양자점이 첨가된 나노선 구조의 질화갈륨 발광다이오드 및 이의 제조 방법
    1.
    发明公开
    양자점이 첨가된 나노선 구조의 질화갈륨 발광다이오드 및 이의 제조 방법 无效
    使用包含量子的纳米线结构的GAN LED及其制备方法

    公开(公告)号:KR1020140086591A

    公开(公告)日:2014-07-08

    申请号:KR1020120157275

    申请日:2012-12-28

    CPC classification number: H01L33/06 H01L21/02603 H01L33/12 H01L33/22 H01L33/42

    Abstract: The present invention relates to a gallium nitride light emitting diode including; a substrate; an absorption layer formed on one surface of the substrate; an N type gallium nitride semiconductor layer formed at an upper portion of the absorption layer; a nano wire which has grown upon a surface of the N type gallium nitride semiconductor layer; a nano wire shell layer coated on the N type gallium nitride semiconductor layer; a P type gallium nitride semiconductor layer formed on the N type gallium nitride semiconductor layer coated with the nano wire shell layer; and a transparent electrode formed on the P type gallium nitride semiconductor layer, wherein quantum dots having a core shell structure are added to surfaces of the N type gallium nitride semiconductor layer and the nano wire. The gallium nitride light emitting diode having a nano wire structure to which quantum dots are added according to to the present invention has surface convexo-concaves due to the nano wire having grown on the N type semiconductor layer to significantly increase a surface of a border layer where light is generated, reinforces light as quantum dots having a core shell structure generates a fluorescence resonance energy transfer phenomenon, and remarkably improves efficiency of light by forming a muntilayered quantum wall structure.

    Abstract translation: 本发明涉及一种氮化镓发光二极管,包括: 底物; 形成在所述基板的一个表面上的吸收层; 形成在吸收层的上部的N型氮化镓半导体层; 已经在N型氮化镓半导体层的表面上生长的纳米线; 涂覆在N型氮化镓半导体层上的纳米线壳层; 形成在涂覆有纳米线壳层的N型氮化镓半导体层上的P型氮化镓半导体层; 以及形成在P型氮化镓半导体层上的透明电极,其中具有核壳结构的量子点添加到N型氮化镓半导体层和纳米线的表面。 根据本发明,添加有量子点的具有纳米线结构的氮化镓发光二极管由于纳米线在N型半导体层上生长而显现出凸面凹凸,从而显着增加了界面层的表面 当产生光时,加强光,因为具有核壳结构的量子点产生荧光共振能量转移现象,并通过形成均匀的量子壁结构显着提高光的效率。

    가변 칼라 필터 필름 및 변형률 측정 장치

    公开(公告)号:KR102250527B1

    公开(公告)日:2021-05-10

    申请号:KR1020160167032

    申请日:2016-12-08

    Abstract: 본발명의가변칼라필터및 변형률측정장치를제공한다. 이가변칼라필터는광에대하여투과성을가지고제1 굴절률을가지고신축성을가지는투명신축필름; 및외부로돌출되지않도록상기투명신축필름내부에완전히매몰되고비신축성을가지고상기제1 굴절률보다높은제2 굴절률을가지는주기패턴을포함한다.

    가변 칼라 필터 필름 및 변형률 측정 장치
    3.
    发明公开
    가변 칼라 필터 필름 및 변형률 측정 장치 审中-实审
    可变色膜和应变测量装置

    公开(公告)号:KR1020170091505A

    公开(公告)日:2017-08-09

    申请号:KR1020160167032

    申请日:2016-12-08

    Abstract: 본발명의가변칼라필터및 변형률측정장치를제공한다. 이가변칼라필터는광에대하여투과성을가지고제1 굴절률을가지고신축성을가지는투명신축필름; 및외부로돌출되지않도록상기투명신축필름내부에완전히매몰되고비신축성을가지고상기제1 굴절률보다높은제2 굴절률을가지는주기패턴을포함한다.

    Abstract translation: 提供了本发明的可变滤色器和应变测量装置。 双向彩色滤光片是具有透光性且具有第一折射率且可拉伸的透明伸缩性膜, 并且,周期性图案完全掩埋在透明伸缩性膜中,不向外侧突出,具有非伸缩性,且具有比第一折射率高的第二折射率。

    가변 칼라 필터 필름 및 변형률 측정 장치

    公开(公告)号:KR101733343B1

    公开(公告)日:2017-05-08

    申请号:KR1020160012177

    申请日:2016-02-01

    Abstract: 본발명의가변칼라필터및 변형률측정장치를제공한다. 이가변칼라필터는광에대하여투과성을가지고제1 굴절률을가지고신축성을가지는투명신축필름; 및외부로돌출되지않도록상기투명신축필름내부에완전히매몰되고비신축성을가지고상기제1 굴절률보다높은제2 굴절률을가지는주기패턴을포함한다.

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