公开(公告)号：KR100768333B1

公开(公告)日：2007-10-17

申请号：KR1020060076531

申请日：2006-08-14

Applicant: (주)씨앤켐

Inventor： 김정석 ,  정석 ,  김유한 ,  표진호 ,  김용석 ,  박경현

IPC: H01J11/40 ,  C23C14/00 ,  H01J9/20

Abstract: A protective layer material of a plasma display panel and a manufacturing method of the same are provided to enhance discharge efficiency and to reduce a discharge time by using a magnesium oxide including BeO, CaO, and hydrogen. A protective layer material of a plasma display panel includes magnesium oxide as a main component and is formed by performing a vacuum deposition process under hydrogen or moisture atmosphere by using one or more deposition sources selected from a group including BeO and CaO. The BeO is used as the deposition source. The BeO is between 50 ppm and 8,000 ppm when the magnesium oxide is 1 weight percent. In the deposition process, partial pressure of hydrogen or moisture is 1x10^-4Pa to 10^0Pa.

Abstract translation: 提供等离子体显示面板的保护层材料及其制造方法，以通过使用包含BeO，CaO和氢的氧化镁来提高放电效率和减少放电时间。 等离子体显示面板的保护层材料包括氧化镁作为主要成分，并且通过使用一种或多种选自包括BeO和CaO的沉积源在氢气或水分气氛下进行真空沉积来形成。 BeO用作沉积源。 当氧化镁为1重量％时，BeO为50ppm至8,000ppm。 在沉积过程中，氢或水分的分压为1×10 -4 Pa至10 -3 Pa。

公开(公告)号：KR100796203B1

公开(公告)日：2008-01-21

申请号：KR1020060059022

申请日：2006-06-29

Applicant: (주)씨앤켐

Inventor： 김정석 ,  표진호 ,  김유한 ,  정석

IPC: H01J11/40

Abstract: 본 발명은 플라즈마 화상표시기(PDP)의 보호막 물질로 사용 중인 다결정 MgO의 특성을 개선할 수 있는 다결정 MgO 증착재를 제공하는 것을 목적으로 한다.
상기 목적을 달성하기 위한 방법은, 난소결성인 MgO에 소결조제로 Flux를 첨가하여 제조하는 것으로, Flux의 함량은 0.1wt% ~ 20wt%이다.
PDP, Protective Layer, MgO, Flux, 보호막

公开(公告)号：KR1020080001034A

公开(公告)日：2008-01-03

申请号：KR1020060059053

申请日：2006-06-29

Applicant: (주)씨앤켐

Inventor： 김정석 ,  표진호 ,  김유한 ,  정석 ,  백종후

IPC: H01J11/40

Abstract: An MgO vapor deposition material and a forming method thereof are provided to increase a light transmittance of a PDP by improving a secondary electron emission coefficient. A polycrystal MgO vapor deposition material for a protective film of a PDP(Plasma Display Panel) contains Gd less than 400ppm. A purity of MgO is greater than 99.9% and a relative density of the MgO is greater than 90%. The concentration of the Gd contained in the polycrystal MgO vapor deposition material is between 100 and 400ppm. Gd2O3 less than 400ppm is added into the MgO and the added result is fired for one to ten hours at a temperature between 1600 and 1700 degrees centigrade.

Abstract translation: 提供MgO蒸镀材料及其形成方法，以通过提高二次电子发射系数来提高PDP的透光率。 用于PDP（等离子体显示面板）的保护膜的多晶MgO气相沉积材料含有小于400ppm的Gd。 MgO的纯度大于99.9％，MgO的相对密度大于90％。 多晶MgO蒸镀材料中所含的Gd的浓度为100〜400ppm。 在MgO中加入少于400ppm的Gd 2 O 3，加入的结果在1600〜1700摄氏度的温度下焙烧1〜10小时。

