Light-emitting device, electronic apparatus, and light-emitting device manufacturing method
    5.
    发明授权
    Light-emitting device, electronic apparatus, and light-emitting device manufacturing method 有权
    发光装置,电子装置和发光装置的制造方法

    公开(公告)号:US07915620B2

    公开(公告)日:2011-03-29

    申请号:US12369463

    申请日:2009-02-11

    Abstract: Disclosed is a light-emitting device. The light-emitting device includes an EL layer and a heat dissipation layer. The EL layer includes a first semiconductor layer, a second semiconductor layer, and an active layer, the first semiconductor layer having a first conductivity type that is one of n type and p type, the second semiconductor layer having a second conductivity type that is opposite to the first conductivity type, the active layer being provided between the first semiconductor layer and the second semiconductor layer. The heat dissipation layer has the first conductivity type and is bonded to a side of the EL layer closer to the second semiconductor layer than the first semiconductor layer.

    Abstract translation: 公开了一种发光装置。 发光器件包括EL层和散热层。 EL层包括第一半导体层,第二半导体层和有源层,第一半导体层具有作为n型和p型之一的第一导电类型,第二半导体层具有相反的第二导电类型 对于第一导电类型,有源层设置在第一半导体层和第二半导体层之间。 散热层具有第一导电类型,并且被结合到比第一半导体层更靠近第二半导体层的EL层的一侧。

    THERMOELECTRIC DEVICE, MANUFACTURING METHOD FOR MANUFACTURING THERMOELECTRIC DEVICE, CONTROL SYSTEM FOR CONTROLLING THERMOELECTRIC DEVICE, AND ELECTRONIC APPLIANCE
    6.
    发明申请
    THERMOELECTRIC DEVICE, MANUFACTURING METHOD FOR MANUFACTURING THERMOELECTRIC DEVICE, CONTROL SYSTEM FOR CONTROLLING THERMOELECTRIC DEVICE, AND ELECTRONIC APPLIANCE 审中-公开
    热电设备,制造热电设备的制造方法,用于控制热电设备的控制系统和电子设备

    公开(公告)号:US20100263701A1

    公开(公告)日:2010-10-21

    申请号:US12755816

    申请日:2010-04-07

    Abstract: A thermoelectric device includes rows of thermoelectric elements, each of which includes p-type thermoelectric elements and n-type thermoelectric elements that are alternately arranged in a first direction, the n-type thermoelectric elements each having a junction area electrically connected to one of the p-type thermoelectric elements that adjoins the n-type thermoelectric element; first insulators; and a second insulator. In the thermoelectric device, the first insulators are each arranged between a corresponding one of the p-type thermoelectric elements and one of the n-type thermoelectric elements that adjoins the p-type thermoelectric element. The rows of the thermoelectric elements are arranged in a second direction perpendicular to the first direction and connected to each other. The second insulator is arranged between the rows of thermoelectric elements in such a manner that the p-type thermoelectric elements and n-type thermoelectric elements of the rows of the thermoelectric elements are electrically connected in series.

    Abstract translation: 热电装置包括热电元件列,每个热电元件包括​​沿第一方向交替布置的p型热电元件和n型热电元件,n型热电元件各自具有电连接到 邻接n型热电元件的p型热电元件; 第一绝缘子 和第二绝缘体。 在热电装置中,第一绝缘体分别配置在p型热电元件中的相应的一个和邻接p型热电元件的n型热电元件中的一个之间。 热电元件排沿垂直于第一方向的第二方向排列并相互连接。 第二绝缘子以热电元件行的p型热电元件和n型热电元件串联电连接的方式配置在热电元件列之间。

    Hypotensors
    9.
    发明授权
    Hypotensors 失效
    低压传感器

    公开(公告)号:US06900020B2

    公开(公告)日:2005-05-31

    申请号:US10257050

    申请日:2001-04-09

    Abstract: There are provided a method for selection of a substance which is capable of controlling activation of prorenin where an adjusting ability of the activation of prorenin by protein-protein interaction in a profragment region of prorenin as indicator is used; a prorenin activation controlling substance having a function of controlling the activation of prorenin based on protein-protein interaction by a profragment region of prorenin; and hypotensor, organ hypertrophy suppressor and arterial thickening suppressor containing the prorenin activation controlling substance as an effective ingredient.

    Abstract translation: 提供了一种选择能够控制肾上腺素能活化的物质的方法,其中使用在作为指示剂的肾上腺素的分段区域中通过蛋白质 - 蛋白质相互作用的蛋白质 - 蛋白质相互作用的调节能力; 具有根据蛋白质 - 蛋白质相互作用的蛋白质 - 蛋白质相互作用控制肾上腺素的活化的功能的肾上腺素能激活控制物质; 和低血压,器官肥大抑制剂和含有作为有效成分的肾上腺素激活控制物质的动脉增厚抑制剂。

    Crystal growth method of an oxide and multi-layered structure of oxides
    10.
    发明授权
    Crystal growth method of an oxide and multi-layered structure of oxides 失效
    氧化物的晶体生长方法和氧化物的多层结构

    公开(公告)号:US06749686B2

    公开(公告)日:2004-06-15

    申请号:US10127155

    申请日:2002-04-19

    Abstract: An epitaxial rare earth oxide (110)/silicon (001) structure is realized by epitaxially growing a rare earth oxide such as cerium dioxide in the (110) orientation on a (001)-oriented silicon substrate at a growth temperature lower than conventional ones. For this purpose, the surface of the (001)-oriented Si substrate is processed into a dimer structure by 2×1, 1×2 surface reconstruction, and a rare earth oxide of a cubic system or a tetragonal system, such as CeO2 film, is epitaxially grown in the (110) orientation on the Si substrate in an atmosphere containing an oxidic gas by using a source material made up of at least one kind of rare earth element. During this growth, a source material containing at least one kind of rare earth element is supplied after the supply of an oxidic gas is supplied onto the surface of the Si substrate.

    Abstract translation: 外延稀土氧化物(110)/硅(001)结构通过在(001)取向的硅衬底上以比常规的生长温度外延生长(110)取向中的二氧化铈等稀土氧化物 。 为此,将(001)取向的Si衬底的表面通过2x1,1×2表面重建处理成二聚体结构,并且外延生长立方晶系或四方晶系稀土氧化物,例如CeO 2膜 通过使用由至少一种稀土元素构成的源材料,在含有氧化性气体的气氛中在Si衬底上的(110)取向。 在该生长期间,在向Si衬底的表面供给氧化剂气体之后,供给含有至少一种稀土元素的源材料。

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