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公开(公告)号：KR1020080001034A
公开(公告)日：2008-01-03
申请号：KR1020060059053
申请日：2006-06-29
Applicant: (주)씨앤켐
IPC: H01J11/40
Abstract: An MgO vapor deposition material and a forming method thereof are provided to increase a light transmittance of a PDP by improving a secondary electron emission coefficient. A polycrystal MgO vapor deposition material for a protective film of a PDP(Plasma Display Panel) contains Gd less than 400ppm. A purity of MgO is greater than 99.9% and a relative density of the MgO is greater than 90%. The concentration of the Gd contained in the polycrystal MgO vapor deposition material is between 100 and 400ppm. Gd2O3 less than 400ppm is added into the MgO and the added result is fired for one to ten hours at a temperature between 1600 and 1700 degrees centigrade.
Abstract translation: 提供MgO蒸镀材料及其形成方法，以通过提高二次电子发射系数来提高PDP的透光率。 用于PDP（等离子体显示面板）的保护膜的多晶MgO气相沉积材料含有小于400ppm的Gd。 MgO的纯度大于99.9％，MgO的相对密度大于90％。 多晶MgO蒸镀材料中所含的Gd的浓度为100〜400ppm。 在MgO中加入少于400ppm的Gd 2 O 3，加入的结果在1600〜1700摄氏度的温度下焙烧1〜10小时。
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公开(公告)号：KR101192965B1
公开(公告)日：2012-10-19
申请号：KR1020090076237
申请日：2009-08-18
Abstract: 본 발명은 개선된 특성을 갖는 PDP 보호막용 산화마그네슘 증착재 및 이를 이용한 산화마그네슘 소결체 제조방법에 관한 것으로, 스칸듐(Sc), 가돌리늄(Gd), 지르코늄(Zr) 및 철(Fe) 중에서 선택되는 2가지 이상의 물질 1 ~ 200 ppm이 복합 도펀트(Multi Dopant)로서 산화마그네슘(MgO)에 첨가되어, 복합 도펀트를 포함하는 다결정 MgO 형태로 형성된 소결체를 제조하고 이를 이용하여 PDP용 보호막을 제조함으로써, PDP의 내구성 향상, 수명 특성의 향상 및 제조 공정의 저가화를 실현하고, PDP 방전 특성의 향상을 통한 고휘도 및 고선명도를 구현하여 PDP의 고품질화를 실현할 수 있도록 하는 기술에 관한 것이다.
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公开(公告)号：KR1020110018658A
公开(公告)日：2011-02-24
申请号：KR1020090076237
申请日：2009-08-18
Abstract: PURPOSE: An MgO evaporation source for protecting PDP protecting film and a manufacturing method of MgO sintered using the same are provided to improve the durability and property of PDP by using poly-crystal magnesium oxide as a vapor-deposition material for a PDP protective film. CONSTITUTION: Material more than two kinds of scandium, gadolinium, zirconium and iron is selected and mixed with magnesium oxide. The mixture is calcinated with pellet shaped after molded. The calcined material is sintered in 1600-1700°C. The relative density of the sintering material is 95.5% or greater. The complex dopant is mixed at 1-200 ppm. Calcination is performed in 500-1000°C. Sintering is operated for 1-10 hours.
Abstract translation: 目的：提供用于保护PDP保护膜的MgO蒸发源和使用其的烧结MgO的制造方法，以通过使用聚晶氧化镁作为PDP保护膜的蒸镀材料来提高PDP的耐久性和性能。 规定：选择材料两种以上的钪，钆，锆和铁，并与氧化镁混合。 混合物在模制后用颗粒状煅烧。 煅烧后的材料在1600-1700℃烧结。 烧结材料的相对密度为95.5％以上。 复合掺杂剂以1-200ppm混合。 煅烧在500-1000℃进行。 烧结操作1-10小时。
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