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公开(公告)号：CN102738106A
公开(公告)日：2012-10-17
申请号：CN201210182881.4
申请日：2007-05-22
IPC: H01L23/488 , H01L23/498 , H01L23/31 , H01L23/24
CPC classification number: H01L23/49866 , H01L21/563 , H01L23/24 , H01L23/3128 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/75 , H01L24/81 , H01L2224/0345 , H01L2224/03462 , H01L2224/03464 , H01L2224/0362 , H01L2224/03828 , H01L2224/0401 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05118 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/0516 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05571 , H01L2224/05647 , H01L2224/05655 , H01L2224/1132 , H01L2224/1145 , H01L2224/11462 , H01L2224/1147 , H01L2224/115 , H01L2224/11502 , H01L2224/1152 , H01L2224/11849 , H01L2224/13006 , H01L2224/13022 , H01L2224/13111 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/75702 , H01L2224/8121 , H01L2224/81447 , H01L2224/81455 , H01L2224/81815 , H01L2224/83104 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/09701 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/3512 , H01L2924/3651 , H05K3/244 , H05K3/3436 , H05K3/3463 , H01L2924/00 , H01L2224/05552 , H01L2924/00012
Abstract: 在常规UBM例如Cu、Ni或NiP中，存在的这样问题：在长时间将电子部件保持在高温条件下时导致UBM的阻挡特性被破坏，并且由于在结合界面形成脆性的合金层，导致结合强度降低。焊料连接部分在高温下储存之后长期连接可靠性降低的问题得到了解决。电子部件上提供有：安置在基板或半导体元件上的电极片；和为覆盖所述电极片而安置的阻挡金属层。所述阻挡金属层在与所述电极片接触侧相反的一侧上包含CuNi合金层，所述CuNi合金层含有15至60原子％的Cu和40至85原子％的Ni。
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公开(公告)号：CN102738107B
公开(公告)日：2014-08-27
申请号：CN201210183161.X
申请日：2007-05-22
Applicant: 瑞萨电子株式会社
IPC: H01L23/488 , H01L23/498 , H01L23/31
CPC classification number: H01L23/49866 , H01L21/563 , H01L23/24 , H01L23/3128 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/75 , H01L24/81 , H01L2224/0345 , H01L2224/03462 , H01L2224/03464 , H01L2224/0362 , H01L2224/03828 , H01L2224/0401 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05118 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/0516 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05571 , H01L2224/05647 , H01L2224/05655 , H01L2224/1132 , H01L2224/1145 , H01L2224/11462 , H01L2224/1147 , H01L2224/115 , H01L2224/11502 , H01L2224/1152 , H01L2224/11849 , H01L2224/13006 , H01L2224/13022 , H01L2224/13111 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/75702 , H01L2224/8121 , H01L2224/81447 , H01L2224/81455 , H01L2224/81815 , H01L2224/83104 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/09701 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/3512 , H01L2924/3651 , H05K3/244 , H05K3/3436 , H05K3/3463 , H01L2924/00 , H01L2224/05552 , H01L2924/00012
Abstract: 在常规UBM例如Cu、Ni或NiP中，存在的这样问题：在长时间将电子部件保持在高温条件下时导致UBM的阻挡特性被破坏，并且由于在结合界面形成脆性的合金层，导致结合强度降低。焊料连接部分在高温下储存之后长期连接可靠性降低的问题得到了解决。电子部件上提供有：安置在基板或半导体元件上的电极片；和为覆盖所述电极片而安置的阻挡金属层。所述阻挡金属层在与所述电极片接触侧相反的一侧上包含CuNi合金层，所述CuNi合金层含有15至60原子％的Cu和40至85原子％的Ni。
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公开(公告)号：CN101599477B
公开(公告)日：2012-10-10
申请号：CN200910146024.7
申请日：2009-06-05
Applicant: 瑞萨电子株式会社
IPC: H01L23/52 , H01L23/485 , H01L21/60 , H01L21/768
Abstract: 本发明提供一种半导体装置及制造该半导体装置的方法。在该半导体装置中，贯通孔被形成在基板中，并且位于导电性图案下方。绝缘层位于贯通孔的底表面处。导电性图案位于基板的一个表面侧。位于贯通孔与导电性图案之间的绝缘层中形成开口图案，其中从开口图案的外周到贯通孔的中心轴的距离r3比贯通孔中的距离r1小。通过提供开口图案，在贯通孔的底表面处暴露导电性图案。凸块位于基板的背表面侧，并且与贯通电极一体地形成。
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公开(公告)号：CN1976014B
公开(公告)日：2011-03-23
申请号：CN200610163649.0
申请日：2006-12-01
Applicant: 瑞萨电子株式会社
IPC: H01L23/48 , H01L23/538 , H01L25/065 , H01L21/60 , H01L21/768
