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公开(公告)号：KR1020110053707A
公开(公告)日：2011-05-24
申请号：KR1020090110359
申请日：2009-11-16
Applicant: (재)한국나노기술원
IPC: H01L33/22
Abstract: PURPOSE: A method for manufacturing a light emitting diode using a metal protection layer is provided to reduce the number of processes by forming an n-ohmic metal layer and a protection layer made of the same materials. CONSTITUTION: A photoresist pattern(260) is formed on an n type nitride semiconductor(240) to expose the part on which an n-ohmic metal layer is formed. A metal protection layer(250) is formed on the n type nitride semiconductor to cover the photoresist pattern and the n type nitride semiconductor. The surface of the n type nitride semiconductor is partially exposed by removing the photoresist pattern and a metal protection layer formed on the photoresist pattern. The surface of the n type nitride semiconductor is roughened by processing the exposed surface of the n type nitride semiconductor.
Abstract translation: 目的：提供一种使用金属保护层制造发光二极管的方法，以通过形成由相同材料制成的n欧姆金属层和保护层来减少工艺数量。 构成：在n型氮化物半导体（240）上形成光致抗蚀剂图案（260）以暴露其上形成有n-欧姆金属层的部分。 在n型氮化物半导体上形成金属保护层（250）以覆盖光致抗蚀剂图案和n型氮化物半导体。 通过去除光致抗蚀剂图案和形成在光致抗蚀剂图案上的金属保护层，n型氮化物半导体的表面部分露出。 通过处理n型氮化物半导体的露出表面，使n型氮化物半导体的表面粗糙化。
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公开(公告)号：KR1020170020600A
公开(公告)日：2017-02-23
申请号：KR1020150113923
申请日：2015-08-12
Applicant: (재)한국나노기술원
Abstract: 본발명은대면적적층구조전극의형성방법에관한것으로서, 서로상이한이온화경향을갖는제1 금속및 제2 금속을이용하여적층구조를형성하는단계, 및상기적층구조를전원의일단에연결하고, 바람직하게는상기제1 금속및 제2 금속보다이온화경향이낮은제3 물질을상기전원의타단에연결하는단계를포함하되, 상기적층구조및 상기제3 물질은전해질수용액에담겨진것을특징으로한다. 본발명에따르면짧은공정시간을가지며, 대량생산이가능한대면적적층구조전극의형성방법을제공한다.
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公开(公告)号：KR101105249B1
公开(公告)日：2012-01-17
申请号：KR1020090111008
申请日：2009-11-17
Applicant: (재)한국나노기술원
IPC: H01L21/027
Abstract: 본 발명은 패터닝된 그래핀을 원하는 위치에 전사할 수 있고, 그라파이트화 촉매의 식각에 따른 오염 문제가 없는 그래핀 패턴 형성방법에 관한 것이다. 본 발명에 따른 그래핀 패턴 형성방법은 그라파이트(graphite)화 촉매로 이루어지고, 패터닝되어 있는 임프린트(imprint) 스탬프를 제조한 후, 임프린트 스탬프 상에 그래핀(graphene)을 형성하고, 임프린트 방법을 이용하여 임프린트 스탬프 상에 형성된 그래핀을 기판 상에 전사한다.
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公开(公告)号：KR101068176B1
公开(公告)日：2011-09-27
申请号：KR1020100054210
申请日：2010-06-09
Applicant: (재)한국나노기술원
IPC: H01L29/866
CPC classification number: H01L29/866 , H01L25/167
Abstract: 본 발명은 발광 소자 패키지에 장착되는 제너 다이오드에 있어, 발광 효율을 향상시킬 수 있는 제너 다이오드에 관한 것이다. 본 발명에 따른 제너 다이오드는 측면이 바닥면과 경사지게 형성되며 제1 도전형으로 도핑되어 있는 기판과, 기판의 바닥면에 형성되어 있는 하부 전극과, 기판의 상부에 형성되며 제1 도전형과 반대되는 제2 도전형으로 도핑되어 있는 활성 영역과, 활성 영역 상에 형성되어 있는 상부 전극과, 기판의 측면과 상면에 형성되어 있는 절연막과, 절연막 상에 형성되되 상부 전극과 전기적으로 연결되지 않도록 형성되어 있는 반사막을 구비한다.
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公开(公告)号：KR1020110053728A
公开(公告)日：2011-05-24
申请号：KR1020090110388
申请日：2009-11-16
Applicant: (재)한국나노기술원
IPC: H01L33/22
Abstract: PURPOSE: A method for manufacturing a light emitting diode using a metal protection layer is provided to prevent the property deterioration of an LED device by forming a protection layer without plasma damages. CONSTITUTION: A metal protection layer(250) is formed on an n-type nitride semiconductor layer(240). A part of the surface of the n type nitride semiconductor is exposed by patterning the metal protection layer. The surface of the n type nitride semiconductor layer is roughened by treating the exposed surface of the n type nitride semiconductor layer. The n type nitride semiconductor layer is an isolated n-GaN formed on a Cu plating.
