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公开(公告)号：KR1020110053728A
公开(公告)日：2011-05-24
申请号：KR1020090110388
申请日：2009-11-16
Applicant: (재)한국나노기술원
IPC: H01L33/22
Abstract: PURPOSE: A method for manufacturing a light emitting diode using a metal protection layer is provided to prevent the property deterioration of an LED device by forming a protection layer without plasma damages. CONSTITUTION: A metal protection layer(250) is formed on an n-type nitride semiconductor layer(240). A part of the surface of the n type nitride semiconductor is exposed by patterning the metal protection layer. The surface of the n type nitride semiconductor layer is roughened by treating the exposed surface of the n type nitride semiconductor layer. The n type nitride semiconductor layer is an isolated n-GaN formed on a Cu plating.
Abstract translation: 目的：提供一种使用金属保护层制造发光二极管的方法，通过形成没有等离子体损伤的保护层来防止LED器件的特性劣化。 构成：在n型氮化物半导体层（240）上形成金属保护层（250）。 通过图案化金属保护层，使n型氮化物半导体的表面的一部分露出。 通过处理n型氮化物半导体层的暴露表面，使n型氮化物半导体层的表面粗糙化。 n型氮化物半导体层是在Cu电镀上形成的分离的n-GaN。
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公开(公告)号：KR1020110053707A
公开(公告)日：2011-05-24
申请号：KR1020090110359
申请日：2009-11-16
Applicant: (재)한국나노기술원
IPC: H01L33/22
Abstract: PURPOSE: A method for manufacturing a light emitting diode using a metal protection layer is provided to reduce the number of processes by forming an n-ohmic metal layer and a protection layer made of the same materials. CONSTITUTION: A photoresist pattern(260) is formed on an n type nitride semiconductor(240) to expose the part on which an n-ohmic metal layer is formed. A metal protection layer(250) is formed on the n type nitride semiconductor to cover the photoresist pattern and the n type nitride semiconductor. The surface of the n type nitride semiconductor is partially exposed by removing the photoresist pattern and a metal protection layer formed on the photoresist pattern. The surface of the n type nitride semiconductor is roughened by processing the exposed surface of the n type nitride semiconductor.
Abstract translation: 目的：提供一种使用金属保护层制造发光二极管的方法，以通过形成由相同材料制成的n欧姆金属层和保护层来减少工艺数量。 构成：在n型氮化物半导体（240）上形成光致抗蚀剂图案（260）以暴露其上形成有n-欧姆金属层的部分。 在n型氮化物半导体上形成金属保护层（250）以覆盖光致抗蚀剂图案和n型氮化物半导体。 通过去除光致抗蚀剂图案和形成在光致抗蚀剂图案上的金属保护层，n型氮化物半导体的表面部分露出。 通过处理n型氮化物半导体的露出表面，使n型氮化物半导体的表面粗糙化。
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公开(公告)号：KR101081416B1
公开(公告)日：2011-11-08
申请号：KR1020090110359
申请日：2009-11-16
Applicant: (재)한국나노기술원
IPC: H01L33/22
Abstract: 본발명은 n-오믹금속층과보호층을동일한물질을사용함으로써공정단계를감소시키고, 낮은온도에서플라즈마인가없이보호층을증착할수 있는발광다이오드제조방법에관한것이다. 본발명에따른발광다이오드제조방법은 n형질화물반도체상에 n-오믹(ohmic) 금속층이형성될부분이노출되도록포토레지스트패턴(photo resist pattern)을형성한다. 그리고포토레지스트패턴과상기 n형질화물반도체가덮이도록상기 n 형질화물반도체상에금속보호층(metallic protection layer)을형성한다. 그리고포토레지스트패턴상에형성되어있는금속보호층과포토레지스트패턴을함께제거하여, n형질화물반도체의표면일부를노출시킨다. 그리고 n형질화물반도체의표면이노출된부분을표면처리하여상기 n형질화물반도체표면을거칠게(roughening) 한다.
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公开(公告)号：KR101081418B1
公开(公告)日：2011-11-08
申请号：KR1020090110388
申请日：2009-11-16
Applicant: (재)한국나노기술원
IPC: H01L33/22
Abstract: 본발명은 n-오믹금속층과보호층을동일한물질을사용함으로써공정단계를감소시키고, 낮은온도에서플라즈마인가없이보호층을증착할수 있는발광다이오드제조방법에관한것이다. 본발명에따른발광다이오드제조방법은 n형질화물반도체상에금속보호층(metallic protection layer)을형성한후, 금속보호층을패터닝하여상기 n형질화물반도체의표면일부를노출시킨다. 그리고 n형질화물반도체의표면이노출된부분을표면처리하여상기 n형질화물반도체표면을거칠게(roughening) 한다.
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