公开(公告)号：KR1020140086591A

公开(公告)日：2014-07-08

申请号：KR1020120157275

申请日：2012-12-28

Applicant: 고려대학교 산학협력단

Inventor： 성윤모 ,  허주혁 ,  이우진 ,  임형섭 ,  김동협 ,  홍진욱

IPC: H01L33/32 ,  H01L33/04 ,  H01L33/12 ,  B82B1/00

CPC classification number: H01L33/06 ,  H01L21/02603 ,  H01L33/12 ,  H01L33/22 ,  H01L33/42

Abstract: The present invention relates to a gallium nitride light emitting diode including; a substrate; an absorption layer formed on one surface of the substrate; an N type gallium nitride semiconductor layer formed at an upper portion of the absorption layer; a nano wire which has grown upon a surface of the N type gallium nitride semiconductor layer; a nano wire shell layer coated on the N type gallium nitride semiconductor layer; a P type gallium nitride semiconductor layer formed on the N type gallium nitride semiconductor layer coated with the nano wire shell layer; and a transparent electrode formed on the P type gallium nitride semiconductor layer, wherein quantum dots having a core shell structure are added to surfaces of the N type gallium nitride semiconductor layer and the nano wire. The gallium nitride light emitting diode having a nano wire structure to which quantum dots are added according to to the present invention has surface convexo-concaves due to the nano wire having grown on the N type semiconductor layer to significantly increase a surface of a border layer where light is generated, reinforces light as quantum dots having a core shell structure generates a fluorescence resonance energy transfer phenomenon, and remarkably improves efficiency of light by forming a muntilayered quantum wall structure.

Abstract translation: 本发明涉及一种氮化镓发光二极管，包括： 底物; 形成在所述基板的一个表面上的吸收层; 形成在吸收层的上部的N型氮化镓半导体层; 已经在N型氮化镓半导体层的表面上生长的纳米线; 涂覆在N型氮化镓半导体层上的纳米线壳层; 形成在涂覆有纳米线壳层的N型氮化镓半导体层上的P型氮化镓半导体层; 以及形成在P型氮化镓半导体层上的透明电极，其中具有核壳结构的量子点添加到N型氮化镓半导体层和纳米线的表面。 根据本发明，添加有量子点的具有纳米线结构的氮化镓发光二极管由于纳米线在N型半导体层上生长而显现出凸面凹凸，从而显着增加了界面层的表面 当产生光时，加强光，因为具有核壳结构的量子点产生荧光共振能量转移现象，并通过形成均匀的量子壁结构显着提高光的效率。