公开(公告)号：KR100805858B1

公开(公告)日：2008-02-21

申请号：KR1020060098603

申请日：2006-10-10

Applicant: (주)씨앤켐

Inventor： 김정석 ,  정석 ,  김유한 ,  표진호 ,  김용석 ,  박경현

IPC: C23C14/24 ,  H01J11/40 ,  H01J9/20 ,  H01B3/10

CPC classification number: C04B35/043 ,  C04B35/03 ,  C04B2235/3205 ,  C04B2235/3208 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3231 ,  C04B2235/3256 ,  C04B2235/3294 ,  C23C14/081 ,  H01J9/02 ,  H01J11/12 ,  H01J11/40

Abstract: A protection film for PDP and a preparation method of the protection film for PDP are provided to improve electron-emitting characteristics of MgO by extrinsically causing defects in MgO through doping of new elements, and a method for forming a defect level at a suitable position within an MgO band gap is provided. A protection film for AC PDP is formed by a vacuum deposition process using a deposition source comprising magnesium oxide and simultaneously comprising a first doping material consisting of BeO and at least one second doping material selected from the group consisting of Sc2O3, Sb2O3, Er2O3, Mo2O3 and Al2O3. A preparation method of a protection film for AC PDP comprises the steps of: uniformly mixing magnesium hydrate(Mg(OH)2) as a deposition source, BeO as a first doping material or its precursor, and at least one second doping material selected from the group consisting of Sc2O3, Sb2O3, Er2O3, Mo2O3 and Al2O3, or a precursor thereof; pressing the mixture in a mold to prepare the mixture into the form of pellets; calcining the pellets; sintering the calcined pellets to form deposition source pellets for forming a protection film; and subjecting the deposition source pellets for forming a protection film to vacuum deposition to form a protection film.

Abstract translation: 提供一种用于PDP的保护膜和用于PDP的保护膜的制备方法，以通过掺杂新元素引起MgO中的缺陷，从而改善MgO的电子发射特性，以及在适当的位置形成缺陷水平的方法 提供MgO带隙。 用于AC PDP的保护膜通过使用包括氧化镁的沉积源的真空沉积工艺形成，并且同时包括由BeO组成的第一掺杂材料和选自Sc 2 O 3，Sb 2 O 3，Er 2 O 3，Mo 2 O 3的至少一种第二掺杂材料 和Al2O3。 AC PDP的保护膜的制备方法包括以下步骤：将作为沉积源的氢氧化镁（Mg（OH）2），BeO作为第一掺杂材料或其前体均匀混合，以及选自以下的至少一种第二掺杂材料： 由Sc2O3，Sb2O3，Er2O3，Mo2O3和Al2O3组成的组，或其前体; 将混合物压在模具中以将混合物制成颗粒状; 煅烧颗粒; 烧结煅烧颗粒以形成用于形成保护膜的沉积源颗粒; 以及使用于形成保护膜的沉积源颗粒进行真空沉积以形成保护膜。

公开(公告)号：KR1020080001025A

公开(公告)日：2008-01-03

申请号：KR1020060059022

申请日：2006-06-29

Applicant: (주)씨앤켐

Inventor： 김정석 ,  표진호 ,  김유한 ,  정석

IPC: H01J11/40

Abstract: An MgO vapor deposition material and a forming method thereof are provided to improve a crystallizing property of the polycrystal MgO vapor deposition material by increasing a mean crystal size. A polycrystal MgO vapor deposition material for a protective film of a PDP is made of a plastic which contains MgF2 of 0.1 to 20w% and MgO of 80 to 99.9w%. A purity of the MgO is greater than 99.9%. A relative density of the plastic is between 95 and 97%. A mean particle size of the plastic is between 3 and 37um. The MgF2 and MgO are fired for 1 to 10 hours at a temperature between 1600 and 1700 degrees centigrade.

Abstract translation: 提供MgO气相沉积材料及其形成方法，以通过增加平均晶体尺寸来改善多晶MgO气相沉积材料的结晶性能。 用于PDP的保护膜的多晶MgO气相沉积材料由含有0.1〜20w％的MgF 2和80〜99.9w％的MgO的塑料制成。 MgO的纯度大于99.9％。 塑料的相对密度在95和97％之间。 塑料的平均粒径在3和37um之间。 将MgF 2和MgO在1600至1700摄氏度之间的温度下焙烧1至10小时。