CPC classification number: H01L25/0657 , H01L21/76898 , H01L23/3128 , H01L23/481 , H01L23/562 , H01L23/642 , H01L25/50 , H01L2221/68345 , H01L2223/6622 , H01L2224/16145 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2225/06513 , H01L2225/06517 , H01L2225/06524 , H01L2225/06541 , H01L2225/06572 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/10155 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012
Abstract: 一种半导体器件，包括：互连构件，第一半导体芯片，第二半导体芯片，树脂层，无机绝缘层和通孔电极。第一半导体芯片以面向下的方式安装在互连构件上。树脂层覆盖第一半导体芯片的侧表面。无机绝缘层与第一半导体芯片的后表面接触，且直接覆盖该后表面。而且，无机绝缘层在树脂层之上延伸。通孔电极穿过无机绝缘层和第一半导体芯片的半导体衬底。以面向下的方式在无机绝缘层上安装第二半导体芯片，该无机绝缘层覆盖最上层中的第一半导体芯片的背表面。
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Patent Agency Ranking
公开(公告)号：CN101454887B
公开(公告)日：2011-03-23
申请号：CN200780019384.X
申请日：2007-05-22
IPC: H01L21/60 , H01L23/52 , H01L21/3205
CPC classification number: H01L23/49866 , H01L21/563 , H01L23/24 , H01L23/3128 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/75 , H01L24/81 , H01L2224/0345 , H01L2224/03462 , H01L2224/03464 , H01L2224/0362 , H01L2224/03828 , H01L2224/0401 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05118 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/0516 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05571 , H01L2224/05647 , H01L2224/05655 , H01L2224/1132 , H01L2224/1145 , H01L2224/11462 , H01L2224/1147 , H01L2224/115 , H01L2224/11502 , H01L2224/1152 , H01L2224/11849 , H01L2224/13006 , H01L2224/13022 , H01L2224/13111 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/75702 , H01L2224/8121 , H01L2224/81447 , H01L2224/81455 , H01L2224/81815 , H01L2224/83104 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/09701 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/3512 , H01L2924/3651 , H05K3/244 , H05K3/3436 , H05K3/3463 , H01L2924/00 , H01L2224/05552 , H01L2924/00012
Abstract: 在常规UBM例如Cu、Ni或NiP中，存在的这样问题：在长时间将电子部件保持在高温条件下时导致UBM的阻挡特性被破坏，并且由于在结合界面形成脆性的合金层，导致结合强度降低。焊料连接部分在高温下储存之后长期连接可靠性降低的问题得到了解决。电子部件上提供有：安置在基板或半导体元件上的电极片；和为覆盖所述电极片而安置的阻挡金属层。所述阻挡金属层在与所述电极片接触侧相反的一侧上包含CuNi合金层，所述CuNi合金层含有15至60原子％的Cu和40至85原子％的Ni。
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公开(公告)号：CN102157458A
公开(公告)日：2011-08-17
申请号：CN201110042145.4
申请日：2007-05-22
IPC: H01L23/00 , H01L23/498 , H01L23/31
CPC classification number: H01L23/49866 , H01L21/563 , H01L23/24 , H01L23/3128 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/75 , H01L24/81 , H01L2224/0345 , H01L2224/03462 , H01L2224/03464 , H01L2224/0362 , H01L2224/03828 , H01L2224/0401 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05118 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/0516 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05571 , H01L2224/05647 , H01L2224/05655 , H01L2224/1132 , H01L2224/1145 , H01L2224/11462 , H01L2224/1147 , H01L2224/115 , H01L2224/11502 , H01L2224/1152 , H01L2224/11849 , H01L2224/13006 , H01L2224/13022 , H01L2224/13111 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/75702 , H01L2224/8121 , H01L2224/81447 , H01L2224/81455 , H01L2224/81815 , H01L2224/83104 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/09701 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/3512 , H01L2924/3651 , H05K3/244 , H05K3/3436 , H05K3/3463 , H01L2924/00 , H01L2224/05552 , H01L2924/00012
Abstract: 在常规UBM例如Cu、Ni或NiP中，存在的这样问题：在长时间将电子部件保持在高温条件下时导致UBM的阻挡特性被破坏，并且由于在结合界面形成脆性的合金层，导致结合强度降低。焊料连接部分在高温下储存之后长期连接可靠性降低的问题得到了解决。电子部件上提供有：安置在基板或半导体元件上的电极片；和为覆盖所述电极片而安置的阻挡金属层。所述阻挡金属层在与所述电极片接触侧相反的一侧上包含CuNi合金层，所述CuNi合金层含有15至60原子％的Cu和40至85原子％的Ni。
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公开(公告)号：CN102738107A
公开(公告)日：2012-10-17
申请号：CN201210183161.X
