公开(公告)号：KR101263133B1

公开(公告)日：2013-05-15

申请号：KR1020120020012

申请日：2012-02-28

Applicant: 고려대학교 산학협력단

Inventor： 변동진 ,  장삼석 ,  박기선 ,  김아영 ,  이도한

IPC: H01L33/28

CPC classification number: H01L33/32 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/08

Abstract: PURPOSE: A light emitting diode and a method for manufacturing the same are provided to form an n-type semiconductor for emitting green light and absorbing blue light on an active layer for generating blue light, and secure a high efficiency green light emitting device. CONSTITUTION: A p-type compound semiconductor layer(130) is formed in the upper part of a substrate(110). An active layer(150) is formed in the upper part of the p-type compound semiconductor layer. An active layer emits blue wavelength light. An n-type oxide semiconductor layer(170) made of zinc oxide is formed in the upper part of the active layer. The n-type oxide semiconductor layer absorbs the green wavelength light to emit the blue wavelength light.

Abstract translation: 目的：提供一种发光二极管及其制造方法，以形成用于发射绿光并在有源层上吸收蓝光以产生蓝光的n型半导体，并且确保高效绿色发光器件。 构成：在基板（110）的上部形成有p型化合物半导体层（130）。 在p型化合物半导体层的上部形成有源层（150）。 有源层发出蓝色波长的光。 在有源层的上部形成由氧化锌构成的n型氧化物半导体层（170）。 n型氧化物半导体层吸收绿色波长的光以发射蓝色波长的光。

公开(公告)号：KR1020140089037A

公开(公告)日：2014-07-14

申请号：KR1020130000092

申请日：2013-01-02

Applicant: 고려대학교 산학협력단

Inventor： 변동진 ,  박기선 ,  이도한 ,  이제행 ,  김대식 ,  조성찬

IPC: C23C16/44 ,  C23C28/00

Abstract: Provided is a method of manufacturing a zinc oxide-based thin film structure which includes the steps of forming a first zinc oxide-based thin film on a substrate at first temperature in a first chemical vapor deposition process; and forming a second zinc oxide-based thin film on the first zinc oxide-based thin film at second temperature which is lower than the first temperature in a second chemical vapor deposition process, wherein a difference between the second temperature and the first temperature is set to 100°C or less. Therefore, it is possible to manufacture a zinc oxide-based thin film structure having excellent crystalline quality at a relatively low temperature.

Abstract translation: 本发明提供一种氧化锌系薄膜结构体的制造方法，其特征在于，在第一化学气相沉积工艺中，在第一温度下，在基板上形成第一氧化锌系薄膜的工序; 以及在第二化学气相沉积工艺中在第二温度低于第一温度的第一氧化锌基薄膜上形成第二氧化锌基薄膜，其中第二温度与第一温度之间的差设定 至100℃以下。 因此，可以在相对低的温度下制造具有优异结晶质量的氧化锌基薄膜结构。