n형 전계효과 트랜지스터의 제조방법
    4.
    发明公开
    n형 전계효과 트랜지스터의 제조방법 有权
    N型场效应晶体管的制造方法

    公开(公告)号:KR1020100127070A

    公开(公告)日:2010-12-03

    申请号:KR1020090045580

    申请日:2009-05-25

    CPC classification number: H01L51/0008 H01L51/0012

    Abstract: PURPOSE: A method for manufacturing an N type electric field effect transistor is provided to improve electron mobility by thermally processing an organic layer which is deposited by using specific compounds at a specific temperature. CONSTITUTION: A gate electrode(100) is formed on the lower side of an n type silicon substrate(110). A dielectric layer(120) is formed on the upper side of a silicon substrate. The substrate is inserted into a cluster beam deposition chamber. A cluster is formed by passing the vaporized compound through a nozzle. An organic layer(130) is formed by depositing the cluster on the upper side of the dielectric layer. A source electrode(141) and a drain electrode(140) are formed on the upper side of the organic layer.

    Abstract translation: 目的:提供一种用于制造N型电场效应晶体管的方法,以通过热处理在特定温度下使用特定化合物沉积的有机层来改善电子迁移率。 构成:在n型硅衬底(110)的下侧形成栅电极(100)。 介电层(120)形成在硅衬底的上侧。 将基板插入聚束束沉积室。 通过使蒸发的化合物通过喷嘴形成簇。 通过在电介质层的上侧沉积簇而形成有机层(130)。 源极电极(141)和漏电极(140)形成在有机层的上侧。

    유기박막 트랜지스터의 제조방법 및 그 방법에 의하여제조된 유기박막 트랜지스터
    5.
    发明公开
    유기박막 트랜지스터의 제조방법 및 그 방법에 의하여제조된 유기박막 트랜지스터 失效
    制造有机薄膜晶体管的方法和由该方法制造的薄膜晶体管

    公开(公告)号:KR1020080077512A

    公开(公告)日:2008-08-25

    申请号:KR1020070017147

    申请日:2007-02-20

    CPC classification number: H01L51/0002 H01L51/0012 H01L51/0516 H01L51/0529

    Abstract: A method for manufacturing an organic thin film transistor is provided to improve crystallization of an organic thin film by using cluster beam deposition and deposit uniformly organic compound on a surface of a gate insulating layer by using surfactant. A method for manufacturing an organic thin film transistor comprises the steps of: forming a SAM(Self- Assembled Mono layers) by coating a surfactant on a surface of a flat dielectric layer; arranging oligothiophene derivative compound in a crucible(211) with a nozzle(212); applying a voltage of 2 to 15V to the crucible to vaporize the oligothiophene derivative compound; passing the vapor of the oligothiophene derivative compound to the nozzle to form cluster; depositing the vapor of the oligothiophene derivative compound on the dielectric layer at a room temperature of 20 to 30°C to form an organic thin film(216); and forming a source electrode and a drain electrode on the organic thin film.

    Abstract translation: 提供一种用于制造有机薄膜晶体管的方法,以通过使用聚簇束沉积来改善有机薄膜的结晶,并通过使用表面活性剂将均匀的有机化合物沉积在栅极绝缘层的表面上。 一种制造有机薄膜晶体管的方法包括以下步骤:通过在平坦介电层的表面上涂覆表面活性剂来形成SAM(自组装单层); 在具有喷嘴(212)的坩埚(211)中排列低聚噻吩衍生物; 向坩埚施加2〜15V的电压,使低聚噻吩衍生物气化。 将低聚噻吩衍生物的蒸气通入喷嘴形成簇; 在20〜30℃的室温下将低聚噻吩衍生物的蒸气沉积在电介质层上,形成有机薄膜(216)。 并在有机薄膜上形成源电极和漏电极。

    유기발광 트랜지스터의 제조방법
    6.
    发明公开
    유기발광 트랜지스터의 제조방법 有权
    有机发光场效应晶体管的制造方法

    公开(公告)号:KR1020120095658A

    公开(公告)日:2012-08-29

    申请号:KR1020110015109

    申请日:2011-02-21

    CPC classification number: H01L51/5296 H01L51/0008 H01L51/0036 H01L51/0053

    Abstract: PURPOSE: A method for manufacturing an organic light emitting transistor is provided to improve a field effect mobility in air by depositing an electron transport layer and a hole transport layer using specific compounds. CONSTITUTION: A dielectric layer(202) is formed on the upper side of a substrate with a gate electrode. The substrate is inserted into a cluster beam deposition chamber. An electron transport layer(203) is deposited on the upper side of the substrate by evaporating N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide compound and supplying the evaporated compound to the cluster beam deposition chamber. A hole transport layer(204) is deposited on the upper side of the electronic transport layer by evaporating α,ω-dihexylsexithiophene and supplying the evaporated compound to the cluster beam deposition chamber. A source electrode(205) and a drain electrode(206) are formed on the upper side of the hole transport layer.

