以在单个测量中包括多个台面。 在卡盘上进行的多次测量提供传热系数分布或电容分布，从中确定目标台面面积密度和目标台面高度。 目标密度和高度机械地实现; 目标密度通过机械调节现有台面的面密度; 并分别通过创造或加深围绕计划的或现有台面的低地区来实现目标的高度。 这可以使用用于控制材料去除的已知技术来实现，例如在X-Y工作台上的激光加工或喷砂加工。

公开(公告)号：WO2008027305A2

公开(公告)日：2008-03-06

申请号：PCT/US2007018711

申请日：2007-08-24

Applicant: LAM RES CORP ,  STEGER ROBERT ,  COMENDANT KEITH

Inventor： STEGER ROBERT ,  COMENDANT KEITH

IPC: H05B1/02 ,  B23K9/02 ,  H01L21/683

CPC classification number: H01L21/67248 ,  H01L21/6831 ,  Y10T279/23

Abstract: A method of tuning the thermal conductivity of an electrostatic chuck (ESC) support assembly comprises measuring the temperature at a plurality of sites on a support assembly surface in which each site is associated with a given cell, determining from the measurements any fractional reduction in area suggested for each cell, and removing material from the support assembly surface within each cell in accordance with the suggested fractional reduction in order to decrease thermal conductivity in that cell. The material removal can result in an improvement to the equilibrium temperature uniformity of the electrostatic chuck support assembly at the chuck surface of an electrostatic chuck bonded to the support assembly surface, or can result in an equilibrium temperature profile of the ESC support assembly which approaches or achieves a target equilibrium temperature profile. Thermal conductivity tuning can thus take place by a method comprising defining a cell structure, determining the target areal density of each cell and removing a fractional area of material to achieve the target areal density for that cell. Material removal can be effected by drilling, routing, laser machining or grit blast machining on an X-Y table.

Abstract translation: 调整静电卡盘（ESC）支撑组件的导热性的方法包括测量支撑组件表面上的多个位置处的温度，其中每个部位与给定的电池相关联，从测量中确定任何部分面积的减小 建议每个电池，并根据建议的分数还原从每个电池中的支撑组件表面去除材料，以降低该电池中的热导率。 材料去除可以改善静电卡盘支撑组件在与支撑组件表面接合的静电卡盘的卡盘表面处的平衡温度均匀性，或者可以导致ESC支撑组件的平衡温度分布接近或接近 达到目标平衡温度曲线。 因此，热导率调节可以通过包括限定单元结构，确定每个单元的目标面积密度和去除材料的分数区域以实现该单元的目标面积密度的方法发生。 通过在X-Y台上进行钻孔，布线，激光加工或砂粒加工可以实现材料去除。

公开(公告)号：WO2007078656A2

公开(公告)日：2007-07-12

申请号：PCT/US2006047183

申请日：2006-12-11

Applicant: LAM RES CORP ,  STEGER ROBERT J

Inventor： STEGER ROBERT J

IPC: B08B3/12

CPC classification number: B08B3/12 ,  B08B7/00

Abstract: A method of cleaning an ESC comprises immersing a ceramic surface of the ESC in dielectric fluid; spacing the ceramic surface of the ESC apart from a conductive surface such that the dielectric fluid fills a gap between the ceramic surface of the ESC and the conductive surface; and subjecting the dielectric fluid to ultrasonic agitation while simultaneously applying voltage to the ESC.

Abstract translation: 清洁ESC的方法包括将ESC的陶瓷表面浸入介电流体中; 将ESC的陶瓷表面与导电表面隔开，使得介电流体填充ESC的陶瓷表面和导电表面之间的间隙; 并对电介质流体进行超声波搅拌，同时向ESC施加电压。

公开(公告)号：WO2006088697A2

公开(公告)日：2006-08-24

申请号：PCT/US2006004284

申请日：2006-02-08

Applicant: LAM RES CORP ,  STEGER ROBERT J

Inventor： STEGER ROBERT J

IPC: C23F1/00 ,  C23C16/00

CPC classification number: C23C16/45565 ,  H01J37/3244 ,  H01L21/67017 ,  H01L21/67069 ,  Y10T29/49771

Abstract: Methods for making gas distribution members for plasma processing apparatuses are provided. The gas distribution members can be electrodes, gas distribution plates, or other members. The methods include fabricating gas injection holes in a gas distribution member by a suitable technique, e.g., a mechanical fabrication technique, measuring gas flow through the gas distribution member, and then adjusting the permeability of the gas distribution member by the same fabrication technique, or by a different technique, e.g., laser drilling. The permeability of the gas distribution member can be adjusted at one or more zones of the member.

Abstract translation: 提供了制造等离子体处理装置的气体分配构件的方法。 气体分配构件可以是电极，气体分配板或其它构件。 所述方法包括通过合适的技术（例如机械制造技术）测量气体分配构件中的气体注入孔，测量通过气体分配构件的气体流量，然后通过相同的制造技术调节气体分配构件的渗透性，或 通过不同的技术，例如激光钻孔。 可以在构件的一个或多个区域调节气体分配构件的渗透性。

公开(公告)号：WO2005052995A3

公开(公告)日：2005-07-28

申请号：PCT/US2004038287

申请日：2004-11-15

Applicant: LAM RES CORP ,  STEGER ROBERT J

Inventor： STEGER ROBERT J

IPC: G01J5/00 ,  G01K15/00 ,  H01L20060101

CPC classification number: G01J5/0003 ,  G01J5/0007

Abstract: In a plasma processing system, a method of determining the temperature of a substrate is disclosed. The method includes positioning the substrate on a substrate support structure, wherein the substrate support includes a chuck. The method further includes creating a temperature calibration curve for the substrate, the temperature calibration curve being created by measuring at least a first substrate temperature with an electromagnetic measuring device, and measuring a first chuck temperature with a physical measuring device during a first isothermal state. The method also includes employing a measurement from the electromagnetic measurement device and the temperature calibration curve to determine a temperature of the substrate during plasma processing.

Abstract translation: 在等离子体处理系统中，公开了一种确定衬底温度的方法。 该方法包括将衬底定位在衬底支撑结构上，其中衬底支撑件包括卡盘。 所述方法还包括为所述基板创建温度校准曲线，所述温度校准曲线是通过用电磁测量装置测量至少第一基板温度，以及在第一等温状态下用物理测量装置测量第一卡盘温度而产生的。 该方法还包括采用来自电磁测量装置和温度校准曲线的测量来确定等离子体处理期间的衬底的温度。