公开(公告)号：KR1020140089037A

公开(公告)日：2014-07-14

申请号：KR1020130000092

申请日：2013-01-02

Applicant: 고려대학교 산학협력단

Inventor： 변동진 ,  박기선 ,  이도한 ,  이제행 ,  김대식 ,  조성찬

IPC: C23C16/44 ,  C23C28/00

Abstract: Provided is a method of manufacturing a zinc oxide-based thin film structure which includes the steps of forming a first zinc oxide-based thin film on a substrate at first temperature in a first chemical vapor deposition process; and forming a second zinc oxide-based thin film on the first zinc oxide-based thin film at second temperature which is lower than the first temperature in a second chemical vapor deposition process, wherein a difference between the second temperature and the first temperature is set to 100°C or less. Therefore, it is possible to manufacture a zinc oxide-based thin film structure having excellent crystalline quality at a relatively low temperature.

Abstract translation: 本发明提供一种氧化锌系薄膜结构体的制造方法，其特征在于，在第一化学气相沉积工艺中，在第一温度下，在基板上形成第一氧化锌系薄膜的工序; 以及在第二化学气相沉积工艺中在第二温度低于第一温度的第一氧化锌基薄膜上形成第二氧化锌基薄膜，其中第二温度与第一温度之间的差设定 至100℃以下。 因此，可以在相对低的温度下制造具有优异结晶质量的氧化锌基薄膜结构。