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    반도체 레이저장치와 그 제조방법
    4.
    发明授权
    반도체 레이저장치와 그 제조방법 失效
    半导体激光装置及其制造方法

    公开(公告)号：KR1019900003844B1

    公开(公告)日：1990-06-02

    申请号：KR1019870002016

    申请日：1987-03-06

    Applicant: 가부시끼가이샤 도시바

    Inventor： 후루야마히데토 ,  구로베아츠시

    IPC: H01S5/06

    CPC classification number: B82Y20/00 ,  H01L33/0062 ,  H01S5/2059 ,  H01S5/34

    Abstract: Embedded semiconductor laser is made with a conductive cladding layer, a quantum well active layer contg. a conduction type or p-n junction and a second conduction cladding layer. A high concn. impurity doped layer is formed on a buffer layer on the quantum well active layer by crystal growth. The doped layer and stripe region removed selectively and crystal growth of second cladding layer carried out on the doped layer and striped region. Impurity is different from the doped layer to the quantum well active layer by heat treatment at a temp. higher than that used for the crystal growth.

    Abstract translation: 嵌入式半导体激光器由导电覆层，量子阱活性层限制制成。 导电型或p-n结和第二导电覆层。 高浓度 杂质掺杂层通过晶体生长形成在量子阱活性层上的缓冲层上。 选择性地去除掺杂层和条纹区域，并且在掺杂层和条纹区域上进行第二覆层的晶体生长。 通过在温度下的热处理，杂质不同于掺杂层到量子阱活性层。 高于用于晶体生长的。

    광전송선로의 홀더 및 다중코어 광도파관의 홀더
    9.
    发明公开
    광전송선로의 홀더 및 다중코어 광도파관의 홀더 失效
    光传输线和多核心光波导的持有者

    公开(公告)号：KR1020050067060A

    公开(公告)日：2005-06-30

    申请号：KR1020040111922

    申请日：2004-12-24

    Applicant: 가부시끼가이샤 도시바

    Inventor： 하마사키히로시 ,  후루야마히데토

    IPC: G02B6/43 ,  G02B6/42

    CPC classification number: G02B6/4249 ,  G02B6/3644 ,  G02B6/43

    Abstract: A holder of optical transmission lines encompasses an insulating base body defined by a mounting face to mount an optical device chip, an opposing face opposing to the mounting face and side faces which connect between the mounting face and the opposing face, one of side faces is assigned as an interconnection face, and provided with through-holes penetrating between the mounting face and the opposing face so as to hold optical transmission lines, the through-holes define openings on the mounting face; electric interconnections extending from respective vicinities of the opening on the mounting face on to the interconnection face; and heat conduction passages assigned alternately with the electric interconnections, extending from the mounting face on to the interconnection face, each of the heat conduction passages is longer than the electric interconnections on the interconnection face.

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