Abstract translation: 目的：提供一种使用金属保护层制造发光二极管的方法，通过形成没有等离子体损伤的保护层来防止LED器件的特性劣化。 构成：在n型氮化物半导体层（240）上形成金属保护层（250）。 通过图案化金属保护层，使n型氮化物半导体的表面的一部分露出。 通过处理n型氮化物半导体层的暴露表面，使n型氮化物半导体层的表面粗糙化。 n型氮化物半导体层是在Cu电镀上形成的分离的n-GaN。
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Patent Agency Ranking
公开(公告)号：KR101133181B1
公开(公告)日：2012-04-09
申请号：KR1020100048020
申请日：2010-05-24
Applicant: (재)한국나노기술원
IPC: H01L31/0224
Abstract: PURPOSE: A graphene thin film in which a pattern is formed is provided to improve adhesive force with a high position film by including dangling bond and a chemical functional group in the unevenness part of a graphene layer. CONSTITUTION: A graphene thin film comprises a graphene layer(210) and a chemical functional group(220). Concavo-convex is formed on the surface of the graphene layer. The density of edge part is increased when the concavo-convex is formed on the surface of the graphene layer. The chemical functional group is formed on the surface of the graphene layer. The chemical functional group is more than one among phenol, carbonyl, carboxyl, quinine, and lactone.
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公开(公告)号：KR101081418B1
公开(公告)日：2011-11-08
申请号：KR1020090110388
申请日：2009-11-16
Applicant: (재)한국나노기술원
IPC: H01L33/22
Abstract: 본발명은 n-오믹금속층과보호층을동일한물질을사용함으로써공정단계를감소시키고, 낮은온도에서플라즈마인가없이보호층을증착할수 있는발광다이오드제조방법에관한것이다. 본발명에따른발광다이오드제조방법은 n형질화물반도체상에금속보호층(metallic protection layer)을형성한후, 금속보호층을패터닝하여상기 n형질화물반도체의표면일부를노출시킨다. 그리고 n형질화물반도체의표면이노출된부분을표면처리하여상기 n형질화물반도체표면을거칠게(roughening) 한다.
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公开(公告)号：KR1020110054386A
公开(公告)日：2011-05-25
申请号：KR1020090111008
申请日：2009-11-17
Applicant: (재)한국나노기술원
IPC: H01L21/027
CPC classification number: G03F7/0002 , B29C59/022 , H01L21/0332
Abstract: PURPOSE: A method for forming a graphene using an imprint method is provided to prevent metal contamination by omitting a graphite catalyst through an etching process. CONSTITUTION: A patterned imprint stamp(210) is manufactured. The imprint stamp is made of graphite catalyst. A graphene(220) is formed by supplying and processing vapor carbon supply source to the imprint stamp thermally. The graphene formed on the imprint stamp is transferred on the substrate by using the imprint method. A graphene pattern(240) is formed on the substrate for manufacturing a device.
Abstract translation: 目的：提供使用压印方法形成石墨烯的方法，以通过蚀刻工艺省略石墨催化剂来防止金属污染。 构成：制作图案印记印章（210）。 印记邮票由石墨催化剂制成。 石墨烯（220）是通过向压印印模热供应和处理蒸气碳源而形成的。 在压印上形成的石墨烯通过使用压印方法在基板上转印。 在用于制造器件的衬底上形成石墨烯图案（240）。
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公开(公告)号：KR1020110128523A
公开(公告)日：2011-11-30
申请号：KR1020100048020
申请日：2010-05-24
Applicant: (재)한국나노기술원
IPC: H01L31/0224
Abstract: PURPOSE: A graphene thin film in which a pattern is formed is provided to improve adhesive force with a high position film by including dangling bond and a chemical functional group in the unevenness part of a graphene layer. CONSTITUTION: A graphene thin film comprises a graphene layer(210) and a chemical functional group(220). Concavo-convex is formed on the surface of the graphene layer. The density of edge part is increased when the concavo-convex is formed on the surface of the graphene layer. The chemical functional group is formed on the surface of the graphene layer. The chemical functional group is more than one among phenol, carbonyl, carboxyl, quinine, and lactone.
Abstract translation: 目的：提供形成图案的石墨烯薄膜，以通过在石墨烯层的不均匀部分中包括悬挂键和化学官能团来提高与高位置膜的粘合力。 构成：石墨烯薄膜包括石墨烯层（210）和化学官能团（220）。 在石墨烯层的表面上形成凹凸。 当在石墨烯层的表面上形成凹凸时，边缘部分的密度增加。 化学官能团形成在石墨烯层的表面上。 苯酚，羰基，羧基，奎宁和内酯中的化学官能团多于一种。
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公开(公告)号：KR101081416B1
公开(公告)日：2011-11-08
申请号：KR1020090110359
申请日：2009-11-16
Applicant: (재)한국나노기술원
IPC: H01L33/22
Abstract: 본발명은 n-오믹금속층과보호층을동일한물질을사용함으로써공정단계를감소시키고, 낮은온도에서플라즈마인가없이보호층을증착할수 있는발광다이오드제조방법에관한것이다. 본발명에따른발광다이오드제조방법은 n형질화물반도체상에 n-오믹(ohmic) 금속층이형성될부분이노출되도록포토레지스트패턴(photo resist pattern)을형성한다. 그리고포토레지스트패턴과상기 n형질화물반도체가덮이도록상기 n 형질화물반도체상에금속보호층(metallic protection layer)을형성한다. 그리고포토레지스트패턴상에형성되어있는금속보호층과포토레지스트패턴을함께제거하여, n형질화물반도체의표면일부를노출시킨다. 그리고 n형질화물반도체의표면이노출된부분을표면처리하여상기 n형질화물반도체표면을거칠게(roughening) 한다.
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