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公开(公告)号:KR100768333B1
公开(公告)日:2007-10-17
申请号:KR1020060076531
申请日:2006-08-14
Applicant: (주)씨앤켐
Abstract: A protective layer material of a plasma display panel and a manufacturing method of the same are provided to enhance discharge efficiency and to reduce a discharge time by using a magnesium oxide including BeO, CaO, and hydrogen. A protective layer material of a plasma display panel includes magnesium oxide as a main component and is formed by performing a vacuum deposition process under hydrogen or moisture atmosphere by using one or more deposition sources selected from a group including BeO and CaO. The BeO is used as the deposition source. The BeO is between 50 ppm and 8,000 ppm when the magnesium oxide is 1 weight percent. In the deposition process, partial pressure of hydrogen or moisture is 1x10^-4Pa to 10^0Pa.
Abstract translation: 提供等离子体显示面板的保护层材料及其制造方法,以通过使用包含BeO,CaO和氢的氧化镁来提高放电效率和减少放电时间。 等离子体显示面板的保护层材料包括氧化镁作为主要成分,并且通过使用一种或多种选自包括BeO和CaO的沉积源在氢气或水分气氛下进行真空沉积来形成。 BeO用作沉积源。 当氧化镁为1重量%时,BeO为50ppm至8,000ppm。 在沉积过程中,氢或水分的分压为1×10 -4 Pa至10 -3 Pa。
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公开(公告)号:KR100805858B1
公开(公告)日:2008-02-21
申请号:KR1020060098603
申请日:2006-10-10
Applicant: (주)씨앤켐
CPC classification number: C04B35/043 , C04B35/03 , C04B2235/3205 , C04B2235/3208 , C04B2235/3217 , C04B2235/3224 , C04B2235/3231 , C04B2235/3256 , C04B2235/3294 , C23C14/081 , H01J9/02 , H01J11/12 , H01J11/40
Abstract: A protection film for PDP and a preparation method of the protection film for PDP are provided to improve electron-emitting characteristics of MgO by extrinsically causing defects in MgO through doping of new elements, and a method for forming a defect level at a suitable position within an MgO band gap is provided. A protection film for AC PDP is formed by a vacuum deposition process using a deposition source comprising magnesium oxide and simultaneously comprising a first doping material consisting of BeO and at least one second doping material selected from the group consisting of Sc2O3, Sb2O3, Er2O3, Mo2O3 and Al2O3. A preparation method of a protection film for AC PDP comprises the steps of: uniformly mixing magnesium hydrate(Mg(OH)2) as a deposition source, BeO as a first doping material or its precursor, and at least one second doping material selected from the group consisting of Sc2O3, Sb2O3, Er2O3, Mo2O3 and Al2O3, or a precursor thereof; pressing the mixture in a mold to prepare the mixture into the form of pellets; calcining the pellets; sintering the calcined pellets to form deposition source pellets for forming a protection film; and subjecting the deposition source pellets for forming a protection film to vacuum deposition to form a protection film.
Abstract translation: 提供一种用于PDP的保护膜和用于PDP的保护膜的制备方法,以通过掺杂新元素引起MgO中的缺陷,从而改善MgO的电子发射特性,以及在适当的位置形成缺陷水平的方法 提供MgO带隙。 用于AC PDP的保护膜通过使用包括氧化镁的沉积源的真空沉积工艺形成,并且同时包括由BeO组成的第一掺杂材料和选自Sc 2 O 3,Sb 2 O 3,Er 2 O 3,Mo 2 O 3的至少一种第二掺杂材料 和Al2O3。 AC PDP的保护膜的制备方法包括以下步骤:将作为沉积源的氢氧化镁(Mg(OH)2),BeO作为第一掺杂材料或其前体均匀混合,以及选自以下的至少一种第二掺杂材料: 由Sc2O3,Sb2O3,Er2O3,Mo2O3和Al2O3组成的组,或其前体; 将混合物压在模具中以将混合物制成颗粒状; 煅烧颗粒; 烧结煅烧颗粒以形成用于形成保护膜的沉积源颗粒; 以及使用于形成保护膜的沉积源颗粒进行真空沉积以形成保护膜。
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