    Abstract translation: 目的:提供一种用于制造有机发光晶体管的方法,以通过使用特定化合物沉积电子传输层和空穴传输层来改善空气中的场效应迁移率。 构成:在具有栅电极的基板的上侧形成介电层(202)。 将基板插入聚束束沉积室。 通过蒸发N,N'-二十三烷基三亚甲基-3,4,9,10-四羧酸二酰亚胺化合物并将蒸发的化合物供应到簇束沉积室,在基板的上侧沉积电子传输层(203)。 通过蒸发α,ω-二己基硫氧化物并将蒸发的化合物供应到簇束沉积室,在电子传输层的上侧沉积空穴传输层(204)。 源电极(205)和漏电极(206)形成在空穴传输层的上侧。

    유기 인버터 회로의 제조방법
    7.
    发明公开
    유기 인버터 회로의 제조방법 无效
    有机逆变器电路的制造方法

    公开(公告)号:KR1020110085834A

    公开(公告)日:2011-07-27

    申请号:KR1020100060155

    申请日:2010-06-24

    Inventor: 최종호

    CPC classification number: H01L51/0562 H01L51/0008 H01L51/0053 H01L51/0055

    Abstract: PURPOSE: A method for manufacturing an organic inverter circuit is provided to deposit an n-type organic semiconductor material and a p-type organic compound as a double layer respectively, thereby obtaining superior electric field mobility in the air. CONSTITUTION: A substrate(200) is inserted into a cluster beam deposition chamber. An electron transport layer(202) is formed on the substrate. A hole transport layer(203) is made of a pentacene compound and is formed on the electron transport layer. A gate electrode(201) is placed in the lower part of the substrate. A source electrode(204) and a drain electrode(205) are laminated on the hole transport layer.

    Abstract translation: 目的:提供一种用于制造有机逆变器电路的方法,以分别沉积n型有机半导体材料和p型有机化合物作为双层,从而在空气中获得优异的电场迁移率。 构成:将衬底(200)插入聚束束沉积室。 在基板上形成电子传输层(202)。 空穴传输层(203)由并五苯化合物制成并形成在电子传输层上。 栅电极(201)被放置在基板的下部。 源电极(204)和漏电极(205)层叠在空穴传输层上。

    유기 발광 표시 패널 및 그 제조방법
    8.
    发明授权
    유기 발광 표시 패널 및 그 제조방법 失效
    有机发光显示面板及其制造方法

    公开(公告)号:KR100848150B1

    公开(公告)日:2008-07-28

    申请号:KR1020070019269

    申请日:2007-02-26

    Abstract: 본 발명은 유기 발광 표시 패널 및 그 제조방법에 관한 것으로서, 더욱 구체적으로는, 기판 상에 형성된 양극; 상기 양극 상부에 형성된 유기막; 및 상기 유기막의 상부에 형성된 음극을 포함하는 유기 발광 표시 패널에 있어서, 상기 유기막은 하부로부터 순차적으로 적층된 홀 수송층, 발광층 및 전자 수송층을 포함하며, 상기 홀수송층은 폴리아로마틱(Polyaromatic) 탄화수소분자를 포함하고, 상기 홀수송층 및 상기 전자 수송층의 적층은 클러스터 빔 증착법에 의해서 수행되는 것을 특징으로 하는 유기 발광 표시 패널 및 그 제조방법에 관한 것이다.
    본 발명에 따르면 종래기술의 문제점을 극복하여 플렉서블한 기판을 사용하여 유기발광표시패널을 제작할 수 있으며, 표면의 형태, 결정도 및 표면 입자들의 조밀도가 우수한 유기발광표시패널을 제조할 수 있다.
    클러스터 빔 증착법, 폴리아로마틱 탄화수소분자

    Abstract translation: 本发明涉及一种有机发光显示面板及其制造的方法,更具体地,在基板上形成的正电极; 在阳极上形成的有机膜; 和在光的有机发光显示面板,包括以下顺序的空穴传输层,发光层和从所述有机膜是低级层叠电子输送层,空穴输送层是包括形成在所述有机层上的阴极聚芳族(多环芳烃)烃分子 并且,空穴传输层和电子传输层的层叠通过簇束蒸镀法进行,其制造方法如下。

    유기박막 트랜지스터의 제조방법 및 그 방법에 의하여제조된 유기박막 트랜지스터
    9.
    发明公开
    유기박막 트랜지스터의 제조방법 및 그 방법에 의하여제조된 유기박막 트랜지스터 失效
    制造有机薄膜晶体管的方法和由该方法制造的薄膜晶体管

    公开(公告)号:KR1020070088355A

    公开(公告)日:2007-08-29

    申请号:KR1020070017149

    申请日:2007-02-20

    CPC classification number: H01L51/0002 H01L51/0012 H01L51/0516 H01L51/0529

    Abstract: A method for manufacturing an organic TFT and the TFT manufactured thereby are provided to enhance the crystallinity of an organic thin film by using a cluster beam deposition and to improve the uniformity of organic thin film by using a surfactant. A surfactant is coated on a flat silicon substrate(110) to form a self-assembled monolayer. An aromatic hydrocarbon compound is arranged in a crucible while the silicon substrate is prepared as a target, wherein the crucible has a nozzle with a diameter range of 0.5 to 1.5 mm. The aromatic hydrocarbon compound is vaporized by applying a predetermined voltage of 2 to 15 V to the crucible. A cluster is formed by passing the vapor of the aromatic hydrocarbon compound through the nozzle of the crucible. An organic film is formed by depositing the vapor on the silicon substrate in the room temperature range of 20 to 30 °C. A source electrode(141) and a drain electrode(140) are formed on the organic film.

    Abstract translation: 提供一种用于制造有机TFT的方法和由此制造的TFT,以通过使用簇束沉积来提高有机薄膜的结晶度,并通过使用表面活性剂来提高有机薄膜的均匀性。 将表面活性剂涂覆在平坦硅衬底(110)上以形成自组装单层。 在制备硅基板作为目标的同时,在坩埚中配置芳族烃化合物,其中坩埚具有直径范围为0.5〜1.5mm的喷嘴。 通过向坩埚施加2至15V的预定电压来使芳烃化合物汽化。 通过使芳族烃化合物的蒸气通过坩埚的喷嘴而形成簇。 通过在20〜30℃的室温范围内在硅基板上沉积蒸气来形成有机膜。 源极电极(141)和漏电极(140)形成在有机膜上。

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