申请日：2007-05-22
IPC: H01L23/488 , H01L23/498 , H01L23/31
CPC classification number: H01L23/49866 , H01L21/563 , H01L23/24 , H01L23/3128 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/75 , H01L24/81 , H01L2224/0345 , H01L2224/03462 , H01L2224/03464 , H01L2224/0362 , H01L2224/03828 , H01L2224/0401 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05118 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/0516 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05571 , H01L2224/05647 , H01L2224/05655 , H01L2224/1132 , H01L2224/1145 , H01L2224/11462 , H01L2224/1147 , H01L2224/115 , H01L2224/11502 , H01L2224/1152 , H01L2224/11849 , H01L2224/13006 , H01L2224/13022 , H01L2224/13111 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/75702 , H01L2224/8121 , H01L2224/81447 , H01L2224/81455 , H01L2224/81815 , H01L2224/83104 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/09701 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/3512 , H01L2924/3651 , H05K3/244 , H05K3/3436 , H05K3/3463 , H01L2924/00 , H01L2224/05552 , H01L2924/00012
Abstract: 在常规UBM例如Cu、Ni或NiP中，存在的这样问题：在长时间将电子部件保持在高温条件下时导致UBM的阻挡特性被破坏，并且由于在结合界面形成脆性的合金层，导致结合强度降低。焊料连接部分在高温下储存之后长期连接可靠性降低的问题得到了解决。电子部件上提供有：安置在基板或半导体元件上的电极片；和为覆盖所述电极片而安置的阻挡金属层。所述阻挡金属层在与所述电极片接触侧相反的一侧上包含CuNi合金层，所述CuNi合金层含有15至60原子％的Cu和40至85原子％的Ni。
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公开(公告)号：CN102157458B
公开(公告)日：2012-10-17
申请号：CN201110042145.4
申请日：2007-05-22
IPC: H01L23/00 , H01L23/498 , H01L23/31
CPC classification number: H01L23/49866 , H01L21/563 , H01L23/24 , H01L23/3128 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/75 , H01L24/81 , H01L2224/0345 , H01L2224/03462 , H01L2224/03464 , H01L2224/0362 , H01L2224/03828 , H01L2224/0401 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05118 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/0516 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05571 , H01L2224/05647 , H01L2224/05655 , H01L2224/1132 , H01L2224/1145 , H01L2224/11462 , H01L2224/1147 , H01L2224/115 , H01L2224/11502 , H01L2224/1152 , H01L2224/11849 , H01L2224/13006 , H01L2224/13022 , H01L2224/13111 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/75702 , H01L2224/8121 , H01L2224/81447 , H01L2224/81455 , H01L2224/81815 , H01L2224/83104 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/09701 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/3512 , H01L2924/3651 , H05K3/244 , H05K3/3436 , H05K3/3463 , H01L2924/00 , H01L2224/05552 , H01L2924/00012
Abstract: 在常规UBM例如Cu、Ni或NiP中，存在的这样问题：在长时间将电子部件保持在高温条件下时导致UBM的阻挡特性被破坏，并且由于在结合界面形成脆性的合金层，导致结合强度降低。焊料连接部分在高温下储存之后长期连接可靠性降低的问题得到了解决。电子部件上提供有：安置在基板或半导体元件上的电极片；和为覆盖所述电极片而安置的阻挡金属层。所述阻挡金属层在与所述电极片接触侧相反的一侧上包含CuNi合金层，所述CuNi合金层含有15至60原子％的Cu和40至85原子％的Ni。
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公开(公告)号：CN101986422A
公开(公告)日：2011-03-16
申请号：CN201010218293.2
申请日：2010-06-28
Applicant: 瑞萨电子株式会社
IPC: H01L21/3205
CPC classification number: C23C18/1651 , C23C18/1632 , C23C18/32 , C23C18/54 , H01L21/288 , H01L21/76898 , H01L24/03 , H01L24/05 , H01L24/10 , H01L24/13 , H01L24/48 , H01L2224/0401 , H01L2224/04042 , H01L2224/05147 , H01L2224/05155 , H01L2224/05164 , H01L2224/05556 , H01L2224/05644 , H01L2224/13 , H01L2224/13099 , H01L2224/48463 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/3025 , H01L2224/45099 , H01L2224/05599 , H01L2924/00
Abstract: 一种用于制造半导体器件的方法及设备。所述方法包括：使用化学镀方法在半导体衬底上形成多个金属膜的层叠结构。形成金属膜包括：使用第一镀槽进行包括还原反应的化学镀工艺；和使用第二镀槽进行仅通过置换反应的化学镀工艺。包括使用第一镀槽进行的还原反应的化学镀工艺是在遮光环境中进行，并且使用第二镀槽仅通过置换反应进行的化学镀工艺是在非遮光环境中进行的。
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