公开(公告)号：KR101378112B1

公开(公告)日：2014-03-26

申请号：KR1020130020316

申请日：2013-02-26

Applicant: 국민대학교산학협력단

Inventor： 배민경 ,  배학열 ,  김대환 ,  김동명

IPC: H01L21/66 ,  H01L29/786

CPC classification number: H01L22/12 ,  H01L29/78693

Abstract: Disclosed is a method for extracting state density in a band gap of an amorphous oxide semiconductor thin film transistor and a device for the same. The method for extracting state density in a band gap of an amorphous oxide semiconductor thin film transistor according to an embodiment of the present invention includes a step of measuring a drain current according to a gate voltage of the thin film transistor; a step of calculating an ideality factor according to the gate voltage by using the measured drain current; a step of differentiating the calculated ideality factor and obtaining a capacitance within a channel based on the differentiated ideality factor; and a step of extracting the state density within the band gap of the thin film transistor based on the obtained capacitance within the cannel. The step of calculating the ideality factor comprises: calculating the ideality factor based on the drain current which is less than or equal to a threshold voltage among the measured drain current so that the state density in the band gap can be extracted without a complex modification. The ideality factor is differentiated so that the accurate state density in the band gap, which is independent to the threshold voltage and is not influenced from heat, light, or temperature, can be extracted. [Reference numerals] (AA) START; (BB) END; (S310) Measuring drain current according to gate voltage; (S320) Calculating an ideal coefficient according to the gate voltage by using the measured drain current; (S330) Differentiating the calculated ideal coefficient; (S340) Obtaining capacitance in a channel based on the differentiated ideal coefficient; (S350) Extracting status density in a band gap based on the capacitance in the obtained channel

Abstract translation: 公开了一种用于提取非晶氧化物半导体薄膜晶体管的带隙中的状态密度的方法及其装置。 根据本发明实施例的用于提取非晶氧化物半导体薄膜晶体管的带隙中的状态密度的方法包括根据薄膜晶体管的栅极电压测量漏极电流的步骤; 通过使用测量的漏极电流来计算根据栅极电压的理想因子的步骤; 基于分解的理想因子，区分计算出的理想因子并获得信道内的电容的步骤; 以及基于所获得的所述容器内的电容提取所述薄膜晶体管的带隙内的状态密度的步骤。 计算理想因子的步骤包括：基于在测量的漏极电流中小于或等于阈值电压的漏极电流来计算理想因子，使得可以在不进行复杂修改的情况下提取带隙中的状态密度。 理想因素是有区别的，因此可以提取与阈值电压无关并且不受热，光或温度影响的带隙中的准确状态密度。 （附图标记）（AA）START; （BB）END; （S310）根据栅极电压测量漏极电流; （S320）使用测定的漏极电流，根据栅极电压计算理想系数; （S330）微分计算的理想系数; （S340）基于差分理想系数获得信道中的电容; （S350）基于获得的通道中的电容提取带隙中的状态密度

公开(公告)号：KR101267780B1

公开(公告)日：2013-06-07

申请号：KR1020110071009

申请日：2011-07-18

Applicant: 국민대학교산학협력단

Inventor： 배민경 ,  김용식 ,  김동명 ,  김대환

IPC: G06F19/00 ,  G06F9/455

Abstract: 비정질 산화물 반도체 박막 트랜지스터의 커패시턴스 모델링 방법 및 그 장치가 개시된다. 본 발명의 일 실시예에 따른 비정질 산화물 반도체 박막 트랜지스터의 커패시턴스 모델링 방법은 밴드갭 내 상태밀도(subgap DOS)에 속박되어 있는 전하밀도를 계산하는 단계; 게이트 전압의 기 설정된 범위에 따라 채널 내에 존재하는 전하밀도를 주요(dominant) 캐리어 성분으로 근사화하는 단계; 상기 근사화된 상기 전하밀도에 기초하여 단위면적당 총 전하를 계산하는 단계; 및 상기 밴드갭 내 상태밀도, 상기 계산된 상기 단위면적당 총 전하 및 기 입력된 복수의 파라미터들에 대한 정보에 기초하여 커패시턴스 모델을 생성하는 단계를 포함함으로써, 비정질 산화물 반도체 TFT 기반의 해석적인 커패시턴스 모델을 제공하고, 이를 통해 커패시턴스 계산 속도를 향상시켜 시뮬레이션 모델로 적용할 수 있다.

公开(公告)号：KR1020130010518A

公开(公告)日：2013-01-29

申请号：KR1020110071009

申请日：2011-07-18

Applicant: 국민대학교산학협력단

Inventor： 배민경 ,  김용식 ,  김동명 ,  김대환

IPC: G06F19/00 ,  G06F9/455

CPC classification number: G06F17/5045 ,  G06F17/5009

Abstract: PURPOSE: A capacitance modeling method of an amorphous oxide semiconductor TFT and an apparatus thereof are provided to improve the calculating speed of the capacitance by indicating a capacitance model as an analytical formula. CONSTITUTION: An input unit(1010) receives information about a parameter. An approximating unit(1030) approximates electric charge density as a main carrier component according to the setting range of a gate voltage. A calculation unit(1020) calculates total charge by unit surface based on the approximated charge density. A capacitance model generator(1040) generates a capacitance model based on parameter information. [Reference numerals] (1010) Input unit; (1020) Calculation unit; (1030) Approximating unit; (1040) Capacitance model generator

Abstract translation: 目的：提供一种非晶氧化物半导体TFT的电容建模方法及其装置，通过将电容模型表示为分析公式来提高电容的计算速度。 构成：输入单元（1010）接收关于参数的信息。 近似单元（1030）根据栅极电压的设定范围近似电荷密度作为主载流子成分。 计算单元（1020）基于近似的电荷密度计算单位面积的总电荷。 电容模型发生器（1040）基于参数信息生成电容模型。 （附图标记）（1010）输入单元; （1020）计算单位; （1030）近似单位; （1040）电容模型发生器

公开(公告)号：KR101105273B1

公开(公告)日：2012-01-17

申请号：KR1020110070958

申请日：2011-07-18

Applicant: 국민대학교산학협력단

Inventor： 배민경 ,  김용식 ,  김동명 ,  김대환

IPC: H01L21/66 ,  H01L29/786 ,  G02F1/136

CPC classification number: H01L22/14 ,  H01L22/12 ,  H01L29/7869

Abstract: PURPOSE: A current modeling method and apparatus of an amorphous oxide semiconductor thin film transistor are provided to improve a current calculation speed by supplying an analytical current model. CONSTITUTION: Charge density which is restricted in state density within a band gap is calculated(S310). The charge density is approximated to a major carrier component in case voltage between gate-sources is less than threshold voltage and is over than the threshold voltage(S320). Total electric charge per unit area is calculated(S330). The mobility of a channel which depends on gate voltage is calculated(S340). A first current model and a second current model are created(S350). A total current model is created using the first current model and the second current model(S360).

Abstract translation: 目的：提供非晶氧化物半导体薄膜晶体管的当前建模方法和装置，以通过提供分析电流模型来提高当前的计算速度。 构成：计算在带隙内的状态密度受限的电荷密度（S310）。 在栅极源之间的电压小于阈值电压并超过阈值电压时，电荷密度近似于主载流子分量（S320）。 计算每单位面积的总电荷（S330）。 计算取决于栅极电压的通道的迁移率（S340）。 创建第一个当前模型和第二个当前模型（S350）。 使用第一个当前模型和第二个当前模型创建总电流模型（S360）。