Abstract:
PURPOSE: A method for manufacturing an N type electric field effect transistor is provided to improve electron mobility by thermally processing an organic layer which is deposited by using specific compounds at a specific temperature. CONSTITUTION: A gate electrode(100) is formed on the lower side of an n type silicon substrate(110). A dielectric layer(120) is formed on the upper side of a silicon substrate. The substrate is inserted into a cluster beam deposition chamber. A cluster is formed by passing the vaporized compound through a nozzle. An organic layer(130) is formed by depositing the cluster on the upper side of the dielectric layer. A source electrode(141) and a drain electrode(140) are formed on the upper side of the organic layer.
Abstract:
A method for manufacturing an organic thin film transistor is provided to improve crystallization of an organic thin film by using cluster beam deposition and deposit uniformly organic compound on a surface of a gate insulating layer by using surfactant. A method for manufacturing an organic thin film transistor comprises the steps of: forming a SAM(Self- Assembled Mono layers) by coating a surfactant on a surface of a flat dielectric layer; arranging oligothiophene derivative compound in a crucible(211) with a nozzle(212); applying a voltage of 2 to 15V to the crucible to vaporize the oligothiophene derivative compound; passing the vapor of the oligothiophene derivative compound to the nozzle to form cluster; depositing the vapor of the oligothiophene derivative compound on the dielectric layer at a room temperature of 20 to 30°C to form an organic thin film(216); and forming a source electrode and a drain electrode on the organic thin film.
Abstract:
PURPOSE: A method for manufacturing an organic light emitting transistor is provided to improve a field effect mobility in air by depositing an electron transport layer and a hole transport layer using specific compounds. CONSTITUTION: A dielectric layer(202) is formed on the upper side of a substrate with a gate electrode. The substrate is inserted into a cluster beam deposition chamber. An electron transport layer(203) is deposited on the upper side of the substrate by evaporating N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide compound and supplying the evaporated compound to the cluster beam deposition chamber. A hole transport layer(204) is deposited on the upper side of the electronic transport layer by evaporating α,ω-dihexylsexithiophene and supplying the evaporated compound to the cluster beam deposition chamber. A source electrode(205) and a drain electrode(206) are formed on the upper side of the hole transport layer.
Abstract:
PURPOSE: A method for manufacturing an organic inverter circuit is provided to deposit an n-type organic semiconductor material and a p-type organic compound as a double layer respectively, thereby obtaining superior electric field mobility in the air. CONSTITUTION: A substrate(200) is inserted into a cluster beam deposition chamber. An electron transport layer(202) is formed on the substrate. A hole transport layer(203) is made of a pentacene compound and is formed on the electron transport layer. A gate electrode(201) is placed in the lower part of the substrate. A source electrode(204) and a drain electrode(205) are laminated on the hole transport layer.
Abstract:
본 발명은 유기 발광 표시 패널 및 그 제조방법에 관한 것으로서, 더욱 구체적으로는, 기판 상에 형성된 양극; 상기 양극 상부에 형성된 유기막; 및 상기 유기막의 상부에 형성된 음극을 포함하는 유기 발광 표시 패널에 있어서, 상기 유기막은 하부로부터 순차적으로 적층된 홀 수송층, 발광층 및 전자 수송층을 포함하며, 상기 홀수송층은 폴리아로마틱(Polyaromatic) 탄화수소분자를 포함하고, 상기 홀수송층 및 상기 전자 수송층의 적층은 클러스터 빔 증착법에 의해서 수행되는 것을 특징으로 하는 유기 발광 표시 패널 및 그 제조방법에 관한 것이다. 본 발명에 따르면 종래기술의 문제점을 극복하여 플렉서블한 기판을 사용하여 유기발광표시패널을 제작할 수 있으며, 표면의 형태, 결정도 및 표면 입자들의 조밀도가 우수한 유기발광표시패널을 제조할 수 있다. 클러스터 빔 증착법, 폴리아로마틱 탄화수소분자
Abstract:
A method for manufacturing an organic TFT and the TFT manufactured thereby are provided to enhance the crystallinity of an organic thin film by using a cluster beam deposition and to improve the uniformity of organic thin film by using a surfactant. A surfactant is coated on a flat silicon substrate(110) to form a self-assembled monolayer. An aromatic hydrocarbon compound is arranged in a crucible while the silicon substrate is prepared as a target, wherein the crucible has a nozzle with a diameter range of 0.5 to 1.5 mm. The aromatic hydrocarbon compound is vaporized by applying a predetermined voltage of 2 to 15 V to the crucible. A cluster is formed by passing the vapor of the aromatic hydrocarbon compound through the nozzle of the crucible. An organic film is formed by depositing the vapor on the silicon substrate in the room temperature range of 20 to 30 °C. A source electrode(141) and a drain electrode(140) are formed on the organic film.